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ChemPlusChem 10.1002/cplu.201600351
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Crystal phase
Figure 2. Typical TEM images of LTO (A) and CdS QDs/LTO (2:1) (B~F).
UV-vis absorption
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Figure 3. DRS spectra of CdS QDs, LTO and CdS QDs/LTO nanocomposites.
XPS spectra
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Due to the Fermi energy level of Pt is always lower than that (2)
of semiconductors, Schottky junction would be formed when Pt
intimately contacts with CdS QDs/LTO[32, 33]. The electric field Where χ is the absolute electronegativity of the
formed in the Schottky junction helps photogenerated electrons semiconductor, expressed as the eometric mean of the absolute
migrate to the surface of CdS QDs/LTO and are entrapped by electronegativity of the constituent atoms (χCd=3.66, χS=6.39,
the Pt[34,35]. Accordingly, the Pt loading of the CdS QDs/LTO was χLa=3.72, χTi=4.92, χO=7.67)[37]; EVB is VB potential; ECB is CB
investigated. The interface of the deposition of Pt nanoparticles potential; Eg is the band gap energy of the semiconductor; Ee is
on the surface of CdS QDs/LTO nanosheets was investigated, the energy of free electrons on the hydrogen scale (~4.5 eV).
as shown in Figure S2. The interplanar distances of 0.220, 0.278 The predicted band edge positions of CdS QDs and LTO are
and 0.285 nm are in good agreement with the d-spacing of the shown in Table 2.
(111), (002) and (200) planes of Pt, LTO and CdS, respectively.
This result confirms the formation of Pt nanoparticles on the
Table 2 The values of the calculated χ, Eg, ECB, and EVB for CdS QDs and
surface of CdS and LTO nanosheets surfaces.
LTO.
The H2 production rates of different Pt loading amounts on
the surface of LTO nanosheets were studied in Figure S3. The Semiconductor χ (eV) Eg (eV) ECB (eV) EVB (eV)
photocatalytic H2 production rate of pure LTO is extremely low,
however, the loading of Pt results in a substantial improvement CdS QDs 4.84 2.28 -0.80 1.48
of the H2 evolution rate. With the increasing of Pt loading up to 1 LTO 6.20 3.94 -0.27 3.67
wt%, the rate of H2 evolution increases to 10.26 μmol g-1 h-1.
Further increasing of Pt loading up to 2 wt% drastically
decreases the photocatalytic activity. High Pt loading amount Generally, CdS QDs and LTO have different Fermi level
could result in covering the surface active sites of LTO and positions. When CdS QDs contacts with LTO forming
hindering its contact with sacrificial reagent. Besides, excessive heterojunctions in dark condition, electrons photogenerated from
loading of Pt on the surface of LTO that could shield the incident CdS QDs will flow into LTO and form accumulation layers,
light, and thus prevent the light absorption and generation of meanwhile, holes produced in LTO flow into CdS QDs and form
photogenerated electrons and holes inside the semiconductor. depletion layers. Therefore, the potential barrier and the built-in
Furthermore, the H2 production rates of Pt loaded on different potential are established. Under the influence of built-in potential,
samples were investigated, as summarized in Table 1 and charges are redistributing for equilibrium, which will make the
shown in Figure 5(B). The Pt (1 wt%)-CdS QDs/LTO (2:1) semiconductors, CH3OH and H2O have a same Fermi level. No
nanocomposite exhibits the maximum photoactivity (51.31 μmol oxidation or reduction reaction is happened. However, the
h-1 g-1 with an apparent quantum efficiency (AQE) of 0.31%), thermodynamic equilibrium is broken and quasi-Fermi levels are
which is 6.43 times higher than that of pure LTO. built for CdS QDs/LTO heterojunctions when they are
illuminated under solar illumination. Specifically, under solar
Table 1 Photocatalytic H2 evolution rates of CdS QDs, LTO and CdS
irradiation only the photogenerated electrons in CdS QDs which
QDs/LTO nanocomposites with and without 1 wt% Pt.
have enough energy to stride over the potential barrier can
transport to LTO. The same principle can be applied to the
CdS QDs LTO 1:1 2:1 3:1 4:1 transfer of photogenerated holes from LTO to CdS QDs.
Without Pt 0.12 0.31 0.99 3.30 0.20 0.192
Whereas, a small of potential difference exists between CdS
QDs VB potential and LTO CB potential resulting in the
With 1 wt% Pt 0.29 10.26 4.46 51.3 16.1 8.29
photogenerated electrons in the accumulation layers of the LTO
and the holes in the depletion layers of the CdS QDs are easily
recombined with each other. After that, the accumulated holes in
Mechanism of enhanced photoactivity LTO and the accumulated electrons in CdS QDs can form a
photovoltage, opposite to the built-in potential, resulting in the
Based on the above experimental results and analyses, we
anodic and cathodic shifts of the quasi-Fermi level of the LTO
inferred that the formation of heterojunction between CdS QDs
and CdS QDs (Figure 6)[38, 39]. For Pt loading system, the
and LTO led to the improvement of performance. Firstly, the
accumulated electrons in CdS QDs and residual in LTO are
band structures of CdS QDs and LTO are studied for further
transferred to Pt cocatalyst to generate H2 owing to the Schottky
verifying the effect of CdS QDs/LTO heterojunction on
junction between semiconductors and Pt. Accordingly, both type
photocatalytic H2 production. The band positions of CdS QDs
II heterojunction and Schottky junction are key junctions in the
and LTO can be predicted according to the empirical formulas
photocatalytic enhancement. Type II heterojunction in CdS
(1) and (2)[36]:
QDs/LTO is favored to photoinduced interfacial charge transfer
(1) upon excitation and promoting the separation efficiency of
photogenerated electrons and holes, while Schottky junction in
ChemPlusChem 10.1002/cplu.201600351
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Pt loading-semiconductor helps trap photogenerated electrons of photocurrent values indicating that CdS QDs, LTO, and CdS
for H2O reduction. On the other hand, the accumulated holes in QDs/LTO heterojunction are stable and photoresponses are
LTO are oxidized by sacrificial reagents. quite reversible (Figure 8A). EIS Nyquist analysis is used to
study the effect of photoinduced interfacial electrons transfer
(Figure 8B and Figure S4). The arc of CdS QDs/LTO is smaller
than those of CdS QDs and LTO in the high-frequency region,
implying that CdS QDs/LTO has faster interfacial electron
transfer and more effective separation of photogenerated
electron-hole pairs[40-43]. Photoluminescence (PL) spectra are
performed for further verifying the effect of separation of
photogenerated electron-hole pairs (Figure 9). It can be seen
that CdS QDs/LTO displays dramatically diminished of PL
intensity as compared with CdS QDs, suggesting that
recombination of photogenerated electron-hole pairs of
heterojunction is efficiently suppressed. These results are in well
Figure 6. Proposed mechanism of the separation of photoelectrons and holes accordance with photo-electrochemical performances and
in Pt loading CdS QDs/LTO nanocomposite. photocatalytic H2 production activities.
Figure 7. Schematic illustration of the potential and band positions in the CdS
QDs/LTO heterojunction.
Photo−electrochemical activity
Figure 8. Transient photocurrent responses (A) and Nyquist plots of EIS (B)
Transient photocurrent responses (J−t) and electrochemical for CdS QDs, LTO and CdS QDs/LTO (2:1) under simulated solar irradiation.
impedance spectra (EIS) are performed to investigate the
separation of photogenerated carriers (Figure 8). Photocurrent is
formed mainly by transferring photogenerated electrons to the
photogenerated electrons on it. Besides, no obvious attenuation
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Experimental Section
Materials
Figure 9. PL spectra of CdS QDs, LTO and CdS QDs/LTO (2:1). one CBD cycle, as shown in Scheme 1. A series of CdS QDs/LTO
nanocomposites with different molar ratios (1:1, 2:1, 3:1, and 4:1) were
synthesized in a similar route by adjusting CBD cycles. A pure CdS QDs
Conclusions were also synthesized following the same procedure in the absence of
LTO.
To improve the STH efficiency of LTO, CdS quantum dots Characterization
were using as photosensitizer and modulator of photogenerated
electrons and holes to enhance the utilization efficiency of solar X-ray diffraction (XRD) patterns were recorded using an X-ray
and reduce the recombination rate of carriers. Firstly, chemical diffractometer (XRD, X’Pert pro. PANalytical B.V) with Cu Ka irradiation.
bath deposition method was used to decorate CdS QDs on 2D Transmission electron microscopy (TEM) observations were collected on
LTO nanosheets for investigating the synergistic effects of CdS a JEOL JEM-2100 TEM. UV-Vis diffuse reflectance spectra (DRS) were
QDs and LTO on the photocatalytic H2 production activity. Due obtained on a Perkin-Elmer Lambda 35 UV-Vis spectrophotometer. X-ray
to the appropriate band alignment between CdS and LTO that photoelectron spectroscopy (XPS) was performed on a KRATOS
allows photoinduced interfacial charge transfer upon excitation AXIS165 X-ray photoelectron spectrometer. The binding energies were
and promotes the separation efficiency of photogenerated referenced to the C1s line at 285.0 from adventitious carbon.
electrons and holes, CdS QDs/LTO heterojunction exhibits Photoluminescence (PL) spectra were measured on the Jobin–Yvon
obvious improvement on photocatalytic H2 production and
LabRAM HR800-Horiba spectrometer with an excitation wavelength of
photoelectrochemical property. Besides, the quantum effect of
325 nm.
CdS QDs in CdS QDs/LTO heterojunction enhances transferred
Photocatalytic activity
driven force of interfacial electrons and improves two
components separation activity of photogenerated. This current The photocatalytic reaction was carried out in a quartz flask under a
investigation provides new opportunities for the development of 500 W Xe lamp (100 mW cm-2, CHF-XM 500, Beijing Trusttech Co., Ltd.)
a facile synthesis yet efficient heterojuction on the photoinduced irradiation at room temperature. 150 mL aqueous solution containing
hydrogen evolution system. 25 %(v/v) methanol and 0.1 g photocatalyst powders were added in a
quartz flask. 1.0 wt % Pt cocatalyst was deposition on a LTO surface by
in-situ photoreduction of H2PtCl6, as reported in our previous works[21].
Before the photocatalytic experiments, the reaction vessel was deaerated
by bubbling nitrogen into the solution for 15 min and ensure anaerobic
conditions. Throughout the experiment, 1 mL gas was sampled
intermittently and hydrogen content was analyzed using a gas
chromatography (DongXi GC-A5000, with high purity Ar carrier gas)
Scheme 1. Illustration for the preparation of the CdS QDs /LTO equipped with a thermal conductivity detector. The H2 production rates
nanocomposites. are calculated by the mole of H2 gas per amount of photocatalyst and
time. The AQE is calculated according to the following equation:
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Entry for the Table of Contents
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A heterojunction of perovskite-type Sujuan Hu, Mingshan Zhu*
LTO and CdS QDs was designed
to enhance solar light driven H2 Page No. – Page No.
generation owing to the efficient
interfacial charge transfer. Enhanced solar hydrogen
generation by a heterojunction of
perovskite-type La2Ti2O7 nanosheets
doped with CdS quantum dots