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Features
• Ultra-low-power with FlexPowerControl
– 1.71 V to 3.6 V power supply LQFP100 (14x14) UFBGA100 (7×7) WLCSP64 UFQFPN48 (7x7)
LQFP64 (10x10) UFBGA64 (5x5)
– -40 °C to 85/125 °C temperature range
– 145 nA in VBAT mode: supply for RTC and • Up to 83 fast I/Os, most 5 V-tolerant
32x32-bit backup registers • RTC with HW calendar, alarms and calibration
– 22 nA Shutdown mode (5 wakeup pins)
• Up to 21 capacitive sensing channels: support
– 106 nA Standby mode (5 wakeup pins) touchkey, linear and rotary touch sensors
– 375 nA Standby mode with RTC
• 12x timers: 1x 16-bit advanced motor-control,
– 2.05 µA Stop 2 mode, 2.40 µA with RTC 1x 32-bit and 3x 16-bit general purpose, 2x 16-
– 84 µA/MHz run mode (LDO Mode) bit basic, 2x low-power 16-bit timers (available
– 36 μA/MHz run mode (@3.3 V SMPS in Stop mode), 2x watchdogs, SysTick timer
Mode) • Memories
– Batch acquisition mode (BAM) – Up to 512 KB single bank Flash,
– 4 µs wakeup from Stop mode proprietary code readout protection
– Brown out reset (BOR) – 160 KB of SRAM including 32 KB with
– Interconnect matrix hardware parity check
• Core: ARM® 32-bit Cortex®-M4 CPU with FPU, – Quad SPI memory interface
Adaptive real-time accelerator (ART • Rich analog peripherals (independent supply)
Accelerator™) allowing 0-wait-state execution – 1× 12-bit ADC 5 Msps, up to 16-bit with
from Flash memory, frequency up to 80 MHz, hardware oversampling, 200 µA/Msps
MPU, 100DMIPS and DSP instructions
– 1x 12-bit DAC, low-power sample and hold
• Performance benchmark – 1x operational amplifier with built-in PGA
– 1.25 DMIPS/MHz (Drystone 2.1) – 2x ultra-low-power comparators
– 273.55 CoreMark® (3.42 CoreMark/MHz @ – Accurate 2.5 V or 2.048 V reference
80 MHz) voltage buffered output
• Energy benchmark • 17x communication interfaces
– 245 ULPBench® score – USB 2.0 full-speed crystal less solution
• Clock Sources with LPM and BCD
– 4 to 48 MHz crystal oscillator – 1x SAI (serial audio interface)
– 32 kHz crystal oscillator for RTC (LSE) – 4x I2C FM+(1 Mbit/s), SMBus/PMBus
– Internal 16 MHz factory-trimmed RC (±1%) – 3x USARTs (ISO 7816, LIN, IrDA, modem)
– Internal low-power 32 kHz RC (±5%) – 1x UART (LIN, IrDA, modem)
– Internal multispeed 100 kHz to 48 MHz – 1x LPUART
oscillator, auto-trimmed by LSE (better than – 3x SPIs (4x SPIs with the Quad SPI)
±0.25 % accuracy) – CAN (2.0B Active) and SDMMC interface
– Internal 48 MHz with clock recovery – IRTIM (Infrared interface)
– 2 PLLs for system clock, audio, ADC
Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.1 ARM® Cortex®-M4 core with FPU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.2 Adaptive real-time memory accelerator (ART Accelerator™) . . . . . . . . . 17
3.3 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.4 Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.5 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.6 Firewall . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.7 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.8 Cyclic redundancy check calculation unit (CRC) . . . . . . . . . . . . . . . . . . . 20
3.9 Power supply management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.9.1 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.9.2 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.9.3 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.9.4 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.9.5 Reset mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.9.6 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.10 Interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.11 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.12 General-purpose inputs/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.13 Direct memory access controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.14 Interrupts and events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.14.1 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 37
3.14.2 Extended interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . 37
3.15 Analog to digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.15.1 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.15.2 Internal voltage reference (VREFINT) . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.15.3 VBAT battery voltage monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.16 Digital to analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
5 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
6 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
List of tables
List of figures
1 Introduction
This datasheet provides the ordering information and mechanical device characteristics of
the STM32L452xx microcontrollers.
This document should be read in conjunction with the STM32L43xxx/44xxx/45xxx/46xxx
reference manual (RM0394). The reference manual is available from the
STMicroelectronics website www.st.com.
For information on the ARM® Cortex®-M4 core, please refer to the Cortex®-M4 Technical
Reference Manual, available from the www.arm.com website.
2 Description
The STM32L452xx devices are the ultra-low-power microcontrollers based on the high-
performance ARM® Cortex®-M4 32-bit RISC core operating at a frequency of up to 80 MHz.
The Cortex-M4 core features a Floating point unit (FPU) single precision which supports all
ARM single-precision data-processing instructions and data types. It also implements a full
set of DSP instructions and a memory protection unit (MPU) which enhances application
security.
The STM32L452xx devices embed high-speed memories (Flash memory up to 512 Kbyte,
160 Kbyte of SRAM), a Quad SPI flash memories interface (available on all packages) and
an extensive range of enhanced I/Os and peripherals connected to two APB buses, two
AHB buses and a 32-bit multi-AHB bus matrix.
The STM32L452xx devices embed several protection mechanisms for embedded Flash
memory and SRAM: readout protection, write protection, proprietary code readout
protection and Firewall.
The devices offer a fast 12-bit ADC (5 Msps), two comparators, one operational amplifier,
one DAC channel, an internal voltage reference buffer, a low-power RTC, one general-
purpose 32-bit timer, one 16-bit PWM timer dedicated to motor control, four general-purpose
16-bit timers, and two 16-bit low-power timers.
In addition, up to 21 capacitive sensing channels are available.
They also feature standard and advanced communication interfaces.
• Four I2Cs
• Three SPIs
• Three USARTs, one UART and one Low-Power UART.
• One SAI (Serial Audio Interfaces)
• One SDMMC
• One CAN
• One USB full-speed device crystal less
The STM32L452xx operates in the -40 to +85 °C (+105 °C junction) and -40 to +125 °C
(+130 °C junction) temperature ranges from a 1.71 to 3.6 V VDD power supply when using
internal LDO regulator and a 1.05 to 1.32V VDD12 power supply when using external SMPS
supply. A comprehensive set of power-saving modes allows the design of low-power
applications.
Some independent power supplies are supported: analog independent supply input for
ADC, DAC, OPAMP and comparators. A VBAT input allows to backup the RTC and backup
registers. Dedicated VDD12 power supplies can be used to bypass the internal LDO
regulator when connected to an external SMPS.
The STM32L452xx family offers six packages from 48 to 100-pin packages.
General 2 (16-bit)
purpose 1 (32-bit)
Basic 2 (16-bit)
Timers Low -power 2 (16-bit)
SysTick timer 1
Watchdog
timers
2
(independent,
window)
SPI 3
I2C 4
USART 3
UART 1
Comm. LPUART 1
interfaces
SAI 1
CAN 1
USB FS Yes
(1)
SDMMC Yes No
RTC Yes
Tamper pins 3 2 2
Random generator Yes
(2)
GPIOs 83 52 38
Wakeup pins 5 4(1) 3
Capacitive sensing
21 12 6
Number of channels
12-bit ADC 1 1 1
Number of channels 16 16(1) 10
12-bit DAC channels 1
Internal voltage reference
Yes No
buffer
Analog comparator 2
Operational amplifiers 1
Max. CPU frequency 80 MHz
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3 Functional overview
Table 3. Access status versus readout protection level and execution modes
Debug, boot from RAM or boot
User execution
Protection from system memory (loader)
Area
level
Read Write Erase Read Write Erase
• Write protection (WRP): the protected area is protected against erasing and
programming. Two areas can be selected, with 2-Kbyte granularity.
• Proprietary code readout protection (PCROP): a part of the flash memory can be
protected against read and write from third parties. The protected area is execute-only:
it can only be reached by the STM32 CPU, as an instruction code, while all other
accesses (DMA, debug and CPU data read, write and erase) are strictly prohibited.
The PCROP area granularity is 64-bit wide. An additional option bit (PCROP_RDP)
allows to select if the PCROP area is erased or not when the RDP protection is
changed from Level 1 to Level 0.
The whole non-volatile memory embeds the error correction code (ECC) feature supporting:
• single error detection and correction
• double error detection.
• The address of the ECC fail can be read in the ECC register
3.6 Firewall
The device embeds a Firewall which protects code sensitive and secure data from any
access performed by a code executed outside of the protected areas.
Each illegal access generates a reset which kills immediately the detected intrusion.
The Firewall main features are the following:
• Three segments can be protected and defined thanks to the Firewall registers:
– Code segment (located in Flash or SRAM1 if defined as executable protected
area)
– Non-volatile data segment (located in Flash)
– Volatile data segment (located in SRAM1)
• The start address and the length of each segments are configurable:
– code segment: up to 1024 Kbyte with granularity of 256 bytes
– Non-volatile data segment: up to 1024 Kbyte with granularity of 256 bytes
– Volatile data segment: up to 128 Kbyte with a granularity of 64 bytes
• Specific mechanism implemented to open the Firewall to get access to the protected
areas (call gate entry sequence)
• Volatile data segment can be shared or not with the non-protected code
• Volatile data segment can be executed or not depending on the Firewall configuration
The Flash readout protection must be set to level 2 in order to reach the expected level of
protection.
Note: If these supplies are tied to ground, the I/Os supplied by these power supplies are not 5 V
tolerant.
Note: VDDIOx is the I/Os general purpose digital functions supply. VDDIOx represents VDDIO1, with
VDDIO1 = VDD.
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MR range 1 94 µA/MHz
All
SMPS range 2 High 34 µA/MHz(4)
Run Yes ON(6) ON Any N/A N/A
MR range2 85 µA/MHz
All except USB_FS, RNG
SMPS range 2 Low 37 µA/MHz(5)
Any to Range 1: 4 µs
LPRun LPR Yes ON(6) ON except All except USB_FS, RNG N/A 95 µA/MHz
to Range 2: 64 µs
PLL
MR range 1 27 µA/MHz
All
SMPS range 2 High Any interrupt or 10 µA/MHz(4)
Sleep No ON(6) ON(7) Any 6 cycles
MR range2 event 27 µA/MHz
DocID029968 Rev 3
Functional overview
LPUART1(9)
I2Cx (x=1...4)(10)
I2Cx (x=1...4)(10)
LPTIMx (x=1,2)
MR Range 2(8) LPTIMx (x=1,2) 125 µA
***
USB_FS(11)
All other peripherals are
frozen.
23/210
Table 4. STM32L452xx modes overview (continued)
24/210
Functional overview
(1)
Mode Regulator CPU Flash SRAM Clocks DMA & Peripherals(2) Wakeup source Consumption(3) Wakeup time
STM32L452xx
Table 4. STM32L452xx modes overview (continued)
STM32L452xx
(1)
Mode Regulator CPU Flash SRAM Clocks DMA & Peripherals(2) Wakeup source Consumption(3) Wakeup time
Functional overview
11. USB_FS wakeup by resume from suspend and attach detection protocol event.
12. The I/Os with wakeup from Standby/Shutdown capability are: PA0, PC13, PE6, PA2, PC5.
13. I/Os can be configured with internal pull-up, pull-down or floating in Shutdown mode but the configuration is lost when exiting the Shutdown mode.
25/210
Functional overview STM32L452xx
By default, the microcontroller is in Run mode after a system or a power Reset. It is up to the
user to select one of the low-power modes described below:
• Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
• Low-power run mode
This mode is achieved with VCORE supplied by the low-power regulator to minimize the
regulator's operating current. The code can be executed from SRAM or from Flash,
and the CPU frequency is limited to 2 MHz. The peripherals with independent clock can
be clocked by HSI16.
• Low-power sleep mode
This mode is entered from the low-power run mode. Only the CPU clock is stopped.
When wakeup is triggered by an event or an interrupt, the system reverts to the low-
power run mode.
• Stop 0, Stop 1 and Stop 2 modes
Stop mode achieves the lowest power consumption while retaining the content of
SRAM and registers. All clocks in the VCORE domain are stopped, the PLL, the MSI
RC, the HSI16 RC and the HSE crystal oscillators are disabled. The LSE or LSI is still
running.
The RTC can remain active (Stop mode with RTC, Stop mode without RTC).
Some peripherals with wakeup capability can enable the HSI16 RC during Stop mode
to detect their wakeup condition.
Three Stop modes are available: Stop 0, Stop 1 and Stop 2 modes. In Stop 2 mode,
most of the VCORE domain is put in a lower leakage mode.
Stop 1 offers the largest number of active peripherals and wakeup sources, a smaller
wakeup time but a higher consumption than Stop 2. In Stop 0 mode, the main regulator
remains ON, allowing a very fast wakeup time but with much higher consumption.
The system clock when exiting from Stop 0, Stop1 or Stop2 modes can be either MSI
up to 48 MHz or HSI16, depending on software configuration.
• Standby mode
The Standby mode is used to achieve the lowest power consumption with BOR. The
internal regulator is switched off so that the VCORE domain is powered off. The PLL, the
MSI RC, the HSI16 RC and the HSE crystal oscillators are also switched off.
The RTC can remain active (Standby mode with RTC, Standby mode without RTC).
The brown-out reset (BOR) always remains active in Standby mode.
The state of each I/O during standby mode can be selected by software: I/O with
internal pull-up, internal pull-down or floating.
After entering Standby mode, SRAM1 and register contents are lost except for registers
in the Backup domain and Standby circuitry. Optionally, SRAM2 can be retained in
Standby mode, supplied by the low-power Regulator (Standby with SRAM2 retention
mode).
The device exits Standby mode when an external reset (NRST pin), an IWDG reset,
WKUP pin event (configurable rising or falling edge), or an RTC event occurs (alarm,
periodic wakeup, timestamp, tamper) or a failure is detected on LSE (CSS on LSE).
The system clock after wakeup is MSI up to 8 MHz.
• Shutdown mode
The Shutdown mode allows to achieve the lowest power consumption. The internal
regulator is switched off so that the VCORE domain is powered off. The PLL, the HSI16,
the MSI, the LSI and the HSE oscillators are also switched off.
The RTC can remain active (Shutdown mode with RTC, Shutdown mode without RTC).
The BOR is not available in Shutdown mode. No power voltage monitoring is possible
in this mode, therefore the switch to Backup domain is not supported.
SRAM1, SRAM2 and register contents are lost except for registers in the Backup
domain.
The device exits Shutdown mode when an external reset (NRST pin), a WKUP pin
event (configurable rising or falling edge), or an RTC event occurs (alarm, periodic
wakeup, timestamp, tamper).
The system clock after wakeup is MSI at 4 MHz.
Wakeup capability
Wakeup capability
Wakeup capability
Wakeup capability
Low- Low-
Peripheral Run Sleep power power VBAT
run sleep - - - -
CPU Y - Y - - - - - - - - - -
Flash memory (up to
O(2) O(2) O(2) O(2) - - - - - - - - -
512 KB)
SRAM1 (128 KB) Y Y(3) Y Y(3) Y - Y - - - - - -
SRAM2 (32 KB) Y Y(3) Y Y(3) Y - Y - O(4) - - - -
Quad SPI O O O O - - - - - - - - -
Backup Registers Y Y Y Y Y - Y - Y - Y - Y
Brown-out reset
Y Y Y Y Y Y Y Y Y Y - - -
(BOR)
Programmable
Voltage Detector O O O O O O O O - - - - -
(PVD)
Peripheral Voltage
Monitor (PVMx; O O O O O O O O - - - - -
x=1,3,4)
DMA O O O O - - - - - - - - -
High Speed Internal (5) (5)
O O O O - - - - - - -
(HSI16)
Oscillator RC48 O O - - - - - - - - - - -
High Speed External
O O O O - - - - - - - - -
(HSE)
Low Speed Internal
O O O O O - O - O - - - -
(LSI)
Low Speed External
O O O O O - O - O - O - O
(LSE)
Multi-Speed Internal
O O O O - - - - - - - - -
(MSI)
Clock Security
O O O O - - - - - - - - -
System (CSS)
Clock Security
O O O O O O O O O O - - -
System on LSE
RTC / Auto wakeup O O O O O O O O O O O O O
Number of RTC
3 3 3 3 3 O 3 O 3 O 3 O 3
Tamper pins
Wakeup capability
Wakeup capability
Wakeup capability
Wakeup capability
Low- Low-
Peripheral Run Sleep power power VBAT
run sleep - - - -
USARTx (x=1,2,3)
O O O O O(6) O(6) - - - - - - -
UART4
Low-power UART
O O O O O(6) O(6) O(6) O(6) - - - - -
(LPUART)
I2Cx (x=1,2,4) O O O O O(7) O(7) - - - - - - -
(7)
I2C3 O O O O O O(7) O(7) O(7) - - - - -
SPIx (x=1,2,3) O O O O - - - - - - - - -
CAN O O O O - - - - - - - - -
SDMMC1 O O O O - - - - - - - - -
SAIx (x=1) O O O O - - - - - - - - -
ADCx (x=1) O O O O - - - - - - - - -
DAC1 O O O O O - - - - - - - -
VREFBUF O O O O O - - - - - - - -
OPAMPx (x=1) O O O O O - - - - - - - -
COMPx (x=1,2) O O O O O O O O - - - - -
Temperature sensor O O O O - - - - - - - - -
Timers (TIMx) O O O O - - - - - - - - -
Low-power timer 1
O O O O O O O O - - - - -
(LPTIM1)
Low-power timer 2
O O O O O O - - - - - - -
(LPTIM2)
Independent
O O O O O O O O O O - - -
watchdog (IWDG)
Window watchdog
O O O O - - - - - - - - -
(WWDG)
SysTick timer O O O O - - - - - - - - -
Touch sensing
O O O O - - - - - - - - -
controller (TSC)
Random number
O(8) O(8) - - - - - - - - - - -
generator (RNG)
Wakeup capability
Wakeup capability
Wakeup capability
Wakeup capability
Low- Low-
Peripheral Run Sleep power power VBAT
run sleep - - - -
1. Legend: Y = Yes (Enable). O = Optional (Disable by default. Can be enabled by software). - = Not available.
2. The Flash can be configured in power-down mode. By default, it is not in power-down mode.
3. The SRAM clock can be gated on or off.
4. SRAM2 content is preserved when the bit RRS is set in PWR_CR3 register.
5. Some peripherals with wakeup from Stop capability can request HSI16 to be enabled. In this case, HSI16 is woken up by
the peripheral, and only feeds the peripheral which requested it. HSI16 is automatically put off when the peripheral does not
need it anymore.
6. UART and LPUART reception is functional in Stop mode, and generates a wakeup interrupt on Start, address match or
received frame event.
7. I2C address detection is functional in Stop mode, and generates a wakeup interrupt in case of address match.
8. Voltage scaling Range 1 only.
9. I/Os can be configured with internal pull-up, pull-down or floating in Standby mode.
10. The I/Os with wakeup from Standby/Shutdown capability are: PA0, PC13, PE6, PA2, PC5.
11. I/Os can be configured with internal pull-up, pull-down or floating in Shutdown mode but the configuration is lost when
exiting the Shutdown mode.
Low-power sleep
Low-power run
Stop 0 / Stop 1
Stop 2
Sleep
Interconnect
Run
Interconnect source Interconnect action
destination
ADCx
Conversion triggers Y Y Y Y - -
TIMx DACx
All clocks sources (internal TIM2 Clock source used as input channel for
Y Y Y Y - -
and external) TIM15, 16 RC measurement and trimming
CSS
CPU (hard fault)
RAM (parity error) TIM1
Timer break Y Y Y Y - -
Flash memory (ECC error) TIM15,16
COMPx
PVD
Low-power sleep
Low-power run
Stop 0 / Stop 1
Stop 2
Sleep
Interconnect
Run
Interconnect source Interconnect action
destination
1. LPTIM1 only.
interrupt is generated if enabled. LSE failure can also be detected and generated an
interrupt.
• Clock-out capability:
– MCO: microcontroller clock output: it outputs one of the internal clocks for
external use by the application
– LSCO: low speed clock output: it outputs LSI or LSE in all low-power modes
(except VBAT).
Several prescalers allow to configure the AHB frequency, the high speed APB (APB2) and
the low speed APB (APB1) domains. The maximum frequency of the AHB and the APB
domains is 80 MHz.
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The main features of the touch sensing controller are the following:
• Proven and robust surface charge transfer acquisition principle
• Supports up to 21 capacitive sensing channels
• Up to 3 capacitive sensing channels can be acquired in parallel offering a very good
response time
• Spread spectrum feature to improve system robustness in noisy environments
• Full hardware management of the charge transfer acquisition sequence
• Programmable charge transfer frequency
• Programmable sampling capacitor I/O pin
• Programmable channel I/O pin
• Programmable max count value to avoid long acquisition when a channel is faulty
• Dedicated end of acquisition and max count error flags with interrupt capability
• One sampling capacitor for up to 3 capacitive sensing channels to reduce the system
components
• Compatible with proximity, touchkey, linear and rotary touch sensor implementation
• Designed to operate with STMTouch touch sensing firmware library
Note: The number of capacitive sensing channels is dependent on the size of the packages and
subject to I/O availability.
hardware. DFSDM features optional parallel data stream inputs from microcontrollers
memory (through DMA/CPU transfers into DFSDM).
DFSDM transceivers support several serial interface formats (to support various Σ∆
modulators). DFSDM digital filter modules perform digital processing according user
selected filter parameters with up to 24-bit final ADC resolution.
The DFSDM peripheral supports:
• 4 multiplexed input digital serial channels:
– configurable SPI interface to connect various SD modulator(s)
– configurable Manchester coded 1 wire interface support
– PDM (Pulse Density Modulation) microphone input support
– maximum input clock frequency up to 20 MHz (10 MHz for Manchester coding)
– clock output for SD modulator(s): 0..20 MHz
• alternative inputs from 8 internal digital parallel channels (up to 16 bit input resolution):
– internal sources: device memory data streams (DMA)
• 2 digital filter modules with adjustable digital signal processing:
– Sincx filter: filter order/type (1..5), oversampling ratio (up to 1..1024)
– integrator: oversampling ratio (1..256)
• up to 24-bit output data resolution, signed output data format
• automatic data offset correction (offset stored in register by user)
• continuous or single conversion
• start-of-conversion triggered by:
– software trigger
– internal timers
– external events
– start-of-conversion synchronously with first digital filter module (DFSDM1_FLT0)
• analog watchdog feature:
– low value and high value data threshold registers
– dedicated configurable Sincx digital filter (order = 1..3, oversampling ratio = 1..32)
– input from final output data or from selected input digital serial channels
– continuous monitoring independently from standard conversion
• short circuit detector to detect saturated analog input values (bottom and top range):
– up to 8-bit counter to detect 1..256 consecutive 0’s or 1’s on serial data stream
– monitoring continuously each input serial channel
• break signal generation on analog watchdog event or on short circuit detector event
• extremes detector:
– storage of minimum and maximum values of final conversion data
– refreshed by software
• DMA capability to read the final conversion data
• interrupts: end of conversion, overrun, analog watchdog, short circuit, input serial
channel clock absence
• “regular” or “injected” conversions:
– “regular” conversions can be requested at any time or even in continuous mode
Number of channels 8
Number of filters 4
Input from internal ADC -
Supported trigger sources 10
Pulses skipper -
ID registers support -
Any integer
Advanced Up, down,
TIM1 16-bit between 1 Yes 4 3
control Up/down
and 65536
Any integer
General- Up, down,
TIM2 32-bit between 1 Yes 4 No
purpose Up/down
and 65536
Any integer
General- Up, down,
TIM3 16-bit between 1 Yes 4 No
purpose Up/down
and 65536
Any integer
General-
TIM15 16-bit Up between 1 Yes 2 1
purpose
and 65536
Any integer
General-
TIM16 16-bit Up between 1 Yes 1 1
purpose
and 65536
Any integer
Basic TIM6 16-bit Up between 1 Yes 0 No
and 65536
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Unless otherwise specified in brackets below the pin name, the pin function during and after
Pin name
reset is the same as the actual pin name
S Supply pin
Pin type I Input only pin
I/O Input / output pin
FT 5 V tolerant I/O
TT 3.6 V tolerant I/O
RST Bidirectional reset pin with embedded weak pull-up resistor
Notes Unless otherwise specified by a note, all I/Os are set as analog inputs during and after reset.
Alternate
Functions selected through GPIOx_AFR registers
Pin functions
functions Additional
Functions directly selected/enabled through peripheral registers
functions
1. The related I/O structures in Table 16 are: FT_f, FT_fa.
2. The related I/O structures in Table 16 are: FT_u, FT_fu.
3. The related I/O structures in Table 16 are: FT_a, FT_fa, TT_a.
I/O structure
(function
UFQFPN48
UFBGA100
WLCSP64
UFBGA64
after
LQFP100
reset)
Notes
TRACECK, TIM3_ETR,
TSC_G7_IO1,
- - - - - 1 B2 PE2 I/O FT - -
SAI1_MCLK_A,
EVENTOUT
TRACED0, TIM3_CH1,
- - - - - 2 A1 PE3 I/O FT - TSC_G7_IO2, -
SAI1_SD_B, EVENTOUT
TRACED1, TIM3_CH2,
DFSDM1_DATIN3,
- - - - - 3 B1 PE4 I/O FT - -
TSC_G7_IO3,
SAI1_FS_A, EVENTOUT
I/O structure
(function
UFQFPN48
UFBGA100
WLCSP64
UFBGA64
after
LQFP100
Alternate functions Additional functions
Pin type
LQFP64
reset)
Notes
TRACED2, TIM3_CH3,
DFSDM1_CKIN3,
- - - - - 4 C2 PE5 I/O FT - TSC_G7_IO4, -
SAI1_SCK_A,
EVENTOUT
TRACED3, TIM3_CH4,
- - - - - 5 D2 PE6 I/O FT - RTC_TAMP3/WKUP3
SAI1_SD_A, EVENTOUT
1 B7 1 1 B2 6 E2 VBAT S - - - -
(1)
RTC_TAMP1/RTC_TS/
2 B8 2 2 A2 7 C1 PC13 I/O FT (2) EVENTOUT
RTC_OUT/WKUP2
PC14-
(1)
OSC32_
3 C8 3 3 A1 8 D1 I/O FT (2) EVENTOUT OSC32_IN
IN
(PC14)
PC15-
(1)
OSC32_
4 C7 4 4 B1 9 E1 I/O FT (2) EVENTOUT OSC32_OUT
OUT
(PC15)
- - - - - 10 F2 VSS S - - - -
- - - - - 11 G2 VDD S - - - -
PH0-
5 D8 5 5 C1 12 F1 OSC_IN I/O FT - EVENTOUT OSC_IN
(PH0)
PH1-
OSC_
6 E8 6 6 D1 13 G1 I/O FT - EVENTOUT OSC_OUT
OUT
(PH1)
7 F8 7 7 E1 14 H2 NRST I/O RST - - -
LPTIM1_IN1, I2C4_SCL,
I2C3_SCL,
- D7 8 8 E3 15 H1 PC0 I/O FT_fa - LPUART1_RX, ADC1_IN1
LPTIM2_IN1,
EVENTOUT
TRACED0,
LPTIM1_OUT,
- D5 9 9 E2 16 J2 PC1 I/O FT_fa - I2C4_SDA, I2C3_SDA, ADC1_IN2
LPUART1_TX,
EVENTOUT
I/O structure
(function
UFQFPN48
UFBGA100
WLCSP64
UFBGA64
after
LQFP100
Alternate functions Additional functions
Pin type
LQFP64
reset)
Notes
LPTIM1_IN2,
SPI2_MISO,
- D6 10 10 F2 17 J3 PC2 I/O FT_a - ADC1_IN3
DFSDM1_CKOUT,
EVENTOUT
LPTIM1_ETR,
SPI2_MOSI, SAI1_SD_A,
- E7 11 11 G1 18 K2 PC3 I/O FT_a - ADC1_IN4
LPTIM2_ETR,
EVENTOUT
- - - - - 19 J1 VSSA S - - - -
- - - - - 20 K1 VREF- S - - - -
VSSA/
8 G8 12 12 F1 - - S - - - -
VREF-
- - - - - 21 L1 VREF+ S - - - VREFBUF_OUT
- - - - - 22 M1 VDDA S - - - -
VDDA/
9 F7 13 13 H1 - - S - - - -
VREF+
TIM2_CH1,
USART2_CTS, OPAMP1_VINP,
UART4_TX, COMP1_INM,
10 H8 14 14 G2 23 L2 PA0 I/O FT_a -
COMP1_OUT, ADC1_IN5,
SAI1_EXTCLK, RTC_TAMP2/WKUP1
TIM2_ETR, EVENTOUT
TIM2_CH2, I2C1_SMBA,
SPI1_SCK,
OPAMP1_VINM,
USART2_RTS_DE,
11 E6 15 15 H2 24 M2 PA1 I/O FT_a (3) COMP1_INP,
UART4_RX,
ADC1_IN6
TIM15_CH1N,
EVENTOUT
TIM2_CH3, USART2_TX,
LPUART1_TX, COMP2_INM,
12 G7 16 16 F3 25 K3 PA2 I/O FT_a - QUADSPI_BK1_NCS, ADC1_IN7,
COMP2_OUT, WKUP4/LSCO
TIM15_CH1, EVENTOUT
TIM2_CH4, USART2_RX,
LPUART1_RX, OPAMP1_VOUT,
13 F6 17 17 G3 26 L3 PA3 I/O TT_a - QUADSPI_CLK, COMP2_INP,
SAI1_MCLK_A, ADC1_IN8
TIM15_CH2, EVENTOUT
- - 18 18 C2 27 E3 VSS S - - - -
- H7 19 19 D2 28 H3 VDD S - - - -
I/O structure
(function
UFQFPN48
UFBGA100
WLCSP64
UFBGA64
after
LQFP100
Alternate functions Additional functions
Pin type
LQFP64
reset)
Notes
SPI1_NSS, SPI3_NSS,
COMP1_INM,
USART2_CK,
COMP2_INM,
14 G6 20 20 H3 29 M3 PA4 I/O TT_a - SAI1_FS_B,
ADC1_IN9,
LPTIM2_OUT,
DAC1_OUT1
EVENTOUT
TIM2_CH1, TIM2_ETR,
SPI1_SCK, COMP1_INM,
15 F5 21 21 F4 30 K4 PA5 I/O TT_a - DFSDM1_CKOUT, COMP2_INM,
LPTIM2_ETR, ADC1_IN10
EVENTOUT
TIM1_BKIN, TIM3_CH1,
SPI1_MISO,
COMP1_OUT,
USART3_CTS,
16 H6 22 22 G4 31 L4 PA6 I/O FT_a - ADC1_IN11
LPUART1_CTS,
QUADSPI_BK1_IO3,
TIM1_BKIN_COMP2,
TIM16_CH1, EVENTOUT
TIM1_CH1N, TIM3_CH2,
I2C3_SCL, SPI1_MOSI,
DFSDM1_DATIN0,
17 E5 23 23 H4 32 M4 PA7 I/O FT_fa (3) ADC1_IN12
QUADSPI_BK1_IO2,
COMP2_OUT,
EVENTOUT
USART3_TX, COMP1_INM,
- E4 24 24 H5 33 K5 PC4 I/O FT_a -
EVENTOUT ADC1_IN13
USART3_RX, COMP1_INP,
- G5 25 - H6 34 L5 PC5 I/O FT_a -
EVENTOUT ADC1_IN14, WKUP5
TIM1_CH2N, TIM3_CH3,
SPI1_NSS,
DFSDM1_CKIN0,
USART3_CK,
18 H5 26 25 F5 35 M5 PB0 I/O FT_a - ADC1_IN15
QUADSPI_BK1_IO1,
COMP1_OUT,
SAI1_EXTCLK,
EVENTOUT
TIM1_CH3N, TIM3_CH4,
DFSDM1_DATIN0,
USART3_RTS_DE,
COMP1_INM,
19 F4 27 26 G5 36 M6 PB1 I/O FT_a - LPUART1_RTS_DE,
ADC1_IN16
QUADSPI_BK1_IO0,
LPTIM2_IN1,
EVENTOUT
I/O structure
(function
UFQFPN48
UFBGA100
WLCSP64
UFBGA64
after
LQFP100
Alternate functions Additional functions
Pin type
LQFP64
reset)
Notes
RTC_OUT, LPTIM1_OUT,
I2C3_SMBA,
20 G4 28 27 G6 37 L6 PB2 I/O FT_a - COMP1_INP
DFSDM1_CKIN0,
EVENTOUT
TIM1_ETR,
- - - - - 38 M7 PE7 I/O FT - DFSDM1_DATIN2, -
SAI1_SD_B, EVENTOUT
TIM1_CH1N,
DFSDM1_CKIN2,
- - - - - 39 L7 PE8 I/O FT - -
SAI1_SCK_B,
EVENTOUT
TIM1_CH1,
- - - - - 40 M8 PE9 I/O FT - DFSDM1_CKOUT, -
SAI1_FS_B, EVENTOUT
TIM1_CH2N,
TSC_G5_IO1,
- - - - - 41 L8 PE10 I/O FT - QUADSPI_CLK, -
SAI1_MCLK_B,
EVENTOUT
TIM1_CH2,
TSC_G5_IO2,
- - - - - 42 M9 PE11 I/O FT - -
QUADSPI_BK1_NCS,
EVENTOUT
TIM1_CH3N, SPI1_NSS,
TSC_G5_IO3,
- - - - - 43 L9 PE12 I/O FT - -
QUADSPI_BK1_IO0,
EVENTOUT
TIM1_CH3, SPI1_SCK,
TSC_G5_IO4,
- - - - - 44 M10 PE13 I/O FT - -
QUADSPI_BK1_IO1,
EVENTOUT
TIM1_CH4, TIM1_BKIN2,
TIM1_BKIN2_COMP2,
- - - - - 45 M11 PE14 I/O FT - SPI1_MISO, -
QUADSPI_BK1_IO2,
EVENTOUT
TIM1_BKIN,
TIM1_BKIN_COMP1,
- - - - - 46 M12 PE15 I/O FT - SPI1_MOSI, -
QUADSPI_BK1_IO3,
EVENTOUT
I/O structure
(function
UFQFPN48
UFBGA100
WLCSP64
UFBGA64
after
LQFP100
Alternate functions Additional functions
Pin type
LQFP64
reset)
Notes
TIM2_CH3, I2C4_SCL,
I2C2_SCL, SPI2_SCK,
USART3_TX,
LPUART1_RX,
21 H4 29 28 G7 47 L10 PB10 I/O FT_f - TSC_SYNC, -
QUADSPI_CLK,
COMP1_OUT,
SAI1_SCK_A,
EVENTOUT
TIM2_CH4, I2C4_SDA,
I2C2_SDA, USART3_RX,
LPUART1_TX,
22 H3 30 29 H7 48 L11 PB11 I/O FT_f - -
QUADSPI_BK1_NCS,
COMP2_OUT,
EVENTOUT
- - - 30 - - - VDD12 S - - - -
23 H2 31 31 D6 49 F12 VSS S - - - -
24 H1 32 32 E6 50 G12 VDD S - - - -
TIM1_BKIN,
TIM1_BKIN_COMP2,
I2C2_SMBA, SPI2_NSS,
DFSDM1_DATIN1,
USART3_CK,
25 G3 33 33 H8 51 L12 PB12 I/O FT - -
LPUART1_RTS_DE,
TSC_G1_IO1, CAN1_RX,
SAI1_FS_A,
TIM15_BKIN,
EVENTOUT
TIM1_CH1N, I2C2_SCL,
SPI2_SCK,
DFSDM1_CKIN1,
USART3_CTS,
26 G2 34 34 G8 52 K12 PB13 I/O FT_f - LPUART1_CTS, -
TSC_G1_IO2, CAN1_TX,
SAI1_SCK_A,
TIM15_CH1N,
EVENTOUT
TIM1_CH2N, I2C2_SDA,
SPI2_MISO,
DFSDM1_DATIN2,
27 G1 35 35 F8 53 K11 PB14 I/O FT_f - USART3_RTS_DE, -
TSC_G1_IO3,
SAI1_MCLK_A,
TIM15_CH1, EVENTOUT
I/O structure
(function
UFQFPN48
UFBGA100
WLCSP64
UFBGA64
after
LQFP100
Alternate functions Additional functions
Pin type
LQFP64
reset)
Notes
RTC_REFIN,
TIM1_CH3N,
SPI2_MOSI,
28 F1 36 36 F7 54 K10 PB15 I/O FT - DFSDM1_CKIN2, -
TSC_G1_IO4,
SAI1_SD_A,
TIM15_CH2, EVENTOUT
USART3_TX,
- - - - - 55 K9 PD8 I/O FT - -
EVENTOUT
USART3_RX,
- - - - - 56 K8 PD9 I/O FT - -
EVENTOUT
USART3_CK,
- - - - - 57 J12 PD10 I/O FT - TSC_G6_IO1, -
EVENTOUT
I2C4_SMBA,
USART3_CTS,
- - - - - 58 J11 PD11 I/O FT - TSC_G6_IO2, -
LPTIM2_ETR,
EVENTOUT
I2C4_SCL,
USART3_RTS_DE,
- - - - - 59 J10 PD12 I/O FT - TSC_G6_IO3, -
LPTIM2_IN1,
EVENTOUT
I2C4_SDA,
TSC_G6_IO4,
- - - - - 60 H12 PD13 I/O FT - -
LPTIM2_OUT,
EVENTOUT
- - - - - 61 H11 PD14 I/O FT - EVENTOUT -
- - - - - 62 H10 PD15 I/O FT - EVENTOUT -
TIM3_CH1,
DFSDM1_CKIN3,
- F2 37 37 F6 63 E12 PC6 I/O FT - TSC_G4_IO1, -
SDMMC1_D6,
EVENTOUT
TIM3_CH2,
DFSDM1_DATIN3,
- E1 38 38 E7 64 E11 PC7 I/O FT - TSC_G4_IO2, -
SDMMC1_D7,
EVENTOUT
I/O structure
(function
UFQFPN48
UFBGA100
WLCSP64
UFBGA64
after
LQFP100
Alternate functions Additional functions
Pin type
LQFP64
reset)
Notes
TIM3_CH3,
TSC_G4_IO3,
- F3 39 39 E8 65 E10 PC8 I/O FT - -
SDMMC1_D0,
EVENTOUT
TIM3_CH4,
TSC_G4_IO4,
- E2 40 40 D8 66 D12 PC9 I/O FT - USB_NOE, -
SDMMC1_D1,
EVENTOUT
MCO, TIM1_CH1,
DFSDM1_CKIN1,
USART1_CK,
29 E3 41 41 D7 67 D11 PA8 I/O FT - -
SAI1_SCK_A,
LPTIM2_OUT,
EVENTOUT
TIM1_CH2, I2C1_SCL,
DFSDM1_DATIN1,
USART1_TX,
30 D1 42 42 C7 68 D10 PA9 I/O FT_f - -
SAI1_FS_A,
TIM15_BKIN,
EVENTOUT
TIM1_CH3, I2C1_SDA,
USART1_RX,
31 C1 43 43 C6 69 C12 PA10 I/O FT_f - -
USB_CRS_SYNC,
SAI1_SD_A, EVENTOUT
TIM1_CH4, TIM1_BKIN2,
SPI1_MISO,
COMP1_OUT,
32 D2 44 44 C8 70 B12 PA11 I/O FT_u - USART1_CTS, -
CAN1_RX, USB_DM,
TIM1_BKIN2_COMP1,
EVENTOUT
TIM1_ETR, SPI1_MOSI,
USART1_RTS_DE,
33 D3 45 45 B8 71 A12 PA12 I/O FT_u - -
CAN1_TX, USB_DP,
EVENTOUT
PA13 JTMS/SWDAT, IR_OUT,
(4)
34 C2 46 46 A8 72 A11 (JTMS/ I/O FT USB_NOE, SAI1_SD_B, -
SWDIO) EVENTOUT
35 B1 47 47 D5 - - VSS S - - - -
36 A1 48 48 E5 73 C11 VDDUSB S - - - -
- - - - - 74 F11 VSS S - - - -
I/O structure
(function
UFQFPN48
UFBGA100
WLCSP64
UFBGA64
after
LQFP100
Alternate functions Additional functions
Pin type
LQFP64
reset)
Notes
- B2 - - - 75 G11 VDD S - - - -
JTCK/SWCLK,
PA14 LPTIM1_OUT,
37 C3 49 49 A7 76 A10 (JTCK/ I/O FT (4)
I2C1_SMBA, -
SWCLK) I2C4_SMBA,
SAI1_FS_B, EVENTOUT
JTDI, TIM2_CH1,
TIM2_ETR, USART2_RX,
SPI1_NSS, SPI3_NSS,
PA15 (4)
38 A2 50 50 A6 77 A9 I/O FT USART3_RTS_DE, -
(JTDI)
UART4_RTS_DE,
TSC_G3_IO1,
EVENTOUT
TRACED1, SPI3_SCK,
USART3_TX,
UART4_TX,
- D4 51 51 B7 78 B11 PC10 I/O FT - -
TSC_G3_IO2,
SDMMC1_D2,
EVENTOUT
SPI3_MISO,
USART3_RX,
UART4_RX,
- B3 52 52 B6 79 C10 PC11 I/O FT - -
TSC_G3_IO3,
SDMMC1_D3,
EVENTOUT
TRACED3, SPI3_MOSI,
USART3_CK,
- A3 53 53 C5 80 B10 PC12 I/O FT - TSC_G3_IO4, -
SDMMC1_CK,
EVENTOUT
SPI2_NSS, CAN1_RX,
- - - - - 81 C9 PD0 I/O FT - -
EVENTOUT
SPI2_SCK, CAN1_TX,
- - - - - 82 B9 PD1 I/O FT - -
EVENTOUT
TRACED2, TIM3_ETR,
USART3_RTS_DE,
- C4 54 - B5 83 C8 PD2 I/O FT - TSC_SYNC, -
SDMMC1_CMD,
EVENTOUT
I/O structure
(function
UFQFPN48
UFBGA100
WLCSP64
UFBGA64
after
LQFP100
Alternate functions Additional functions
Pin type
LQFP64
reset)
Notes
SPI2_MISO,
DFSDM1_DATIN0,
- - - - - 84 B8 PD3 I/O FT - USART2_CTS, -
QUADSPI_BK2_NCS,
EVENTOUT
SPI2_MOSI,
DFSDM1_CKIN0,
- - - - - 85 B7 PD4 I/O FT - USART2_RTS_DE, -
QUADSPI_BK2_IO0,
EVENTOUT
USART2_TX,
- - - - - 86 A6 PD5 I/O FT - QUADSPI_BK2_IO1, -
EVENTOUT
DFSDM1_DATIN1,
USART2_RX,
- - - - - 87 B6 PD6 I/O FT - -
QUADSPI_BK2_IO2,
SAI1_SD_A, EVENTOUT
DFSDM1_CKIN1,
USART2_CK,
- - - - - 88 A5 PD7 I/O FT - -
QUADSPI_BK2_IO3,
EVENTOUT
JTDO/TRACESWO,
PB3 TIM2_CH2, SPI1_SCK,
(JTDO/ SPI3_SCK,
39 B4 55 54 A5 89 A8 I/O FT_a (4) COMP2_INM
TRACE USART1_RTS_DE,
SWO) SAI1_SCK_B,
EVENTOUT
NJTRST, TIM3_CH1,
I2C3_SDA, SPI1_MISO,
SPI3_MISO,
PB4
40 A4 56 55 A4 90 A7 I/O FT_fa (4) USART1_CTS, COMP2_INP
(NJTRST)
TSC_G2_IO1,
SAI1_MCLK_B,
EVENTOUT
LPTIM1_IN1, TIM3_CH2,
CAN1_RX, I2C1_SMBA,
SPI1_MOSI, SPI3_MOSI,
USART1_CK,
41 C5 57 56 C4 91 C5 PB5 I/O FT - TSC_G2_IO2, -
COMP2_OUT,
SAI1_SD_B,
TIM16_BKIN,
EVENTOUT
I/O structure
(function
UFQFPN48
UFBGA100
WLCSP64
UFBGA64
after
LQFP100
Alternate functions Additional functions
Pin type
LQFP64
reset)
Notes
LPTIM1_ETR, I2C1_SCL,
I2C4_SCL, USART1_TX,
CAN1_TX, TSC_G2_IO3,
42 B5 58 57 D3 92 B5 PB6 I/O FT_fa - COMP2_INP
SAI1_FS_B,
TIM16_CH1N,
EVENTOUT
LPTIM1_IN2, I2C1_SDA,
I2C4_SDA, USART1_RX,
43 A5 59 58 C3 93 B4 PB7 I/O FT_fa - UART4_CTS, COMP2_INM, PVD_IN
TSC_G2_IO4,
EVENTOUT
PH3-
44 B6 60 59 B4 94 A4 BOOT0 I/O FT - EVENTOUT -
(BOOT0)
I2C1_SCL, CAN1_RX,
SDMMC1_D4,
45 A6 61 60 B3 95 A3 PB8 I/O FT_f - -
SAI1_MCLK_A,
TIM16_CH1, EVENTOUT
IR_OUT, I2C1_SDA,
SPI2_NSS, CAN1_TX,
46 C6 62 61 A3 96 B3 PB9 I/O FT_f - -
SDMMC1_D5,
SAI1_FS_A, EVENTOUT
- - - 62 - - - VDD12 S - - - -
- - - - - 97 C3 PE0 I/O FT - TIM16_CH1, EVENTOUT -
- - - - - 98 A2 PE1 I/O FT - EVENTOUT -
47 A7 63 63 D4 99 D3 VSS S - - - -
48 A8 64 64 E4 100 C4 VDD S - - - -
1. PC13, PC14 and PC15 are supplied through the power switch. Since the switch only sinks a limited amount of current
(3 mA), the use of GPIOs PC13 to PC15 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF
- These GPIOs must not be used as current sources (e.g. to drive an LED).
2. After a Backup domain power-up, PC13, PC14 and PC15 operate as GPIOs. Their function then depends on the content of
the RTC registers which are not reset by the system reset. For details on how to manage these GPIOs, refer to the Backup
domain and RTC register descriptions in the RM0394 reference manual.
3. OPAMPx_VINM pins are not available as additional functions on pins PA1 and PA7 on UFBGA packages. On UFBGA
packages, use the OPAMPx_VINM dedicated pins available on M3 and M4 balls.
4. After reset, these pins are configured as JTAG/SW debug alternate functions, and the internal pull-up on PA15, PA13, PB4
pins and the internal pull-down on PA14 pin are activated.
Port USART1/
TIM1/TIM2 I2C4/TIM1/ I2C4/USART2/ I2C1/I2C2/ SPI3/DFSDM/
SYS_AF SPI1/SPI2/I2C4 USART2/
LPTIM1 TIM2/TIM3 CAN1/TIM1 I2C3/I2C4 COMP1
USART3
CKOUT
PA6 - TIM1_BKIN TIM3_CH1 - - SPI1_MISO COMP1_OUT USART3_CTS
DFSDM1_
PA7 - TIM1_CH1N TIM3_CH2 - I2C3_SCL SPI1_MOSI -
DATIN0
Port A DFSDM1_
PA8 MCO TIM1_CH1 - - - - USART1_CK
CKIN1
DFSDM1_
PA9 - TIM1_CH2 - - I2C1_SCL - USART1_TX
DATIN1
PA10 - TIM1_CH3 - - I2C1_SDA - - USART1_RX
Port USART1/
TIM1/TIM2 I2C4/TIM1/ I2C4/USART2/ I2C1/I2C2/ SPI3/DFSDM/
SYS_AF SPI1/SPI2/I2C4 USART2/
LPTIM1 TIM2/TIM3 CAN1/TIM1 I2C3/I2C4 COMP1
USART3
DFSDM1_
PB0 - TIM1_CH2N TIM3_CH3 - - SPI1_NSS USART3_CK
CKIN0
DFSDM1_ USART3_RTS_
PB1 - TIM1_CH3N TIM3_CH4 - - -
DATIN0 DE
DFSDM1_
PB2 RTC_OUT LPTIM1_OUT - - I2C3_SMBA - -
CKIN0
JTDO/ USART1_RTS_
PB3 TIM2_CH2 - - - SPI1_SCK SPI3_SCK
TRACESWO DE
PB4 NJTRST - TIM3_CH1 - I2C3_SDA SPI1_MISO SPI3_MISO USART1_CTS
DocID029968 Rev 3
STM32L452xx
DFSDM1_
PB15 RTC_REFIN TIM1_CH3N - - - SPI2_MOSI -
CKIN2
Table 17. Alternate function AF0 to AF7 (for AF8 to AF15 see Table 18) (continued)
STM32L452xx
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7
Port USART1/
TIM1/TIM2 I2C4/TIM1/ I2C4/USART2/ I2C1/I2C2/ SPI3/DFSDM/
SYS_AF SPI1/SPI2/I2C4 USART2/
LPTIM1 TIM2/TIM3 CAN1/TIM1 I2C3/I2C4 COMP1
USART3
DFSDM1_
PC6 - - TIM3_CH1 - - - -
CKIN3
Port C DFSDM1_
PC7 - - TIM3_CH2 - - - -
DATIN3
PC8 - - TIM3_CH3 - - - - -
PC9 - - TIM3_CH4 - - - - -
PC10 TRACED1 - - - - - SPI3_SCK USART3_TX
PC11 - - - - - - SPI3_MISO USART3_RX
PC12 TRACED3 - - - - - SPI3_MOSI USART3_CK
Port USART1/
TIM1/TIM2 I2C4/TIM1/ I2C4/USART2/ I2C1/I2C2/ SPI3/DFSDM/
SYS_AF SPI1/SPI2/I2C4 USART2/
LPTIM1 TIM2/TIM3 CAN1/TIM1 I2C3/I2C4 COMP1
USART3
PD0 - - - - - SPI2_NSS - -
PD1 - - - - - SPI2_SCK - -
USART3_RTS_
PD2 TRACED2 - TIM3_ETR - - - -
DE
DFSDM1_
PD3 - - - - - SPI2_MISO USART2_CTS
DATIN0
DFSDM1_ USART2_RTS_
PD4 - - - - - SPI2_MOSI
CKIN0 DE
DocID029968 Rev 3
PD5 - - - - - - - USART2_TX
DFSDM1_
PD6 - - - - - - USART2_RX
DATIN1
Port D DFSDM1_
PD7 - - - - - - USART2_CK
CKIN1
PD8 - - - - - - - USART3_TX
PD9 - - - - - - - USART3_RX
PD10 - - - - - - - USART3_CK
PD11 - - - - I2C4_SMBA - - USART3_CTS
USART3_RTS_
PD12 - - - - I2C4_SCL - -
DE
PD13 - - - - I2C4_SDA - - -
PD14 - - - - - - - -
STM32L452xx
PD15 - - - - - - - -
Table 17. Alternate function AF0 to AF7 (for AF8 to AF15 see Table 18) (continued)
STM32L452xx
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7
Port USART1/
TIM1/TIM2 I2C4/TIM1/ I2C4/USART2/ I2C1/I2C2/ SPI3/DFSDM/
SYS_AF SPI1/SPI2/I2C4 USART2/
LPTIM1 TIM2/TIM3 CAN1/TIM1 I2C3/I2C4 COMP1
USART3
PE0 - - - - - - - -
PE1 - - - - - - - -
PE2 TRACECK - TIM3_ETR - - - - -
PE3 TRACED0 - TIM3_CH1 - - - - -
DFSDM1_
PE4 TRACED1 - TIM3_CH2 - - - -
DATIN3
DFSDM1_
PE5 TRACED2 - TIM3_CH3 - - - -
CKIN3
DocID029968 Rev 3
Port USART1/
TIM1/TIM2 I2C4/TIM1/ I2C4/USART2/ I2C1/I2C2/ SPI3/DFSDM/
SYS_AF SPI1/SPI2/I2C4 USART2/
LPTIM1 TIM2/TIM3 CAN1/TIM1 I2C3/I2C4 COMP1
USART3
PH0 - - - - - - - -
Port H PH1 - - - - - - - -
PH3 - - - - - - - -
DocID029968 Rev 3
STM32L452xx
Table 18. Alternate function AF8 to AF15 (for AF0 to AF7 see Table 17)
STM32L452xx
AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15
QUADSPI_ TIM1_BKIN_
PA6 LPUART1_CTS - - - TIM16_CH1 EVENTOUT
BK1_IO3 COMP2
QUADSPI_
PA7 - - - COMP2_OUT - - EVENTOUT
BK1_IO2
Port A
PA8 - - - - - SAI1_SCK_A LPTIM2_OUT EVENTOUT
PA9 - - - - - SAI1_FS_A TIM15_BKIN EVENTOUT
USBCRS_
PA10 - - - - SAI1_SD_A - EVENTOUT
SYNC
TIM1_BKIN2_
PA11 - CAN1_RX USBDM - - - EVENTOUT
COMP1
QUADSPI_
PB0 - - - COMP1_OUT SAI1_EXTCLK - EVENTOUT
BK1_IO1
LPUART1_RTS QUADSPI_
PB1 - - - - LPTIM2_IN1 EVENTOUT
_DE BK1_IO0
PB2 - - - - - - - EVENTOUT
PB3 - - - - - SAI1_SCK_B - EVENTOUT
PB4 - TSC_G2_IO1 - - - SAI1_MCLK_B - EVENTOUT
PB5 - TSC_G2_IO2 - - COMP2_OUT SAI1_SD_B TIM16_BKIN EVENTOUT
DocID029968 Rev 3
STM32L452xx
Table 18. Alternate function AF8 to AF15 (for AF0 to AF7 see Table 17) (continued)
STM32L452xx
AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15
QUADSPI_
PD5 - - - - - - EVENTOUT
BK2_IO1
QUADSPI_
PD6 - - - - SAI1_SD_A - EVENTOUT
Port D BK2_IO2
QUADSPI_
PD7 - - - - - - EVENTOUT
BK2_IO3
PD8 - - - - - - - EVENTOUT
PD9 - - - - - - - EVENTOUT
PD10 - TSC_G6_IO1 - - - - - EVENTOUT
PD11 - TSC_G6_IO2 - - - - LPTIM2_ETR EVENTOUT
PD12 - TSC_G6_IO3 - - - - LPTIM2_IN1 EVENTOUT
PD13 - TSC_G6_IO4 - - - - LPTIM2_OUT EVENTOUT
PD14 - - - - - - - EVENTOUT
STM32L452xx
PD15 - - - - - - - EVENTOUT
Table 18. Alternate function AF8 to AF15 (for AF0 to AF7 see Table 17) (continued)
STM32L452xx
AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15
PH3 - - - - - - - EVENTOUT
Memory mapping STM32L452xx
5 Memory mapping
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Table 19. STM32L452xx memory map and peripheral register boundary addresses(1)
Table 19. STM32L452xx memory map and peripheral register boundary addresses(1)
(continued)
Bus Boundary address Size(bytes) Peripheral
Table 19. STM32L452xx memory map and peripheral register boundary addresses(1)
(continued)
Bus Boundary address Size(bytes) Peripheral
6 Electrical characteristics
Figure 13. Pin loading conditions Figure 14. Pin input voltage
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Caution: Each power supply pair (VDD/VSS, VDDA/VSSA etc.) must be decoupled with filtering ceramic
capacitors as shown above. These capacitors must be placed as close as possible to, or
below, the appropriate pins on the underside of the PCB to ensure the good functionality of
the device.
Figure 16. Current consumption measurement scheme with and without external
SMPS power supply
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The IDD_ALL parameters given in Table 27 to Table 49 represent the total MCU consumption
including the current supplying VDD, VDDA, VDDUSB and VBAT.
∑IVDD Total current into sum of all VDD power lines (source)(1)(2) 140
∑IVSS Total current out of sum of all VSS ground lines (sink) (1)
140
IVDD(PIN) Maximum current into each VDD power pin (source)(1) 100
IVSS(PIN) Maximum current out of each VSS ground pin (sink)(1) 100
Output current sunk by any I/O and control pin except FT_f 20
IIO(PIN) Output current sunk by any FT_f pin 20
Output current sourced by any I/O and control pin 20 mA
Total output current sunk by sum of all I/Os and control pins(3) 100
∑IIO(PIN)
(3)
Total output current sourced by sum of all I/Os and control pins 100
Injected current on FT_xxx, TT_xx, RST and B pins, except PA4,
-5/+0(5)
IINJ(PIN)(4) PA5
Injected current on PA4, PA5 -5/0
∑|IINJ(PIN)| Total injected current (sum of all I/Os and control pins)(6) 25
1. All main power (VDD, VDDA, VDDUSB, VBAT) and ground (VSS, VSSA) pins must always be connected to the external power
supplies, in the permitted range.
2. Valid also for VDD12 on SMPS packages.
3. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count QFP packages.
4. Positive injection (when VIN > VDDIOx) is not possible on these I/Os and does not occur for input voltages lower than the
specified maximum value.
5. A negative injection is induced by VIN < VSS. IINJ(PIN) must never be exceeded. Refer also to Table 20: Voltage
characteristics for the maximum allowed input voltage values.
6. When several inputs are submitted to a current injection, the maximum ∑|IINJ(PIN)| is the absolute sum of the negative
injected currents (instantaneous values).
Table 25. Embedded reset and power control block characteristics (continued)
Symbol Parameter Conditions(1) Min Typ Max Unit
Table 25. Embedded reset and power control block characteristics (continued)
Symbol Parameter Conditions(1) Min Typ Max Unit
IDD
PVM3 and PVM4
(PVM3/PVM4) - - 2 - µA
(2) consumption from VDD
1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power
sleep modes.
2. Guaranteed by design.
3. BOR0 is enabled in all modes (except shutdown) and its consumption is therefore included in the supply
current characteristics tables.
VREFINT Internal reference voltage –40 °C < TA < +130 °C 1.182 1.212 1.232 V
ADC sampling time when
tS_vrefint (1) reading the internal reference - 4(2) - - µs
voltage
Start time of reference voltage
tstart_vrefint - - 8 12(2) µs
buffer when ADC is enable
VREFINT buffer consumption
from VDD when converted by - - 12.5 20(2) µA
IDD(VREFINTBUF)
ADC
Internal reference voltage
∆VREFINT spread over the temperature VDD = 3 V - 5 7.5(2) mV
range
TCoeff Temperature coefficient –40°C < TA < +130°C - 30 50(2) ppm/°C
ACoeff Long term stability 1000 hours, T = 25°C - - TBD(2) ppm
VDDCoeff Voltage coefficient 3.0 V < VDD < 3.6 V - 250 1200(2) ppm/V
VREFINT_DIV1 1/4 reference voltage 24 25 26
%
VREFINT_DIV2 1/2 reference voltage - 49 50 51
VREFINT
VREFINT_DIV3 3/4 reference voltage 74 75 76
1. The shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design.
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06Y9
Electrical characteristics
Table 27. Current consumption in Run and Low-power run modes, code with data processing
running from Flash, ART enable (Cache ON Prefetch OFF)
Conditions TYP MAX(1)
Symbol Parameter Unit
- Voltage fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
scaling
26 MHz 2.35 2.40 2.50 2.65 3.00 2.65 2.75 2.90 3.20 3.75
16 MHz 1.50 1.55 1.65 1.80 2.15 1.70 1.75 1.95 2.20 2.80
8 MHz 0.815 0.845 0.940 1.10 1.45 0.95 1.00 1.15 1.45 2.00
Range 2 4 MHz 0.465 0.495 0.595 0.760 1.10 0.55 0.60 0.75 1.05 1.60
2 MHz 0.295 0.320 0.420 0.580 0.910 0.35 0.40 0.55 0.85 1.40
fHCLK = fHSE up to 1 MHz 0.205 0.235 0.330 0.495 0.825 0.25 0.30 0.45 0.75 1.30
48MHz included,
Supply 100 kHz 0.130 0.155 0.250 0.415 0.745 0.15 0.25 0.40 0.65 1.25
DocID029968 Rev 3
STM32L452xx
Table 28. Current consumption in Run modes, code with data processing running from Flash,
STM32L452xx
ART enable (Cache ON Prefetch OFF) and power supplied by external SMPS
(VDD12 = 1.10 V)
Conditions(1) TYP
Symbol Parameter Unit
- fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C
Electrical characteristics
99/210
Table 29. Current consumption in Run and Low-power run modes, code with data processing
100/210
Electrical characteristics
running from Flash, ART disable
Conditions TYP MAX(1)
Symbol Parameter Unit
Voltage
- fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
scaling
26 MHz 2.75 2.80 2.90 3.10 3.40 3.15 3.25 3.40 3.70 4.30
16 MHz 1.95 2.00 2.10 2.25 2.60 2.25 2.30 2.50 2.75 3.35
8 MHz 1.10 1.15 1.25 1.40 1.75 1.25 1.35 1.50 1.75 2.35
Range 2 4 MHz 0.640 0.670 0.765 0.935 1.25 0.75 0.80 0.95 1.25 1.80
2 MHz 0.380 0.405 0.505 0.670 1.00 0.45 0.50 0.65 0.95 1.50
fHCLK = fHSE up to
48MHz included, 1 MHz 0.250 0.275 0.375 0.540 0.865 0.30 0.35 0.50 0.80 1.35
Supply
IDD_ALL bypass mode 100 kHz 0.135 0.160 0.255 0.420 0.750 0.15 0.25 0.40 0.65 1.25
current in mA
(Run) PLL ON above 80 MHz 8.85 8.90 9.05 9.30 9.70 10.0 10.5 10.5 11.0 11.5
Run mode
48 MHz all
DocID029968 Rev 3
72 MHz 8.00 8.05 8.20 8.40 8.85 9.05 9.15 9.35 9.70 10.5
peripherals disable
64 MHz 7.90 7.95 8.10 8.35 8.75 8.95 9.10 9.35 9.70 10.5
Range 1 48 MHz 6.60 6.65 6.80 7.05 7.45 7.55 7.65 7.90 8.30 9.00
32 MHz 4.75 4.80 4.95 5.15 5.55 5.40 5.50 5.75 6.10 6.80
24 MHz 3.60 3.65 3.80 4.00 4.35 4.10 4.20 4.40 4.75 5.40
16 MHz 2.60 2.65 2.75 2.95 3.35 3.00 3.05 3.25 3.60 4.25
2 MHz 340 360 470 650 1000 400 455 575 880 1550
Supply
IDD_ALL current in fHCLK = fMSI 1 MHz 175 215 320 500 855 225 285 420 720 1350
µA
(LPRun) Low-power all peripherals disable 400 kHz 89.5 120 225 405 760 130 185 340 620 1250
run
100 kHz 42.5 75.5 180 360 715 75 145 320 575 1200
1. Guaranteed by characterization results, unless otherwise specified.
STM32L452xx
Table 30. Current consumption in Run modes, code with data processing running from Flash,
STM32L452xx
ART disable and power supplied by external SMPS (VDD12 = 1.10 V)
Conditions(1) TYP
Uni
Symbol Parameter
t
- fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C
Supply current in Run fHCLK = fHSE up to 48MHz included, bypass mode 24 MHz 1.29 1.31 1.37 1.44 1.56
IDD_ALL(Run) mA
mode PLL ON above 48 MHz all peripherals disable 16 MHz 0.93 0.95 0.99 1.06 1.20
8 MHz 0.47 0.50 0.54 0.60 0.75
DocID029968 Rev 3
Electrical characteristics
101/210
Table 31. Current consumption in Run and Low-power run modes, code with data processing
102/210
Electrical characteristics
running from SRAM1
Conditions TYP MAX(1)
Symbol Parameter Unit
Voltage 105 125 105 125
- fHCLK 25 °C 55 °C 85 °C 25 °C 55 °C 85 °C
scaling °C °C °C °C
26 MHz 2.40 2.40 2.55 2.70 3.05 2.70 2.75 2.90 3.20 3.80
16 MHz 1.50 1.55 1.65 1.80 2.15 1.70 1.80 1.95 2.25 2.80
8 MHz 0.820 0.850 0.950 1.10 1.45 0.95 1.00 1.15 1.45 2.00
Range 2 4 MHz 0.470 0.500 0.600 0.765 1.10 0.55 0.60 0.75 1.05 1.60
2 MHz 0.295 0.325 0.420 0.585 0.915 0.35 0.40 0.55 0.85 1.40
fHCLK = fHSE up to
48MHz included, 1 MHz 0.210 0.235 0.330 0.495 0.825 0.25 0.30 0.45 0.75 1.30
Supply
IDD_ALL bypass mode 100 kHz 0.130 0.155 0.250 0.415 0.750 0.15 0.25 0.35 0.65 1.25
current in mA
(Run) PLL ON above 80 MHz 8.55 8.60 8.75 8.95 9.35 9.55 9.65 9.85 10.5 11.0
Run mode
48 MHz all
DocID029968 Rev 3
72 MHz 7.70 7.80 7.90 8.15 8.50 8.60 8.70 8.90 9.25 9.95
peripherals disable
64 MHz 6.90 6.95 7.10 7.30 7.70 7.70 7.75 7.95 8.35 9.00
Range 1 48 MHz 5.15 5.20 5.30 5.55 5.90 5.75 5.85 6.05 6.40 7.05
32 MHz 3.45 3.50 3.65 3.85 4.25 3.90 4.00 4.20 4.50 5.15
24 MHz 2.65 2.70 2.80 3.00 3.40 3.00 3.05 3.25 3.55 4.20
16 MHz 1.80 1.85 1.95 2.15 2.55 2.05 2.10 2.30 2.60 3.25
2 MHz 220 255 360 540 895 270 330 460 760 1400
Supply
fHCLK = fMSI 1 MHz 120 155 260 440 795 165 215 370 660 1300
IDD_ALL current in
all peripherals disable µA
(LPRun) low-power 400 kHz 60.0 92.0 195 375 730 100 160 330 585 1250
FLASH in power-down
run mode
100 kHz 36.0 62.5 165 345 695 63.0 130 305 555 1200
1. Guaranteed by characterization results, unless otherwise specified.
STM32L452xx
Table 32. Current consumption in Run, code with data processing running from
STM32L452xx
SRAM1 and power supplied by external SMPS (VDD12 = 1.10 V)
Conditions(1) TYP
Symbol Parameter Unit
- fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C
Electrical characteristics
103/210
Electrical characteristics STM32L452xx
Table 33. Typical current consumption in Run and Low-power run modes, with different codes
running from Flash, ART enable (Cache ON Prefetch OFF)
Conditions TYP TYP
Symbol Parameter Unit Unit
Voltage
- Code 25 °C 25 °C
scaling
fHCLK = 26 MHz
Coremark 2.65 102
Range 2
Dhrystone 2.1 2.75 mA 106 µA/MHz
fHCLK = fHSE up
to 48 MHz Fibonacci 2.60 100
Supply included, bypass While(1) 2.35 90
IDD_ALL
current in mode PLL ON
(Run) Reduced code (1)
8.45 106
Run mode above 48 MHz fHCLK = 80 MHz
all peripherals Coremark 9.45 118
Range 1
disable
Dhrystone 2.1 9.85 mA 123 µA/MHz
Fibonacci 9.25 116
While(1) 8.45 106
(1)
Reduced code 225 113
Supply Coremark 260 130
IDD_ALL current in fHCLK = fMSI = 2 MHz
Dhrystone 2.1 270 µA 135 µA/MHz
(LPRun) Low-power all peripherals disable
run Fibonacci 245 123
While(1) 285 143
1. Reduced code used for characterization results provided in Table 27, Table 29, Table 31.
Table 34. Typical current consumption in Run, with different codes running from Flash,
ART enable (Cache ON Prefetch OFF) and power supplied by external SMPS
(VDD12 = 1.10 V)
Conditions(1) TYP TYP
Symbol Parameter Voltage Unit Unit
- Code 25 °C 25 °C
scaling
Reduced code(2) 1.01 39
fHCLK = 26 MHz
Coremark 1.14 44
Dhrystone 2.1 1.19 46
fHCLK = fHSE up to
48 MHz included, Fibonacci 1.12 43
Supply bypass mode PLL While(1) 1.01 39
IDD_ALL
current in ON above mA µA/MHz
(Run) Reduced code(2) 3.04 38
Run mode 48 MHz
fHCLK = 80 MHz
1. All values are obtained by calculation based on measurements done without SMPS and using following parameters:
SMPS input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.10 V
2. Reduced code used for characterization results provided in Table 27, Table 29, Table 31.
Table 35. Typical current consumption in Run, with different codes running from Flash,
ART enable (Cache ON Prefetch OFF) and power supplied by external SMPS
(VDD12 = 1.05 V)
Conditions(1) TYP TYP
Symbol Parameter Voltage Unit Unit
- Code 25 °C 25 °C
scaling
fHCLK = fHSE up to Reduced code(2) 0.92 36
fHCLK = 26 MHz
48 MHz included, Coremark 1.04 40
Supply bypass mode PLL
IDD_ALL Dhrystone 2.1 1.08 42
current in ON above mA µA/MHz
(Run)
Run mode 48 MHz Fibonacci 1.02 39
all peripherals
disable While(1) 0.92 36
1. All values are obtained by calculation based on measurements done without SMPS and using following parameters:
SMPS input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.05 V
2. Reduced code used for characterization results provided in Table 27, Table 29, Table 31.
Table 36. Typical current consumption in Run and Low-power run modes, with different codes
running from Flash, ART disable
Conditions TYP TYP
Symbol Parameter Unit Unit
Voltage
- Code 25 °C 25 °C
scaling
Range 2
fHCLK = fHSE up to Dhrystone 2.1 2.50 mA 96 µA/MHz
48 MHz included, Fibonacci 2.30 88
Supply bypass mode
IDD_ALL While(1) 2.20 84.6
current in PLL ON above
(Run) Reduced code(1) 8.85 111
Run mode 48 MHz
all peripherals Range 1 Coremark 8.15 102
disable Dhrystone 2.1 8.15 mA 102 µA/MHz
Fibonacci 7.55 94
While(1) 7.95 99
Reduced code(1) 340 170
Supply Coremark 380 190
IDD_ALL current in fHCLK = fMSI = 2 MHz
Dhrystone 2.1 355 µA 178 µA/MHz
(LPRun) Low-power all peripherals disable
run Fibonacci 355 178
While(1) 405 203
1. Reduced code used for characterization results provided in Table 27, Table 29, Table 31.
Table 37. Typical current consumption in Run modes, with different codes running from
Flash, ART disable and power supplied by external SMPS (VDD12 = 1.10 V)
Conditions(1) TYP TYP
Symbol Parameter Voltage Unit Unit
- Code 25 °C 25 °C
scaling
Reduced code(2) 1.19 46
fHCLK = 80 MHz fHCLK = 26 MHz
Coremark 1.08 41
fHCLK = fHSE up to Dhrystone 2.1 1.08 41
48 MHz included, Fibonacci 0.99 38
Supply bypass mode While(1) 0.95 37
IDD_ALL
current in PLL ON above mA µA/MHz
(Run) Reduced code(2) 3.18 40
Run mode 48 MHz
all peripherals Coremark 2.93 37
disable Dhrystone 2.1 2.93 37
Fibonacci 2.71 34
While(1) 2.86 36
1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS
input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.10 V
2. Reduced code used for characterization results provided in Table 27, Table 29, Table 31.
Table 38. Typical current consumption in Run modes, with different codesrunning from
Flash, ART disable and power supplied by external SMPS (VDD12 = 1.05 V)
Conditions(1) TYP TYP
Symbol Parameter Voltage Unit Unit
- Code 25 °C 25 °C
scaling
fHCLK = fHSE up to Reduced code(2) 1.08 42
fHCLK = 26 MHz
48 MHz included, Coremark 0.98 38
Supply
IDD_ALL bypass mode
current in Dhrystone 2.1 0.98 mA 38 µA/MHz
(Run) PLL ON above
Run mode Fibonacci 0.90 35
48 MHz
all peripherals While(1) 0.86 33
1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS
input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.05 V
2. Reduced code used for characterization results provided in Table 27, Table 29, Table 31.
Table 39. Typical current consumption in Run and Low-power run modes, with different codes
running from SRAM1
Conditions TYP TYP
Symbol Parameter Unit Unit
Voltage
- Code 25 °C 25 °C
scaling
Coremark 2.20 85
Range 2
Table 40. Typical current consumption in Run, with different codesrunning from
SRAM1 and power supplied by external SMPS (VDD12 = 1.10 V)
Conditions(1) TYP TYP
Symbol Parameter Voltage Unit Unit
- Code 25 °C 25 °C
scaling
Reduced code(2) 1.04 40
Table 41. Typical current consumption in Run, with different codesrunning from
SRAM1 and power supplied by external SMPS (VDD12 = 1.05 V)
Conditions(1) TYP TYP
Symbol Parameter Voltage Unit Unit
- Code 25 °C 25 °C
scaling
fHCLK = fHSE up to Reduced code(2) 0.94 36
fHCLK = 26 MHz
26 MHz 0.700 0.730 0.830 1.00 1.35 0.80 0.90 1.05 1.30 1.90
16 MHz 0.475 0.505 0.605 0.775 1.10 0.55 0.65 0.80 1.05 1.65
8 MHz 0.300 0.325 0.425 0.590 0.920 0.35 0.45 0.60 0.85 1.45
Range 2 4 MHz 0.210 0.235 0.335 0.500 0.830 0.25 0.30 0.45 0.75 1.35
fHCLK = fHSE up 2 MHz 0.165 0.190 0.290 0.455 0.785 0.20 0.25 0.40 0.70 1.25
to 48 MHz
Supply included, bypass 1 MHz 0.145 0.170 0.265 0.430 0.760 0.15 0.25 0.40 0.65 1.25
IDD_ALL current in mode 100 kHz 0.125 0.150 0.245 0.410 0.740 0.15 0.20 0.35 0.65 1.20
mA
(Sleep) sleep pll ON above 80 MHz 2.30 2.35 2.45 2.65 3.05 2.55 2.65 2.85 3.15 3.80
mode, 48 MHz all
72 MHz 2.10 2.15 2.25 2.45 2.80 2.35 2.40 2.60 2.90 3.55
DocID029968 Rev 3
peripherals
disable 64 MHz 1.90 1.90 2.05 2.25 2.60 2.10 2.20 2.35 2.70 3.35
Range 1 48 MHz 1.40 1.40 1.55 1.75 2.15 1.60 1.65 1.85 2.15 2.80
32 MHz 0.970 1.00 1.15 1.30 1.70 1.10 1.20 1.40 1.70 2.35
24 MHz 0.765 0.800 0.920 1.10 1.50 0.90 0.95 1.15 1.45 2.10
16 MHz 0.555 0.590 0.705 0.895 1.25 0.65 0.75 0.90 1.20 1.85
Supply 2 MHz 76.0 110 215 395 745 120 185 355 610 1250
current in 1 MHz 54.0 86.5 195 370 725 88.5 160 335 585 1250
IDD_ALL f =f
low-power HCLK MSI µA
(LPSleep) all peripherals disable 400 kHz 39.0 70.5 175 355 710 68.5 140 320 570 1200
sleep
mode 100 kHz 35.5 75.0 195 345 715 66.0 130 305 560 1200
Electrical characteristics
1. Guaranteed by characterization results, unless otherwise specified.
109/210
Table 43. Current consumption in Sleep, Flash ON and power supplied by external SMPS
110/210
Electrical characteristics
(VDD12 = 1.10 V)
Conditions(1) TYP
Symbol Parameter Unit
- fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C
2 MHz 76.5 105 220 410 740 110 175 350 600 1250
Supply current
IDD_ALL fHCLK = fMSI 1 MHz 54.0 81.0 195 385 715 81.5 155 325 570 1200
in low-power µA
(LPSleep) all peripherals disable 400 kHz 28.0 64.5 175 370 695 60.5 130 305 555 1200
sleep mode
100 kHz 21.5 55.0 170 360 690 58.5 120 300 550 1200
STM32L452xx
1. Guaranteed by characterization results, unless otherwise specified.
Table 45. Current consumption in Stop 2 mode
STM32L452xx
Conditions TYP MAX(1)
Symbol Parameter Unit
- VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
1.8 V 2.05 5.40 19.0 44.0 97.0 4.00 11.5 41.5 100 220
Supply current in 2.4 V 2.10 5.45 19.0 44.5 98.5 4.05 11.5 42.0 100 225
IDD_ALL
Stop 2 mode, - µA
(Stop 2) 3V 2.05 5.55 19.5 45.0 100 4.10 12.0 43.0 105 230
RTC disabled
3.6 V 2.05 5.65 20.0 46.5 105 4.20 12.0 44.0 105 235
1.8 V 2.30 5.65 19.0 44.0 97.0 4.50 12.0 42.0 100 220
2.4 V 2.35 5.80 19.5 44.5 99.0 4.65 12.0 42.5 100 225
RTC clocked by LSI
3V 2.50 5.90 20.0 45.5 100 4.90 12.5 43.5 105 230
3.6 V 2.60 6.15 20.5 47.0 105 5.20 13.0 44.5 105 235
1.8 V 2.60 6.05 21.0 48.0 97.0 - - - - -
IDD_ALL Supply current in 2.4 V 2.55 6.20 21.0 49.0 98.5 - - - - -
RTC clocked by LSE
(Stop 2 with Stop 2 mode, µA
bypassed at 32768 Hz 3V 2.80 6.35 21.5 49.5 100 - - - - -
DocID029968 Rev 3
Electrical characteristics
from Stop 2 voltage Range 2.
Stop2)
mode See (3).
Wakeup clock is
HSI16 = 16 MHz,
3V 1.55 - - - - - - - - -
voltage Range 1.
See (3).
1. Guaranteed based on test during characterization, unless otherwise specified.
111/210
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
112/210
Electrical characteristics
3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 52: Low-power mode wakeup timings.
DocID029968 Rev 3
STM32L452xx
Table 46. Current consumption in Stop 1 mode
STM32L452xx
Conditions TYP MAX(1)
Symbol Parameter Unit
- VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
Supply 1.8 V 9.85 29.0 100 225 430 17.0 49.5 185 395 850
IDD_ALL current in 2.4 V 9.85 29.5 100 225 435 17.0 49.5 185 395 850
- µA
(Stop 1) Stop 1 mode, 3V 9.90 29.5 100 225 435 17.5 50.0 185 400 850
RTC disabled
3.6 V 10.0 28.0 105 230 410 17.5 50.5 190 405 860
1.8 V 10.5 29.5 100 225 430 17.0 50.0 185 395 840
2.4 V 10.5 29.5 100 225 435 17.0 50.5 185 395 845
RTC clocked by LSI
3V 10.5 30.0 105 225 435 17.5 50.5 185 400 855
3.6 V 10.5 30.0 105 230 440 17.5 51.5 190 405 860
Electrical characteristics
Stop 1
Wakeup clock HSI16 =
16 MHz, voltage Range 1. 3V 1.20 - - - - - - - - -
See (3).
1. Guaranteed based on test during characterization, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 52: Low-power mode wakeup timings.
113/210
Table 47. Current consumption in Stop 0
114/210
Electrical characteristics
Conditions TYP MAX(1)
Symbol Parameter Unit
VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
1.8 V 125 150 240 390 645 145 190 350 600 1150
Supply
IDD_ALL current in 2.4 V 125 150 240 390 645 150 195 355 605 1150
µA
(Stop 0) Stop 0 mode, 3V 125 150 245 395 650 155 195 360 610 1150
RTC disabled
3.6 V 125 155 245 400 655 155 200 365 615 1150(2)
1. Guaranteed by characterization results, unless otherwise specified.
2. Guaranteed by test in production.
DocID029968 Rev 3
STM32L452xx
Table 48. Current consumption in Standby mode
STM32L452xx
Conditions TYP MAX(1)
Symbol Parameter Unit
- VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
1.8 V 100 270 1200 3300 8650 205 650 3250 9250 25000
2.4 V 110 305 1400 3850 10000 225 750 3750 11000 29000
Supply current no independent watchdog
3V 125 360 1650 4550 12000 290 950 4450 13000 33500
in Standby
IDD_ALL mode (backup 3.6 V 160 445 2000 5500 14500 355 1150 5250 15000 38500
nA
(Standby) registers 1.8 V 265 435 1350 3450 8700 - - - - -
retained),
with independent 2.4 V 335 540 1650 4100 10500 - - - - -
RTC disabled
watchdog 3V 420 655 1950 4850 12500 - - - - -
3.6 V 580 895 2450 5950 14500 - - - - -
1.8 V 345 505 1400 3450 8600 720 1150 3750 9550 25000
RTC clocked by LSI, no 2.4 V 420 620 1650 4050 10000 875 1450 4400 11500 29000
DocID029968 Rev 3
independent watchdog 3V 510 745 2000 4750 12000 1070 1700 5100 13500 34000
3.6 V 635 915 2450 5900 14500 1320 2100 6000 15500 39000
nA
1.8 V 375 540 1450 3550 8800 - - - - -
RTC clocked by LSI, with 2.4 V 490 690 1800 4250 10500 - - - - -
Supply current independent watchdog 3V 620 860 2150 5100 12500 - - - - -
in Standby
IDD_ALL 3.6 V 845 1150 2700 6200 15000 - - - - -
mode (backup
(Standby
registers 1.8 V 395 - - - - - - - - -
with RTC)
retained),
RTC clocked by LSE 2.4 V 500 - - - - - - - - -
RTC enabled
bypassed at 32768Hz 3V 625 - - - - - - - - -
3.6 V 795 - - - - - - - - -
Electrical characteristics
nA
1.8 V 375 550 1500 3550 8800 - - - - -
RTC clocked by LSE 2.4 V 460 665 1750 4250 10500 - - - - -
quartz (2) in low drive mode 3 V 565 810 2100 5050 12500 - - - - -
3.6 V 720 1000 2600 5900 15000 - - - - -
115/210
Table 48. Current consumption in Standby mode (continued)
116/210
Electrical characteristics
Conditions TYP MAX(1)
Symbol Parameter Unit
- VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
Supply current 1.8 V 250 730 2700 6350 13850 575 1800 6350 14500 32000
IDD_ALL to be added in 2.4 V 250 740 2700 6150 14000 620 1800 6450 14500 32000
Standby mode - nA
(SRAM2)(3) 3V 255 740 2700 6450 13500 645 1850 6500 15000 32500
when SRAM2
is retained 3.6 V 255 755 2800 6500 13500 790 1950 6500 15000 33000
IDD_ALL Supply current Wakeup clock is
(wakeup during wakeup MSI = 4 MHz. 3V 2.00 - - - - - - - - - mA
from from Standby
See (4).
Standby) mode
1. Guaranteed by characterization results, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
3. The supply current in Standby with SRAM2 mode is: IDD_ALL(Standby) + IDD_ALL(SRAM2). The supply current in Standby with RTC with SRAM2 mode is: IDD_ALL(Standby
DocID029968 Rev 3
+ RTC) + IDD_ALL(SRAM2).
4. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 52: Low-power mode wakeup timings.
STM32L452xx
Table 49. Current consumption in Shutdown mode (continued)
STM32L452xx
Conditions TYP MAX(1)
Symbol Parameter Unit
- VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
1.8 V 165 275 950 2600 6550 - - - - -
Supply current RTC clocked by LSE 2.4 V 235 370 1150 3100 7650 - - - - -
in Shutdown bypassed at 32768 Hz 3V 325 485 1450 3750 9050 - - - - -
IDD_ALL mode 3.6 V 445 655 1900 4800 11500 - - - - -
(Shutdown (backup nA
with RTC) registers 1.8 V 290 410 1050 2550 6700 - - - - -
retained) RTC RTC clocked by LSE 2.4 V 375 515 1250 3050 7800 - - - - -
enabled quartz (2) in low drive
mode 3V 480 645 1550 3700 8800 - - - - -
3.6 V 625 840 1950 4950 11500 - - - - -
Supply current Wakeup clock is
IDD_ALL
during wakeup
(wakeup from MSI = 4 MHz. 3V 1.00 - - - - - - - - - mA
DocID029968 Rev 3
from Shutdown
Shutdown) See (3).
mode
1. Guaranteed by characterization results, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 52: Low-power mode wakeup timings.
Electrical characteristics
3V 5.00 - - - - - - - - -
IDD_VBAT Backup domain 3.6 V 11.0 - - - - - - - - -
nA
(VBAT) supply current 1.8 V 145 165 285 550 - - - - - -
RTC enabled and 2.4 V 205 235 370 670 - - - - - -
clocked by LSE
bypassed at 32768 Hz 3V 285 315 470 820 - - - - - -
3.6 V 375 430 715 1350 - - - - - -
117/210
I SW = V DDIOx × f SW × C
where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDDIOx is the I/O supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT + CS
CS is the PCB board capacitance including the pad pin.
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.
Wakeup time from Standby Wakeup clock MSI = 8 MHz 16.13 18.2
tWUSTBY Range 1 µs
mode to Run mode Wakeup clock MSI = 4 MHz 24.06 26.6
tWUSTBY Wakeup time from Standby Wakeup clock MSI = 8 MHz 16.09 18.2
Range 1 µs
SRAM2 with SRAM2 to Run mode Wakeup clock MSI = 4 MHz 24 26.6
Wakeup time from
tWUSHDN Shutdown mode to Run Range 1 Wakeup clock MSI = 4 MHz 255.38 316.41 µs
mode
1. Guaranteed by characterization results.
Voltage scaling
- 8 48
Range 1
fHSE_ext User external clock source frequency MHz
Voltage scaling
- 8 26
Range 2
VHSEH OSC_IN input pin high level voltage - 0.7 VDDIOx - VDDIOx
V
VHSEL OSC_IN input pin low level voltage - VSS - 0.3 VDDIOx
Voltage scaling
7 - -
tw(HSEH) Range 1
OSC_IN high or low time ns
tw(HSEL) Voltage scaling
18 - -
Range 2
1. Guaranteed by design.
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For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 20 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 20). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
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LSEDRV[1:0] = 00
- 250 -
Low drive capability
LSEDRV[1:0] = 01
- 315 -
Medium low drive capability
IDD(LSE) LSE current consumption nA
LSEDRV[1:0] = 10
- 500 -
Medium high drive capability
LSEDRV[1:0] = 11
- 630 -
High drive capability
LSEDRV[1:0] = 00
- - 0.5
Low drive capability
LSEDRV[1:0] = 01
- - 0.75
Maximum critical crystal Medium low drive capability
Gmcritmax µA/V
gm LSEDRV[1:0] = 10
- - 1.7
Medium high drive capability
LSEDRV[1:0] = 11
- - 2.7
High drive capability
tSU(LSE)(3) Startup time VDD is stabilized - 2 - s
1. Guaranteed by design.
2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for
ST microcontrollers”.
3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer
Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
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Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.
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VDD=1.62 V
-1.2 -
to 3.6 V
Range 0 to 3 0.5
VDD=2.4 V
-0.5 -
to 3.6 V
Range 0 - - 0.6 1
Range 1 - - 0.8 1.2
Range 2 - - 1.2 1.7
Range 3 - - 1.9 2.5
Range 4 - - 4.7 6
MSI oscillator Range 5 - - 6.5 9
MSI and
IDD(MSI)(6) power µA
PLL mode Range 6 - - 11 15
consumption
Range 7 - - 18.5 25
Range 8 - - 62 80
Range 9 - - 85 110
Range 10 - - 110 130
Range 11 - - 155 190
1. Guaranteed by characterization results.
2. This is a deviation for an individual part once the initial frequency has been measured.
3. Sampling mode means Low-power run/Low-power sleep modes with Temperature sensor disable.
4. Average period of MSI @48 MHz is compared to a real 48 MHz clock over 28 cycles. It includes frequency tolerance + jitter
of MSI @48 MHz clock.
5. Only accumulated jitter of MSI @48 MHz is extracted over 28 cycles.
For next transition: min. and max. jitter of 2 consecutive frame of 28 cycles of the MSI @48 MHz, for 1000 captures over 28
cycles.
For paired transitions: min. and max. jitter of 2 consecutive frame of 56 cycles of the MSI @48 MHz, for 1000 captures over
56 cycles.
6. Guaranteed by design.
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Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
• A supply overvoltage is applied to each power supply pin.
• A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Max(VDDXXX)+1 V <
- - 200(7)
VIN ≤ 5.5 V(3)(5)(6)
VIN ≤ Max(VDDXXX)
Ilkg (4)(5) - - ±150 nA
Max(VDDXXX) ≤ VIN ≤
FT_u and PC3 I/O - - 2500(3)
Max(VDDXXX)+1 V(4)(5)
Max(VDDXXX)+1 V <
- - 250
VIN ≤ 5.5 V(4)(5)(6)
VIN ≤ Max(VDDXXX)(7) - - ±150
TT_xx input leakage
current Max(VDDXXX) ≤ VIN <
- - 2000(3)
3.6 V(7)
Weak pull-up
RPU V = VSS 25 40 55 kΩ
equivalent resistor (8) IN
Weak pull-down
RPD VIN = VDDIOx 25 40 55 kΩ
equivalent resistor(8)
CIO I/O pin capacitance - - 5 - pF
1. Refer to Figure 25: I/O input characteristics.
2. Tested in production.
3. Guaranteed by design.
4. Max(VDDXXX) is the maximum value of all the I/O supplies. Refer to Table: Legend/Abbreviations used in the pinout table.
5. To sustain a voltage higher than MIN(VDD, VDDA, VDDUSB) +0.3 V, the internal Pull-up and Pull-Down resistors must be
disabled.
6. All TX_xx IO except FT_u and PC3.
7. This value represents the pad leakage of the IO itself. The total product pad leakage is provided by this formula:
ITotal_Ileak_max = 10 µA + [number of IOs where VIN is applied on the pad] ₓ Ilkg(Max).
8. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 25 for standard I/Os, and in Figure 25 for
5 V tolerant I/Os.
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In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 6.2:
• The sum of the currents sourced by all the I/Os on VDDIOx, plus the maximum
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
ΣIVDD (see Table 20: Voltage characteristics).
• The sum of the currents sunk by all the I/Os on VSS, plus the maximum consumption of
the MCU sunk on VSS, cannot exceed the absolute maximum rating ΣIVSS (see
Table 20: Voltage characteristics).
VOL Output low level voltage for an I/O pin CMOS port(2) - 0.4
|IIO| = 8 mA
VOH Output high level voltage for an I/O pin V VDDIOx-0.4 -
DDIOx ≥ 2.7 V
VOL(3) Output low level voltage for an I/O pin TTL port(2) - 0.4
|IIO| = 8 mA
VOH(3) Output high level voltage for an I/O pin V 2.4 -
DDIOx ≥ 2.7 V
VOL(3) Output low level voltage for an I/O pin |IIO| = 20 mA - 1.3
VOH (3) Output high level voltage for an I/O pin VDDIOx ≥ 2.7 V VDDIOx-1.3 -
(3)
VOL Output low level voltage for an I/O pin |IIO| = 4 mA - 0.45
V
VOH(3) Output high level voltage for an I/O pin VDDIOx ≥ 1.62 V VDDIOx-0.45 -
VOL(3) Output low level voltage for an I/O pin |IIO| = 2 mA - 0.35ₓVDDIOx
VOH (3)
Output high level voltage for an I/O pin 1.62 V ≥ VDDIOx ≥ 1.08 V 0.65ₓVDDIOx -
|IIO| = 20 mA
- 0.4
VDDIOx ≥ 2.7 V
Output low level voltage for an FT I/O
VOLFM+ |IIO| = 10 mA
(3) pin in FM+ mode (FT I/O with "f" - 0.4
VDDIOx ≥ 1.62 V
option)
|IIO| = 2 mA
- 0.4
1.62 V ≥ VDDIOx ≥ 1.08 V
1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 20:
Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always
respect the absolute maximum ratings ΣIIO.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. Guaranteed by design.
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 26 and
Table 73, respectively.
Unless otherwise specified, the parameters given are derived from tests performed under
the ambient temperature and supply voltage conditions summarized in Table 23: General
operating conditions.
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The maximum value of RAIN can be found in Table 77: Maximum ADC RAIN.
2. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4V). It is disable when VDDA ≥ 2.4 V.
3. Fast channels are: PC0, PC1, PC2, PC3, PA0, PA1.
4. Slow channels are: all ADC inputs except the fast channels.
ADC clock frequency ≤ Single Fast channel (max speed) - -74 -73
Total 80 MHz, ended Slow channel (max speed) - -74 -73
THD harmonic Sampling rate ≤ 5.33 Msps, dB
distortion VDDA = VREF+ = 3 V, Fast channel (max speed) - -79 -76
Differential
TA = 25 °C Slow channel (max speed) - -79 -76
1. Guaranteed by design.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disable when VDDA ≥ 2.4 V. No oversampling.
ADC clock frequency ≤ Single Fast channel (max speed) - -69 -67
80 MHz, ended
Total Slow channel (max speed) - -71 -67
Sampling rate ≤ 5.33 Msps,
THD harmonic Fast channel (max speed) - -72 -71 dB
1.65 V ≤ VDDA = VREF+ ≤
distortion
3.6 V, Differential
Slow channel (max speed) - -72 -71
Voltage scaling Range 1
1. Guaranteed by design.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disable when VDDA ≥ 2.4 V. No oversampling.
ADC clock frequency ≤ Single Fast channel (max speed) - -71 -69
Total 26 MHz, ended Slow channel (max speed) - -71 -69
THD harmonic 1.65 V ≤ VDDA = VREF+ ≤ dB
distortion 3.6 V, Fast channel (max speed) - -73 -72
Differential
Voltage scaling Range 2 Slow channel (max speed) - -73 -72
1. Guaranteed by design.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disable when VDDA ≥ 2.4 V. No oversampling.
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1. Refer to Table 76: ADC characteristics for the values of RAIN and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (refer to Table 71: I/O static characteristics for the value of the pad capacitance). A high
Cparasitic value will downgrade conversion accuracy. To remedy this, fADC should be reduced.
3. Refer to Table 71: I/O static characteristics for the values of Ilkg.
Negative reference
VREF- - VSSA
voltage
Wakeup time from off state Normal mode DAC output buffer ON
- 4.2 7.5
(setting the ENx bit in the CL ≤ 50 pF, RL ≥ 5 kΩ
tWAKEUP(2) µs
DAC Control register) until Normal mode DAC output buffer
final value ±1 LSB - 2 5
OFF, CL ≤ 10 pF
Normal mode DAC output buffer ON
PSRR VDDA supply rejection ratio - -80 -28 dB
CL ≤ 50 pF, RL = 5 kΩ, DC
No load, middle
- 185 240
DAC output code (0x800)
buffer ON No load, worst code
- 340 400
(0xF1C)
DAC output No load, middle
- 155 205
buffer OFF code (0x800)
DAC consumption from
IDDV(DAC) 185 ₓ 400 ₓ µA
VREF+
Sample and hold mode, buffer ON, Ton/(Ton Ton/(Ton
-
CSH = 100 nF, worst case +Toff) +Toff)
(4) (4)
155 ₓ 205 ₓ
Sample and hold mode, buffer OFF, Ton/(Ton Ton/(Ton
-
CSH = 100 nF, worst case +Toff) +Toff)
(4) (4)
1. Guaranteed by design.
2. In buffered mode, the output can overshoot above the final value for low input code (starting from min value).
3. Refer to Table 71: I/O static characteristics.
4. Ton is the Refresh phase duration. Toff is the Hold phase duration. Refer to RM0394 reference manual for more details.
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1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads directly
without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in the
DAC_CR register.
Power supply DC 40 60 -
PSRR dB
rejection 100 kHz 25 40 -
CL = 0.5 µF(4) - 300 350
tSTART Start-up time CL = 1.1 µF(4) - 500 650 µs
(4)
CL = 1.5 µF - 650 800
Control of
maximum DC
current drive
IINRUSH on VREFBUF_ - - - 8 - mA
OUT during
start-up phase
(5)
Iload = 0 µA - 16 25
VREFBUF
IDDA(VREF
consumption Iload = 500 µA - 18 30 µA
BUF)
from VDDA
Iload = 4 mA - 35 50
1. Guaranteed by design, unless otherwise specified.
2. In degraded mode, the voltage reference buffer can not maintain accurately the output voltage which will follow (VDDA -
drop voltage).
3. Guaranteed by test in production.
4. The capacitive load must include a 100 nF capacitor in order to cut-off the high frequency noise.
5. To correctly control the VREFBUF inrush current during start-up phase and scaling change, the VDDA voltage should be in
the range [2.4 V to 3.6 V] and [2.8 V to 3.6 V] respectively for VRS = 0 and VRS = 1.
Analog supply
VDDA - 1.8 - 3.6 V
voltage(2)
Common mode
CMIR - 0 - VDDA V
input range
Normal mode - 13 -
GM Gain margin dB
Low-power mode - 20 -
CLOAD ≤ 50 pf,
RLOAD ≥ 4 kΩ
Normal mode - 5 10
follower
Wake up time configuration
tWAKEUP µs
from OFF state. CLOAD ≤ 50 pf,
RLOAD ≥ 20 kΩ
Low-power mode - 10 30
follower
configuration
OPAMP input
Ibias General purpose input - - -(4) nA
bias current
- 2 -
Non inverting - 4 -
PGA gain(3) - -
gain value - 8 -
- 16 -
PGA Gain = 2 - 80/80 -
120/
R2/R1 internal PGA Gain = 4 - -
40
resistance
Rnetwork 140/ kΩ/kΩ
values in PGA PGA Gain = 8 - -
mode(5) 20
150/
PGA Gain = 16 - -
10
Resistance
Delta R variation (R1 or - -15 - 15 %
R2)
PGA gain error PGA gain error - -1 - 1 %
GBW/
Gain = 2 - - -
2
GBW/
PGA bandwidth Gain = 4 - -
4
-
PGA BW for different non MHz
inverting gain GBW/
Gain = 8 - - -
8
GBW/
Gain = 16 - - -
16
at 1 kHz, Output
Normal mode - 500 -
loaded with 4 kΩ
at 1 kHz, Output
Low-power mode - 600 -
Voltage noise loaded with 20 kΩ
en nV/√Hz
density at 10 kHz, Output
Normal mode - 180 -
loaded with 4 kΩ
at 10 kHz, Output
Low-power mode - 290 -
loaded with 20 kΩ
OPAMP Normal mode - 120 260
no Load, quiescent
IDDA(OPAMP)(3) consumption µA
Low-power mode mode - 45 100
from VDDA
1. Guaranteed by design, unless otherwise specified.
2. The temperature range is limited to 0 °C-125 °C when VDDA is below 2 V
3. Guaranteed by characterization results.
4. Mostly I/O leakage, when used in analog mode. Refer to Ilkg parameter in Table 71: I/O static characteristics.
5. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between
OPAMP inverting input and ground. The PGA gain =1+R2/R1
Battery VBRS = 0 - 5 -
RBC charging kΩ
resistor VBRS = 1 - 1.5 -
- 1 - tTIMxCLK
tres(TIM) Timer resolution time
fTIMxCLK = 80 MHz 12.5 - ns
/4 0 0.125 512
/8 1 0.250 1024
/16 2 0.500 2048
/32 3 1.0 4096 ms
/64 4 2.0 8192
/128 5 4.0 16384
/256 6 or 7 8.0 32768
1. The exact timings still depend on the phasing of the APB interface clock versus the LSI clock so that there
is always a full RC period of uncertainty.
1 0 0.0512 3.2768
2 1 0.1024 6.5536
ms
4 2 0.2048 13.1072
8 3 0.4096 26.2144
SPI characteristics
Unless otherwise specified, the parameters given in Table 94 for SPI are derived from tests
performed under the ambient temperature, fPCLKx frequency and supply voltage conditions
summarized in Table 23: General operating conditions.
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5 ₓ VDD
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI).
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SAI characteristics
Unless otherwise specified, the parameters given in Table 97 for SAI are derived
from tests performed under the ambient temperature, fPCLKx frequency and VDD
supply voltage conditions summarized inTable 23: General operating conditions, with
the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5 ₓ VDD
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output
alternate function characteristics (CK,SD,FS).
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SDMMC characteristics
Unless otherwise specified, the parameters given in Table 98 for SDIO are derived from
tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage
conditions summarized in Table 23: General operating conditions, with the following
configuration:
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5 ₓ VDD
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output
characteristics.
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USB characteristics
The STM32L452xx USB interface is fully compliant with the USB specification version 2.0
and is USB-IF certified (for Full-speed device operation).
RPUI Embedded USB_DP pull-up value during idle 900 1250 1600
Embedded USB_DP pull-up value during Ω
RPUR 1400 2300 3200
reception
Driving high
ZDRV(3) Output driver impedance(4) 28 36 44 Ω
and low
1. TA = -40 to 125 °C unless otherwise specified.
2. The STM32L452xx USB functionality is ensured down to 2.7 V but not the full USB electrical characteristics
which are degraded in the 2.7-to-3.0 V voltage range.
3. Guaranteed by design.
4. No external termination series resistors are required on USB_DP (D+) and USB_DM (D-); the matching
impedance is already included in the embedded driver.
7 Package information
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