Sensors and Actuators 76 Ž1999.

152–155
www.elsevier.nlrlocatersna

Improvement of radiation resistance of magnetic field microsensors

)
Inessa Bolshakova
Magnetic Sensor Laboratory, LÕiÕ Polytechnical State UniÕersity, 1, KotliareÕski St., LÕiÕ 290013, Ukraine
Accepted 4 December 1998

Abstract

Magnetic microsensors with the active area volume of 10y5 mm3 are fabricated on the basis of III–V semiconductor microcrystals. To
improve the radiation resistance of magnetic microsensors complex metallurgical doping was applied to semiconductor microcrystals
during growth. In addition to a basic donor dopant, rare-earth elements and special extras which are able to bind oxygen and act as drains
for radiation defects are introduced. All that slows down the process of deep acceptor level complexation by means of radiation defects
and background impurities, and improves the radiation resistance of sensors. Studies of effect of fast neutrons irradiation with energies
from 0.1 % 13 MeV and fluence of 10 14 n cmy2 were carried out. It has been shown that at the mean sensitivity change of 0.12% for the
set of InSb-based microsensors with the electron concentration of Ž1 % 3. P 10 17 cmy3 , for 60% of these microsensors the change does not
exceed the determination error "0.04%. The investigations have shown the relevance of the continuation of works directed to further
improvement of the magnetic microsensor radiation resistance. q 1999 Elsevier Science S.A. All rights reserved.

Keywords: Magnetic field microsensor; Sensitivity; Radiation resistance; Fast neutrons; III–V semiconductor microcrystals

1. Introduction Results of numerous studies concerning the ionizing

Magnetic field monitoring in the accelerators during
experiments on charged particle beams is the present-day
problem. One of the main problems is the need of radiation
resistant magnetic field sensors operable under hard radia-
tion conditions.
In the modern accelerators like LHC in CERN w1x,
mainly in its detectors CMS and Atlas w2x, there are rather
high requirements regarding the magnetic field measure-
ment accuracy: 0.01% of the magnetic field level, when
the maximal induction reaches 5 T, at the long-term stabil-
ity under the radiation conditions Žgamma-doze 20 % 30
kGy, fast neutron fluence 10 14 n cmy2 ..
To reach such high accuracy of the magnetic field
measurement directly in the charged particle beams, one
needs to improve the radiation resistance of magnetic field
sensors.
It is known w3x that galvanomagnetic elements are by
one order of magnitude less sensitive to the effect of high
energetic irradiation in comparison with semiconductor
elements with gate layers Ždiodes, transistors..
)
Tel.: q7-380-322-721632; Tel.rFax: q7-380-322-970393; E-mail:
mms@inessa.lviv.ua
irradiation effect on III–V semiconductors performed in
several research centers during last years permit one to
expect the successful development of radiation resistant
magnetic sensors based on InAs, InSb and GaAs.
Ionizing irradiation causes in semiconductor materials
radiation defects of several types Žpoint defects like Frenkel
pairs, lattice defects and disordered areas, nuclear conver-
sion. resulted in changes of charge carrier concentration
and mobility. Charge carrier concentration is the very
semiconductor material parameter determining the main
characteristics of magnetic sensors, that is their sensitivity.
Therefore, the problem is to develop the semiconductor
magnetic sensors with minimum concentration changes
under irradiation.
2. Technology
2.1. Experience of preÕious researchers
There are several approaches to solving the problem of
minimizing the carrier concentration change under irradia-
tion. One of these approaches is the creation of materials
for sensitive elements of magnetic sensors with optimum

0924-4247r99r$ - see front matter q 1999 Elsevier Science S.A. All rights reserved.
PII: S 0 9 2 4 - 4 2 4 7 Ž 9 8 . 0 0 3 7 5 - 6
 I. BolshakoÕar Sensors and Actuators 76 (1999) 152–155 153

carrier concentration by means of doping of semiconductor 2.2. Experiments

crystals during the growth Žmetallurgical doping..
Experimental studies w4x of fast neutron fluences ŽF .
Radiation resistance of Hall magnetic field microsen-
influence on GaAs carrier concentration have allowed to
sors with the active area volume of 10y5 mm3 fabricated
determine the graphic dependences nŽF . s f Ž n 0 . Žwhere
on the basis of InSb and InAs semiconductor microcrys-
n 0 —initial concentration. and the analytical expression for
tals, have been studied in this paper. Technology, design
describing these dependences. With these data, the initial
and parameters of these microsensors are published in the
carrier concentration in Te-doped GaAs can be taken into
EUROSENSORS_XI Conference Proceedings w7x.
account, and under neutron irradiation with the fluence of
To obtain III–V semiconductor microcrystals-based
10 14 n cmy2 this concentration will not be changed more
magnetic field microsensors resistant to the radiation expo-
than 0.01%. This concentration is equal to 2.2 P 10 19 cmy3 .
sure, the metallurgical doping of III–V semiconductor
Investigation of carrier concentration dependence on the
microcrystals by the basic donor impurities Sn or Te
fast neutron fluence w5x in Sn-doped InAs makes it possible
during growth was used. The materials for the microsensor
to consider this material to be the most perspective one for
sensitive elements were obtained, the carrier concentra-
the fabrication of radiation resistant magnetic sensors.
tions of which Žand, consequently, the microsensor sensi-
When the fast neutron dose increases, the carrier concen-
tivities. were changed not more than 0.3 % 0.5% after the
tration is changed in a quite different way in comparison
fast neutron irradiation.
with that in GaAs: it approaches the saturation at the
For further improvement of microsensor radiation resis-
electron concentration of 3 P 10 18 cmy3 irrespective of its
tance, the complex doping by the basic dopant ŽSn, Te.,
initial value, as it is shown in Fig. 1. This behaviour can be
rare-earth elements ŽYb, Gd. as the additional dopants and
related to the mutually compensating donor–acceptor in-
the special extras ŽCr, Mn, Al. was used. Rare-earth
teraction between introduced radiation defects and charged
dopants are able to bind the oxygen which is always
impurities at this concentration.
contained in the III–V crystals, and disable the oxygen to
The effect of ionizing irradiation on InSb properties has
react with the initial radiation defects. In other cases, the
been studied in the most comprehensive way w6x. It has an
acceptor-type stable radiation defects would be formed w6x.
advantage when being used in magnetic sensors operating
Besides, rare-earth elements Yb and Gd are introduced in
at room temperature since the most radiation defects in
the sublattices of III and V group elements, having de-
InSb are annealed at the temperature below 300 K. Even
formed them since their covalent radiuses r Yb s 1.57 nm,
disordered areas are unstable at room temperature, there-
rGd s 1.62 nm are much more than that of the binary
fore they have an insignificant influence on electrical
compound components rGa s 1.25 nm, r In s 1.50 nm, rAs
properties. Thus, this semiconductor material is the most
s 1.21 nm. Such deformed regions of III–V crystal are the
capable one of self-remedying radiation damages and fast
effective drains of the radiation defects. Special extras Žfor
restoring its electric properties at room temperature. Under
instance Al. encourage the dissociation process of unstable
fast neutron irradiation, the InSb carrier mobility decreases
solid solutions of the background impurities Žcarbides,
because of additional scattering in lattice defects, but the
silicides, oxides. and enhance the radiation resistance of
carrier concentration is changed less.
the main material. All that enabled us to increase the
resistance of magnetic field microsensors to the radiation
exposure by 3–10 times.
The next step is the subsequent nuclear doping of the
samples obtained by means of the metallurgical doping.
The semiconductor crystal growth technology with the
reduced contents of oxygen in the initial material is also a
perspective one.

3. Studies and results

For sensors intended for use under the radiation condi-

Fig. 1. Charge carrier concentration dependence on fluence of reactor fast
neutrons for InAs crystals. n o , cmy3 : 1—2P10 16 ; 2—8.4P10 17 ; 3—2.1P
10 18 ; 4—2.0P10 19 .
tions of charged particle accelerators, the main attention
should be paid to the fast neutron irradiation which causes
the most remarkable defects in the materials of semicon-
ductor devices.
Investigations were carried out on the Pulsed Fast Reac-
tor IBR-2 in the Joint Institute for Nuclear Research
154 I. BolshakoÕar Sensors and Actuators 76 (1999) 152–155

Table 1
Electron concentration and sensitivity change in InSb-based microsensors with the initial concentration of n s Ž1 % 3. P 10 17 cmy3 after the fast neutron
irradiation Žthe supply current of 10 mA.
No. Before irradiation After irradiation Changes after irradiation
Relative Hall Relative Hall Carrier Sensitivity
error voltage error voltage concentration dKB, %
Cp, % UH0 , mV Cp, % UH0 , mV dn, %
1 564-12 0.015 0.6454 0.139 0.6431 0.34 y0.34
2 564-8a 0.028 2.7367 0.005 2.7362 0.02 y0.02
3 564-8b 0.026 2.1471 0.002 2.1416 0.26 y0.25
4 564-9b 0.006 1.8537 0.029 1.8538 0.00 0.00
5 564-9c 0.033 1.8116 0.080 1.8108 0.04 y0.04
6 575-3a 0.004 1.0126 0.149 1.0094 0.31 y0.31
7 576-3 0.004 1.1465 0.074 1.1461 0.04 y0.04
8 564-10 0.004 3.1863 0.012 3.1873 y0.03 0.03
9 564-11 0.026 2.0585 0.010 2.0590 y0.02 0.02

ŽDubna, Moscow reg., Russia.. The neutron energy was
0.1 % 13 MeV, fluence up to 10 14 n cmy2 , the irradiation
temperature 258C.
The radiation resistance estimation was based on the
determination of the electron concentration change after
the irradiation. For that purpose, the high accuracy of Hall
voltage measurements before and after the irradiation
should be provided and all conditions of experiment should
be maintained. That is why the constant magnetic measure
was located inside the thermostat where the temperature of
308C was kept up with the accuracy of 0.18C; the supply
current was maintained with the accuracy of "0.005%;
the change of Hall voltage and current through the sensor
was realized by the comparator P3003 of 0.00005 accuracy
class.
The relative error Cp of the Hall voltage change deter-
mination Žand, consequently, the sensor sensitivity. by the
results of three measurements does not exceed "0.04%.
Two sets of magnetic microsensors based on InSb and
InAs microcrystals were irradiated by fast neutrons, sev-
eral dozens of samples in each of the sets. In both cases,
measurements were carried out after the month since the
irradiation.
In the first set, such samples were studied sensitive
elements of which were fabricated by means of simple
metallurgical doping by only one donor impurity Sn or Te.
Studies have shown that the best result was obtained for
the InSb-based samples, sensitivity changes of which after
the fast neutron irradiation were equal to 0.3 % 0.5%.
In the second set, such samples were studied sensitive
elements of which were fabricated by means of complex
metallurgical doping: in addition to the basic donor dopant
Sn or Te, rare-earth elements Yb or Gd and special extras
Cr, Mn or Al were introduced. The results of investiga-
tions for nine InSb-based samples are given in Table 1.
Analysis of the results has shown that the fast neutron
irradiation of InSb-based samples with the initial concen-
tration Ž1 % 3. P 10 17 cmy3 follows the concentration in-
crease Žand sensitivity decrease. in the 0.12% on the
average and does not exceed 0.3%. Here, for six from nine
studied samples, the sensitivity change does not exceed the
change determination error "0.04%. For InSb-based mi-
crosensors with the electron concentration of Ž1 % 3. P 10 18
cmy3 , the mean sensitivity change at the same irradiation
conditions is equal to 0.55%, for GaAs epitaxial layers
with the initial concentration of 10 18 cmy3 this change is
equal to 0.2% on the average. The wider spread of the
results for InAs-based samples is related to the different
rates of crystal perfection and requires additional investiga-
tions.
4. Conclusions
By means of complex metallurgical doping of III–V
semiconductor materials, one may significantly improve
the resistance of the microsensors based on the materials to
the radiation exposure.
For 60% of studied InSb-based samples with the carrier
concentration n s Ž1 % 3. P 10 17 cmy3, the sensitivity
change after the fast neutron irradiation did not exceed its
determination error "0.04% at the mean value 0.12% for
the whole set of samples. That is why the investigations
for further improvement of radiation resistance should be
carried out in two directions: enhancement of the measure-
ment accuracy and the technological advancement of the
doping of semiconductor materials for microsensors with
the following nuclear doping.
Acknowledgements
These studies are supported by the Science and Tech-
nology Center in Ukraine ŽProject a320.. The author also
thanks N. Zamiatin and V. Makoveev for help in discus-
sion of the results.
 I. BolshakoÕar Sensors and Actuators 76 (1999) 152–155
References
w1x Technical Proposal, CERNrLHCCr94-38 Ž1994..
w2x ATLAS Collaboration, Technical Proposal, CERNrLHCCr94-43
Ž1994..
w3x U.V. Borcke, H.H. Cuno, Feldplatten und Hallgeneratoren Eigen-
schaften und Anwendungen, Siemens, Berlin Ž1985. 35–36.
w4x N. Yarmoluk, V. Vigdorovich, N. Kolin, V. Osuensky, V.
Kharchenko, L. Kholodny, Effect of fast neutron irradiation on
properties of GaAs doped by various impurities, Semiconductor
Physics and Technology 14 Ž7. Ž1980. 1311–1314.
w5x N. Kolin, V. Osvensky, N. Rytova, E. Yurova, Electrical properties of
indium arsenide irradiated with fast neutrons, Physics and Chemistry
of Material Processing, No. 6 Ž1986. 3–8.
155
w6x F.I. Zaitov, F.K. Isaev, A.Y. Polyakov, A.V. Kuzmin, Effect of
penetrating irradiation on properties of indium antimonide and ar-
senide, Elm, Baku Ž1984. 205.
w7x I. Bolshakova, Magnetic microsensors: technology, properties, appli-
cation, Sensors and Actuators A 68 Ž1998. 282–285.
Inessa Bolshakova received her BSc in Semiconductor Physics from
Lviv State Franko University, and her PhD from the Lviv Polytechnical
State University. She is currently working as a head of the Magnetic
Sensor Laboratory within the Lviv Polytechnical State University. Her
scope of interests includes technologies of semiconductor crystal growth
and development of magnetic microsensors.