Universidad Tecnológica

de Durango

Técnico Superior
Universitario en
Mecatrónica
ESTRUCTURA Y
PROPIEDADES DE LOS
MATERIALES
Unidad II
PN junction behavior (direct
polarization)

Nombre del alumno: Cristobal Chavez

Cuatrimestre y grupo: 4° A
Docente: M.C. Bárbara Patricia Carrales Campa
Victoria de Durango, Dgo a 30 de marzo de 2023
Técnico Superior Universitario en Mecatrónica
Estructura y propiedades de los materiales
Unidad II

In a semiconductor material, the transfer of electrons occurs through the PN

junction, which is the junction between a P-type region (with excess holes) and
an N-type region (with excess electrons). When the PN junction is forward
biased, that is, a positive voltage is applied to the P side and a negative voltage
is applied to the N side, current flows through the junction. This is because the
applied voltage causes electrons in the N region to move toward the P region,
while holes in the P region move toward the N region.

As the electrons and holes move to the opposite zone, they recombine with each
other. Recombination is the process by which electrons join with holes, releasing
energy in the form of photons or heat.

In summary, when a PN junction in a semiconductor material is forward biased,

electrons and holes move across the junction, recombine, and create an
electrical current.

Chavez Diaz Cristobal Alejandro 1