BUZ45

Semiconductor

Data Sheet October 1998 File Number 2257.1

9.6A, 500V, 0.600 Ohm, N-Channel Power Features

MOSFET • 9.6A, 500V
[ /Title
IThis is an N-Channel enhancement mode silicon gate • rDS(ON) = 0.600Ω
(BUZ45) power field effect transistor designed for applications such
/Subject as switching regulators, switching converters, motor drivers, • SOA is Power Dissipation Limited
(9.6A, relay drivers, and drivers for high power bipolar switching • Nanosecond Switching Speeds
500V, transistors requiring high speed and low gate drive power. • Linear Transfer Characteristics
0.600 This type can be operated directly from integrated circuits.
• High Input Impedance
Ohm, N- Formerly developmental type TA17435.
• Majority Carrier Device
Channel
Power Ordering Information Symbol
MOS- PART NUMBER PACKAGE BRAND
D
FET) BUZ45 TO-204AA BUZ45
/Author NOTE: When ordering, use the entire part number.
() G

/Key-
S
words
(Harris
Semi-
conduc- Packaging
tor, N-
JEDEC TO-204AA
Channel
Power
MOS- DRAIN
(FLANGE)
FET.
TO-
204AA)
/Creator
()
/DOCIN GATE (PIN 1)
SOURCE (PIN 2)

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1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998