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Chinese Chemical Letters xxx (2017) xxx–xxx

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Chinese Chemical Letters


journal homepage: www.elsevier.com/locate/cclet

Review

Recent development of perylene diimide-based small molecular


non-fullerene acceptors in organic solar cells
Yuwei Duan, Xiaopeng Xu, Ying Li, Qiang Peng*
Key Laboratory of Green Chemistry and Technology of Ministry of Education, College of Chemistry, and State Key Laboratory of Polymer Materials Engineering,
Sichuan University, Chengdu 610064, China

A R T I C L E I N F O A B S T R A C T

Article history:
Received 30 June 2017 Recently, perylene diimide (PDI) derivatives were attractive as the electron-deficient acceptor materials
Received in revised form 27 July 2017 in non-fullerene organic solar cells since Tang first used a single PDI compound as the n-type
Accepted 14 August 2017 semiconductor to fabricate photovoltaic devices in 1986, which achieved a power conversion efficiency of
Available online xxx 1%. Beside the monomeric PDIs, the linear and three dimensional (3D) PDI-based small molecular
acceptors have also made great achievements with the power conversion efficiencies over 9.0% in single-
Keywords: junction polymer solar cells, and over 10.0% in tandem solar cells. The excellent device performance can
Organic solar cells be realized by forming suitable twisted structure, developing suitable donor materials and optimizing
Perylene diimide
device technologies. In this review, we summarize the recent development of PDI-based small molecular
Non-fullerene acceptor
non-fullerene acceptors in non-fullerene organic solar cells, including molecular design strategies and
Structure-property relationships
structure-property relationships.
© 2017 Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences.
Published by Elsevier B.V. All rights reserved.

1. Introduction scale production and purification. Therefore, non-fullerene accept-


ors (NFAs) have been put forward recently to overcome the
Organic solar cells (OSCs) have attracted considerable attention limitations of fullerene derivatives. With the rapid development in
because of their easy fabrication of low-cost, light-weight, flexible the past few years, the PCE of NFA-based OSCs have reached more
and large-area devices with a wet process, such as spin-coating and than 12%, which implied that NFAs can replace fullerene
roll-to-roll printing technologies, etc. [1,2]. Traditionally, the active derivatives as a new generation of efficient acceptor materials [9].
layer of OSCs consists of a polymer or small molecule as the donor Similar to donor materials, NFAs could also be divided into two
material and a fullerene derivative as the acceptor material, types: polymers (P-NFAs) and small molecules (SM-NFAs), which
respectively. In the past decades, high-performance donor should have the strong electron-deficient units in the conjugated
materials were deeply studied by fine-tuning the molecular and backbones. Some good candidates of P-NFAs were reported
electronic properties to match the requirements of fullerene typically with the acceptor building blocks of naphthalene diimide
acceptors well. The commonly used acceptor materials were (NDI), perylene diimide (PDI), B N bridged bipyridine (BNBP) and
mainly based on phenyl-C61-butyric acid methyl ester (PC61BM), so on [10–13]. In addition, PDI, NDI, fluoranthene-fused imide,
phenyl-C71-butyric acid methyl ester (PC71BM), indene-C60 diketopyrrolopyrrole (DPP), and 3,9-bis[2-(3-oxo-2-vinyl-2,3-
bisadduct (ICBA) and indene-C70 bisadduct (IC70BA), which had dihydroinden-1-ylidene)-malononitrile have also been used to
strong electron affinity, ultrafast photo-induced separation and design the high-performance SM-NFAs [14–17]. From the liter-
transfer and high isotropic electron mobility [3–6]. The power atures, PDI derivatives are the most popular acceptor materials,
conversion efficiency (PCE) of fullerene-based OSCs has already since Tang et al. reported the first non-fullerene OSC in 1986 using a
exceeded 10% both in single-junction and tandem cells [7,8]. single PDI derivative (PV) as the acceptor material, which exhibited
However, fullerene acceptors have some intrinsic drawbacks, such a relatively low PCE of 1% [18]. PDI has a large and rigid planar
as low absorption in the UV-visible region, difficult to modify their p-conjugated plane, leading to excellent structural stability, strong
chemical structures and energy levels, and expensive for large- electron-accepting ability and high electron mobility (>1 cm2 V1
s1) in their functional materials [19–21]. The structure of PDI can
be modified by introducing alkyl chains at the N-positions to
* Corresponding author. enhance the solubility and introducing aryl substituents at its
E-mail address: qiangpengjohnny@yahoo.com (Q. Peng). a/b-positions to adjust the electronic and optical properties.

http://dx.doi.org/10.1016/j.cclet.2017.08.025
1001-8417/ © 2017 Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences. Published by Elsevier B.V. All rights reserved.

Please cite this article in press as: Y. Duan, et al., Recent development of perylene diimide-based small molecular non-fullerene acceptors in
organic solar cells, Chin. Chem. Lett. (2017), http://dx.doi.org/10.1016/j.cclet.2017.08.025
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However, the device performance of PDI-based OSCs is still lagging monomeric PDI, linear PDI dimers, trimers and oligomers with/
behind that of fullerene-based counterparts, which is mainly without a conjugated bridge, and PDI trimers and tetramers with a
limited by its strong self-aggregation to form microscale or sub- 3D structure. We also highlighted different structural modification
microscale phase separation in its blend films. Many strategies effect on the inherent properties and the final device performance
have been used to resolve this issue. For monomeric PDI of PDI derivatives, which would help us to understand deeply the
derivatives, introducing aryl substituents at the a/b-positions structure-property relationships of PDI-based SM-NFAs for realiz-
would break the self-aggregation to some extent. For PDI dimers ing highly efficient OSCs. The chemical structures of the related
with a conjugated bridge, variable core units, such as benzene, donor materials are listed in Fig. 1.
thiophene, selenophene and their fused structures, were inserted
between two PDI groups to form a twisted conformation and 2. Monomeric PDI derivatives as the acceptors
suppress the self-aggregation of PDI efficiently. Another way to
suppress the self-aggregation of PDI is to develop three- In fact, PDI was first used as an acceptor material in OSCs in
dimensional (3D) molecular structures. For example, Zhan et al. 1986 by Tang et al. [18]. Double-junction OSCs fabricated with PV as
reported a star-shaped PDI acceptor of S(TPA-PDI), which exhibited the acceptor layer and copper phthalocyanine (CuPc) as the donor
a quasi-3D nonplanar structure and isotropic optical and charge layer had achieved a PCE of 1%. As mentioned above, the serious
transfer properties [22]. By using this design strategy, more and self-aggregation of PDI induced the low efficiency in that work. In
more 3D high-performance PDI derivatives have pushed forward 2000, Dittmer et al. used MEH-PPV as the donor material and a
the PCEs of NFA-based OSCs to over 9% [23–25]. soluble PDI as the electron acceptor to fabricate OSC devices for
Here, we review the research activities of PDI-based small exploring the formation of crystal network [26]. PDI was blended
molecular acceptors for OSC applications, by the sequence of later with HBC-PhC12, delivering a higher PCE of 1.95% with a short-

Fig. 1. Chemical structures of the related donor materials in this review.

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organic solar cells, Chin. Chem. Lett. (2017), http://dx.doi.org/10.1016/j.cclet.2017.08.025
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circuit current density (Jsc) of 7.07 mA/cm2, open-circuit voltage PPI. However, a thin ZnO layer was inserted between the active
(Voc) of 0.69 V and fill factor (FF) of 40% [27]. In 2009, Xie et al. layer and the top Al electrode, the corresponding PCE was elevated
reported another bulk-heterojunction (BHJ) OSCs using P3HT:PDI to 2.46%, which would thank for the enhanced light absorption
blend as the active layer, which exhibited a relatively low PCE of because of the optical interference between incident light and
0.25% due to the strong self-aggregation of PDI and unmatched reflected light at the Al electrode. The PCE was further increased to
energy levels between P3HT and PDI [28]. In 2013, Bazan et al. 3.17% when the device with the ZnO layer was annealed at 100  C
employed p-DTS(FBTTh2)2 as the donor material, which exhibited a for 5 min. Employing acetonaphthopyrazine dicarbonitrile as
good complimentary absorption with PDI, leading to a very broad functional moieties, the same group synthesized another sym-
coverage of visible spectrum within 300–800 nm [29]. Thus, the metrical PDI acceptor of PERI [41]. The maximum absorption of
PCE of 3.0% was finally obtained after device optimization. When PERI film peaked at 455 nm and the absorption onset was observed
adding the processing additive of DIO, the PCEs of p-DTS(FBTTh2)2: at 583 nm, corresponding to a large optical bandgap of 2.13 eV.
PDI devices were further elevated to 3.1% [30]. Subsequently, Zhan PERI:Se-SM devices showed a low PCE of 1.28%, which was
et al. optimized the D/A ratio of p-DTS(FBTTh2)2:PDI to 1.3:1, and improved to 3.88% when the devices were treated with the thermal
the much higher PCE of 5.13% was achieved [31]. Recently, annealing process. Kozma et al. reported three PDI acceptors of
Keivanidis et al. used PBDTTT-C-T as the donor material and PDI as PDI-SF, PDI-BSF and PDI-BT, with the conjugated bithiophene,
the acceptor material, the related OSCs showed a PCE up to 3.71% spirofluorene and bithiophene spirobifluorene groups at the bay
[32]. Yao et al. synthesized a series of monomeric PDI derivatives positions [42]. The OSC devices based on P3HT and PDI-SF showed
(O-PDI-O, B-PDI-O and B-PDI-B) by attaching the 2-methoxyle- the PCE of 1.58%, while the relatively lower PCE values of 1.18% and
thoxyl side chain and BDT unit in turn on the PDI skeleton [33,34]. 0.81% were achieved for the cases from PDI-BSF and PDI-BT. The
B-PDI-B exhibited a broad absorption ranging from 650 nm to reason was that the bithiophene units attached on the PDI
800 nm in solid state because of the photoinduced intramolecular skeletons in PDI-BSF and PDI-BT lowered the HOMO-LUMO energy
charge transfer (ICT) from the BDT segments to the PDI core. The gap and thus generated a spectral overlap between the acceptor
enhanced absorption promoted the usage of near IR photons. In and the donor materials. The chemical structures of monomeric
addition, the steric hindrance between the PDI and BDT units PDI acceptors are listed in Fig. 2.
formed a twisted structural conformation, which effectively
suppressed the aggregation tendency of PDI and resulted in a 3. Linear PDI derivatives as the acceptors
reduced domain size going from 0.5 mm to 20 nm. When using
P3HT as the donor material, B-PDI-B devices showed a PCE of 1.66%. 3.1. PDI dimers with a bridged core
Modification of PDI with aromatic groups at the bay positions
was another method to develop efficient monomeric PDI accept- Beside the monomeric PDIs, PDI dimers are also received wide
ors. Marks et al. synthesized a series of PDI derivatives, hexyl-PDI, attention as acceptor materials in OSCs. Two PDI units in PDI
phenethyl-PDI, and phenyl-PDI, which were substituted with dimers are often separated by the conjugated bridge to decrease
hexyl, phenethyl and phenyl at the 2,5,8,11-positions of PDI the self-aggregation of PDI backbone. Yao et al. reported a PDI
skeleton, respectively [35]. All the molecules exhibited slip- dimer of bis-PDI-T-EG bridged with an oligothienyl group [43].
stacking in the solid state, thus preventing the coupling necessary When blending with PBDTTT-CT donor and adding 5% of DIO
for rapid excimer formation. Although these materials underwent additive, bis-PDI-T-EG devices showed a PCE of 4.03% [33]. After
efficient charge separation, PBTI3T:phenyl-PDI had the matched that, the same group replaced the thiophene bridge with
energy levels, intermediate crystallinity and the optimized selenophene candidate, and synthesized the similar PDI dimer
domains. Geminate recombination was observed in phenyl-PDI of bis-PDI-Se-EG [44]. Also using the same polymer donor of
devices with the highest PCE of 3.67%. Sun et al. synthesized a PBDTTT-C-T, bis-PDI-Se-EG devices showed a comparable PCE of
twisted PDI monomer of TP-PDI, in which four phenyl groups were 4.01%. Later, they further improved the device performance by
appended at the bay positions of PDI skeleton [36]. TP-PDI optimizing the fabrication condition, such as adjusting the additive
exhibited a weak aggregation in the solid state, a broad but strong content, using the solvent vapor annealing (SVA) possess [45].
absorption in the visible region from 400 nm to 700 nm, and a deep Finally, the recombination of the devices was suppressed
LUMO level of 3.82 eV. The OSCs based on PTB7-Th:TP-PDI efficiently and the electron mobility was enhanced at the same
achieved a high PCE of 4.1% when adding 1% of CN as the additive. time, which promoted the PCE from 1.44% to 6.08%. Zhan et al. also
Zheng et al. reported a series of ortho-functionalized PDI acceptors reported a series of PDI dimmers (PnTP, n = 0–3) with the
of PDI-4Mes, PDI-4Th, PDI-2S-4Mes and PDI-2S-4Th by 1,4- oligothiophene as the separated bridge [46]. PnTP showed the
addition of aryl Grignard reagents, which provided a new avenue maximum absorptions within 538–570 nm in solution, which
to directly functionalize the 2,5,8,11-positions of PDI unit with would be enhanced and red-shifted with increasing the numbers
different aryl substituents [37]. The PTB7-Th:PDI-2S-4Th devices of the thiophene unit. P0TP exhibited the lowest HOMO (5.74 eV)
showed a PCE as high as 5.19%, that was a new record for single PDI and LUMO (3.84 eV) levels. The increase of thiophene numbers
acceptors in OSCs. With different functional groups of pyrene and could up-shift the HOMO and LUMO energy levels of these PDI
tert-butyl pyrene, Su et al. reported two SMAs of P1 and P2 [38]. dimers, which were attributed to the strong electron-donating
These two acceptors possessed a broad absorption covering the feature of the oligothiophene bridge. When blending P(0-3)TP with
wavelength range of 400–650 nm and a relatively high LUMO a low bandgap polymer donor of PBDTTT-C-T, the PSCs exhibited
energy level of 3.77 eV. When using PTB7 as the donor material, decreased device performance with increasing the number of
the PCE of the OSCs based on P2 was only 0.41%, while a higher PCE thiophene units. Thus, PCEs of 3.61%, 0.79% and 0.91% were
of 1.35% was obtained for P1 devices with the same D/A ratio (1:1). achieved for P1TP-, P2TP- and P3TP-based OSCs. Yan et al. reported
Sharma et al. synthesized a symmetrical perylene-anthracene two bithiophene-bridged PDI dimers (iMe2T2-PDI2 and oMe2T2-
diimide acceptor of P-A with the tert-butylphenoxy side chains at PDI2), on which two simple methyl groups were attached at
the 1,7-bay positions of PDI skeleton. A PCE of 2.85% was achieved different positions of thiophene banckbone [47]. The dihedral
when using BTD-TNP as the donor material [39]. By replacing angles between the two PDI planes were about 60 for i-Me2T2-
anthracene with pyrene, Sharma et al. reported a perylene–pyrene PDI2 and 90 for o-Me2T2-PDI2, which caused a smaller domain size
bisimide acceptor of PPI later [40]. A PCE was decreased to 1.87% of i-Me2T2-PDI2 blend than o-Me2T2-PDI2 counterpart when
when the blend ratio was optimized to be 1:3.5 for donor (T) and blending with the same polymer donor of PffBT4T-2DT. Therefore,

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Fig. 2. Chemical structures of the monomeric PDI acceptors.

i-Me2T2-PDI2 devices achieved a higher PCE of 4.1% than that of o- decreased recombination. Thus, the Jsc was increased from 1.54 mA
Me2T2-PDI2 devices (3.1%). Jung et al. reported two NF-NFAs of F2B- /cm2 to 7.68 mA/cm2 and the PCE was also elevated from 0.23%
T2PDI and T2PDI linked by the bridge of 2,5-difluorobenzene (F2B) to 3.89%. When fused with heterocycles at the bay positions of PDI,
or bithiophene [48]. Compared with T2PDI, F2B-T2PDI had a more such as furan, thiophene and selenophene, a series of non-planar
rigid core and enhanced molecular packing property. The fused PDI analogues of FPDI-F, FPDI-T, and FPDI-Se were prepared
fluorination down-shifted the energy levels to prevent back- by Jen’s group [54]. Compared to the non-fused counterparts, the
transfer of holes from the acceptor to the cathode and enhanced fused PDI dimers showed the reduced reorganization energy and
the complementary absorption with the donor polymer of PTB7- extended p-conjugation, which was helpful for exciton diffusion
Th. Because of the geometric and energetic effects from 2,5- and charge transfer. In addition, by changing the chalcogen atoms
difluorobenzene (F2B) moiety, the PCE of 5.05% was achieved for from S to O and Se, FPDI-F and FPDI-Se exhibited the similar
F2B-T2PDI-based devices, whereas that was 3.63% by using T2PDI. absorptions and energy levels with FPDI-T, while their molecular
Zhao et al. reported a series of PDI dimers with various arylene geometries could be optimized by varying the atomic size in the
linkers [49]. Using P3HT as the donor, the PCE of 2.35% was sequence of O < S < Se. With increasing the chalcogen atomic size
achieved for spirobifluorene-linked SF-PDI2. Subsequently, Yan (O < S < Se), the twist angles between two PDI planes would be
et al. employed SF-PDI2 as SM-NFAs and a novel polymer of enlarged from 15.8 (FPDI-F) to 24.4 (FPDI-T) and 27.2 (FPDI-Se).
PffBT4T-2DT as donor material to fabricate more efficient solar FPDI-T had a modest twist angle but balanced above mentioned
cells [50]. The resulting devices showed an impressively large Voc factors, resulting in the highest carrier mobilities and the best PCE
of 0.98 V and a high PCE of 6.3%. The Voc loss of this device was only of 6.72%. Chen et al. reported another SM-NFA of FITP, in which two
0.67 V, which was among the lowest values of Voc losses for OSCs. PDI units were fused with the indacenodithieno[3,2-b]thiophene
By fine-tuning the energy levels of polymer donors, the same group (IDTT) central core [55]. This fully fused backbone made FITP
synthesized a new polymer donor of P3TEA, which exhibited only possess superior charge carrier transfer property and elevated
0.05 eV LUMO energy level offset with SF-PDI2, giving rise to a high LUMO level. As a result, the OSCs based on FITP and PTB7-Th
Voc of 1.11 V and a low Voc loss of 0.61 V. Combining with the high Jsc exhibited a high PCE of 7.33% with a high Voc of 0.99 V. Yu et al.
of 13.27 mA/cm2 and an FF of 64.3%, the PCE was further elevated reported four PDI dimers of aPPID, aPBDT, bPPID and bPBDT,
to 9.5%, which is the best value for PDI-based single-junction OSCs which were linked by the core of pyrene diimide (PID) or benzo
[23]. To improve the light harvesting property, they used P3TEA: [1,2-b:4,5-b’]-dithiophene (BDT) at the ortho- or bay-position of
SF-PDI2 as the active layer and fabricated a homo-tandem device PDI skeleton, respectively [56]. Because of the good planarity and
with a mild thermal annealing treatment. The PCE was finally strong p-stacking feature of ortho-functionalized PDI, aPBDT and
improved to 10.8% with a high Voc of 2.13 V [51]. Choi et al. reported aPPID exhibited a strong aggregation tendency, which endowed
the M- and V-shaped PDI dimers of CP-M and CP-V with a non- these molecules with high electron mobility. When blending with
conjugated 1,1-diphenylcyclohexane bridge [52]. CP-V could mix PBT7-Th, the inverted OSCs achieved the PCE of 4.92% for aPBDT
well with PPDT2FBT and maintained the appropriate domains, and 3.61% for aPPID, which were 39% and 4% higher than those of
which could facilitate exciton dissociation/diffusion and provide the bPBDT and bPPID. At the same time, Welch et al. incorporated
suitable percolation pathways for charge transfer. Therefore, in thienoisoindigo (TII), diketopyrrolopyrrole (DPP) and isoindigo
comparison with CP-M cells, the CP-V devices displayed a better (ISI) to N-annulated PDI, and reported a series of PDI dimers of PDI-
performance with a PCE of 5.28%. DPP-PDI, TII-B, DPP-B and ISI-B [57,58]. It was found that the DPP-
Ph2a was a ring-fused compound with benzene as the central based acceptor of DPP-B outperformed the other derivatives,
core [53]. The ring-fusion resulted in increased electronic coupling demonstrating an energy loss of less than 0.6 eV and a promising
between the two PDI units, which could increase its electron efficiency of 4.1%. Blakey et al. synthesized a new PDI-thiazole-
mobility. The blend of Ph2a and PTB7-Th showed a significantly based NFA ((TsCDI)2T) with a thiophene bridge, by KOtBu-initiated

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aryl C-H iodination [59]. Using PTB7-Th as donor, the resulting photovoltaic performance [63]. The results indicated that the more
OSCs based on (TsCDI)2T showed a PCE of 4.7%. The chemical flexible and twisted structure of s-diPBI could disrupt the p–p
structures of linear PDI dimers with a bridged core are listed in stacking of PTB7-Th, leading to the lower electron and hole
Fig. 3. mobilities than those of PTB7-Th:PPDI. In addition, PPDI acceptor
could not only mix well with PTB7-Th, but also maintain
3.2. PDI dimers and trimers without a bridged core appropriate aggregation domains for more efficient exciton
dissociation and suitable percolation pathways for faster charge
In order to obtain the twisted conformation, two PDI units can transfer. Thus, the PCE of PTB7-Th:PPDI device was improved
be covalently linked by just a single carbon-carbon bond to afford finally to 6.41%. In order to improve the performance of PTB7-Th:s-
the PDI dimer of s-diPBI. Wang et al. first synthesized s-diPBI by the diPBI devices, an amine-functionalized PDI (PDIN) was also used as
one-step homocoupling of halogenated PDIs in the presence of the electron-transporting layer. PDIN possessed the respectable
copper powder as catalyst [60]. It showed a broad absorption in the charge-transporting properties and possible interfacial doping
range of 400 nm to 600 nm with a LUMO level was 3.91 eV. When capability to the PDI-based acceptors, which was positive for
blending with the donor of PBDTTT-C-T, the PCE was 3.63%. Hou improving the charge transport and extraction efficiency. There-
et al. replaced PBDTTT-C-T with PBDTBDD as the donor material, fore, the PCEs of PTB7-Th:s-diPBI devices were increased from
the PCEs could be improved up to 4.39% [61]. The better device 5.52% to 6.29% [64]. Li et al. introduced the cyan group onto PDI
performance of PBDTBDD:s-diPBI system was originated from the skeleton and synthesized a PDI dimer of SdiCNPBI, which exhibited
improved exciton dissociation efficiency, enhanced crystallinity a deep LUMO of 4.56 eV [65]. When using the PDPP2TzT and
and optimized nanophase separation. Based on the blend of PTB7- PDPP2Tz2T as the donors, the devices showed the relatively low
Th and s-diPBI, Jen et al. fabricated the inverted device configura- PCE of 1.4% for PDPP2Tz2T:SdiCNPBI and 0.72% for PDPP2TzT:
tion with a SAM-modified ZnO interface, the PCE was further SdiCNPBI, respectively.
elevated to 5.90% [62]. They also studied the molecular geometry Introduction of heteroatoms would enhance the intermolecular
effect of PDI dimers (s-diPBI and PPDI) on blend morphology and interactions through van der Waals and heteroatom-heteroatom

Fig. 3. Chemical structures of linear PDI dimers with a bridged core.

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interactions, which could improve the device performance of the derivatives (hPDI2-Pyr-hPDI2 and hPDI3-Pyr-hPDI3), which were
corresponding semiconducting materials based on fused or synthesized by fusing two electron-deficient PDI trimers with an
extended heteroarenes. Wang et al. modified s-diPBI by inserting electron-rich alkoxy-modified pyrene central core [72]. The
S or Se atoms in the bay positions and reported two novel NF-NFAs rigidity of the molecular backbone yielded a sharply red-shifted
of SdiPBI-S and SdiPBI-Se [66,67]. These molecules had a more absorption edge. The non-fullerene OSCs fabricated with hPDI2-
twisted molecular configuration and a higher LUMO level than s- Pyr-hPDI2 and hPDI3-Pyr-hPDI3 showed PCEs of 6.9% and 7.6%
diPBI. The PDI subunits in SdiPDI-S or SdiPDI-Se were almost without any optimization. Yang et al. reported two novel PDI
perpendicular to each other, with the dihedral angles of 80 and dimers (SdiPBI-BT and diPBI-BT), with fusing a thienobenzene unit
77, respectively. When blending with the wide bandgap polymer at the bay region of the PDI skeleton [73]. The resulting PDI dimers
of PDBT-T1, the devices showed PCEs of 7.16% and 8.4% for SdiPBI-S exhibited a higher-lying LUMO level and an extended conjugation
and SdiPBI-Se. Sun et al. used PBDTS-Se as the donor material and system. As a result, a PCE of 6.71% was achieved with a high Voc of
SdiPBI-S as the acceptor material to fabricate another high- 0.95 V, a Jsc of 10.31 mA/cm2 and a high FF of 68.7% from PDBT-T1:
performance device with a PCE of 8.22% [68]. Later, Welch et al. SdiPBI-BT devices.
found that incorporation of a nitrogen heteroatom (so called “N- Another effective method to disrupt the planarity and reduce
annulation”) at the bay position of PDI would increase structural the aggregation of the PDI derivatives is to link the corresponding
diversity through modulation of the N-R functional group, thus PDI subunits through the N-N bond at amide position [72–75].
allowing for the tailored self-assembly [69]. Through such N-alkyl Narayan et al. used TP as the acceptor material and PBDTTT-C-T as
chain modification, they reported a PDI dimer of S-diPDIN, which the donor material and reported the related non-fullerene OSCs
obtained a PCE of 3.13% when blended with PTB7. The PCE was with a PCE of 3%, which was 10-fold increase in Jsc in comparison
further increased to 5.54% and 7.55% by using another two with the counterpart based on monomeric PDI [75]. Hou et al.
excellent donor polymers of PTB7-Th and P3TEA, respectively. reported an N-N-linked PDI derivative (PPDI), which used C5H11
The adjacent PDI units could be fused with a two-carbon bridge, instead of C7H15 in TP [76]. Benefiting from the enhanced
which was first reported by Nuckolls’s group as the high- interchain p-p stacking of the polymer donor, the PBDT-TS1:PPDI
performance NFA materials. A series of helical PDI molecules blend showed a relatively higher and symmetric hole and electron
(hPDI1, hPDI3 and hPDI4) with different numbers of PDI units were mobility. Thus, a high PCE of 5.58% (certificated as 5.40%) was
synthesized for comparison [70,71]. All of them showed a relative obtained in the fabricated fullerene-free OSCs based on PBDTTS1:
high electron mobility, strong absorption within 350 nm and PPDI. Jen et al. recently also reported a high-performance OSCs
550 nm, good electron-accepting ability, and suitful LUMO level with a PCE of 6.41% by using PTB7-Th:PPDI as the active layer [62].
(ca. 4 eV). The strong aggregation of PDI backbone was efficiently Later, Hou et al. synthesized a SM-NFA of H-tri-PDI, which
suppressed due to their twisted molecular conformations. Thus, composed of three PDI units connected together via N-N linkage
the high PCEs of PTB7:hPDI1, PTB7-Th:hPDI3 and PTB7-Th:hPDI4 [77]. The PBDTTS1:H-tri-PDI devices showed a PCE as high as
devices were obtained as 5.21%, 7.9% and 8.3%, respectively. 7.25%, benefiting from the appropriate energy level alignment and
Subsequently, the same group reported two nanoribbon-like PDI the favorable morphology of the active layer, which was the

Fig. 4. Chemical structures of linear PDI derivatives without a bridged core.

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highest value in this type of PDI derivatives. The chemical together with suitable LUMO levels of about 3.8 eV. The
structures of linear PDI dimers without a bridged core are listed integration of selenophene onto TPH skeleton endowed TPH-Se
in Fig. 4. The photovoltaic parameters of the OSCs based on linear with a more distorted propeller configuration and a more compact
PDIs as the acceptors are also provided in Table 1. 3D network assembly because of the Se  O interactions. Using
TPH and TPH-Se as the acceptor materials, the related non-
4. Three-dimensional (3D) PDI derivatives as the acceptors fullerene OSCs showed the high PCEs of 8.28% and 9.28%,
respectively. The same group further employed TPH as the
4.1. 3D PDI trimers acceptor material to fabricate all small molecular OSCs using
DRCN5T as the donor material, which exhibited a PCE of 6.16% [80].
Apart from linear PDI acceptors, three dimensional (3D) PDI To study the length effect of branched alkyl side chain on the
SMAs linked with different cores have also been explored. Lin et al. photovoltaic performance of TPH, Wang et al. designed and
reported a star-shaped PDI trimer of S(TPA-PDI) with a triphenyl- synthesized a series of propeller-shaped triperylene hexaimides
amine (TPA) core [22]. S(TPA-PDI) had the isotropic optical and (TPH-4, TPH-5, TPH-6, TPH-7) as the NFAs for OSC applications
charge-transporting properties due to the sp3 hybrid orbital of [81]. The physical properties, thin-film microstructure, molecular
nitrogen atom of TPA. In addition, S(TPA-PDI) exhibited weak packing, charge transport and resulting photovoltaic properties of
molecular aggregation, a strong absorption in the visible region these materials have been systematically investigated in that work.
and appropriate energy levels, which could be matched well with When blended with the wide bandgap polymer donor of PDBT-T1,
the used low bandgap polymer donor of PBDTTT-C-T. A maximum the devices based on TPH-4, TPH-5 and TPH-6 showed the similar
PCE of 3.45% was then achieved based on PBDTTTC-T:S(TPA-PDI) device performance, however, OSCs based on TPH-7 with the
(1:1, w/w) blend adding 5% of DIO. By introducing S or Se- longest alkyl chain exhibited the highest PCE of 8.64%. Chen et al.
annulated PDI as the peripheral groups, Yang et al. synthesized two reported a simple PDI trimer of B(PDI)3 with a benzene ring as the
novel star-shaped SMAs of TPA-PDI-S and TPA-PDI-Se, the PCEs central core [82]. B(PDI)3 had a highly twisted molecular structure,
were further elevated to 6.10% [78]. Lu et al. also synthesized a TPA- which could help for reducing the strong aggregation of PDI units.
based acceptor of TPA(T-PDIEG)3, which showed edge-to-face type When B(PDI)3 was blended with PTB7-Th donor in OSCs, a good
of p-p stacking in the corresponding solid films. The PCE of 1.92% PCE of 5.65% was achieved. Our group reported a novel PDI trimer
was obtained by adding 3% of DIO when using PBDTTT-C-T:TPA(T- of Ta-PDI with an electron-withdrawing triazine as the central core
PDI-EG)3 as the active layer [79]. [25]. Compared with Ph-PDI with the benzene core, Ta-PDI had the
Wang et al. reported C3-symmetric PDI trimers of triperylene higher cryrtallinity as well as the more suppressed molecular
hexaimides (TPH) and selenium annulated triperylene hexaimides aggregation, yielding a much higher PCE of 9.15%. Recently, Chen
(TPH-Se), which consisted of three PDI subunits or selenium et al. reported two PDI trimers based on benzotrithiophene (BTT) as
annulated PDI subunits adjoined at a single benzene ring [24]. Both the core, connecting via either single bond (TriPDI) or ring-fusion
small molecules had a twisted three-bladed propeller configura- (Fused-TriPDI) approaches [83]. Compared to TriPDI, the fused
tion with the compact 3D network assembly. They also showed the TriPDI exhibited the good structural rigidity and planarity as well
broad and strong absorption in the region within 300–600 nm, as the effective conjugation along the whole molecular backbone.

Table 1
The photovoltaic parameters of the OSCs based on linear PDIs as the acceptors.

Acceptor Donor LUMO/HOMO (eV) Addictives D/A rato (w/w) Jsc (mA cm2) Voc (V) FF (%) PCE (%) Ref.
Bis-PDI-T-EG P3HT 3.84/5.65 CN 8% 1:1 2.89 0.59 44.8 0.76 [43]
bis-PDI-Se-EG PBDTTT-C-T 3.84/5.61 / 1:1 10.60 0.79 47.93 4.01 [44]
P1TP PBDTTT-C-T 3.72/5.66 / 1:1 7.78 0.89 52.1 3.61 [46]
i-Me2T2-PDI2 PffBT4T-2DT 3.57/5.82 / / 8.0 0.91 56 4.1 [47]
o-Me2T2-PDI2 PffBT4T-2DT 3.54/5.46 / / 6.80 0.89 51 3.1 [47]
SF-PDI2 P3TEA 3.6/6.0 / / 13.27 1.11 64.3 9.5 [51]
CP-M PPDT2FBT 3.85/5.92 DPE 3% 1:2 6.04 0.89 39.84 2.14 [52]
CP-V PPDT2FBT 3.98/6.16 DPE 3% 1:2 10.04 0.87 60.16 5.28 [52]
Ph2a PTB7-Th 4.03/6.36 DIO 1% 1:2.25 7.68 0.93 54.3 3.89 [53]
FPDI-T PTB7-Th 3.77/5.98 CN 2% 1:2 12.28 0.94 59.0 6.72 [54]
FITP PTB7-Th 3.75/5.48 CN 2% 1.2:1 13.24 0.99 56 7.33 [55]
aPBDT PTB7-Th 3.78/5.60 CN 5% 1:1.5 12.78 0.81 46 4.92 [56]
bPBDT PTB7-Th 3.76/5.64 CN 5% 1:1.5 9.83 0.81 44 3.53 [56]
PDI-DPP-PDI PTB7-Th 3.70/5.30 / 2:3 11.32 0.98 50.1 5.6 [57]
TII-B PTB7-Th 3.6/5.0 DIO 0.5% 1:1 1.09 0.93 34.2 0.4 [58]
DPP-B PTB7-Th 3.6/5.3 DIO 0.5% 1:1 5.98 0.97 50.3 2.9 [58]
ISI-B PTB7-Th 3.6/5.6 DIO 0.5% 1:1 6.97 1.03 36.7 2.6 [58]
SdiPDI PBDTTT-C-T 3.91/5.94 DIO 1.5% + CN 1.5% 2:3 10.58 0.73 46.8 3.63 [59]
SdiCNPBI PDPP2Tz2T 4.56/6.59 DIO 0.5% 2:3 5.50 0.77 34 1.4 [60]
SdiPDI-S PDBT-T1 3.85/6.27 DIO 0.75% 1:1 11.98 0.90 66.1 7.16 [66]
SdiPDI-Se PDBT-T1 3.87/6.09 DIO 0.25% 1:1 12.57 0.95 70.5 8.42 [67]
SdiPDI-S PBDTS-Se 3.85/6.27 DIO 0.5% 1:1 12.8 0.91 68.8 8.22 [68]
SdiPDI-N P3TEA 3.79/5.86 ODT 2.5% 2:3 11.03 1.13 61 7.55 [69]
hPDI1 PTB7-Th 3.77/6.04 DIO 1% + CN 1% 3:7 13.7 0.80 56 6.05 [70]
hPDI3 PTB7-Th 3.86/6.23 DIO 1% 1:1.5 14.5 0.80 67 7.9 [71]
hPDI4 PTB7-Th 3.91/6.26 DIO 1% 1:1 15.2 0.81 68 8.3 [71]
hPDI2-Pyr-hPDI2 PTB7-Th 3.73/5.80 / 2:3 14.3 0.83 58.1 6.9 [72]
hPDI3-Pyr-hPDI3 PTB7-Th 3.76/5.76 / 1:1 15.1 0.80 62.9 7.6 [72]
SdiPBI-BT PDBT-T1 3.67/5.79 DIO 0.2% 1:1 10.26 0.95 67.6 6.71 [73]
diPBI-BT PDBT-T1 3.75/5.48 DIO 0.5% 1.2:1 9.89 0.99 59.8 5.84 [73]
PPDI PBDT-TS1 3.86/5.90 / 1:1 12.51 0.82 53 5.40 [76]
H-tri-PDI PBDT-TS1 3.93/6.01 DPE 7% 1:1 16.52 0.732 60.03 7.25 [77]

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Therefore, TriPDI showed up-shifted energy levels, enhanced synthesize two novel PDI tetramers of tetra-PBI and tetra-PBI-S
absorption and charge mobility than TriPDI. The OSCs based on [89]. Compared with tetra-PBI, tetra-PBI-S had an appropriate
PTB7-Th:Fused-TriPDI blend showed a PCE of 6.19%, which was LUMO level, balanced carrier mobility and favorable phase
around three times higher than that of PTB7-Th:TriPDI devices. The separation when blended with PBDT-TS1, which made tetra-PBI-
chemical structures of 3D PDI trimers are listed in Fig. 5. S devices show a much higher PCE of 6.2% than that of tetra-PBI
devices (3.6%). Yan et al. further studied the structure-property
4.2. 3D PDI tetramers relationship of PDI tetramers by replacing TPC with tetraphenyl-
ethylene (TPE) and tetraphenylpyrazine (TPPz) and synthesized
The a-substituted PDI derivatives exhibited superior photovol- another two PDI derivatives of TPE-PDI4 and TPPz-PDI4 [90,91]. The
taic performance than the corresponding b-isomers because of results indicated that TPC-PDI4 had a more twisted configuration
their better planarity, which induced closer packing of p-conju- compared to TPE-PDI4. As a result, the device based on TPC-PDI4
gated backbone. Yu et al. reported a new a-substituted PDI showed an inferior performance (PCE = 4.3%) than that of TPE-PDI4
tetramer of TPBDT with a BDT-Th core, in which four PDI units (PCE = 5.5%). Therefore, increasing the twisting extent of the PDI
formed a cross-like molecular conformation [84]. The inverted molecules (from TPE-PDI4 to TPC-PDI4) would decrease the overall
non-fullerene OSCs based on TPBDT showed a high PCE of 8.47% device performance. Compared to TPE-PDI4, TPPz-PDI4 had a less
with the extraordinary large Jsc value (>18 mA cm2) by adding a crowded space, which made the twist extent of molecular
small amount of DPE as the co-solvent. On the other hand, backbone reduce further. Thus, OSCs fabricated with TPPz-PDI4
b-substituted PDI tetramer of bTPB6 with a BDT-Th core was also exhibited a higher FF and PCE (7.1%) than those of TPC-PDI4 and
reported by Yu’s groups [85]. Extending the conjugation of bTPB6 TPE-PDI4.
by fusing with the thiophene cycle, bTPB6-C possessed a more Cho et al. reported a novel 3D SM-NFA of SF-PDI4 based on a
rigid molecular geometry. The inverted OSCs based on bTPB6-C spirobifluorene (SF) core [92,93]. This highly twisted core could
and PTB7-Th exhibited the larger PCE of 7.69%, which was 31% suppress molecular aggregation of SF-PDI4 and facilitate excitation
higher than that of bTPB6-based devices. Wang et al. reported a PDI energy transfer. Thus, SF-PDI4 showed an intense UV–vis absorp-
derivative of 6T-PDI4 with a dendritic sexithiophene (6T) core [86]. tion band peaked at 531 nm, which complemented well with the
6T-PDI4 had a broad absorption spectra from 400 nm to 600 nm absorption bands of P4T2FBT and PV4T2FBT. Furthermore, the
and a LUMO level of 4.1 eV. Using PTB7-Th as the donor material, comparative study revealed that replacing P4T2FBT with
the 6T-PDI4 devices exhibited a PCE of 4.12%. PV4T2FBT could significantly increase the solar cell efficiency
Yan et al. reported a series of tetrahedron-shaped PDI tetramers due to the enhanced absorption and more favorable BHJ
(TPC-PDI4, TPSi-PDI4 and TPGe-PDI4) with the tetraphenylmethane morphology. The PV4T2FBT:SF-PDI4 devices had a higher Jsc of
(TPC), tetraphenylsilane (TPSi) and tetraphenylgermane (TPGe) 12.02 mA/cm2 with a reasonably high Voc and FF values, giving
central cores [87]. All of them had a sp3 atom in the middle section, rise to a higher PCE of 5.98%. Importantly, the PV4T2FBT:SF-PDI4
which led to a tetrahedron-shaped molecular configuration. The blend exhibited a well mixed interpenetrating BHJ morphology
results indicated that OSCs based on TPC-PDI4 and TPSi-PDI4 with well-defined nanophase separation, indicating that SF-PDI4
showed significantly better performance than TPGe-PDI4. The TPC- could formed an excellent 3D charge transport network for
PDI4 devices showed the highest PCE of 4.3% with an outstanding efficient OSCs. Huang et al. reported another PDI tetramer of P4M4,
Voc of 0.96 V. At the same time, Zhang et al. also used TPC as the whose devices based on PDBT-T1:P4M4 active layer showed a PCE
central core to link four PDI units and synthesized a 3D NFA of Me- of 5.71% [94]. Li et al. designed a 3D PDI derivative of PBI-pro using
PDI4. The solution-processed OSCs based on Me-PDI4 showed a porphyrin as the central core [83,95]. PBI-pro had three
PCE of 2.73% [88]. The TPC core was also used by Li’s group to characteristic absorption bands within 300–600 nm and 700–

Fig. 5. Chemical structures of three dimensional PDI trimers.

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800 nm, which could perfectly complement with the absorption large crystallites up to micrometer scale during the solution-
profile of the polymer donor of PBDB-T. The above advantages process. Many efforts for minimizing the domain size of PDI
facilitated a high PCE of 7.4% from the related OSCs. The chemical derivatives focused on three major strategies: (1) developing
structures of 3D PDI tetramers are listed in Fig. 6. The related monomeric PDIs by introducing large bulky groups at the imide
photovoltaic parameters of the OSCs based on 3D PDI trimers and position and the ortho or bay positions; (2) creating twisted PDI
tetramers as the acceptors are also provided in Table 2. dimmers by inserting spacers at the ortho or bay positions, or
directly correcting two PDIs at the imide position; (3) designing
5. Conclusion twisted PDIs with three dimensional (3D) molecular configu-
rations by different 3D central cores. Although creating twisted or
In this review, we briefly introduced the recent progress of non-planar geometries seems to be a successful design strategy
PDI-containing small molecules as the acceptor materials for non- for PDI-based acceptor materials, the reduced p-p stacking
fullerene OSCs. PDI derivatives are attractive alternatives to feature of PDI backbone will be induced by increasing steric
fullerenes because they have low-lying LUMO levels, high repulsion, which will thus weaken the electron-transporting
electron mobilities, easy modification of the frontier molecular capability of PDI unit to some extent. To tap into the potential of
orbital levels, inexpensive synthesis and purification on a large PDIs as the NFAs, the trade-off between ideal nanophase
scale. More importantly, they are chemically and environmentally separation and strong p-p stacking should be properly resolved.
robust (some cases have been used as automotive paint Many smart design strategies have already realized the high PCE
pigments). Regardless of above advantages, PDIs have historically over 9% in OSCs. However, there is still a large lifting space for
performed poor performance in BHJ solar cells. One of the main improving the device performance of PDI-based acceptor materi-
reasons is that PDIs are strongly aggregated in the solid state due als further. With the continued striving for understanding the
to their rigid molecular configurations, which will form seriously structure-property relationships, developing novel PDI-based

Fig. 6. Chemical structures of three dimensional PDI tetramers.

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Table 2
The photovoltaic parameters of the OSCs based on three-dimensional PDI trimers and tetramers as the acceptors.

Acceptor Donor LUMO/HOMO (eV) Addictives D/A rato (w/w) Jsc (mA/cm2) Voc (V) FF (%) PCE (%) Ref.

S(TPA-PDI) PBDTTT-C-T 3.70/5.40 DIO 5% 1:1 11.92 0.88 33.6 3.32 [22]
TPA-PDI-S PDBT-T1 3.79/5.66 DIO 0.5% 1:1 9.42 1.0 59 5.66 [78]
TPA-PDI-Se PDBT-T1 3.90/5.61 DIO 0.5% 1:1 10.24 1.0 58 6.10 [78]
TPA-(T-PDI-EG)3 PBDTTT-C-T 3.80/5.60 DIO 3% 1.25:1 5.36 0.90 39 1.92 [79]
TPH-4 PDBT-T1 3.84/5.88 DIO 0.25% 1:1 12.2 0.96 67.8 8.03 [81]
TPH-5 PDBT-T1 3.82/5.86 DIO 0.25% 1:1 12.2 0.87 68.1 8.15 [81]
TPH-6 PDBT-T1 3.80/5.85 DIO 0.25% 1:1 12.2 0.98 66.7 8.05 [81]
TPH-7 PDBT-T1 3.82/5.88 DIO 0.25% 1:1 12.6 0.98 69.2 8.64 [81]
TPH-Se PDBT-T1 3.80/5.97 DIO 0.75% 01:01 12.72 1.00 72.1 9.28 [24]
B(PDI)3 PTB7-Th 3.86/6.0 CN 3% 1:1.5 13.1 0.83 53 5.65 [82]
Ta-PDI PTB7-Th 3.81/6.03 CN 0.5% 1:1 17.1 0.78 68.5 9.15 [25]
Tri-PDI PTB7-Th 3.92/5.80 DIO 1% 1:1.5 6.13 0.85 38 2.19 [83]
Fused tri-PDI PTB7-Th 3.73/5.95 DIO 1% 1:1.5 12.39 0.91 55 6.19 [83]
TPBDT PTB7-Th 3.98/5.71 DPE 8% 1:1.5 18.3 0.92 59 8.47 [84]
bTPB6 PTB7-Th 3.79/5.92 / 1:1.5 12.5 0.82 58 5.85 [85]
bTPB6-C PTB7-Th 3.75/6.21 DIO+DPE (2.5+2.5) 1:1.5 15.1 0.79 57 7.69 [85]
6T-PDI4 PTB7-Th 4.18/5.73 DIO 1% 1:2 10.69 0.82 47 4.12 [86]
TPC-PDI4 PffBT4T-2DT 3.75/6.00 / 1:1.5 9.2 0.96 49 4.3 [87]
TPSi-PDI4 PffBT4T-2DT 3.75/6.01 / 1:1.5 8.5 0.94 53 4.2 [87]
TPGe-PDI4 PffBT4T-2DT 3.68/5.94 / 1:1.5 5.0 0.92 37 1.6 [87]
Me-PDI4 PBDTTT-C-T 3.82/5.96 DIO 3% 1:1 7.83 0.77 45 2.73 [88]
Tetra-PBI PBDT-TS1 3.74/5.90 DPE 3% 1:1.5 9.65 0.95 50 3.62 [89]
Tetra-PBI-S PBDT-TS1 3.68/6.02 DPE 3% 1:1.5 13.02 0.94 39 6.17 [89]
TPE-PDI4 PTB7-Th 3.72/5.77 / 1:1.4 11.7 0.91 52 5.53 [90]
TPPz-PDI4 PffBT-T3(1,2)-2 3.76/5.86 / 1:1.5 12.7 0.993 57 7.1 [91]
SF-PDI4 PV4T2FBT 3.78/5.97 DIO 3% 1:0.8 12.11 0.90 55.83 5.98 [93]
P4N4 PBDB-T 3.69/5.97 DIO 0.5% 1:0.8 9.40 0.958 63.4 5.71 [94]
PBI-por PTB7-Th 3.65/5.36 DIO 1% 1:1 14.5 0.78 66 7.4 [95]

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