PYL 726

Semiconductor Device Technology

(3-0-0)

Instructor: Prof. Rajendra Singh

Department of Physics

Lecture 29
PYL726: Semiconductor Device Technology
 Thermal oxidation of Silicon (03)
 Crystal Growth (04)
 Lithography: Optical and EBL (04)
 Thermal diffusion (02)
 Ion implantation, RTA (03) Unit Processes
 SOI technology (01)
 Metallization: Thermal, Electron beam and Sputtering (03)
 Deposition: PECVD, ALD, RF sputtering (03)
 Etching: Wet and dry etching (03)
 Growth: MOCVD, MBE, HVPE (03)
 CMP (01)
 Case studies: CMOS, LEDs, MEMS, Power devices (04)
 Chemical Mechanical Polishing/Planarization
Chemical Mechanical Polishing/Planarization is
commonly known as CMP. This is the process where the
top surface of a wafer is polished with a slurry containing
an abrasive grit, suspended within reactive chemical
agents.

The polishing action is partly mechanical and partly

chemical. The mechanical element of the process applies
downward pressure while the chemical reaction that takes
place increases the material removal rate. This is usually
tailored to suit the type of material being processed.
Chemical Mechanical Polishing/Planarization
Chemical Mechanical Polishing
Chemical Mechanical Polishing
Slurry in CMP
Slurry in CMP
 Slurry in CMP

(CeO2)
Polishing Pads for CMP
Polishing Pads for CMP
Polishing Pads for CMP
CMP machine
CMP machine
 Wafer Grinding
 In grinding, the removal amount is typically a few hundred microns (in
wafer thickness).
 Usually, back grinding is carried out in two steps: coarse grinding and
fine grinding. Coarse grinding employs a coarse grinding wheel with
larger diamond abrasives to remove majority of the total removal amount
required, as well as a faster feed rate to achieve higher throughput
 Usually, the damage induced by coarse grinding is too much and has to
be removed by a fine grinding step. For fine grinding, a slower feedrate
and a fine grinding wheel with smaller diamond abrasives are used to
remove a small amount of silicon (for example, from 10 to 30 μm)
Wafer Lapping