2021 10 21 LECTURE 4 Electrical ModelingGateDriver

Power Electronics – Control, Synthesis, Applications (CSA)
Electrical Modeling and Gate Drivers
25.10.2021
Dr.-Ing. Christoph H. van der Broeck
Institute for Power Electronics

and Electrical Drives 1
Outline and Objective
■ Electrical equivalent circuit modeling
Channel current in A
□ Conduction characteristics
□ Transient characteristics
■ Device (IGBT + Diode)
■ Package and driver
■ Switching transients of IGBTs

□ Double-pulse characterization
□ Turn-on and turn-off transient analysis ■ Objective
□ Manipulating the switching process
□ Map device and package characteristics to an
electrical equivalent circuit
■ Gate Drivers □ Understand the mechanisms that lead to switching
□ Key functions transients of Si IGBT
■ Amplification Example application: □ Learn about techniques to optimize switching
■ Isolation IGBT-based half-bridge □ Review the basic functions of gate drivers
■ Protection
2 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

Power Electronics (CSA) - Electrical Modeling and Gate Drivers
Electrical equivalent circuit modeling
Conduction characteristics
■ Four paralleled chips are approximated as

one effective device
■ Ohmic loss in substrate and bond wires
□ Skin and proximity effect force current to the
edges of the bond wires and substrate
■ Strong impact on effective resistance Rac
Current density distribution at 1 MHz excitation Current density distribution at 1MHz excitation

■ Conduction loss equation of the devices
■ Approximation of the forward voltage
■ Forward current → Conducted by IGBT

■ Reverse current → Conducted by Diode
■ Example: Operation with AC current

□ Instantaneous loss computation (every PWM cycle)
■ Forward current → Conducted by IGBT

■ Example: Operation with AC current ■ Average loss computation over excitation period
□ Instantaneous loss computation (every PWM cycle)
■ Average losses in IGBT and diode depend on …

□ … Modulation index M = V*/(Vdc/2)
■ Forward current → Conducted by IGBT □ …. Load angle f
■ Example: Operation with AC current ■ Average loss computation over excitation period
□ Instantaneous loss computation (each PWM cycle)
Note that MOSFETs have a resistive conduction

characteristics and can conduct current in reverse direction!
■ Average losses in IGBT and diode depend on …
In this case conduction losses of AC operation are different!
□ … Modulation index M = V*/(Vdc/2)
■ Forward current → Conducted by IGBT □ …. Load angle f
Transient characteristics
■ Equivalent circuit of the commutation cell

□ Circuit models of all components that have an
impact on the electrical behavior
■ Devices
− Diode/IGBT
■ Gate driver
− Switched supply
− Gate resistance
■ Parasitics
− Inductances
− Capacitances
Upper IGBT is not depicted for simplicity

Equivalent circuit of the commutation cell

■ Devices
□ Diode
■ Static conduction characteristics
■ Capacitance of the paralleled diode and IGBT
■ Reverse recovery charge/current
− Occurs due to recombination of charge carriers
− Irr , trr or Qrr are specified in data sheet


■ Devices
□ IGBT
■ Static IGBT characteristics
Conduction
characteristics
Turned-on
Turned-off
Saturation Region
→ Transfer characteristics


■ Devices
□ IGBT
■ Capacitances in device
− Data-sheets capacitances
• Input capacitance Cies
• Output capacitance Coes
• Reverse capacitance Cres
→ Large at low voltage
Cies = Cge + Cgc
Coes = Cgc + Cce
Cres = Cgc


■ Devices
□ IGBT
■ Internal gate resistance Rg,int(Tj)
− Located inside power device
− Result from gate oxide that is made of polysilicon


■ Devices
□ Parasitic inductances
■ Commutation/stray inductance DLs,package
■ Gate inductance Lg
■ Common gate-emitter inductance Leg
□ Result of module geometry and skin/proximity effect
10 kHz excitation 100 kHz excitation


■ Devices
□ Parasitic inductances
■ Commutation/stray inductance Ls = S DLs, I~ 30-60 nH
− Three major contributors
• Power module ~ 10-20 nH
• DC-link construction ~ 10 nH
• Capacitor ~ 15 nH
Capacitor characteristics
Approximate capacitance as voltage source


■ Devices
□ Parasitic capacitances
■ Result from geometry
■ Act in parallel to device capacitances
− But are small in comparison to IGBT/diode capacitances
■ Capacitance to heat sink
− Result in common mode current
• More in EMI seminar
Jumping voltage node


■ Devices
□ Gate driver voltage
■ Applies 15 V or -10 V to charge/discharge gate
□ External gate resistance Rg
■ Determines the how fast the uge is changed
Gate resistance
Gate voltage IC
→ provides voltage
More information on gate drivers in next section



□ Turn-on and turn-off transient analysis
■ Objective
■ Amplification
□ Learn about techniques to optimize switching
■ Isolation
□ Review the basic functions of gate drivers
■ Protection

Switching transients of IGBTs
Double-pulse characterization
■ Characterizing the switching behavior of a device

□ Operation of the double-pulse test bench
■ Establish desired load current


■ Disconnect LV voltage source


■ Turn-off device
− Current commutates to anti-parallel diode


■ Turn-off device
■ Turn-on of auxiliary device
− Prevent current from decaying


■ Turn-off device
■ Turn-off auxiliary device
− Current flows in CHV


■ Turn-off device
■ Turn-off auxiliary device
■ Turn-on device
− Current commutates
to device

■ Characterizing the switching behavior of a device ■ Measurement equipment

□ Measured and extracted variables □ Differential voltage probes
■ Device currents and voltages □ Shunts and Rogowski probes
■ Gate current and voltage □ Oscilloscope © Teledyne LeCroy 2019
■ Voltage slopes
■ Losses and loss energies © PMK 2019

■ Measurement
Commutation inductance
□ For realistic measurements the commutation cell
must not be changed compared to the converter
□ Device current measurement is challenging
■ Shunt
− Adds to commutation inductance Ls
■ Rogowski coil
− Only extracts di/dt
− Correct dc-current must be reconstructed
□ Measurement equipment exhibits delays for

transients in the MHz range
Turn-on and turn-off transient
■ Turn-on process – Initial state A (before turn-on) ■ Assumptions

□ IGBT is turned off □ Inductances Ls ,Leg and Lg are small enough, such that
□ Load current is flowing through diode they only have a minor impact on switching of IGBT
■ Valid for most (slowly) switched IGBT packages
150
100
50

■ Turn-on process - State B □ Gate behavior is primarily RC circuit

□ Gate drive applies ud = +15 V at gate terminals
□ Gate voltage uge charges up to threshold voltage Uth
■ Gate inductance Lg and igc are legible at this point
150
100
50

■ Turn-on process - State C Transfer

characteristics
□ Gate behavior is primarily RC circuit
□ Gate voltage uge exceeds Uth
□ IGBT current ice rises as function of uge
■ IGBT transfer characteristic ■ Current rise can be accelerated by smaller Rg
□ Reverse recovery current due to carrier recombination
150
100
50 C
Reverse recovery current

■ Turn-on process - State D □ Plateau of constant gate voltage

□ Diode blocks and capacitance Cd takes ■ Plateau is required conduct load current in linear operation
Transfer
over voltage from IGBT characteristics
■ Miller capacitance Cgc must discharge
■ Entire gate current discharges Cgc
150
100
D
50 C
Gate plateau

■ Turn-on process - State D □ Plateau of constant gate voltage

□ Diode blocks and capacitance Cd takes ■ Plateau is required conduct load current in linear operation
Transfer
over voltage from IGBT ■ Voltage commutation duce/dt is limited by gate resistance
characteristics
− Smaller gate resistance speeds up voltage commutation
■ Miller capacitance Cgc must discharge
■ Entire gate current discharges Cgc
150
100
D
50 C
Gate plateau

■ Turn-on process - State E □ Gate behavior is primarily RC circuit

□ Gate voltage uge is charged up to +15 V
□ IGBT is driven into saturation
■ Turn-on process completed
150
100
E D
50 C

■ Turn-on process - State E ■ Switching loss energies

□ Gate voltage uge is charged up to +15 V □ Device voltage and current overlap
□ IGBT is driven into saturation
■ Turn-on process completed
150
100
E D
50 C

■ Turn-off process - Initial State A (before turn-off)

□ IGBT conducts load current
□ Diode block dc-link voltage
150
100
50

■ Turn-off process - State B □ Gate behavior is primarily RC circuit

□ Gate drive applies ud = -10 V at gate terminals
□ Gate voltage uge discharges down to threshold voltage Uth
150
100
B
50

■ Turn-off process - State C

□ Gate voltage reaches level
required to conduct load current
□ Device current ids splits in three parts
■ Current in channel ich ich >> igc +iCout
■ Charging current of miller capacitance igc
■ Charging current of output capacitance iCout
150
100
B C
50
iCout
Gate plateau

■ Turn-off process - State C ■ Voltage commutation from diode to IGBT

□ Gate voltage reaches level □ Voltage commutation du/dt is limited by Cgc
required to conduct load current although Cgc << Cce
□ Device current ids splits in three parts □ Charging of Cgc can only be achieved with ig
■ Current in channel ich
■ Charging current of miller capacitance igc ich >> igc +iCout
■ Charging current of output capacitance iCout
150
100
B C
50
iCout
Gate plateau

■ Turn-off process - State D □ Effects

□ After voltage is entirely commutated from diode to IGBT ■ dice/dt is connected to an overvoltage at Ls
■ Gate voltage is further reduced (RC characteristics) ■ Tail current occurs due to carrier recombinations
■ Device current reduces following the IGBT transfer

characteristics
150
100
B C
50 D
Overvoltage Tail current

■ Turn-off process - State E ■ Switching loss energies

□ Gate voltage uge is discharged to -10 V □ Device voltage and current overlap
□ Load current is entirely conducted by diode
150
100
B C
50 D

■ IGBT switching operation at different load currents ■ Loss energy and losses
□ Turn-on and turn-off loss are proportional to load current
IGBT turn-on and -off loss energy
Datasheet of the Hybridpack2 ©Infineon 2014

Overvoltage due to Ls

■ Diode switching operation at different load currents ■ Loss energy and losses
□ Very small diode turn-on losses
□ Diode turn-off losses due to reverse recovery effect
■ Much smaller than IGBT switching losses
■ Nearly linear with current Diode turn-off loss energy
Diode turn-off transition
Reverse recovery effect occurs while

voltage is commutating to diode
Datasheet of the Hybridpack2 ©Infineon 2014

■ Cross-talk (at S1 due to turn-on of S2)

□ Cce of S1 is charged during voltage commutation
S1
□ Cge and Cgc are charged at the same time
■ Gate current flows due to du/dt █
■ Gate voltage is induced due to Rg and Lg
■ Parasitic turn-on can occur if voltage is to large
□ Keep gate inductance Lg low
S2
© 2019 Infineon, APEC Presentation David Levett et al.

Manipulating the switching process
■ Gate resistance
□ Key design variable to control
switching transition
■ Design objectives
□ Current slope
■ Smaller Rg
increases di/dt
□ Voltage slope
■ Smaller Rg
increases du/dt

■ Gate resistance
□ Key design variable to control
switching transition
■ Design objectives
□ Current slope
■ Smaller Rg
increases di/dt
□ Voltage slope
■ Smaller Rg
increases du/dt

■ IGBT switching losses ■ What limits the switching speed

□ Reduce with smaller gate resistance Rg □ Overvoltage caused by Ls and dice/dt
■ Maximum speed at zero external gate resistance □ Current overshoot due to reverse recovery effect
− Only internal gate resistance Rg,i is left ■ Increases with dice/dt
□ Voltage slope duce/dt → Excitation of EMI
□ Gate oscillation → due to Lg
~1kV/ms ~3kV/ms

■ Power module design ■ Advanced gate voltage control

□ Reduce commutation and gate inductance Ls and Lg □ Different turn-on and turn-off resistance
□ Minimize AC-node capacitance □ Gate driver with variable gate resistance
□ Step-wise gate-drivers
→ Improve power-module layout → More information in next section



□ Turn-on and turn-off transient analysis
■ Objective
■ Amplification
□ Learn about techniques to optimize switching
■ Isolation
□ Review the basic functions of gate drivers
■ Protection

What are gate drivers?
Basic Functions
■ Drivers enable switching of power devices

□ Turn-on Charge gate capacitance to 15 V (IGBTs)
□ Turn-off: Discharge gate capacitance to -10 V (IGBTs)
■ Transition is commanded by microcontroller signal

□ Microcontroller does not provide power at output
■ Key functions
□ Amplification Gate-Signal
□ Isolation
□ Device protection
□ Smart control and sensing 𝑢GS

Amplification
What are we driving?
■ The most used power semiconductor switches show capacitive characteristics at their gate
□ IGBTs (Insulated Gate Bipolar Transistor)
□ MOSFETs (Metal Oxide Semiconductor Field Effect Transistor)
MOSFET IGBT
𝐶GD 𝐶GC
𝐶DS 𝐶CE
𝐶GS 𝐶GE
■ 𝐶ISS = 𝐶GS + 𝐶GD ■ 𝐶IES = 𝐶GE + 𝐶G𝐶

■ 𝐶OSS = 𝐶G𝐷 + 𝐶DS ■ 𝐶OES = 𝐶G𝐶 + 𝐶CE
■ 𝐶RSS = 𝐶GD ■ 𝐶RES = 𝐶G𝐶
■ Most datasheets additionally give the gate charge 𝑄G

Amplification
Push-pull stage amplifier
Supply Amplification Gate resistance Device

■ Signal pins can‘t drive capacitive loads
□ Push-Pull stage amplifies logic signal Signal
uref ranging typically from 0 - 3.3 / 5 V Ud+ Rg,ext,off
□ Supply voltages are generated by
■ DC-DC converter
uref Rg,ext,on u
■ Boot-strap technology ce
Ud-
■ Maximum gate-current is limited by …

□ … internal impedance Signals and supply
□ … peak current capability Must be galvanically isolated
of push-pull stage
■ Rise of gate voltage uce is adjusted by Rg,ext

□ Independent turn-on and turn-off resistor
■ Activated based on diodes

Amplification
Designing the Gate Loop
■ Gate loop inductance Lgs

□ Parasitic elements caused by the PCB layout
■ Effect of larger gate inductance

□ Leads to gate voltage overshoot
□ Leads to severe cross-talk
Lgs
■ Gate drive design
□ Minimize area between traces
to optimize 𝐿𝜎1 and 𝐿𝜎2
□ Ensure sufficient damping D

Isolation
General components
■ Signal path isolation

□ Components
■ Isolation transformers
■ Opto-couplers
■ Capacitive couplers
□ Important features
■ Low propagation delay/distortion
■ Supply isolation
□ Components
■ DC-DC converter with transformer
■ Boot-strap technology
− Temporary isolation via diode
□ Important features
■ High reliability
■ Low costs
© Mouser 2019 https://www.mouser.ch

Isolation
Gate voltage supply - Architectures
■ Multiport Flyback converter ■ Supply with HF-AC Bus

□ Very few components and low cost □ Arbitrary number of output ports
□ Multiple output voltage ports attached to one □ Very high voltage and du/dt capability
Flyback transformer □ Independent voltage regulation of output ports
□ Voltage regulation between output ports □ Excellent for high-voltage/power applications
© A. Shea 2014 © J. Gottschlich 2016

Isolation
■ Bootstrap driver technology

□ No separate supply of high-voltage
and low-voltage gate
■ DC-DC converter is omitted
□ Supply capacitance for HV IGBT S1
when S2 is turned-on
■ Advantage
□ Very simple and cheap
□ Feasible in wide power range
■ Disadvantage
□ No galvanic isolation
□ Only operation with continuous
switching possible, as CBS must be
charged periodically
■ Switching interruption is feasible
with charge pump IC
Isolation
■ Circuit layout is crucial

□ Bootstrap circuitry are the most
severe sources of interference
□ This layout would induce large
circulating current and field emissions
■ Path creates coil/antenna around IC
− H-field can induce currents in IC
− Unpredictable behavior, malfunction
and failures can occur
Magnetic field

Isolation
Slow recharge of C1
■ Modified Layout eliminates

strong EMI emissions
□ Circuit is not changed
□ Additional supply capacitor C1 is
added close to CBS
■ CBS is charged via added C1
− Recharge path circulates small
area without critical components
■ Inductor LBS limits supply current
Fast recharge of CBS

Isolation
Gate voltage supply - Power Demand
Power Demand
■ Charging and discharging the gate will create losses in 400
the internal and external resistances
350
■ The losses can be approximated by:
300
□ 𝑃GD Output = 𝑓sw × 𝑄G × ∆𝑈d = 𝑓sw × 𝑄G × (Ud+ + Ud-)
250
Power in mW
□ Where:
■ 𝑃GD Output = Gate driver output Power 200
■ 𝑓sw = Switching frequency 150

■ 𝑄G = Total gate charge
100
■ ∆𝑈d = Delta between on- and off-supply voltage
50
■ Example devices:
□ Infineon IGBT IKW15N120BH6: 𝑄G = 92 nC, ∆𝑈GE = 15 V 0
20 40 60 100
□ STMicro IGBT STGW15M120FD3: 𝑄G = 226 nC, ∆𝑈GE = 15 V Switching Frequency in kHz
□ Cree SiC MOSFET C3M0075120K: 𝑄G = 51 nC, ∆𝑈GE = 23 V Infineon IGBT STM IGBT
Cree SiC MOSFET

Isolation
Coupling to Ground
Transformer-based Galvanically isolated
digital isolator DC-DC converter
■ Large d𝑢/d𝑡 of the AC node due to switching
□ Shifting potential also occurs over gate driver © rs-online 2019
isolation capacitance
□ Currents are induced through the coupling
capacitances of the supply isolation
𝐶CM
■ Typical coupling capacity of gate supplies:
□ IGBTs: ~45 pF 𝐶OSS,HS
□ SiC MOSFETs: < 15 pF
■ Examples for imposed currents:
d𝑈 𝐶CM 𝐶OSS,LS
■ 𝐼max = 𝐶coupling × d𝑡
5 kV
− 𝐼max, 𝐼𝐺𝐵𝑇 = 45 pF × = 225 mA
μs Signal Layer Signal Layer
80 kV Supply V+ Supply V+
− 𝐼max, SiC = 15 pF × = 1200 mA Signal Layer Supply V-
μs
GND GND
■ Ensure layout leaves sufficient gap Forbidden zone

Protection
Under voltage and shoot-through protection
■ Under voltage lock out (UVLO) 𝑉Supply
□ Working principle
■ Safe deactivation of power device via gate circuit UVLO-Limit
□ Feature
■ Reliable operation during power up and down sequences Gate-Signal
■ Protection against switching with low gate voltage
𝑉GS
− Increased device losses
− Can cause failure due to operation in the linear region
■ Dead-time insertion CPLD contains programmable
logic for dead-time insertion
□ Working principle
■ Logic ensures minimal blanking-time (typ. 2-3ms for IGBTs)
□ Feature
■ Prevents shoot through caused by
− False commands
− Corrupted signals or EMI

Protection
Short Circuit Types and Behavior
■ Short circuit types ■ Short Circuit Behavior Cgc

□ Shoot through - Type1) □ Fast rise of the current
■ At turn-on of device □ ug rises due to Legdice/dt or positive
□ Phase to phase - Type2) duce/dt and miller capacitance ug Cge
■ At turn-on of device □ Operation at 3-8 times IR Leg
■ During device conduction ■ Thermal characteristic limits short
circuit capability of device ~5-10 ms
■ Uce can be used to detect short-circuit
uge Turn-on short circuit
uce
1
ice
2

Protection
Over-current and short circuit handling
■ “Gate clamping” - Working principle Cgc

□ Gate voltage is limited to gate driver supply
voltage
■ Implementation ug Cge
□ Transient Voltage Suppressor (TVS) Diode Leg
□ Diode connects gate driver output to gate
supply
■ Features
Limit realized via
□ Limits maximal di/dt during transients © Mouser 2019 https://www.mouser.ch gate clamping
□ Limits maximal gate voltage and thus the

short circuit current
□ Provides “more” time for short-circuit to be
Isc/Ir
turned-off
Maximum short circuit time in ms


Protection
Short-circuit detection
■ “Desaturation monitoring” - Working principle

□ Diode D blocks voltage at turn-off and realizes conduction path at turn-on
□ Capacitance Csense is rested at turn-on an is shared until saturation is reached
□ If short-circuit occurs and saturation is not reached, diode does not block and Usense exceeds limit
■ Implementation
□ Gate driver IC
■ Current source D
■ Comparator
□ Diode Csense
□ Sense Capacitance
■ Features
□ Detects short circuits
Desat sense pin at
of Type 1 and 2 short circuit turn-on
□ Driver can turn-off short-

circuits within few ms

Protection
Overvoltage Protection
■ “Active-clamping” - Working principle Short circuit current turn-off with (left) and without (right) “Active Clamping”
□ Fast turn-off of large currents/short circuit currents
leads to overvoltage that can destroy the device
■ Overvoltage caused by commutation inductance Ls
□ TVS Diodes break down if dc-link voltage + margin is
exceeded and charge gate
□ Current slope dice/dt and thus overvoltage is reduced
■ Implementation
□ Feedback path with TVS diode and Implemented by multiple diode to
reverse diode that blocks at turn on withstand voltage
■ Features
□ Prevents overvoltage at device
□ Controls “safe” turn-off” of
short circuit currents

Protection
Parasitic turn-on protection
15 V
■ Negative gate voltage - Working principle 15 V
Cgc
□ Negative gate voltage ensures sufficient margin
to threshold voltage 0V
→ Cross-talk voltage does not reach uth Cge

■ Miller clamp - Working principle -10 V 0V Leg
□ External transistor short circuits gate at turn-off Miller clamp
Negative voltage rail
→ Cross-talk voltage is reduced and uth not reached
■ Implementation
□ Negative gate voltage
■ Bipolar gate supply, e.g. +15 V/-10 V
□ Miller clamp
■ Logic& external transistor or MOSFET
■ Feature
□ Power device is remains “safely” turned-off if other device switches

Smart control and sensing
Advanced gate-driver features
■ Integrate sensing features in gate driver ■ Stepwise/Gateshaping

□ Electrical parameters □ Goal: Optimize voltage/current transition to
minimize overshoot and oscillations
□ Optical parameters
… that are temperature or degradation sensitive
Initial peak Ringing and level of Transient and level Time delay of
■ Approaches:
of ig of ig of uge of uge
□ Apply a sequence of switchable gate resistors
to change the gate current during the transitions
□ Use a variable high bandwidth current source to
apply the desired waveform
Temperature
𝑈Supply +
𝑈G
𝑈Supply −
[1]

Summary
Electrical model includes all Switching transients and Gate drivers act as amplifier to
key component of the module losses can be manipulated by turn-on/off device and provide
❑ Devices (IGBTs and diodes) ❑ Gate resistance (du/dt + di/dt) ❑ Isolation of signals and supply
❑ Package parasitics + driver ❑ Module and converter design ❑ Device protection

Power Electronics – Control, Synthesis, Applications (CSA)
Electrical Modeling and Gate Drivers
25.10.2021
Dr.-Ing. Christoph H. van der Broeck
Institute for Power Electronics

and Electrical Drives 66

2021 10 21 LECTURE 4 Electrical ModelingGateDriver

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2021 10 21 LECTURE 4 Electrical ModelingGateDriver

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Power Electronics – Control, Synthesis, Applications (CSA)

Electrical Modeling and Gate Drivers

Institute for Power Electronics

■ Electrical equivalent circuit modeling

■ Switching transients of IGBTs

2 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

■ Four paralleled chips are approximated as

3 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

■ Conduction loss equation of the devices

■ Approximation of the forward voltage

■ Forward current → Conducted by IGBT

■ Example: Operation with AC current

■ Forward current → Conducted by IGBT

■ Average losses in IGBT and diode depend on …

Note that MOSFETs have a resistive conduction

■ Equivalent circuit of the commutation cell

Upper IGBT is not depicted for simplicity

8 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

Equivalent circuit of the commutation cell

9 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

Equivalent circuit of the commutation cell

10 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

Equivalent circuit of the commutation cell

Cies = Cge + Cgc

Coes = Cgc + Cce

11 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

Equivalent circuit of the commutation cell

12 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

Equivalent circuit of the commutation cell

10 kHz excitation 100 kHz excitation

13 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

Equivalent circuit of the commutation cell

Approximate capacitance as voltage source

14 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

Equivalent circuit of the commutation cell

Jumping voltage node

15 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

Equivalent circuit of the commutation cell

16 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

■ Electrical equivalent circuit modeling

■ Switching transients of IGBTs

17 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

■ Characterizing the switching behavior of a device

18 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

■ Characterizing the switching behavior of a device

19 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

■ Characterizing the switching behavior of a device

20 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

■ Characterizing the switching behavior of a device

21 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

■ Characterizing the switching behavior of a device

22 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

■ Characterizing the switching behavior of a device

23 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

■ Characterizing the switching behavior of a device ■ Measurement equipment

24 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

□ Measurement equipment exhibits delays for

■ Turn-on process – Initial state A (before turn-on) ■ Assumptions

26 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

■ Turn-on process - State B □ Gate behavior is primarily RC circuit

27 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck

■ Turn-on process - State C Transfer

Reverse recovery current

28 25.10.2021 | Dr.-Ing. Christoph H. van der Broeck