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Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) - 100 Available
• Repetitive Avalanche Rated
RDS(on) () VGS = - 10 V 0.20 RoHS*
• P-Channel
Qg (Max.) (nC) 61 COMPLIANT
• 175 °C Operating Temperature
Qgs (nC) 14
• Fast Switching
Qgd (nC) 29
• Ease of Paralleling
Configuration Single
• Simple Drive Requirements
S
• Compliant to RoHS Directive 2002/95/EC
TO-220AB
DESCRIPTION
G Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
S The TO-220AB package is universally preferred for all
D
G D commercial-industrial applications at power dissipation
P-Channel MOSFET levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
IRF9540PbF
Lead (Pb)-free
SiHF9540-E3
IRF9540
SnPb
SiHF9540
102 VGS
Top - 15 V
- 10 V
- 8.0 V
- ID, Drain Current (A)
101
101
- 4.5 V
100 101 4 5 6 7 8 9 10
91078_01 - VDS, Drain-to-Source Voltage (V) 91078_03 - VGS, Gate-to-Source Voltage (V)
3.0
VGS ID = - 19 A
Top - 15 V VGS = - 10 V
- 10 V 2.5
- 8.0 V
- ID, Drain Current (A)
- 7.0 V
- 6.0 V 2.0
(Normalized)
- 5.5 V
- 5.0 V
Bottom - 4.5 V 1.5
101 1.0
- 4.5 V
0.5
20 µs Pulse Width
TC = 175 °C
0.0
100 101 - 60- 40 - 20 0 20 40 60 80 100 120 140 160 180
91078_02 - VDS, Drain-to-Source Voltage (V) 91078_04 TJ, Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, TC = 175 ° C Fig. 4 - Normalized On-Resistance vs. Temperature
3000
VGS = 0 V, f = 1 MHz
2000
101
175 °C
Ciss 25 °C
1500
1000
Coss
100
500
Crss
VGS = 0 V
0
100 101 0.0 1.0 2.0 3.0 4.0 5.0
91078_05 - VDS, Drain-to-Source Voltage (V) 91078_07 - VSD, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 103
ID = - 19 A Operation in this area limited
- VGS, Gate-to-Source Voltage (V)
5
by RDS(on)
VDS = - 80 V 2
16
- ID, Drain Current (A)
VDS = - 50 V 102
5
VDS = - 20 V 100 µs
12 2
10 1 ms
5
8 10 ms
2
1
4 5 TC = 25 °C
For test circuit TJ = 175 °C
2
see figure 13 Single Pulse
0 0.1
2 5 2 5 2 5 2 5
0 10 20 30 40 50 60 0.1 1 10 102 103
91078_06 QG, Total Gate Charge (nC) 91078_08 - VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
RD
VDS
VGS
D.U.T.
RG -
+VDD
20
- 10 V
Pulse width ≤ 1 µs
16 Duty factor ≤ 0.1 %
- ID, Drain Current (A)
12
Fig. 10a - Switching Time Test Circuit
8
td(on) tr td(off) tf
VGS
4 10 %
0
25 50 75 100 125 150 175
90 %
91078_09 TC, Case Temperature (°C)
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response (ZthJC)
1
D = 0.5
PDM
0.2
0.1 0.1 t1
0.05 t2
0.02 Single Pulse Notes:
0.01 (Thermal Response) 1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10
L IAS
VDS
Vary tp to obtain
required IAS
VDS
RG D.U.T
-
+ V DD
IAS VDD
- 10 V tp
tp 0.01 Ω
VDS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
2000
ID
EAS, Single Pulse Energy (mJ)
Top - 7.8 A
1600 - 13 A
Bottom - 19 A
1200
800
400
VDD = - 25 V
0
25 50 75 100 125 150 175
Current regulator
Same type as D.U.T.
QG 50 kΩ
- 10 V 12 V 0.2 µF
0.3 µF
QGS QGD -
D.U.T. + VDS
VG
VGS
- 3 mA
Charge
IG ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
- - +
Rg • dV/dt controlled by Rg +
• ISD controlled by duty factor “D” VDD
• D.U.T. - device under test -
Note
• Compliment N-Channel of D.U.T. for driver
VGS = - 10 Va
Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91078.
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE Xi’an
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