MITSUBISHI IGBT MODULES

CM100TU-24F
HIGH POWER SWITCHING USE

CM100TU-24F

¡IC ................................................................... 100A

¡VCES ......................................................... 1200V
¡Insulated Type
¡6-elements in a pack

APPLICATION
General purpose inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

107
4–φ5.5
90 ±0.25
23 MOUNTING HOLES (4)
12 12
3.75

CM
N P
17

11 21.7 11 21.7 11 14.4

GuP G E G E G E GuN
EuP EuN
GvN
80 ±0.25

48.5

GvP
102

EvP EvN
GwP GwN
0.5

EwP G E G E G E
EwN
3.75

U V W

12 12 12 +1
23 23 0.8 29 –0.5
5–M5NUTS
11 21.7 11 21.7 11
Tc measured point 2.8 Tc measured point
4
P
7.1

8.1

G UP G VP GWP

RTC RTC RTC

26

LABEL EUP
U
E VP
V
E WP
W

GUN GVN G WN

RTC RTC RTC

EUN E VN E WN
N

CIRCUIT DIAGRAM

Aug. 1999
 MITSUBISHI IGBT MODULES

CM100TU-24F
HIGH POWER SWITCHING USE

MAXIMUM RATINGS (Tj = 25°C)

Symbol Parameter Conditions Ratings Unit
VCES Collector-emitter voltage G-E Short 1200 V
VGES Gate-emitter voltage C-E Short ±20 V
IC TC = 25°C 100 A
Collector current
ICM Pulse (Note 2) 200
IE (Note 1) TC = 25°C 100
Emitter current A
IEM (Note 1) Pulse (Note 2) 200
PC (Note 3) Maximum collector dissipation TC = 25°C 500 W
Tj Junction temperature –40 ~ +150 °C
Tstg Storage temperature –40 ~ +125 °C
Viso Isolation voltage Main terminal to base plate, AC 1 min. 2500 V
Main Terminal M5 2.5 ~ 3.5 N•m
— Torque strength
Mounting holes M5 2.5 ~ 3.5 N•m
— Weight Typical value 680 g

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
ICES Collector cutoff current VCE = VCES, VGE = 0V — — 1 mA

VGE(th) Gate-emitter threshold voltage IC = 10mA, VCE = 10V 5 6 7 V

IGES Gate leakage current VGE = VCES, VCE = 0V — — 20 µA

Tj = 25°C — 1.8 2.4
VCE(sat) Collector-emitter saturation voltage IC = 100A, VGE = 15V V
Tj = 125°C — 1.9 —
Cies Input capacitance — — 39
VCE = 10V
Coes Output capacitance — — 1.7 nF
VGE = 0V
Cres Reverse transfer capacitance — — 1.0
QG Total gate charge VCC = 600V, I C = 100A, VGE = 15V — 1100 — nC
td(on) Turn-on delay time — — 100
tr Turn-on rise time VCC = 600V, IC = 100A — — 50
ns
td(off) Turn-off delay time VGE1 = VGE2 = 15V — — 400
tf Turn-off fall time RG = 3.1Ω, Inductive load switching operation — — 300
trr (Note 1) Reverse recovery time IE = 100A — — 150 ns
Qrr (Note 1) Reverse recovery charge — 4.1 — µC
VEC(Note 1) Emitter-collector voltage IE = 100A, VGE = 0V — — 3.2 V
Rth(j-c)Q IGBT part (1/6 module) — — 0.25
Thermal resistance*1
Rth(j-c)R FWDi part (1/6 module) — — 0.35
°C/W
Rth(c-f) Contact thermal resistance Case to fin, Thermal compoundapplied*2 (1/6 module) — 0.09 —
Rth(j-c’)Q Thermal resistance Tc measured point is just under the chips — — 0.18✽3
RG External gate resistance 3.1 — 31 Ω
Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.

Aug. 1999
 MITSUBISHI IGBT MODULES

CM100TU-24F
HIGH POWER SWITCHING USE

PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL)
200 3

SATURATION VOLTAGE VCE (sat) (V)

Tj = 25°C 9.5 VGE = 15V
180
COLLECTOR CURRENT IC (A)

VGE = 20V Tj = 25°C

2.5
160 Tj = 125°C

COLLECTOR-EMITTER
15
140 11 9
2
120 10

100 1.5
8.5
80
1
60
40 8 0.5
20
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 40 80 120 160 200

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION FREE-WHEEL DIODE

VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
5 103
SATURATION VOLTAGE VCE (sat) (V)

Tj = 25°C 7 Tj = 25°C
5
EMITTER CURRENT IE (A)

3
4
COLLECTOR-EMITTER

102
3 7
5
IC = 200A 3
2
2 IC = 100A
101
7
IC = 40A 5
1
3
2

0 100
6 8 10 12 14 16 18 20 0.5 1 1.5 2 2.5 3 3.5

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

CAPACITANCE–VCE HALF-BRIDGE
CHARACTERISTICS SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
102 103
7 7
CAPACITANCE Cies, Coes, Cres (nF)

5 5 tf
3 Cies 3 td(off)
SWITCHING TIMES (ns)

2 2

101 102
7 7 td(on)
5 5
3 3 tr
2 2
Conditions:
100 101 VCC = 600V
7 Coes 7
5 5 VGE = ±15V
3 RG = 3.1Ω
3 Cres
2 2 Tj = 125°C
VGE = 0V Inductive load
10–1 –1 100 1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 102 2 3 5 7 103

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

Aug. 1999
 MITSUBISHI IGBT MODULES

CM100TU-24F
HIGH POWER SWITCHING USE

REVERSE RECOVERY CHARACTERISTICS TRANSIENT THERMAL

OF FREE-WHEEL DIODE IMPEDANCE CHARACTERISTICS
(TYPICAL) (IGBT part & FWDi part)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
REVERSE RECOVERY CURRENT lrr (A)

103 101

THERMAL IMPEDANCE Zth (j–c) (°C/W)

7 IGBT part:
REVERSE RECOVERY TIME trr (ns)

7 5 Per unit base = Rth(j–c) = 0.25°C/W

3 FWDi part:

NORMALIZED TRANSIENT
5
2 Per unit base = Rth(j–c) = 0.35°C/W
3 100
7
2 5
3 3
2 2
102 10–1 10–1
Irr 7 7
7 5 5
trr 3 3
5 Conditions:
VCC = 600V 2 2
3 VGE = ±15V 10–2 10–2
7 7
RG = 3.1Ω 5 5
2 Single Pulse
Tj = 25°C 3 3
Inductive load 2 TC = 25°C 2
101 0 10–3 10–3
10 2 3 5 7 101 2 3 5 7 102 10–5 2 3 5 710–4 2 3 5 7 10–3

EMITTER CURRENT IE (A) TMIE (s)

GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 100A
GATE-EMITTER VOLTAGE VGE (V)

18
16
14
VCC = 400V
12
VCC = 600V
10
8
6
4
2
0
0 500 1000 1500

GATE CHARGE QG (nC)

Aug. 1999