OSWALDO ISAI DE LA TORRE GUERRERO 4757823

Actividad 1.- Crecimiento de SC.

TGO. OSWALDO ISAI

DE LA TORRE
GUERRERO
4757823
25/ENERO/2022
DISPOSITIVOS
ELECTRONICOS

BERNARDO HARO MARTÍNEZ

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TYPES OF SEMICONDUCTORS
• INTRINSIC SEMICONDUCTORS:

They are made up of a single type of atoms, arranged in tetrahedral molecules (that is, four
atoms with a valence of 4) and their atoms joined by covalent bonds.

• This chemical configuration prevents the free movement

of electrons around the molecule, except in the event of an
increase in temperature: then the electrons take part of the
available energy and "jump", leaving a free space that is
translated as a positive charge, which in turn will attract
new electrons. This process is called recombination, and
the amount of heat required for this depends on the
chemical element in question.

• EXTRINSIC SEMICONDUCTORS:

These materials allow a doping process, that is, they allow some type of impurities
to be included in their atomic configuration. Depending on these impurities, which
can be pentavalent or trivalent, semiconductor materials are divided into two:

• N-type extrinsic semiconductors (donors). In these types of materials, electrons

outnumber holes or free charge carriers (“spaces” of positive charge). When a potential
difference is applied to the material, free electrons move to the left of the material and holes
then to the right. When the holes reach the right end, the electrons from the external circuit
enter the semiconductor, and the transmission of electric current occurs.

• P-type extrinsic semiconductors (acceptors). In these materials, the added impurity,

instead of increasing the available electrons, increases the holes. Thus, we speak of added
acceptor material, since there is a greater demand for electrons than availability and each free
"space" where an electron should go serves to facilitate the flow of current.

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The most common semiconductors used in the industry are:

• Silicon (Yes)
• Germanium (Ge), often in silicon alloys
• Gallium Arsenide (GaAs)
• Sulfur
•Oxygen
• Cadmium
• Selenium
• Indian

Liquid phase epitaxy (LPE)

Epitaxy or epitaxial growth

It is one of the processes in the manufacturing of integrated circuits.

From one face of a crystal of semiconductor material, or substrate,

a thin, uniform layer with the same crystalline structure is grown.
Using this technique, the level of impurities in the semiconductor
can be controlled very precisely, which are those that define its
character (N or P). To do this, the semiconductor is heated to
almost its melting point and brought into contact with the base
material so that, when cooled, it recrystallizes with the appropriate
structure. There are several methods:

• Vapor phase epitaxial growth (VPE).

• Liquid phase epitaxial growth (LPE).
• Epitaxial growth by molecular beams (MBE).

Metal Organic Chemical Vapor Deposition (MOCVD)EPITAXY: is the orderly growth of a single
crystalline layer that maintains a defined relationship with respect to the lower crystalline substrate

Molecular Beam Epitaxy

MBE, known as one of the most advanced and controllable growth methods, has also been utilized
for the TMD synthesis. Its ultra-high vacuum environment produces the highest achievable purity.
High-quality MoSe). Additionally, due to the epitaxial nature of the MBE, it has been used for the
growth of vdW heterostructure. The MoSe2 and WSe2 exhibit a same orientation as the graphene
template (Liu et al., 2015).
Vapor phase epitaxial growth (VPE).

In vapor phase epitaxy, the source chemicals from which the epitaxial
layers are grown are gaseous. The technique has been widely used for the
growth of several III–V compound semiconductors. VPE is often
classified into two different methods, the chloride and the hydride
methods. As an example, in the chloride method, AsCl3 or PCl3 is passed
over elemental Ga or In, or pieces of GaAs or InP, to form metal chlorides.

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Liquid phase epitaxial growth (LPE).

LPE can be an inexpensive technique with large deposition rates of high-purity layers that is, in
principle, not very complex in its design. LPE has had success in depositing III–V semiconductors
for applications in optical devices such as lasers, light-emitting diodes, infrared detectors, and solar
cells, particularly in the AlxGa1 − xAs material system. LPE materials have excellent optical
properties in this system since Al in the melt solution reacts with residual oxygen and removes it from
the growing material.

BIBLIOGRAPHIES:

Just a moment. . . (s. f.). https://www.sciencedirect.com/topics/chemistry/liquid-phase-epitaxy

Just a moment. . . (s. f.-b). https://www.sciencedirect.com/topics/chemistry/vapor-phase-epitaxy

Just a moment. . . (s. f.-c). https://www.sciencedirect.com/topics/physics-and-astronomy/molecular-beam-epitaxy