NEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2$C2026 DESCRIPTION Suitable for low noise amplifier in the VHF to UHF band, PACKAGE DIMENSIONS in millimeters (inches) FEATURES © NF 3.0dB TYP. @f = 500 MHz © Gye 15dB TYP. @f = 500 MHz one © fr 2.0GHz TYP. rd Ped lz] ABSOLUTE MAXIMUM RATINGS. 3S Maximum Temperatures as ° wow [zz Storage Temperature............ -66 to +150°C ae BE Junction Temperature #150 °C Maximum HTT xz [fe Maximum Power Dissipation (Ta = 25 °C) bi — 28 Total Power Dissipation............., 250 mW oo Eo Maximum Voltages and Current (Ta=25 °C) 23 Vcao Collector to Base Voltage ........ 30 V Be Vee Collector to Emitter Voltage . “4oy 7 Veso Emitter Voltage +30 V eee kecemeaae 1. ease EIA, 8c-4a le Collector Current . . 50 mA 2. EMITTER JeoEC : 70.02 3. COLLECTOR ic: Pad ELECTRICAL CHARACTERISTICS (Ta = 25 °C) syMBOL CHARACTERISTIC MIN. TYP. MAX, UNIT TEST CONDITIONS hee De Current G 28 0 200 Vee=10 V, 1e=10 ma fr Gain Bandwidth Product 18 20 GHz Vce*10V, le=10 ma Cob Output Capacitance om 1a PF Vea=10V, 1e=0, f=1,0 Mi* Spe Power Gain 13 16 68 ——_-Vee=10:V, le=10 mA, f2500 MHz Vce=10 V, 1o=3.0 mA, NE Noise Figure 3040 ee ane eau eso Collector Cutoff Current on WA Vea=t5V, 1e-0 eso Emitter Cutoff Current on HA Vee"20V, le * The emitter terminal should be connected to the gurad terminal of the three-terminal capacitance bridge.