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) MOS ALP Effect wrth Diagram 7 The eon tenden CMO Clops ty develop los -vertsbane ym bet ‘; o, pe 4 GND” camming cat askophic roettdow « The phenomeno 2 5 of Called lokehups ofcuny When parawtte pipolaw dane lie joel fie Gubstrate etl and Aippwo'n tin ON: with povless 7 la) Aung proper layont pradaderes ;lotvo prem conbe O° a he cause athe _Letchup eppect con be rd es boop by exam G Hee paocess cv Seckion aya Cmos Savery Overy Wh fs lard on eget cleo Ia aildition ee ae, expected nMmos and Pmes tocan telias tke Scheme depts * ie | Compased Ay am npa hands lon , A pnp-tranestor and top Cem sls Connected re i ZI (LEE Te tH e Vieb Sapetutety ve \ MopeL-or Cmm LATcHOP of 9 that fe Body ~Eppeck 2 Explein Pn DetaiL ' + Brody Egpec cepew te tke Change fa the Hiyceshod vollage pte deafte bihen Here Ie a DFpperence bekpecn Surstrste( body) and Corte vollaGes - ? Rudy Ofaw te vswally Ie fowaest V0 age fa Hee chip (fa Cour oy p-sebstok, Omer Name fr Body eppet fs Gack GATE EFFECT - To heduce the body eppect fy MAFET, We need ty Maintain THe Corte VOltoge- and body V0 lloge onthe fame level @ whet fe decahol voltage 2 On whet parameters f Depends ? dt Is a minimom vol age (Vas Gete Core) gequhred tw fom Proennion layer Conaanel) ta between SOusie ard dsafa ot vepfner Oparchion Tf MFET physferp param etery Pes Depends 09 > On functiog dip bemenn Gate ond Channel > The gete voltyge Corn ponent & Change Gonpawe potential > The gute voltage component to oppseti the Depletion region chosge > The voltage Omponent & tppset the pred Chonges 4n tecgete one fa see Plicon opPge. 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