STUDY OF CHANNGE OF PURE

SEMI-CONDUGTOR RESISTANCE
AND CONTACT CHARACTERISTICS
P-N

:Theory
The photon generated on a semi-vector material on a generates an electron-gap pair
and increases the density of the generated charges with increasing charges with
increasing photon density this leads to an increase in the current and
. semiconductors that follow this path called a photo-emission cell such as CDS

When the photons fall on the p-n link ,the electronics and the generated gaps
propagate across the interface ,making up a front-end difference in which the value
.depends on the intensity of the falling light

Actions steps: connect the resistors a high degree can be controlled quality ,where the
resistance to the holder on the movement of the optical bank and the lamp is installed on
the same bank

equip the resistor with a voltage difference of 2 V of white light and record the values of .1
the current repeat the previous operation and the same distances d after the placement of
different optical filters

graphical relation between R and 1\d**2 graphing different filters.2

 The electromagnetic spectrum
I(A)
0.08
0.1
0.12
0.13
0.14
0.24
0.32
0.5
0.84