Vbg and mos current mirror sensitivity calculation:

2⋅ I
g m ( Q 3) = , where Vt=26mV at room temperature.
VT

VT ⋅ ln(24) 26mV ⋅ ln(24)

I= = = 2.75uA
R1 30k

I I I I
VT VT VT VT
g m(Q 4) = = = ≅ , so the ratio of Gm between Q3
1 + I ⋅ R1 2.75uA ⋅ 30k 1 + 3.17 4
VT 1 + 26mV
and Q4 is:

2I
g m ( Q 3) V
= T =8
g m(Q 4) 1 I
⋅
4 VT

A small voltage variation of Vbg will roughly equal to a small voltage variation on node
Vx, therefore the total current through R2 changes by:

∆VX ∆VBG
∆I R 2 = ≅ = ∆I C ( Q 3) + ∆I C ( Q 4) ,
R2 R2
Since Gm(Q3) is 8 times of Gm(Q4), so the 8/9 parts of the ∆I R 2 current flow through
Q3, and 1/9 parts of the ∆I R 2 current flow through Q4. The M9 to M10 is a 2:1 mirror,
therefore the output current is:
4 1 1 1 ∆V
∆I OUT = ( ∆I R 2 − ∆I R 2 ) = ∆I R 2 = ⋅ BG , So the trans-conductance of VBG to Iout
9 9 3 3 R2
is:
∆I 1
Gm (VBG ) = OUT =
∆VBG 3R2
The M10 PMOS device is running 2.75uA current and it’s 4 squares (W=L=8um, M=4),
so the current density is roughly 2.75/4=0.6875uA per square. For the typical 0.35um
technology this means that (Vgs-Vt)/2=75mV approximately, which means that the pmos
Gm is about 1/3 the Gm of a PNP running the same bias current. Also, remember that
V
I R 2 = 3I = 8.25uA = X , so, VX = 8.25uA × 63k = 519.75mV , the trans-conductance of
R2
M10 is:
 I 1 V 1 519.75mV 6.93 7
Gm ( M 10 ) = = ⋅ X = ⋅ = ≅ , so the ratio of
(Vgs − Vt ( pmos ) ) 3R2 75mV 3R2 75mV 3R2 3R2
2
the trans-conductance of M10 to VBG is as follows:
7
Gm ( M 10 ) 3R2
= =7
Gm (VBG ) 1
3R2
This means that 1mV mis-match of M9 and M10 mirror causes 7mV changes in VBG
voltage.

The typical Vt mismatch in the 0.35um technology is roughly 15mVum to 30mVum, so

the M10, M9 mirror mismatch is:

(15 ~ 30)mV ⋅ µm
∆Vt ( M 10,M 9) = = 1 ~ 2mV
8 × 8 × 4 µm

So, the Bandgap voltage will change by 7~14mV. This voltage should be considered in
the design of bandgap voltage trimming range. More important is that the Vt mismatch
will cause a T.C. in the bandgap voltage over temperature.
 VBGcore

M9 M10
W=8 W=8
L=8 L=8
M=8 M=4 Iout M10
W=8
L=1
2I I M=1

VBG

Q3 Q4

M=1 M=12

R1

V=30K

VX R3

R2

V=63K

GROUND

GND