BLF6G22-180RN; BLF6G22LS-180RN

Power LDMOS transistor

Rev. 01 20 November 2008 Product data sheet

1. Product prole
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1]

f (MHz) 2110 to 2170

VDS (V) 30

PL(AV) (W) 40

Gp (dB) 16.0

D (%) 25

IMD3 (dBc) 38[1]

ACPR (dBc) 42[1]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz.

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 16.0 dB N Efciency = 25 % N IMD3 = 38 dBc N ACPR = 42 dBc I Easy power control I Integrated ESD protection I Enhanced ruggedness I High efciency I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use

NXP Semiconductors

BLF6G22(LS)-180RN
Power LDMOS transistor

I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

1.3 Applications
I RF power ampliers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range

2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]

Simplied outline

Graphic symbol

BLF6G22-180RN (SOT502A)
1 3 2 2 3
sym112

BLF6G22LS-180RN (SOT502B) 1 2 3 drain gate source

[1]

1 3 2 2

3
sym112

[1]

Connected to ange.

3. Ordering information
Table 3. Ordering information Package Name Description BLF6G22-180RN anged LDMOST ceramic package; 2 mounting holes; 2 leads earless anged LDMOST ceramic package; 2 leads Version SOT502A SOT502B Type number

BLF6G22LS-180RN -

4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj
BLF6G22-180RN_22LS-180RN_1

Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature

Conditions

Min 0.5 65 -

Max 65 +13 49 +150 225

Unit V V A C C

NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 20 November 2008

2 of 11

NXP Semiconductors

BLF6G22(LS)-180RN
Power LDMOS transistor

5. Thermal characteristics
Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = 40 W Type BLF6G22-180RN BLF6G22LS-180RN Typ 0.50 0.37 Unit K/W K/W

6. Characteristics
Table 6. Characteristics Tj = 25 C unless otherwise specied. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.9 mA VDS = 10 V; ID = 270 mA VDS = 28 V; ID = 1.62 A VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 13 V; VDS = 0 V VDS = 10 V; ID = 13.5 A VGS = VGS(th) + 3.75 V; ID = 9.45 A VGS = 0 V; VDS = 30 V; f = 1 MHz Min 65 1.4 1.5 40 Typ 2.0 2.0 45 19.5 0.06 3.3 Max 2.4 2.5 5 450 Unit V V V A A nA S pF

7. Application information
Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR = 7 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 30 V; IDq = 1400 mA; Tcase = 25 C; unless otherwise specied; in a class-AB production test circuit. Symbol PL(AV) Gp RLin D IMD3 ACPR Parameter average output power power gain input return loss drain efciency third order intermodulation distortion adjacent channel power ratio PL(AV) = 40 W PL(AV) = 40 W PL(AV) = 40 W PL(AV) = 40 W PL(AV) = 40 W Conditions Min 15.0 22 Typ Max 40 11 25 38 42 8 34.5 39 16.0 Unit W dB dB % dBc dBc

7.1 Ruggedness in class-AB operation

The BLF6G22-180RN and BLF6G22LS-180RN are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 30 V; IDq = 1400 mA; PL = 180 W (CW); f = 2170 MHz.
BLF6G22-180RN_22LS-180RN_1 NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 20 November 2008

3 of 11

NXP Semiconductors

BLF6G22(LS)-180RN
Power LDMOS transistor

7.2 One-tone CW
17 Gp (dB) Gp 16 40
001aai641

60 D (%)

D 15 20

14 0 60 120 PL (W)

0 180

VDS = 30 V; IDq = 1400 mA; f = 2140 MHz.

Fig 1.

One-tone CW power gain and drain efciency as function of load power; typical values

7.3 Two-tone CW
17 Gp (dB) 16
001aai642

60 D (%) 40

20 IMD (dBc) 30

001aai643

Gp

40

IMD3

15

50 20 60

IMD5 IMD7

14 0 60 120 PL(PEP) (W)

0 180

70 0 20 40 60 80 100 PL(PEP) (W)

VDS = 30 V; IDq = 1400 mA; f = 2140 MHz.

VDS = 30 V; IDq = 1400 mA; f = 2140 MHz.

Fig 2.

Two-tone CW power gain and drain efciency as function of peak envelope load power; typical values

Fig 3.

Two-tone CW intermodulation distortion as a function of peak envelope load power; typical values

BLF6G22-180RN_22LS-180RN_1

NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 20 November 2008

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NXP Semiconductors

BLF6G22(LS)-180RN
Power LDMOS transistor

7.4 2-carrier W-CDMA

17 Gp (dB) Gp 16 40 40 ACPR D 45 20 50
001aai644

60 D (%)

30 IMD3 ACPR (dBc) 35 IMD3

001aai645

15

14 0 20 40 PL(AV) (W) 60

55 0 20 40 PL(AV) (W) 60

VDS = 30 V; IDq = 1400 mA; f = 2140 MHz (5 MHz); carrier spacing 10 MHz.

VDS = 30 V; IDq = 1400 mA; f = 2140 MHz (5 MHz); carrier spacing 10 MHz.

Fig 4.

2-carrier W-CDMA power gain and drain efciency as function of average load power; typical values

Fig 5.

2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as function of average load power; typical values

8. Test information
VGG
C7 C8 R2 C6

VDD
C5 C20 C4 R1 C3 C2

C13

C14

C15

C16

C1

C9 C10 C11

input

output

C12

C17

C18

C19

001aai646

The drawing is not to scale.

Fig 6.

Test circuit for operation at 2200 MHz

BLF6G22-180RN_22LS-180RN_1

NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 20 November 2008

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NXP Semiconductors

BLF6G22(LS)-180RN
Power LDMOS transistor

R2 C7 C8 C15 C6 C5 C4 R1

C20

C3 C13 C14

C16

C2 C11 C1 C9

C10

C17 C12

C18

C19

001aai647

The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. The drawing is not to scale.

Fig 7.

Component layout

Table 8. List of components (see Figure 6 and Figure 7) The Printed-Circuit Board (PCB) used is a double copper-clad Taconic RF35 with r = 3.5 and thickness = 0.76 mm. Component C1, C3, C12, C13 C2 C4, C5, C14, C17 C6, C7 C8 C9 C10 C11 C15, C18 C16, C19 C20 L1 R1 R2, R3
[1] Solder vertically.

Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor ferrite SMD bead SMD resistor SMD resistor

Value 13 pF 1.4 pF 220 nF 100 nF 10 F 12 pF 1.1 pF 0.7 pF 1.5 F 10 F; 50 V 220 F; 63 V 2.7 6.8
[1] [1] [1] [1] [1]

Remarks ATC 100B or capacitor of same quality ATC 100B or capacitor of same quality Vishay or capacitor of same quality Vishay or capacitor of same quality ATC 100B or capacitor of same quality ATC 100B or capacitor of same quality ATC 100B or capacitor of same quality TDK or capacitor of same quality Ferroxcube BDS 3/3/4.6-4S2 or equivalent

BLF6G22-180RN_22LS-180RN_1

NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 20 November 2008

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NXP Semiconductors

BLF6G22(LS)-180RN
Power LDMOS transistor

9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A

3
D1

U1 q C

B c

U2

p w1 M A M B M

E1

2
b w2 M C M Q

5 scale

10 mm

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02

20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774

0.505 0.006 0.495 0.003

0.374 0.375 0.366 0.364

0.045 0.785 0.035 0.745

0.210 0.133 0.170 0.123

0.067 1.100 0.057

OUTLINE VERSION SOT502A

REFERENCES IEC JEDEC JEITA

EUROPEAN PROJECTION

ISSUE DATE 99-12-28 03-01-10

Fig 8.

Package outline SOT502A

NXP B.V. 2008. All rights reserved.

BLF6G22-180RN_22LS-180RN_1

Product data sheet

Rev. 01 20 November 2008

7 of 11

NXP Semiconductors

BLF6G22(LS)-180RN
Power LDMOS transistor

Earless flanged LDMOST ceramic package; 2 leads

SOT502B

A F

3
D1 D

U1

U2

E1

2
b w2 M D M Q

5 scale

10 mm

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25

20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774

0.505 0.006 0.495 0.003

0.374 0.375 0.366 0.364

0.045 0.785 0.035 0.745

0.067 0.815 0.057 0.805

0.390 0.010 0.380

OUTLINE VERSION SOT502B

REFERENCES IEC JEDEC JEITA

EUROPEAN PROJECTION

ISSUE DATE 03-01-10 07-05-09

Fig 9.

Package outline SOT502B

NXP B.V. 2008. All rights reserved.

BLF6G22-180RN_22LS-180RN_1

Product data sheet

Rev. 01 20 November 2008

8 of 11

NXP Semiconductors

BLF6G22(LS)-180RN
Power LDMOS transistor

10. Abbreviations
Table 9. Acronym 3GPP CCDF CDMA CW DPCH EDGE GSM LDMOS LDMOST PAR PDPCH RF VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution Global System for Mobile communications Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access

11. Revision history

Table 10. Revision history Release date 20081120 Data sheet status Product data sheet Change notice Supersedes Document ID BLF6G22-180RN_22LS-180RN_1

BLF6G22-180RN_22LS-180RN_1

NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 20 November 2008

9 of 11

NXP Semiconductors

BLF6G22(LS)-180RN
Power LDMOS transistor

12. Legal information

12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]

Product status[3] Development Qualication Production

Denition This document contains data from the objective specication for product development. This document contains data from the preliminary specication. This document contains the product specication.

Please consult the most recently issued document before initiating or completing a design. The term short data sheet is explained in section Denitions. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

12.2 Denitions
Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofce. In case of any inconsistency or conict with the short data sheet, the full data sheet shall prevail.

malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specied use without further testing or modication. Limiting values Stress above one or more limiting values (as dened in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/prole/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

12.3 Disclaimers
General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or

12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com For sales ofce addresses, please send an email to: salesaddresses@nxp.com

BLF6G22-180RN_22LS-180RN_1

NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 20 November 2008

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NXP Semiconductors

BLF6G22(LS)-180RN
Power LDMOS transistor

14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product prole . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Denitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information.

NXP B.V. 2008.

All rights reserved.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 November 2008 Document identifier: BLF6G22-180RN_22LS-180RN_1