NAME: _______________________________ Quiz 4 Set A Sem.

2 20/21 UNITEN

ID: __________________ Date: 30/3/21 (Tuesday) /20

At equilibrium, the ratio of the dopant in N side against P side is 4:1. Find the reverse-
biased voltage pn diode (Ge) in a wafer fabrication plant with a build-in potential and
electric field of 0.61 V and 400 kV/cm respectively.

List of Equations
kBT  N a N d 
Built-in voltage Vbi  ln  2 
e  ni 

e.N d .xn
Electric Field Emax 
S

Total depletion layer width in pn diode

W (Vbi )  x p (Vbi )  xn (Vbi )

2 sVbi  Nd  2 sVbi  Na  2 sVbi  N d  N a 

W (Vbi )       
e  Na ( Na  Nd )  e  Nd ( Na  Nd )  e  Na Nd ) 

List of Physical Constants

Quantity Symbol Value

Thermal voltage at 300 K VT = kBT/e 0.026 V
Elementary charge e 1.6 × 10-19 C
Permittivity in vacuum ε0 8.85 × 10-14 F/cm

Material Conduction Band Valence Band Intrinsic Carrier Dielectric

(at 300K) Effective Density (NC) Effective Density (NV) Concentration (ni = pi) Constant
(cm-3) (cm-3) (cm-3) (k)

Si 2.78 x 1019 9.84 x1018 1.5 x 1010 11.7

Ge 1.04 x 1019 6.00 x10 18 2.33 x 1013 16.2

GaAs 4.45 x 1017 7.72 x 1018 1.84 x 106 13.18