UNIVERSITY OF VICTORIA FINAL EXAMINATION ~ APRIL 2019 ECE 320 ~ ELECTRONIC DEVICES: I CRN/SECTION 20847/A01 TO BE ANSWERED IN BOOKLETS DURATION: 3 hours INSTRUCTOR:___Dr. C. Papadopoulos STUDENTS MUST COUNT THE NUMBER OF PAGES IN THIS EXAMINATION PAPER BEFORE BEGINNING TO WRITE, AND REPORT ANY DISCREPANCY IMMEDIATELY TO THE INVIGILATOR. THIS QUESTION PAPER HAS 3 PAGES, INCLUDING THIS COVER SHEET. NOTES, CALCULATORS AND REQUIRED COURSE TEXTBOOKS (VOLS. I - IV MODULAR SERIES ON SOLID STATE DEVICES BY PIERRET, NEUDECK) PERMITTED. ASSUME T= 300 K UNLESS OTHERWISE STATED. ANSWER ALL QUESTIONS. REMAIN SEATED WHILE EXAMS ARE BEING COLLECTED. OVER[ECE 320 ~ Electronic Devices: Section AO1, Page 2 of 3 rsT(300 K) = 0026.V. m6 63410" —s,6=3x10" mis; ky =1:3810 YK; q=1.6x10-%C; m, =9.11010"Kg; £5 = 8.8510 Fim; LeV = 16x10" 5 Si: m,(300K)=1.5x10"cm™; m, my =1.08,m,/m, =0381~ densi of states; m,/my =026,m, /m = 0:386~ conductivity: 6, = SECTION I 1. The potential well shown below is a simple model of a FLASH memory cell. What factor(s) will determine how long charge can be stored on the floating-gate? [1.5 pts] ——V a Vo b Ni. Cs 2. A germanium sample is doped with 10'tcm™ phosphorus atoms and 2x10"cm™ boron atoms. Find the thermal equilibrium carrier concentrations. [2 pts.] 3. A semiconductor sample has £,=E, and the carrier mobilities are found to increase at low temperatures. Which of the following is true? [2 pts.] tp |. All of the above. b. c. d, SECTION II 1. What is the approximate built-in potential for the metal-silicon junction shown below? [2 pts.] a. 25V. b. 112V. c. OV. 4, More information required. 2. Given otherwise identical parameters, which of the following p-n junctions will behave closest to an ideal diode? [1.5 pts.] a. Si. b. Ge. c. GaAs.ECE 320 ~ Electronic Devices: Section AOI, Page 3 of3 . Consider a p-n junction made from Ge regions doped 3x10""cm™ p-type and 10!em™ n-type with neutral region widths of 100 um and 25 um, respectively. (i) What is the value of the built-in voltage? [2.5 pts.] (ii) Sketch the excess minority carrier distribution on either side of the junction under forward bias if Z,=Z, =50 um. (2.5 pts.] (ii) Estimate the reverse-bias breakdown voltage. [2.5 pts.] SECTION III . Consider an idealized silicon npn bipolar transistor structure with Ny, =10'%cm™, Te =02x10%s, t,c=0.4x10%s and Ng =7x10%em>, Ny =10cm, t49=0.5x10%s A=10"cm?, The emitter width is 2 um, the base width is 500 nm and the collector width is 20 um. i, Caleulate fy forthe transistor. [4.5 pts.] ii, Write down the values of the Ebers-Moll model parameters for the transistor and calculate its ‘output current if Jg= 1 wA and Vac = -3.20 V. [4.5 pts.] .. Design the doping levels and dimensions of a silicon npn bipolar transistor such that the de current gain is 150, the base Gummel Number is 10"? cm” and the punchthrough voltage is at least 50 V. Assume that 5, 10‘ in the base, r, =10"’s in the emitter and r, =10~s in the collector. [7.5 pts.] SECTION LV . A MOS capacitor with N, =2x10'%cm semiconductor near the interface? [2 pts.] biased as shown below. What is the resistivity of the a. >0.7Q-cm. b. <0.70-cm. c. None of the above. . Calculate the transconductance of an n-channel silicon MOSFET with 41, = 250cm?V~'s", L=500nm, 101m. and Vo= LV. [2 pts.] =Sym, icon dioxide, a bulk charge factor of 1.5 and Vr= 1 V that is operated at Vo= 3 V An n-well CMOS process has Vo = 0.75 V; substrate doping N, Nz =10'cm® ; and heavily doped p-channel source/drain of 0.25 um depth. (i) Design the minimum a= ep lain taal egions'iougHow th well (4 pin] (Gi) IF the pute'erthe? polysilicon, (Q, /q)=10'°cm™ and the oxide is a 2 nm high-k material with ¢, =20, find Vr for both types of MOSFETs in part (i) (Vc=V). [6 pts.] (iii) Design the channel dimensions of the resulting n- channel MOSFET to have a saturation current of 0.25 mA when Ve is 0.4 V above threshold. Assume Hq = 200 em?V~'s"' and a bulk-charge factor of 1.25. [3.5 pts.] (iv) At what channel length will the MOSFET in (iii) have carriers reach their maximum velocity at the source? [4.5 pts.] =10cm™; n-well doping END