PERVIOUS MULTIPLE CHOCE & SHORT ANSWER QUESTIONS Quantum mechanical tunneling of electrons through a potential barrier depends on The barrier width GaAs is used more often than So for light emitting devices because it: ‘Absorbs more light, and, Has a direct band gap (Note: Si has an indirect band gap and is poor at emitting light) Explain why tunneling is large in heavily doped metal-semiconductor contacts. The narrow depletion width in the semiconductor results in a small barrier width for tunneling. Since tunneling increases exponentially with decreasing barrier width, it becomes large in this case ‘An extrinsic semiconductor bar is used in a Hall Effect experiment. Can data obtained be used to calculate the mobility of electrons and holes in the sample? No The excess minority carrier concentration on either side of a p-n junction under forward bias are determined by: The doping levels, and, the applied bias Introducing defects into a p-n diode allows it to switch faster. True Explain why avalanche breakdown occurs at smaller bias for a Ge p“n diode compared to a Si diode with the same doping levels. To create an electron-hole pair requires energy on the order of the energy band gap. Since Ge has a smaller E, than Si, avalanche breakdown will occur ata smaller bias Tunneling of a particle with E>n, while sample B has n=p=n,. Which sample has the highest electron mobllty? More information is required When an electric field is applied to a solid the free charge carriers respond by: ‘) Moving in a straight line along field direction b) Moving randomly ¢] None of the above ‘Ohms law applied to both drift and diffusion of carriers in a semiconductor. False Light with energy greater than the band gap energy Is incident on a semiconductor. The conductivity: Increases A short base p-n junction diode described by the ideal diode equation has a constant reverse current density as a function of applied bias. False (however, true for long-base diodes) Hole effective mass is usually larger than electron because to move a hole, all the electrons around the hole also have to True Where is the magnitude of the built in electric field of a p-n junction greatest? Metallurgical junctionThe depletion approximation is exact for an abrupt (step) p-n junction? False Where is there more charge in a p-n junction? a)Heavily doped side b) Lightly doped side _c) None of the above You are given two silicon p-n diodes: Diode A is heavily doped. have the smallest reverse breakdown voltage? Diode A ode B is lightly doped. Which diode is most likely to If a fast switching speed is the most important parameter for a particular application, what type of diode would you use? Schottky Doping Gradient Improves Base Transport Factor for IC transistors True Which bias configuration of a BIT is most appropriate for signal amplification? Forward-Active The base transport factor is a measure of? Recombination in the base region Why is it desirable to dope the base of a BIT as lightly as possible? Increase the emitter injection efficiency = Increase the collector breakdown voltage = Lower base-collector capacitance ‘Advantages/Disadvantages of metal-base transistor versus convention transistor Advantages: Very high emitter injection efficiency; no minority charge storage delay times; very low base resistance Disadvantages: High base current (due to electrons flowing through base); potential barrier at the collector causes ’ reduction in output current ‘A bipolar transistor is to be used as a switch. What determines how quickly the transistor can be placed into cut-off {assuming thermal equilibrium)? Space-Charge Capacitance A bipolar transistor is to be used as an amplifier. Which doping configuration is most suitable? E>B>C: Because this configuration yields a high gain and reduced base-width modulation A bipolar transistor is to be used as an amy EBC r. Which width configuration is most suitable? Emitter band gap narrowing leads to decreased carrier injection Into the base of a bipolar transistor under forward active bias. False