You are on page 1of 2

PRODUCT FOCUS

Photodetectors
A wide variety of photodetectors are available to suit applications spanning from
telecommunications to single-photon counting. Neil Savage takes a look at some of the
recent offerings.

Detectors for capturing photons play a vital


role in almost any optical system. Whether
a particular application uses a standard
photodiode or more sensitive devices such
as an avalanche photodiode (APD) or a
photomultiplier tube (PMT), depends on
a variety of parameters, in particular the
strength, wavelength and duration of the
incident light. For example, in scientiic
studies where it’s important to detect a
single photon, APDs are a popular choice,
whereas for less demanding applications,
such as scanning barcodes, a standard
photodiode is usually preferred.
Ken Vensel, a regional sales manager
at Opto Diode, says growth in scanning
of digital codes, which are used on
everything from personal cheques to

SENSL
foods in supermarkets, is pushing sales
of photodiodes for barcode readers.
Even though photodiodes are not a new
technology, Vensel says that there’s always he solid-state detector consists of an he PDB-C216 from Advanced Photonix
a demand to optimize them for speciic array of Geiger-mode APDs known (Camarillo, California, USA) is a blue-
uses. “hey’ve been around for decades, but as ‘microcells’, which are individually enhanced linear-array silicon photodiode
there are continually new applications for coupled to integrated quench resistors. containing 16 elements. A borderless design
these products.” he company says the SPMScint has a means that numerous arrays can be strung
Opto Diode also makes space-qualiied gain and quantum eiciency comparable together to make the detector surface as
photodiodes for use in encoders on to that of a PMT but with the beneits of long as necessary. Designed for use in
satellites as well as making bi-cells, which conventional silicon detectors including card readers, baggage scanners and optical
are two photodiodes packaged together compactness, insensitivity to magnetic character recognition, the photodiode
with a separator between them. Bi-cells ields, a low operating voltage, robustness array has a typical dark current of 5 nA
are used for alignment, for instance for and tolerance to overexposure. Tests with (50 nA maximum). Its shunt resistance
paper being fed into a printer. When the a lutetium oxyorthosilicate scintillator is typically 200 MΩ with a minimum
signal in the two photodiodes matches crystal, 3 × 3 × 15 mm3 in size, have shown value of 100 MΩ. he spectral range of
correctly, it means the object is aligned. an energy resolution of 12.5% at 511 keV. operation is from 350 nm to 1,100 nm. he
“One of the hot areas in the military is he device is available with an active area detector has low noise equivalent power of
what’s called quadrant detectors,” Vensel of 1 × 1 mm2 or 3 × 3 mm2, with microcells 2 × 10–14 W Hz–1/2, and the typical response
says. hese are bi-cells paired together of either 20 µm or 35 µm in size, to suit a time is 190 ns at 0 V and 13 ns at 10 V. he
to provide alignment in two directions. particular application’s requirements for operating temperature is from –20 °C to
hey can be used to improve the aiming of detection eiciency and dynamic range. 75 °C and the storage temperature is from
missiles at a target. he detector is housed in a TO-5 package –40 °C to 100 °C.
and covered with a 300-µm-thick layer of www.advancedphotonix.com
PRODUCT ROUND-UP transparent epoxy resin, which protects the
detector surface and allows it to be in close AMS Technologies (Munich,
he SPMScint from SensL (Cork, proximity to a crystal, optical ibre or other Germany) is distributing a series of
Ireland) is a high-performance silicon waveguide facet. he detector is designed photodiodes for optical communications
photomultiplier designed for scintillator- for use in equipment for nuclear medicine, applications up to 10 Gbit s–1,
based measurements of radiation. he homeland security, nuclear radiation manufactured by OSI Optoelectronics
device ofers single-photon sensitivity detection, environmental monitoring, (Hawthorne, California, USA). he
and can be placed less than 1 mm from high-energy physics and X-ray detection. photodiodes are made from either InGaAs
a scintillator crystal’s emitting surface. www.sensl.com for use at wavelengths of around 1,310 nm

730 nature photonics | VOL 1 | DECEMBER 2007 | www.nature.com/naturephotonics


© 2007 Nature Publishing Group
PRODUCT FOCUS
and 1,550 nm or gallium arsenide and has a selection of ultralow-noise APDs has an active area of 1 × 1 mm2, and
silicon for use with 850-nm applications. in diferent packages with high quantum each pixel contains a quenching circuit
he silicon photodiodes ofer dark current eiciency within the 900 nm to 1,700 nm so that simultaneous photon events
of less than 10 nA and rise time of less spectral range. Packaging options include can be counted separately and with a
than 1 ns for devices with an active area of a broadband, double-sided, antirelection- high degree of accuracy. According to
10 mm2, and rise time of less than 2.5 ns coated lat window; a 1,550-nm ilter; or a Hamamatsu, the devices have typical gain
for an active area of 30 mm2. he InGaAs lensed cap to enhance coupling eiciency. values from 250,000 to several million,
devices have a typical dark current ranging Applications for the APDs include free- depending on the number and size of the
from 0.02 nA to 0.2 nA and have a high space optical communications, laser range pixels — available conigurations are one
responsivity for wavelengths between inding, optical coherence tomography, hundred 100-µm2 pixels, four hundred
1,100 nm and 1,620 nm. hey are designed optical time-domain relectometry, 50-µm2 pixels or sixteen hundred 25-µm2
for high-speed telecom and datacom luorescence measurements, spectroscopy, pixels. Hamamatsu has also introduced the
networks. Gallium arsenide photodiodes chromatography and electrophoresis. G10342 series of 10-Gbit s–1 InGaAs PIN
coupled with transimpedance ampliiers are www.voxtel-inc.com photodiode receivers. he receivers operate
designed to act as high-bit-rate receivers at up to 11.3 Gbit s–1 and are designed
in local-area, metropolitan-area and other for the transmission of high-speed data
high-speed communications networks within networks using synchronous digital
that operate at 850 nm. he devices come hierarchy (STM-64 or SONET OC-192) or
in industry-standard packages with 10 gigabit Ethernet. hey are compatible
antirelection-coated windows or lenses to with the miniature device multi-source
enhance coupling eiciency. agreement (XMD-MSA) and can be used
www.ams.de in XFP transceivers.
www.hamamatsu.com
Voxtel (Beaverton, Oregon, USA) has

VOXTEL
introduced a design of linear-mode
APD that it says combines the low-noise
performance of silicon with the infrared
sensitivity of InGaAs. Monolithic APD he S10362-11 series of multipixel
wafers are grown epitaxially on an InP photon counters, from Hamamatsu
substrate, using only lattice-matched (Tokyo, Japan) uses a Geiger-mode
III–V alloys. his is in contrast to methods APD structure to achieve ultralow-level

HAMAMATSU
that fuse a silicon multiplier onto a III–V light detection. he photon counters are
absorber. he company says its design designed as replacements for PMTs, and
achieves a low ionization-coeicient ratio operate at voltages less than 90 V and are
of 0.02, compared with a ratio of 0.4 for insensitive to magnetic ields. Potential Neil Savage is a freelance science and
APDs based on InGaAs absorbers. And applications include positron-emission technology journalist based in Lowell,
where conventional InP APDs have an tomography, high-energy physics, DNA Massachusetts, USA.
excess noise factor of about 9.2 at a gain of sequencing, luorescence measurement,
M = 20, the Voxtel device has a noise factor nuclear medicine, drug discovery, medical The mention of a company’s name or product
of around 2.3. he noise performance diagnostic equipment and environmental is not an endorsement by Nature Photonics and
was measured for multiple samples at analysis. he devices ofer high photon- Nature Photonics takes no responsibility for the
from 77 K to 295 K and was found to be detection eiciency with peak sensitivity accuracy of the product information or claims
independent of temperature. he company at a wavelength of 400 nm. Each device made by companies.

nature photonics | VOL 1 | DECEMBER 2007 | www.nature.com/naturephotonics 731


© 2007 Nature Publishing Group

You might also like