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Electrocrystallization and
electrochemical control of crystal
growth: fundamental considerations
and electrodeposition of metals
Oxdlrurfl c :
I
O x d Ibulk1
H 2 0 + H, + $ O z .
(ii) Chemical changes which modify the electrolyte
(3)
1o d r o r p t ion
Oxd lrurf 1
composition, e.g. the localized generation of hydroxyl
ions due to oxygen reduction
0 , + 2 H 2 0 + 4e- + 4 0 H -
1 I
(4)
\ f electron t r n n r f e r
or hydrogen evolution
Red (surf I
2H+ + 2e- + H,. (5)
! s u r f a c e diffusion
Redirurf I
(iii) Active dissolution of a surface, which may form
-
soluble or insoluble species, e.g. in the case of nickel
Ni - 2e- Ni2+ (6)
nucleation & growth
J Ni + Z H 2 0 - 2e- + Ni(OH), + 2 H + . (7)
Inass
Redlrurfl - - --
tronrpert
3 Red I b u l k 1
(iv) Direct deposition of a new surface phase, as in
the electrodeposition of metals, e.g.
Figure 1. Steps involved in the process of Cu2+ + 2e- + Cu. (8)
electrocrystallization.The cathodic reaction,
Oxd + m-+ Red is considered schematically. (v) Transformation of a surface phase; e.g. at the
positive pole of a lead-acid battery, the simplified reac-
tion is
21 8
Electrocrystallization
MurW wmei
(4
0' E3
@
0 e c
6N- I=O
Electrode [b
@
50luofed
0 onion
@
1 3 = IL>l2>l1>O
0 @ @ (b)
E) 0
0 6, I
- P0,enll.l
--
4, p l o w I p 8 i l i o n of ~ l o i e s 1opprmch for
COmpOct
toyer
Diffuse layer
Solvoted
COfiO"
cation)
r Yb
-
_ _ _ _ _JPr---'_ _ _ _ _ ~ __..--------
+m-
4> -
(4
4s
r- 0
1.0 2.0 3.0 dP,
+; -0IOnc
4.0
Xinm
5.0 0 I
Flgure 2. Electrolyte layers near the electrode surface. (a) The electrical double layer and the resulting potential field
(caused by charge separation). The case of a negatively charged surface is taken. The q 2 plane is the 'outer Helmholtz
plane'. (b) The concentration boundary layer (arising from diffusion).The depletion of reactant concentration with distance
from the electrode surface is considered. Assumption of a linear profile enables the Nernst diffusion layer thickness, SN to be
defined. (c) The fluid boundary layer (due to fluid shear and flow development). a,, is the Prandtl (hydrodynamic)boundary
layer thickness.
(vi) Roughened surfaces may give rise to electro- points of view [l,2,7-131. Such studies have greatly
catalysis, enhanced surface area or improved mass contributed to our understanding of direct elec-
transfer effects. trocrystallization, including adsorption, nucleation and
(vii) The localized potential and current on the growth processes.
electrode may change the morphology, chemical com- The linear rate of electrocrystallization, U , is
position or phase composition of the products. directly related to the current density, j , according to
(viii) Several competitive electrochemical reactions the expression
may be possible. U = jVm/nF (10)
(ix) Time-dependent effects may be experienced. where V,,, is the molar volume and F is the Faraday
These considerations lead to the recognition that the constant. This relationship shows the importance of the
reaction environment is extremely important. This current density distribution. High localized values will
includes the nature and state of the electrode, the elec- lead to a higher rate of growth, a different growth form
trolyte composition, temperature and flow effects [ 6 ] . or the incidence of a side reaction.
The amount of deposited metal per unit area is the
ratio of the mass per unit area to the molar mass
2. Electrodeposition of metals m = w/M (11)
and is given by Faraday's laws as
This is the most extensively studied field in electro- m = q/nF (12)
crystallization, from both the theoretical and practical where q is the charge density at the electrode surface,
21 9
F C Walsh and M E Herron
'adotom'
I@
cluster
II rurfote
diffusion
+2Ld3
growth
growth
I hemispherical
6
.
centres pyramidal
dendritic
220
Electrocrystallization
There are two obvious limits to this expression. If Mn2+ + 2e- --* Mn (24)
k,f % 1 , then exp(-k,f)+ 0 and N , = N o , i.e. the num- are shown in figure 4(a). The curves show the response
ber of nucleation sites remains constant at its initial of a static vitreous carbon electrode to a cathodic
value, This is often referred to as instantaneous potential step from -1.30 V SCE (where negligible reac-
nucleation [14]. On the other hand, when kat is very tion occurs) for 4 s to a potential in the range -1.63 V
small, exp(-k,f) 2 1 - k,t and 1 - exp(-k,?) = k,f so to -1.67 V. Following a very brief initial spike due to
that N, = Nok,t or N, = k;t, where k: is a modified double-layer charging, the current density rapidly
nucleation rate constant. The latter case is known as drops to a low value (approximately 2 mA cm-') then
progressive nucleation [14]. In the absence of mass becomes progressively more negative with time. At
transport restrictions the overall current density at time sufficiently long times, the current density tends to a
f is given by [9]
constant, steady state value. The application of a more
negative potential, i.e. a greater overpotential, pro-
duces a faster increase of current, a larger steady state
where k is a modified rate constant, A, is the active value and a shorter transition time to the plateau
area of a single nucleus and U, = dN/df is the rate region.
of increase in the number of nuclei per unit time. These current density transients are characteristic
Instantaneous nucleation is most likely to occur at high of nucleation and phase growth of the deposit on the
overpotentials due to the increased probability of a inert carbon surface. In the present case, hydrogen
high number of nucleation sites per unit electrode area. evolution occurs as a secondary reaction on the
Under these conditions, equation (18) becomes deposited manganese. However, the partial current
density for this reaction merely amplifies the current
j = kA(f)No (19) density response without changing its shape. The data
while for progressive nucleation [17] may be analysed by plotting the increase in current
j = kAZ(t)No. (20) density vs the square of the time interval ( t - t ) 2or
In both cases, the growth of three-dimensional nuclei (as shown in figure 4(b)), (j- jmin)'I2 versus t - r. The
221
F C Walsh and M E Herron
linear dependence at high overpotentials indicates niques have been employed which include one or more
instantaneous nucleation according to equation (22), of the following parameters under controlled con-
followed by three-dimensional growth under charge centration and fluid velocity conditions:
transfer control. The relatively small dependence of
the steady state current density upon overpotential may (i) Current at a controlled potential (the potentio-
suggest that overlap of growth centres and formation static technique) [20, 211.
of a continuous layer are followed by a thickening (ii) Electrode potential, under constant current
process which is partially mass transport controlled. (galvanostatic) control [18, 19, 22, 231.
This approach may be readily extended to the con- (iii) Surface morphology, as revealed by, for
sideration of diffusion-controlled nucleation kinetics example, optical microscopy or scanning electron
and the effects of overlap [15, 161. However, such microscopy [18, 241.
simple electrochemical measurements should be comp- (iv) Surface roughness, typically measured by a
lemented by structural (e.g. microscopic) studies to stylus traversing profile meter [24, 251.
confirm the prevalence and size of nuclei and to exam- As an illustration, the development of surface rough-
ine the geometry of growth. ness during copper deposition from an acid sulphate
So far, the case of short-term, charge-transfer-con- solution (1.5M H2SO4) may be considered. Such
trolled nucleation has been considered. There are two studies have been described [16] using potentiostatic
related consequences as the overpotential is increased, control of a rotating cylinder electrode (RCE) at a tem-
i.e. as the potential is made more negative (figure 5). perature of 22°C (figure 6).
Both the kinetics and the deposit morphology change. The active surface for these studies was a copper
The current density increases due to the faster rate foil which had been preplated with a compact copper
of charge transfer, according to Tafel kinetics as an
approximation
jcr = i oexp(-Lu,nFq/RT) (25)
where j o and aCare characteristic kinetic parameters
known as the exchange current density and the
.
.
A
>
..
,
:
.
f:a,,,"uLc
r...
Llall>,c,
...r . : ....
C~,C,,,CLC,,~.
*.
A 5
.L.
LIIG
........-~....:^,
*-wG,~'"LcL1L'"'
222
Electroctystallization
70 i 6
60
50
40
30
20
10
0
0 0.1 0.2 0.3 0.4 0.5 0.6 O.? 00
-E /V vs SCE
223
F C Walsh and M E Herron
120 10 70 I I I
-E/V vrSCE
100 8 60 - 0.300
0.600
80
6 0.550
60
L
LO 0.500
2
20
0 0 0.450
0 LO 80 120 160 ZOO
0.350
t/min o i 10.300
0 LO 80 120 160 200
t p i n
Figure 9. Potentiostatic growth of copper deposits at
various cathode potentials, showing that a significant
roughness development only occurs at potentials
corresponding to partial or complete mass transport
control. Other conditions as in figure 7
20
16
16
70 t -I6
16
12
10
224
Electrocrystallization
References
225