Ordering number : ENN7501

2SJ651
P-Channl Silicon MOSFET

2SJ651

DC / DC Converter Applications

Features Package Dimensions

• Low ON-resistance. unit : mm
• Ultrahigh-speed switching. 2063A
• 4V drive. [2SJ651]
4.5
10.0 2.8
3.2

3.5
7.2
16.0
18.1
2.4

5.6
1.6
1.2

14.0
0.7
0.75

1 2 3 1 : Gate
2.55 2.55 2 : Drain

2.4
3 : Source
Specifications
2.55 2.55 SANYO : TO-220ML
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID --20 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --80 A
2.0 W
Allowable Power Dissipation PD
Tc=25°C 25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --60 V
Zero-Gate Voltage Drain Current IDSS VDS=--60V, VGS=0 --1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance yfs VDS=--10V, ID=--10A 11 17 S
Marking : J651 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52703 TS IM TA-100559 No.7501-1/4
 2SJ651

Continued from preceding page.

Ratings
Parameter Symbol Conditions Unit
min typ max
RDS(on)1 ID=--10A, VGS=--10V 45 60 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--10A, VGS=--4V 65 92 mΩ
Input Capacitance Ciss VDS=--20V, f=1MHz 2200 pF
Output Capacitance Coss VDS=--20V, f=1MHz 220 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 165 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 18 ns
Rise Time tr See specified Test Circuit. 115 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 190 ns
Fall Time tf See specified Test Circuit. 120 ns
Total Gate Charge Qg VDS=--30V, VGS=--10V, ID=--20A 45 nC
Gate-to-Source Charge Qgs VDS=--30V, VGS=--10V, ID=--20A 7.4 nC
Gate-to-Drain“Miller”Charge Qgd VDS=--30V, VGS=--10V, ID=--20A 9 nC
Diode Forward Voltage VSD IS=--20A, VGS=0 --0.95 --1.2 V

Switching Time Test Circuit

VIN VDD= --30V

0V
--10V
ID= --10A
VIN RL=3Ω
D VOUT
PW=10µs
D.C.≤1%
G

2SJ651
P.G 50Ω S

ID -- VDS ID -- VGS
--50 --45
Tc=25°C VDS= --10V
0V

--45 --40
C
--1

25°

--40 -- 6V
V

--35
C
°C
--8

75°
Drain Current, ID -- A

Drain Current, ID -- A

--25

--35
--4V --30
Tc=

--30
--25
--25
--20
--20
--15
--15
C
5°C 75°

VGS= --3V --10

--10
=
°C
Tc

--5 --5
25

--2

0 0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Drain-to-Source Voltage, VDS -- V IT06170 Gate-to-Source Voltage, VGS -- V IT06171

No.7501-2/4
 2SJ651
RDS(on) -- VGS RDS(on) -- Tc
160 140
On-State Resistance, RDS(on) -- mΩ ID= --10A

On-State Resistance, RDS(on) -- mΩ

140 120

120
100
--4V
S=
100
VG
80
A,
Static Drain-to-Source

Static Drain-to-Source
-- 10 V
80
I D= --10
Tc= 75° S=
C 60 A, VG
60 = --10
25°C ID
40
40 --25°C

20 20

0 0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --50 --25 0 25 50 75 100 125 150
Gate-to-Source Voltage, VGS -- V IT06172 Case Temperature, Tc -- °C IT06173
VGS(off) -- Tc yfs -- ID
--2.5 100
VDS= --10V 7
VDS= --10V

Forward Transfer Admittance, yfs -- S

ID= --1mA 5
Cutoff Voltage, VGS(off) -- V

--2.0
25°
3 C
2
5 °C
--1.5
= --2
10 Tc
75°
7 C
5
--1.0
3
2
--0.5
1.0
7
0 5
--50 --25 0 25 50 75 100 125 150 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100
Case Temperature, Tc -- °C IT06174 Drain Current, ID -- A IT06175
IF -- VSD SW Time -- ID
--100 5
7 VGS=0 VDD= --30V
5
3 VGS= --10V
3 td(off)
Switching Time, SW Time -- ns

2
2
Forward Current, IF -- A

--10
7
5
3 100 tf
2
7
--1.0
7 5
5°C

--25°C
25°C

5 tr
Tc=7

3
2 3

--0.1 2 td(on)
7
5
3
2 10
--0.01 7
0 --0.3 --0.6 --0.9 --1.2 --1.5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Diode Forward Voltage, VSD -- V IT06176 Drain Current, ID -- A IT06177
Ciss, Coss, Crss -- VDS VGS -- Qg
5 --10
f=1MHz VDS= --30V
--9 ID= --20A
3
Gate-to-Source Voltage, VGS -- V

Ciss
2 --8
Ciss, Coss, Crss -- pF

--7
1000
--6
7
--5
5
--4
3 Coss
--3
2 Crss
--2

100 --1

7 0
0 --5 --10 --15 --20 --25 --30 0 5 10 15 20 25 30 35 40 45
Drain-to-Source Voltage, VDS -- V IT06178 Total Gate Charge, Qg -- nC IT06179

No.7501-3/4
 2SJ651
ASO PD -- Ta
2 2.5

--100 IDP= --80A <10µs 10

µs

Allowable Power Dissipation, PD -- W

7
5 10
0µ 2.0
3 s
ID= --20A 1m
Drain Current, ID -- A

2 10 s
1 ms
--10 DC 00m 1.5
7 op s
5 era
tio
3 n
2 Operation in this area 1.0
is limited by RDS(on).
--1.0
7
5 0.5
3
2 Tc=25°C
Single pulse 0
--0.1
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 0 20 40 60 80 100 120 140 160
Drain-to-Source Voltage, VDS -- V IT06180 Ambient Tamperature, Ta -- °C IT06181
PD -- Tc
30
Allowable Power Dissipation, PD -- W

25

20

15

10

0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C IT06182

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of May, 2003. Specifications and information herein are subject
to change without notice.

PS No.7501-4/4
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