Ordering number : ENN6989A

2SC5763
NPN Triple Diffused Planar Silicon Transistor

2SC5763

Switching Regulator Applications

Features Package Dimensions

• High breakdown voltage. unit : mm
• High reliability. 2010C
• High-speed switching.
[2SC5763]
• Wide ASO. 10.2 4.5
• Adoption of MBIT process. 3.6 5.1 1.3

2.7
6.3
15.1
18.0
1.2

5.6

14.0
0.8 0.4 1 : Base
2 : Collector
1 2 3 3 : Emitter

2.7
Specifications 2.55
SANYO : TO-220
2.55

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 700 V
Collector-to-Emitter Voltage VCEO 400 V
Emitter-to-Base Voltage VEBO 8 V
Collector Current IC 7 A
Collector Current (Pulse) ICP PW≤300µs, Duty cycle≤10% 14 A
1.75 W
Collector Dissipation PC
Tc=25°C 55 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=400V, IE=0 10 µA
Emitter Cutoff Current IEBO VEB=5V, IC=0 10 µA
Continued on next page.
* : The hFE1 of the 2SC5763 is classified as follows.
Rank M N
hFE1 20 to 40 30 to 50

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0301 TS IM TA-3501 / 71801 TS IM TA-3234 No.6989-1/4
 2SC5763

Continued from preceding page.

Ratings
Parameter Symbol Conditions Unit
min typ max
hFE1 VCE=5V, IC=0.8A 20* 50*
DC Current Gain hFE2 VCE=5V, IC=4A 10
hFE3 VCE=5V, IC=1mA 10
Collectoe-to-Emitter Saturation Voltage VCE(sat) IC=4A, IB=0.8A 0.8 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=4A, IB=0.8A 1.5 V
Gain-Bandwidth Product fT VCE=10V, IC=0.8A 17 MHz
Output Capacitance Cob VCB=10V, f=1MHz 80 pF
Collector-to-Base Breakdown Voltage V(BR)CBO IC=1mA, IE=0 700 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=5mA, RBE=∞ 400 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 8 V
Turn-On Time ton IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V 0.5 µs
Storage Time tstg IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V 2.5 µs
Fall Time tf IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V 0.25 µs

Switching Time Test Circuit

IB1
PW=20µs
OUTPUT
D.C.≤1% IB2

INPUT RB
VR RL

50Ω
+ +

100µF 470µF

VBE= --5V VCC=200V

IC -- VCE IC -- VBE
10 8
VCE=5V
A
A 700mA 600m 7
8 900mA 800m
A
1000m
Collector Current, IC -- A

Collector Current, IC -- A

500mA 5
6 400mA
300mA 4
200mA
C
20 °

25°C
--40°C

4
3
1

100mA
Ta=

2
2
1

0
IB=0 0
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-to-Emitter Voltage, VCE -- V IT03053 Base-to-Emitter Voltage, VBE -- V IT03054
hFE -- IC VCE(sat) -- IC
100 1.0
VCE=5V IC / IB=5
7 7

Ta=120°C
5 5
Saturation Voltage, VCE(sat) -- V

3 25°C 3
DC Current Gain, hFE

--40°C
2 2
Collector-to-Emitter

10 0.1
7 0°C
7
= 12
5 5
--40°C Ta

3 3
25°C
2 2

1.0 0.01
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- A IT03055 Collector Current, IC -- A IT03056

No.6989-2/4
 2SC5763
VBE(sat) -- IC SW Time -- IC
10 10
IC / IB=5 VCC=200V
7 7
IC / IB1=5, IB2 / IB1=2.5
Saturation Voltage, VBE(sat) -- V

5 5 R load

Switching Time, SW Time -- µs

tstg
3 3

2 2

1.0 1.0
Ta= --40°C
Base-to-Emitter

7 7
5 120°C 5
25°C
3 3 tf
2 2

0.1 0.1
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- A IT03057 Collector Current, IC -- A IT03058
Forward Bias A S O Reverse Bias A S O
3 2
ICP
2 ICP=14A ≤50µs
10 IC=7A 10 10
7
0µ
5 DC s 7
1m
Collector Current, IC -- A

Collector Current, IC -- A
op 5
s

3 era
2 tio
10

n 3
ms

1.0 2
S/

7
B

5
Li

3 1.0
mi

2
ted

7
5
0.1
7
5 3
3 2
Tc=25°C
2 Tc=25°C IB2= --1.2A
0.01
Single pulse 0.1
L=500µH, Single pulse
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector-to-Emitter Voltage, VCE -- V IT03077 Collector-to-Emitter Voltage, VCE -- V IT03060
PC -- Ta PC -- Tc
2.0 80

1.8
1.75 70
Collector Dissipation, PC -- W

Collector Dissipation, PC -- W

1.6
60
1.4 55

1.2
No 50
he
at
1.0 sin 40
k
0.8
30
0.6
20
0.4
10
0.2

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT03061 Case Temperature, Tc -- °C IT03062

No.6989-3/4
 2SC5763

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of December, 2001. Specifications and information herein are subject
to change without notice.

PS No.6989-4/4