energies

Article
Artist Photovoltaic Modules
Shui-Yang Lien
Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan;
syl@mail.dyu.edu.tw; Tel.: +886-04-851-1888 (ext. 1760)

Academic Editor: Narottam Das

Received: 23 May 2016; Accepted: 11 July 2016; Published: 15 July 2016

Abstract: In this paper, a full-color photovoltaic (PV) module, called the artist PV module, is
developed by laser processes. A full-color image source is printed on the back of a protective
glass using an inkjet printer, and a brightened grayscale mask is used to precisely define regions
on the module where colors need to be revealed. Artist PV modules with 1.1 ˆ 1.4 m2 area have
high a retaining power output of 139 W and an aesthetic appearance making them more competitive
than other building-integrated photovoltaic (BIPV) products. Furthermore, the installation of artist
PV modules as curtain walls without metal frames is also demonstrated. This type of installation
offers an aesthetic advantage by introducing supporting fittings, originating from the field of glass
technology. Hence, this paper is expected to elevate BIPV modules to an art form and generate
research interests in developing more functional PV modules.

Keywords: building-integrated photovoltaic (BIPV); full-color; laser process; photovoltaic (PV) module

1. Introduction
Building-integrated photovoltaics (BIPVs) have attracted increasing attention in recent years
because of their efficient use of space and effective energy production [1,2]. Conventional silicon
wafer-based solar cells have high optoelectronic conversion efficiency, but can only be integrated
on rooftops because of limitations brought about by their opaque appearance. The development
of semi-transparent, thin-film amorphous silicon (a-Si) or microcrystalline silicon (µc-Si) solar cells
expands the applications of solar cells to glass-related technologies and products such as windows [3–6],
skylights [7–9], and other areas that require transparency and electricity generation. Modules with
10%–50% transmittance are commercially available, and are fabricated through the ablation of films
on the modules [10–14]. However, BIPVs have a small market share nowadays, mainly because of
limited aesthetic choices. One survey shows that more than 85% of architects believe that aesthetic
concerns increase photovoltaic (PV) system installations even with reduced conversion efficiencies [15].
Access to efficient PV modules with a variety of colors is highly desirable to further increase user
acceptance and the installation rate. Existing literatures [16–19] proposed several approaches for
fabricating colored Si-based PV modules, but these modules can only display a single color, and thus
give a dull appearance.
To overcome challenges of color presentation, we have developed artist PV modules, which are
colorful and semi-transparent. The key features of the modules are the provision of a color image
source by a back protective glass, and color visualization by using laser processes with a brightened
grayscale mask. In this paper, the structures of artist PV modules and the related laser scribing
mechanism are first described. Effects of the mask on solar cell conversion efficiency are investigated.
Furthermore, characteristics of a scaled, full-color a-Si/µc-Si tandem PV module are presented for
comparison with commercial Si-based thin-film BIPV products. Finally, practical applications and
installation details of the PV modules as curtain walls are discussed.

Energies 2016, 9, 551; doi:10.3390/en9070551 www.mdpi.com/journal/energies

Energies 2016, 9, 551 2 of 9

2. Experimental Methods

2.1. Fabrication of Artist Photovoltaic Modules

The schematic structure of artist PV modules is shown in Figure 1a. The module consists of a
PV submodule at the front and a protective glass at the back. The fabrication process was described
below. The submodule was series-connected by standards P1 to P3 laser processes [20]. Then a custom
image was ink-jet-printed on the back glass in full color, and printed on a transparent sticker with
adjustments, as shown in Figure 1b. The image was converted to grayscale (from A to A’) according to
the luminosity method formula [21]:

Gray “ 0.21R ` 0.71G ` 0.07B (1)

where R, G, and B are the intensities of the red, green, and blue colors of the pixel, respectively. The
percentage values indicated on the grayscale image were the transmittance Tm . Afterwards, the
brightness of the grayscale image was increased by 40% or above (from A’ to A”). The transparent
sticker with the brightened grayscale image was stuck on the glass side of the submodule as a mask for
the subsequent 532 nm laser process (herein denoted as P4 laser scribing), which scanned line-by-line
over the submodule. The spacing of the laser line was about 0.4 mm. It should be noted that if the mask
was only converted to grayscale but not brightened, many color pixels would change to heavy gray.
The resultant patterned image on the submodule would be also grayscale, but when it encapsulated
with the back glass, the full-color image on the latter could hardly be observable from the submodule
side. The brightening allowed the P4 laser to remove the regions on the submodule where the colors
need to be revealed, so the image could be seen from the both sides of the module. All the laser
processes were performed through the glass side of the submodule, and the detailed laser parameters
are summarized in Table 1. Finally, the scribed submodule was encapsulated with the back glass in
ethylene vinyl acetate (EVA) to finish the fabrication of the artist PV module. In addition, the ink on
the back glass was ultraviolet (UV)-resistant to inhibit fade and discoloration. The durability of the
inks was more than 10 years.

Brightened grayscale image

Front module
Transparent sticker

Glass
Silicon PV layers
EVA

Full-color image

Back protective glass

(a)

Figure 1. Cont.

91% 100%
81% 73% 100% 100%

55% 65% 82% 92%

A 43% A’ 49% 70% A’’ 77%

27% 39% 55% 66%

14% 28% 42% 56%
24% 51%

Image source Grayscale Brightened grayscale

(b)
 EVA

Full-color image

Back protective glass

(a)
Energies 2016, 9, 551 3 of 9

91% 100%
81% 73% 100% 100%

55% 65% 82% 92%

A 43% A’ 49% 70% A’’ 77%

27% 39% 55% 66%

14% 28% 42% 56%
24% 51%

Image source Grayscale Brightened grayscale

(b)

Figure 1. (a) The schematic structure of the full-color artist photovoltaic (PV) modules; and (b) a
comparison of the masks in our previous work (gray scale) and the present work (brightened gray
scale). The indicated percentage values are the gray transmittance of the corresponding pixels.
Figure 1

Table 1. Laser parameters used for P1, P2, P3 and P4 processes.

Parameter P1 P2 P3 P4
Wavelength (nm) 1064 532 532 532
Focal length (mm) 18 27 27 37
Power (W) 5 0.25 0.35 0.6
Line width (µm) 30 29.8 42 40
Velocity (mm/s) 350 400 325 400
Pulse frequency (Hz) 20 16 12 18

As the mask image might consist of various pixels with different Tm after being converted to
brightened grayscale, individual investigation for each pixel is essential to clarify their impacts on the
submodules. Five submodules (5 cm ˆ 5 cm) and masks with Tm = 20%, 40%, 60%, 80% and 100%
Energies 2016, 9, 551 3 of 8
were prepared. Mask transmittance was confirmed by UV-visible spectroscopy (Titan Electro-Optics
Co. were
Ltd., prepared.
Taipei, Taiwan) at a wavelength
Mask transmittance of 532 by
was confirmed nm with anspectroscopy
UV-visible error of less(Titan
thanElectro-Optics
5% as shown in
Figure
Co.2.Ltd.,
TheTaipei,
morphology
Taiwan) ofat athe submodules
wavelength of 532was
nm observed through
with an error of less scanning
than 5% aselectron
shown inmicroscope
Figure
(SEM)2. and
The optical
morphology of the submodules
microscope (OM) (M&T was observed
Optics Co. through scanning
Ltd., Taipei, electron
Taiwan). Themicroscope (SEM)of the
depth profiles
and optical microscope (OM) (M&T Optics Co. Ltd., Taipei, Taiwan).
scribes were obtained using an alpha profilometer (KTA Tencor, Milpitas, CA, USA). The laser The depth profiles of thescribe
scribes were obtained using an alpha profilometer (KTA Tencor, Milpitas, CA, USA). The laser
width was evaluated by the full-width at half maximum value of the scribe. The current-voltage (I-V)
scribe width was evaluated by the full-width at half maximum value of the scribe. The
characteristics of the modules were measured at AM1.5G (1000 W/m2 ) using a solar simulator. The
current-voltage (I-V) characteristics of the modules were measured at AM1.5G (1000 W/m2) using a
stabilized power output of the PV modules was determined by a standard light soaking
solar simulator. The stabilized power output of the PV modules was determined by a standard light
test according
to IEC 61646test
soaking at 60 ˝ C to
[22]according forIEC
1000 h. [22] at 60 °C for 1000 h.
61646

Figure 2. Transmittance spectra of the masks with Tm = 20%, 40%, 60%, 80%, and 100%.
Figure 2. Transmittance spectra of the masks with Tm = 20%, 40%, 60%, 80%, and 100%.

2.2. Mechenism of P4 Laser-Scribing Process for Image Patterning

The mechanism of P4 scribing is based on the laser energy intensity of the Gaussian distribution
[23] and Beer’s law [11]:

α e (2)
2π
 Figure 2. Transmittance spectra of the masks with Tm = 20%, 40%, 60%, 80%, and 100%.
Energies 2016, 9, 551 4 of 9
2.2. Mechenism of P4 Laser-Scribing Process for Image Patterning
The2.2.
mechanism ofP4P4Laser-Scribing
Mechenism of scribing isProcess
basedfor
onImage
the laser energy intensity of the Gaussian distribution
Patterning
[23] and Beer’s law [11]:
The mechanism of P4 scribing is based on the laser energy intensity of the Gaussian
distribution [23] and Beer’s law [11]:
α e x2 (2)
2π
P p´
2R0 2
q
I “ Tm α 2
e (2)
1 2πR0
ln ˙ , for (3)
´1α Ith
ˆ
d“ ln , for I ą Ith (3)
α I
where I is the laser energy intensity after passing the mask, α is the absorptivity, P is the laser
where I is the laser energy intensity after passing the mask, α is the absorptivity, P is the laser power,
power, R0 is the laser spot radius, x is the distance across scribes, Ith is the ablation threshold
R0 is the laser spot radius, x is the distance across scribes, Ith is the ablation threshold intensity of
intensitysilicon
of silicon films,
films, and d is and d is the
the scribe scribe
depth. depth. The
The grayscale maskgrayscale mask
will decrease laser will decrease
intensity laser
depending onintensity
depending on Tm, leading
Tm , thereby therebyto leading to various
various scribing scribing
depths, depths,
as schemed as schemed
in Figure in Figure
3. We applied 3. We
this concept to applied
this concept to pattern the image from the mask to the PV module.
pattern the image from the mask to the PV module.

Figure 3.Figure
Theoretical calculation
3. Theoretical results
calculation resultsofoflaser intensityand
laser intensity and ablation
ablation depth
depth distribution
distribution across the
across the
scribes for submodules
scribes withwith
for submodules andandwithout
withoutmask.
mask.

3. Results and Discussion

The OM and SEM topological images, as well as the depth profiles, of the scribes for mask
transmittances (Tm ) of 100%, 80%, 60%, 40%, and 20% are shown in Figure 4. The case of Tm = 100%
shows round laser spots (Figure 4a1,a2,b1,b2) and straight side walls on the scribes (Figure 4a3,b3).
This result indicates that laser intensity is not significantly affected by the mask. As Tm decreases, film
delamination and spot-size distortion occur at the edges of the scribes (Figure 4d1,d2,e1,e2). The shape
of the scribe changes from U to V as the depth and width decrease. Tm below 20% did not lead to film
ablation. This phenomenon can be explained by the fact that after passing the mask, the laser intensity
value was lower than the a-Si threshold ablation, typically 0.4 J/cm2 [24]. From these results, masks
with high Tm lead to fewer deviations from optimal laser conditions, thus having lower electrical
loss [23]. However, the use of high Tm masks results in the increased removal of films in the effective
area of the modules. These two factors are the trade-offs in determining the final device performance.
to film ablation. This phenomenon can be explained by the fact that after passing the mask, the laser
intensity value was lower than the a-Si threshold ablation, typically 0.4 J/cm2 [24]. From these results,
masks with high Tm lead to fewer deviations from optimal laser conditions, thus having lower
electrical loss [23]. However, the use of high Tm masks results in the increased removal of films in the
effective
Energies 2016,area
9, 551of the modules. These two factors are the trade-offs in determining the final 5 of 9
device performance.

Figure 4. The optical microscope (OM) (top) and scanning electron microscope (SEM) (middle)
Figure 4. The optical microscope (OM) (top) and scanning electron microscope (SEM) (middle) images,
images, and depth profiles (bottom) for Tm = 20%, 40%, 60%, 80% and 100% of a-Si PV modules.
and depth profiles (bottom) for Tm = 20%, 40%, 60%, 80% and 100% of a-Si PV modules.

The effects of the mask on the a-Si submodule performance such as short-circuit current density
The effects ofvoltage
(Jsc), open-circuit the mask (Vocon the factor
), fill a-Si submodule performance
(FF), and conversion such as short-circuit
efficiency (η) are shown current density
in Figure 5a.
(J
Thesc ), original
open-circuit voltage (V
submodule oc ), fill factor
(without the P4(FF), and conversion
process) efficiency
is also indicated as a(η)reference
are shown forincomparing
Figure 5a.
The
power original submodule
reduction values.(without
It can be the seenP4thatprocess) is also
Jsc almost indicated
remains as a reference
unchanged when for comparing
Tm increases power
from 0%
reduction values. It can be seen that J sc almost remains unchanged
to 20%, and decreases from 2.45 mA/cm to 2.1 mA/cm with the increase of Tm from 20% to 100%.
2 2 when T m increases from 0% to
20%, and decreases from 2.45 mA/cm 2 to 2.1 mA/cm2 with the increase of T from 20% to 100%. The
The reduction in Jsc is attributed to optical loss caused by the ablation of the active layers. Voc and FF m
reduction
show similar in Jsctrends.
is attributed to optical
Tm = 40% and 60%loss caused by thevalues
have lower ablation as of
a the active layers.
consequence V oc deteriorating
of the and FF show
similar
surface trends. Tm =resulting
states. The 40% and η60% valuehave is lower valuesfor
the lowest as Ta mconsequence of the deteriorating
= 100%. Therefore, surface
although grayscale
states. The resulting η value is the lowest for T m = 100%. Therefore,
design may lead to a reduction in Voc and FF, the module still has higher performance than T although grayscale design may
m =
lead to a reduction in V oc and FF, the module still has higher performance
100%. These results are still validated in the case of a-Si/µc-Si tandem solar cells (Figure 5b). It than T m = 100%. These
results
should are be still
noted validated in the case
that a module withof a-Si/µc-Si
Tm = 100%tandem can be solar cells (Figure
analogized to the5b).
10%It semi-transparent
should be noted
that a module with
module, while the artist T m = 100%
module is a combination of Tm = 0%–100%. The latter could while
can be analogized to the 10% semi-transparent module, the artist
be assumed to
module is a combination of T m = 0%–100%. The latter
have higher, or at least equal, performance than the 10% semi-transparent module. could be assumed to have higher, or at least
equal,A performance
fifth2016,
Energies
than the 10%
generation-sized
9, 551 (1.1semi-transparent
× 1.4 m2) artist module. a-Si/µc-Si PV module is fabricated, and 5 ofits
8 I-V
characteristics are compared to that of the opaque and 10% semi-transparent modules as shown in
Figure 6. Each of the PV modules was fabricated under identical laser conditions. The result matches
Figure 5, which confirms the expectation that the full-color module is more competitive than the 10%
semi-transparent PV module. A stable power output of 126 W (14.2% reduction) of the artist PV
module is achieved, while the 10% semi-transparent module shows a 123 W (16.3% reduction)
stabilized power output. We further increase the performance from 126 W to 139 W for the artist
module and 123–134 W for the 10% semi-transparent module when using a higher performance of
160 W of the opaque submodules (NexPower Tech. Corp., Taichung, Taiwan).

Figure 5. External parameters of (a) a-Si and (b) a-Si/µc-Si submodules with different Tm values.
Figure 5. External parameters of (a) a-Si and (b) a-Si/µc-Si submodules with different Tm values. The
The denoted reference is the submodule without the P4 laser process.
denoted reference is the submodule without the P4 laser process.
Energies 2016, 9, 551
Figure 5. External parameters of (a) a-Si and (b) a-Si/µc-Si submodules with different Tm values. 6 of 9
The denoted reference is the submodule without the P4 laser process.

Figure 6. Current-voltage (I-V) characteristics of opaque, 10% semi-transparent and artist a-Si/µc PV modules.
Figure 6. Current-voltage (I-V) characteristics of opaque, 10% semi-transparent and artist a-Si/µc
PV modules.
The 160 W opaque, 134 W 10% semi-transparent and 139 W artist PV modules were installed
with different orientations and tilt angles with respect to the ground in Changhua, Taiwan, for one
A fifth
year from generation-sized
2014. The modules (1.1 ˆ 1.4
were m2 ) outside
placed artist a-Si/µc-Si PV module
and connected with a is fabricated,
maximum power its I-V
andpoint
characteristics are that
tracking inverter compared
recordedto the
thatpower
of the opaque
output. Theand 10% semi-transparent
irradiance was measured bymodules an opticalaspower
shown
in meter.
FigureThe6. Each of the
weather PV modules
condition was fabricated
was changeable, but theunder identical laser
total irradiance conditions.
was about equal to The result
1299.4
peak sun
matches hours
Figure 5, (average 3.56 h/day).
which confirms Figure 7 shows
the expectation thatthe
theannual power
full-color generation
module is more forcompetitive
the three
modules;
than the 10% the capacity of each PV
semi-transparent module
module.is normalized to 1 kW.
A stable power In allofthe
output 126cases the annual
W (14.2% power of
reduction)
thegeneration
artist PV is the highest
module for the opaque
is achieved, while the PV 10%
module and the lowestmodule
semi-transparent for the 10%
showssemi-transparent
a 123 W (16.3%
module. stabilized
reduction) Despite having
powerthe same We
output. installation capacity,the
further increase theperformance
three types of modules
from 126 W have
to 139different
W for the
annual power generation due to different performance under variable illumination
artist module and 123–134 W for the 10% semi-transparent module when using a higher performance irradiances over
a day. Particularly for weak light illumination (≤200 W/m 2), the module performance depends on the
of 160 W of the opaque submodules (NexPower Tech. Corp., Taichung, Taiwan).
shunt
The resistance [25], which
160 W opaque, 134 W can
10%be calculated as the
semi-transparent inverse
and 139 Wslope
artistatPVthemodules
point ofwere
V = 0installed
in the I-V
with
curve. The calculated shunt resistances for the opaque, artist PV, and the 10% transmittance modules
different orientations and tilt angles with respect to the ground in Changhua, Taiwan, for one year
are 4139, 3468, and 3003 Ω, respectively. Compared to the 10% semi-transparent modules, artist PV
from 2014. The modules were placed outside and connected with a maximum power point tracking
inverter that recorded the power output. The irradiance was measured by an optical power meter. The
weather condition was changeable, but the total irradiance was about equal to 1299.4 peak sun hours
(average 3.56 h/day). Figure 7 shows the annual power generation for the three modules; the capacity
of each module is normalized to 1 kW. In all the cases the annual power generation is the highest
for the opaque PV module and the lowest for the 10% semi-transparent module. Despite having the
same installation capacity, the three types of modules have different annual power generation due to
different performance under variable illumination irradiances over a day. Particularly for weak light
illumination (ď200 W/m2 ), the module performance depends on the shunt resistance [25], which can
be calculated as the inverse slope at the point of V = 0 in the I-V curve. The calculated shunt resistances
for the opaque, artist PV, and the 10% transmittance modules are 4139, 3468, and 3003 Ω, respectively.
Compared to the 10% semi-transparent modules, artist PV modules have a smaller laser ablation area
and therefore higher shunt resistance. The non-tilted modules show a power generation of around
1354, 1288 and 1185 kW for opaque, artist PV, and 10% semi-transparent modules, respectively. The
23.5˝ -tilted modules show about 4%–5% reduction in power generation, except for the modules facing
south, showing even higher performance than non-tilted ones. This can be related to improvement in
plane-of-array irradiance. A significant reduction in power generation is observed for the 90˝ -tilted
modules. Power generations of 600–800 W, approximately half of that of 0˝ - and 23.5˝ -tilted modules,
are obtained.
 Energies 2016, 9, 551 6 of 8
modules show a power generation of around 1354, 1288 and 1185 kW for opaque, artist PV, and 10%
semi-transparent modules, respectively. The 23.5°-tilted modules show about 4%–5% reduction in
modules have a smaller laser ablation area and therefore higher shunt resistance. The non-tilted
power
modulesgeneration, exceptgeneration
show a power for the modules
of aroundfacing south,
1354, 1288 andshowing
1185 kW even higherartist
for opaque, performance than
PV, and 10%
non-tilted ones. This
semi-transparent can berespectively.
modules, related to The
improvement
23.5°-tilted in plane-of-array
modules irradiance.
show about A significant
4%–5% reduction in
reduction
Energies in
2016, 9, power
551 generation is observed for the 90°-tilted modules. Power
power generation, except for the modules facing south, showing even higher performance generations of 600–800
7 of 9
than
W,non-tilted
approximately half of that of 0°- and 23.5°-tilted modules, are obtained.
ones. This can be related to improvement in plane-of-array irradiance. A significant
reduction in power generation is observed for the 90°-tilted modules. Power generations of 600–800
W, approximately half of that of 0°- and 23.5°-tilted modules, are obtained.

Figure 7.
Figure 7. Annual
Annual power
power generation
generation of
of opaque,
opaque, 10%
10% semi-transparent
semi-transparent andand artist
artist PV
PV modules
modules installed
installed
with
with different
Figure
different tilt angles
7. Annual
tilt angles and
powerand orientations.
generation The PV
of opaque,
orientations. The PV
10%modules are installed
installed
semi-transparent
modules are andinin Changhua,
artist Taiwan.
PV modules
Changhua, installed
Taiwan.
with different tilt angles and orientations. The PV modules are installed in Changhua, Taiwan.
Figure 8 demonstrates the installation of the artist PV modules, wherein four modules are
Figure 8 demonstrates the installation of the artist PV modules, wherein four modules are
supported tightly
Figure by glass the
8 demonstrates fittings at the ofcorners
installation of PV
the artist each module.
modules, The modules
wherein are are
four modules tilted
supported tightly by glass fittings at the corners of each module. The modules are tilted approximately
supported tightly by glass fittings at the corners of each module. The modules
approximately 90° to the horizontal. This installation method has been widely used in traditional are tilted
90˝ to the horizontal. This installation method has been widely used in traditional glass curtain walls,
approximately
glass 90° and
curtain walls, to theis horizontal.
engineeredThis for installation
safety andmethod
strengthhas been widely
without usedofinmetal
the need traditional
frames
and is engineered
glass can
curtain
for safety
walls,
and strength without
and istoengineered
the need of metal frames (which can block the view)
(which block the view) offer visualfor safety and strength without the need of metal frames
beauty.
to (which
offer visual beauty.
can block the view) to offer visual beauty.

Figure
Figure
Figure 8. 8.
8. Annualpower
Annual
Annual powergeneration
power generationof
generation ofopaque,
of opaque, 10%
opaque, 10% semi-transparent
semi-transparentand
semi-transparent andartist
and artistPV
artist PV
PVmodules
modules
modulesinstalled
installed
installed
with different
with different
different tilttilt angles
tilt angles and
angles and orientations.
and orientations. The
orientations. The PV modules
The PV modules are
modules are installed
are installed in
installed inChanghua,
in Changhua,Taiwan.
Changhua, Taiwan.
Taiwan.
with

WeWe introducethis
introduce thismethod
method from
from the
the field
field of
of glass
glass to
to BIPV
BIPV technology
technologywhile
whilesolving
solvingcertain
certain
We introduce
problems this
described as method
follows. from the
Figure 9a field of
shows theglass
glass to BIPVinstalled
fittings technology
in while solving
traditional glassescertain
and
problems described as follows. Figure 9a shows the glass fittings installed in traditional glasses and
problems described as follows. Figure 9a shows the glass fittings installed in traditional glasses and
BIPV modules. The most cost-effective method for glass fittings is to drill holes from the back to
the front, and then to use screws (Figure 9b). However, this is not suitable for BIPV modules as the
holes drilled on the PV modules can deteriorate performances, and the holes expose the module
to a high risk of water leakage. Hence, we only drilled holes on the corners of the back glass, and
inserted alternative routels into the holes (Figure 9c). The back glass was then EVA-laminated with
 Energies 2016, 9, 551 7 of 8

BIPV modules. The most cost-effective method for glass fittings is to drill holes from the back to the
front, and then to use screws (Figure 9b). However, this is not suitable for BIPV modules as the holes
drilled
Energies 2016,on the PV modules can deteriorate performances, and the holes expose the module to a high
9, 551 8 of 9
risk of water leakage. Hence, we only drilled holes on the corners of the back glass, and inserted
alternative routels into the holes (Figure 9c). The back glass was then EVA-laminated with the PV
the modules.
PV modules. The The
EVAEVA
wouldwould penetrate
penetrate the the back
back glass
glass through
through thethe holes
holes to to
fixfixthe
theroutels
routelsafter
after
encapsulation. This method prevents module damage and water leakage. Finally, PV
encapsulation. This method prevents module damage and water leakage. Finally, PV curtain walls curtain walls
withwith
highhigh
aesthetic quality
aesthetic cancan
quality bebe
built.
built.

(a) (b) (c)

Figure 9. (a) Installation of artist PV modules with glass routels, and a comparison of the routels used
Figure 9. (a) Installation of artist PV modules with glass routels, and a comparison of the routels used
in (b) traditional glass; and (c) artist PV modules. EVA: ethylene vinyl acetate.
in (b) traditional glass; and (c) artist PV modules. EVA: ethylene vinyl acetate.
4. Conclusions
4. Conclusions
We have demonstrated a full-color, semi-transparent artist PV module using laser processes
We have
with demonstrated
a brightened a full-color,
grayscale mask thatsemi-transparent
precisely defines artist
the PV module
regions thatusing
needlaser
to beprocesses
removedwithor
a brightened grayscale
retained. This work canmask that precisely
be regarded as an defines
evolutiontheofregions that need
BIPV module to befrom
designs removed
plain andor retained.
simple
Thistowork can beaesthetic.
extremely regardedFurthermore,
as an evolution theof BIPV
high modulepower
retaining designs fromof
output plain
139 and simple
W makes thetofull-color
extremely
aesthetic.
moduleFurthermore, the high
more competitive retaining
than power output
other commercial of 139 W makesmodules.
semi-transparent the full-color
This module
technique more
is
competitive
expected than otherthe
to break commercial
stereotypesemi-transparent modules.
that solar cells are only forThis technique
power is expected
generation, and can to possibly
break the
elevate that
stereotype PV products into
solar cells areanonly
art form.
for power generation, and can possibly elevate PV products into an
art form.
Acknowledgments: This work is sponsored by the Ministry of Science and Technology of the Republic of China
under Contract Nos.
Acknowledgments: This104-2221-E-212-002-MY3 andMinistry
work is sponsored by the 104-2632-E-212-002.
of Science and Technology of the Republic of China
under Contract Nos. 104-2221-E-212-002-MY3 and 104-2632-E-212-002.
Conflicts of Interest: The authors declare no conflict of interest.
Conflicts of Interest: The authors declare no conflict of interest.
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