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N- Well
r 101 r 102
N - Well
r201 Minimum N+ and P+ diffusion width 4λ
r 201 P+ Diff
N - Well
r 201 N+ Diff
r202 Between two P+ and N+ diffusions 4λ
r 202
P+ Diff
N - Well
r 202
N+ Diff
r203 Extra N-well after P+ diffusion 6λ
r 203
P+ Diff
r 203
N - Well
N+ Diff
r204 Between N+ diffusion and n-well 6λ
P+ Diff
N - Well
r 204
N+ Diff
r210 Minimum diffusion area 16λ2
r 210 P+ Diff
N - Well
r 210 N+ Diff
r301 Polysilicon Width 2λ
Polysilicon
r 301
P+ Diff
N - Well
Polysilicon
r 301
N+ Diff
r302 Polysilicon gate on Diffusion 2λ
Polysilicon
r 302
P+ Diff
N - Well
Polysilicon
r 302
N+ Diff
r307 Extra Polysilicon surrounding Diffusion 3λ
Polysilicon
r 307
P+ Diff
r 307
N - Well
Polysilicon
r 307
N+ Diff
r 307
r304 Between two Polysilicon boxes 3λ
Polysilicon
r 304
P+ Diff
N - Well
Polysilicon
r 304
N+ Diff
r307 Diffusion after Polysilicon 4λ
Polysilicon
r 307 r 307
P+ Diff
N - Well
Polysilicon
r 307 r 307
N+ Diff
r401 Contact width 2λ
Contact
r 401
Polysilicon Contact
Metal/Polysilicon Contact
r404 Extra Poly surrounding contact 1λ
Contact
r 404 r 404
Polysilicon Contact
Metal/Polysilicon Contact
r405 Extra metal surrounding contact 1λ
Contact
Polysilicon Contact
Metal/Polysilicon Contact
r 405 r 405
r403 Extra diffusion surrounding contact 1λ
Polysilicon
r 403
P+ Diff
N - Well
Polysilicon
r 403
N+ Diff
r501 Between two Metals 4λ
Metal 1 Metal 4
r 501
Metal 2 Metal 5
r 501
Metal 3 Metal 6
r510 Minimum Metal area 16λ2
Metal 1 Metal 4
r 510 r 510
Metal 2 Metal 5
r 510 r 510
Metal 3 Metal 6
r 510 r 510
Step 1: Select Foundary
Step 2: Select Foundary
Step 3: n+ Diffussion
Step 4: Polysilicon
Step 5: n+diff and Metal Contact
• This Completes nMOS design