TOSHIBA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT INTEGRATED CIRCUIT TECHNICAL DATA ‘TD62064P, TDG2064AP, TDE2064F, TDG2064AF ‘TD62074P, TD62074AP, TD62074F, TD62074AF SILICON MONOLITHIC 4CH HIGH-CURRENT DARLINGTON SINK DRIVER ‘The TD62064P /AP/F/AF and TD62074P/ AP/F/AF are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for switching inductive loads and all units of TD62074P /AP/F/AF feature uncommitted collectors and emitters for isolated darlington applications. For proper operation, the substrate (SUB) must be connected to the most negative voltage. Applications include relay, hammer, lamp and stepping moter drivers. FEATURES, Output current (single output) 1.5 (Max) High sustaining voltage output 35V (Min.) (TD62064P /F, 0747 /F) 50V (Min.) (TD62064AP / AF, O74AP /AF) ‘Ths2064P /AP/F/ AF THs2074P AP / EJ AF Output clamp diodes leolated darlingtan array Input compatible with TTL and 5V CMOS GND and SUB terminal = heat sink Package type-P, AP : DIP-t6pin Package type-F, AF : HSOP-16pin PIN CONNECTION (TOP VIEW) TD62064P / AP es suc TO62068 TOs206887 os207aP Toszo74ap hig aa 1P16-9-3008, ‘Toe2064F TOS2064AF To62078F Hs0P16-7-300 Weight DEISES00R 3.19 fp} HSOP16-P-300 : 0:50g (Typ. TD62074P / AP veay snc ot cup wm SS 3 ano 8 fa ta fa oe SPR Te SS a See STU TOSHIBA CORPORATIONINTEGRATED CIRCUIT ‘TD62064P, TDG2064AP, TDE2064F, TDG2064AF TOSHIBA ‘TD62074P, TD62074AP, TD62074F, TD62074AF TECHNICAL DATA TD62064F / AF TD62074F / AF HEAT snc ear sik fon cw ne “GHD oe cw MGW 13 cxo_ 08 fel fs) Fd fal [21 fi) fol (51 fe) fe) fl fr) fol fs), mor ne ATSIR CD OF COM OND can SCHEMATICS (EACH DRIVER) TD62064P/ AP/F/ AF eguwon (Note) The input and output parasitic diodes cannot be used as clamp diodes. ‘MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC ‘SYMBOL RATING UNIT Output Sustaining [PF TOs, Voltage ‘AP, AF| VCE (SUS) =05~50 v Output Current our 15. Alch input Current WN 30 mA, input Voltage Vin Tos~17, v Clamp Diode PF 35 Reverse Voltage _[AP, AF] VR “Note 1) 50 v ‘Clamp Diode Forward Current] Ip (Note 1) 15: Arch PF 35, Isolated Vottage FEE = veyg (Note 2) 35 v P, AP TATTZI (Note 3) Power Dissipation Tear | PD 09/14 (Note 4)| (Operating Temperature Tope 40~85 © Storage Temperature Tits =55~150 % (Note 1) TD62064P/AP/F/ AF (Note 2) TD62074P/AP/F/ AF (Note 3) On Glass Epoxy (50x50 1.6mm Cu 50%) (Note 4) On Glass Epoxy (60x30 1.6mm Cu 30%) TD62064P —2 1995 — 529) TOSHIBA CORPORATIONINTEGRATED CIRCUIT TOSHIBA TECHNICAL DATA ‘TD62064P, TDG2064AP, TDE2064F, TDG2064AF ‘TD62074P, TD62074AP, TD62074F, TD62074AF RECOMMENDED OPERATING CONDITIONS (Ta = ~ 40~85°C) (CHARACTERISTIC. SYMBOL TEST CONDITION min. | Tye. [Max.| uNiT Output Sustaining PF Ts Voltage ‘AP AF] VCE (SUS) of— [so] ¥ DCI Creuit, Ta=25%C o | — [1250 FAP Tar 25ms Duty= 10% 0 | — | 1250 output current. | (Note | tour {4'circuits Duty=50%[ 0 | — | 390] mA/ch FAP = 120° Duty= 10% | 0 | — | o07 (Note 2) Ta= 85°C Duty = 50% o|— 172. Vin o| — B| Vv Input Voltage [(Output On) | Vin(on)_[lour= 125A 25 | — 6] Vv (Output Off | Vin (OFF) o[— | oa v input Current tin of— | 2] ma (Clamp Diode [PF of— 13 eae ode ae een Vp | TO6z064P AP /F AF f7 = 3) y ‘Clamp Diode Forward Current | _Ip — | — [125 PF = f= Isolation Voltage 5 Vsua |7D62074P/AP/F/AF =p= [os] ¥ BAP Ta=85e Woe D pa Power Dissipation [Pe °> en aEe Nie —{=| 4} w (Note 1) On Glass Epoxy (50x 50x 1.6mm Cu 50%) (Note 2) On Glass Epoxy (60x 30x 1.6mm Cu 30%) TD82064P=3 199 = 9-29 TOSHIBA CORPORATIONINTEGRATED CIRCUIT TOSHIBA TECHNICAL DATA ‘TD62064P, TDG2064AP, TDE2064F, TDG2064AF ‘TD62074P, TD62074AP, TD62074F, TD62074AF ELECTRICAL CHARACTERISTICS (Ta = 25°C) TEST ‘CHARACTERISTIC symeot|cik.| TEST CONDITION —_ | man. | Tye. | Max. | UNIT cuir AP ar Veg=50V, Ta=25 == 0 Output Leakage Veg =50V, Ta=85%C = [=] 500 ‘Current 'cex 1 = = 30 | “A PF Vee =35V, Ta= 85°C — [— [500 Collector-Emitter Saturation [lour= 125A, lin —/[— | 16 Voltage VE (sat) | 7 gur=0.75A, lin — |— [125| * DC Current Transfer Ratio hee | 2 |Vce=2V ae Input Voltage (Output On) Vino | 2 [lour= 1258, = [24pv = [= |50 Clamp Diode Leakage |": *F \ 4 = [= Tio] , ‘Current F R = = 50] = Clamp Diode Forward Volage | vp] 5 == 2>v Input Capacitance cue [sy = [oF PF turn-on Delay ton =| oa] = AP, AF : . y= 420 = 7 |eyeisor EERO ss Turn-Off Delay torr =| 0} - AP. AF Test ciRCUIT 1. Ieex, 2. Vee (sat): HEE 3. VIN (ON) new ore oven ore vce — — i vepen vniom | ve atk 5. Ve 6. CIN ren ot ST ee | if = ove orn TED =A 1995 = 5-29. TOSHIBA CORPORATIONINTEGRATED CIRCUIT ‘TD62064P, TDG2064AP, TDE2064F, TDG2064AF TOSHIBA ‘TD62074P, TD62074AP, TD62074F, TD62074AF TECHNICAL DATA 7. ton. torr wneur Oren Your puse (ote 1 ‘ wthote 9 z q et ° (Note 1) Pulse Width 50,s, Duty Cycle 10% Output Impedance 501, t,=5ns, ty= 10ns (Note 2) C_ includes probe and jig capacitance TD62064P—5 195-929 TOSHIBA CORPORATIONINTEGRATED CIRCUIT TOSHIBA TECHNICAL DATA ‘TD62064P, TDG2064AP, TDE2064F, TDG2064AF ‘TD62074P, TD62074AP, TD62074F, TD62074AF Inout CURRENT yy (dd ures CURRENT tour ‘OUTPUT cuRRENT Qur (mA lout = VE (sat) 1 louT = VCE (sat) 7 Tome Ie ronson /. ‘7D62074P ial z ‘TO620744P f 3 ') 7 te 7) J acme ‘ / z 7 2 / :4 colroncuia sashnow voiace Gieecroneupih sarunol vocace Veta a ae tw = Vn , he “onsen ossoear iN 4 sz074ans spevoras | LOyt= 100A, Ht T 7 ini £ Uy nix Ze. 40 2, i 300m | i | i} 1 1 1 an WUT YOUIAGE Yn 00 we YOU vw 10 tout = lin Po - Ta 24 “ 7 {50%50%1.6mm Cu 50%) +300 & s Hraarsef-fast—-20 a (© PFPA pin Free Ae + /. : l LI % J INPUT CURRENT yy (oA) AMBIENT TEMPERATURE Ta FO) TD62064P 6 1995 — 529) TOSHIBA CORPORATIONINTEGRATED CIRCUIT ‘TD62064P, TDG2064AP, TDE2064F, TDG2064AF TOSHIBA TD62074P, TD62074AP, TD62074F, TD62074AF TECHNICAL DATA lout ~ bury eveut lour = bury evait si ss 1 2 ra 2 xe += = pba a i: Bo) roezersar 2 3M Tan25C 3 vo) IES aa ea en aa ow curves.) curr cvs 8) 7 lour ~ bury evaut lour = DUTY evaie Bu = = z 5 HRS 5 Xo SN En SS i Eo SSS oe > —E “TO62064F/ AF Cc — ‘TDS20646/ AF FT B=] tee so] mew PRS vs) SS sf SS 0 0 0 3 © 50 6 70 00 90 100 a DUTY ereLe bury evcle (%) TD62064P 7 1995 529) TOSHIBA CORPORATIONINTEGRATED CIRCUIT ‘TD62064P, TDG2064AP, TDE2064F, TDG2064AF TOSHIBA ‘TD62074P, TD62074AP, TD62074F, TD62074AF TECHNICAL DATA OUTLINE DRAWING ipt6-P-3008 16 9g Booonnoand gs | og j 3 JSS SsSsassg 19.75MAX . 19.25+0.2 501 }~ Og — 92: #/ & 3) og | 3 O.7351VP, 1.420.4 [ost0aprrore Weight : 1.119 (Typ) TOSHIBA CORPORATIONINTEGRATED CIRCUIT ‘TD62064P, TDG2064AP, TDE2064F, TDG2064AF TOSHIBA ‘TD62074P, TD62074AP, TD62074F, TD62074AF TECHNICAL DATA OUTLINE DRAWING HscP16-P.200 Unit + mm dang—=lpanf a] 2 gg s| 5 13.5MAX 13.040.2 3} 0.9240.2 Weight : 0.50g (Typ.) TOSHIBA CORPORATION