Ordering number:ENN3578

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1770/2SC4614

High-Voltage Switching Applications

Features Package Dimensions

· Adoption of MBIT process. unit:mm
· High breakdown voltage and large current capacity. 2064A
[2SA1770/2SC4614]
2.5
1.45
6.9 1.0

1.0
4.5
1.0
0.6

4.0
1.0
0.9 0.5
1 2 3 0.45

1 : Emitter
( ) : 2SA1770 2 : Collector
3 : Base
2.54 2.54
Specifications SANYO : NMP

Absolute Maximum Ratings at Ta = 25˚C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (–)180 V
Collector-to-Emitter Voltage VCEO (–)160 V
Emitter-to-Base Voltage VEBO (–)6 V
Collector Current IC (–)1.5 A
Colletor Current (Pulse) ICP (–)2.5 A
Collector Dissipation PC 1 W
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

Electrical Characteristics at Ta = 25˚C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=(–)120V, IE=0 (–)1 µA
Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 (–)1 µA
hFE1 VCE=(–)5V, IC=(–)100mA 100* 400*
DC Current Gain
hFE2 VCE=(–)5V, IC=(–)10mA 80
Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)50mA 120 MHz
* ; The 2SA1770/2SC4614 are classified by 100mA hFE as follows : Continued on next page.
Rank R S T
hFE 100 to 200 140 to 280 200 to 400

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90503TN (KT)/83198HA (KT)/6040TA (CQ) No.3578–1/4
 2SA1770/2SC4614
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Output Capacitance Cob VCB=(–)10V, f=1MHz (22)14 pF
(–200) (–500) mV
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)500mA, IB=(–)50mA
130 450 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)500mA, IB=(–)50mA (–)0.85 (–)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(–)10µA, IE=0 (–)180 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(–)1mA, RBE=∞ (–)160 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(–)10µA, IC=0 (–)6 V
Turn-ON Time ton See specified Test Circuit (40)40 ns
(0.7) µs
Storage Time tstg See specified Test Circuit
1.2 µs
Fall Time tf See specified Test Circuit (40)80 ns

Switching Time Test Circuit

IB1
PW=20µs
D.C.≤1% RB
OUTPUT
INPUT
VR
IB2 RL
50Ω
+ +
100µF 470µF

--5V 100V
IC=10IB1= --10IB2= 0.7A
For PNP, the polarity is reversed.

IC -- VCE IC -- VCE
--1.8 1.8
2SA1770 2SC4614
--1.6 1.6

--1.4 --80mA 1.4 50mA

Collector Current, IC – A

Collector Current, IC – A

A 40mA
--60m
--1.2
--40 m A 1.2 30mA
A 20mA
--1.0
--20m 1.0

--0.8 --10mA 0.8 10mA

--5mA 5mA
--0.6 0.6
2mA
--0.4 --2mA 0.4

--1mA 1mA
--0.2 0.2
IB=0 IB=0
0 0
0 --1 --2 --3 --4 --5 0 1 2 3 4 5
Collector-to-Emitter Voltage, VCE –V ITR04571 Collector-to-Emitter Voltage, VCE –V ITR04572
IC -- VCE IC -- VCE
--1.0 1.0
2SA1770 4.5mA 2SC4614
A
0m

A
4.0m
5.

A
--0.8 --5.0m 0.8 3.5m
A
A
-- m
4 .5
Collector Current, IC – A

Collector Current, IC – A

--4.0m
A 3.0mA
--3.5mA 2.5mA
--0.6
--3.0mA 0.6

--2.5mA 2.0mA
--0.4
--2.0mA 0.4 1.5mA
--1.5mA
--1.0mA 1.0mA
--0.2 0.2
--0.5mA 0.5mA
IB=0 IB=0
0 0
0 --10 --20 --30 --40 --50 0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE – V ITR04573 Collector-to-Emitter Voltage, VCE – V ITR04574

No.3578–2/4
 2SA1770/2SC4614
IC -- VBE IC -- VBE
--1.6 1.6
2SA1770 2SC4614
VCE=--5V VCE=5V
Collector Current, IC – A

Collector Current, IC – A
--1.2 1.2

--0.8 0.8

7 5 °C
75°C
25°C

25°C
--25°C

--25°C
Ta=
--0.4
Ta= 0.4

0 0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR04575 Base-to-Emitter Voltage, VBE – V ITR04576
hFE -- IC hFE -- IC
1000 1000
2SA1770 2SC4614
7 7
VCE=--5V VCE=5V
5 5

Ta=75°C
3 3
DC Current Gain, hFE

DC Current Gain, hFE

Ta=75°C
2 2 25°C

100
--25°C
100
--25°C
25°C
7 7
5 5

3 3

2 2

10 10
5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC – A ITR04577 Collector Current, IC – A ITR04578
f T -- IC Cob -- VCB
5 100
2SA1770 / 2SC4614 2SA1770 / 2SC4614
Gain-Bandwidth Product, fT – MHz

7
3
Output Capacitance, Cob – pF

5
2 2SC4614

2SA1770 3 2SA
100 177
0
2 2SC
7 461
4
5
10
3
7
2
5

10 (For PNP, minus sign is omitted.) 3 (For PNP, minus sign is omitted.)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 1.0 2 3 5 7 10 2 3 5 7 100
Collector Current, IC – A ITR04579 Collector-to-Base Voltage,VCB– V ITR04580
VCE(sat) -- IC VCE(sat) -- IC
3 3
2SA1770 2SC4614
2 2
IC / IB=10 IC / IB=10
Saturation Voltage, VCE (sat) – mV

Saturation Voltage, VCE (sat) – mV

--1000 1000
7 7
5 5

3 3
Collector-to-Emitter

Collector-to-Emitter

2 2

°C
--100
25 100 °C
25
7
5°C 7
5 Ta=7 5 Ta=75°C
°C
--25 --25°
C
3 3
2 2
7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC – A ITR04581 Collector Current, IC – A ITR04582

No.3578–3/4
 2SA1770/2SC4614
VBE(sat) -- IC VBE(sat) -- IC
--10 10
2SA1770 2SC4614
7 IC / IB=10 7 IC / IB=10
5 5
Saturation Voltage, VBE (sat) –V

Saturation Voltage, VBE (sat) –V

3 3

2 2
Base-to-Emitter

Base-to-Emitter
--1.0 1.0
Ta=--25°C Ta=--25°C
7 7
75°C 75°C
5 25°C 5 25°C

3 3
7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC – A ITR04583 Collector Current, IC – A ITR04584
ASO PC -- Ta
5 1.2
ICP=2.5A 2SA1770 / 2SC4614 2SA1770 / 2SC4614
3
2 IC=1.5A 10 10m
1m

0m s 1.0
s

Collector Dissipation, PC – W
1.0
Collector Current, IC – A

7
5
0.8
3 DC
2 op
era 0.6
0.1 tio
n
7
5
0.4
3
2

0.01 Ta=25°C 0.2

7 Single pulse
5
3
For PNP, minus sign is omitted. 0
5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE – V ITR04585 Ambient Temperature, Ta – ˚C ITR04586

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of September, 2003. Specifications and information herein are
subject to change without notice.

PS No.3578–4/4
Mouser Electronics

Authorized Distributor

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