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EECE 5141C/6041C:

Microfabrication Lab for


Semiconductor Devices and MEMS

1. Introduction
Tao Li

Spring 2023
Acknowledgements: This lecture is partly based on Prof. Chong Ahn’s
previous course notes.

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MEMS and Microsystems


• Microsensors
• Microactuators Microelectromechanical Systems (MEMS)
• Microfabrication methods
Benefits:
• Small size/weight: e.g.
implantable, aerospace, and
portable devices
• Low power operation
• Near field enhancement /
scaling effect
• Interface and integration:
on-chip or hybrid integrated
interface circuits
• Potentially low cost: large
volume production
Limitations:
• Low inertial force
• Limited bulk material
choices
• Packaging & integration
challenges
• High equipment & NRE cost
MEMS and Autonomous Microsystems

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Sensors in a Complete Closed-Loop Instrument
• Sensors, actuators, interface circuits, and digital computing form a complete,
closed-loop instrument for monitoring and influence of the real world

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Surface-Micromachined Microaccelerometers

• Undercut polysilicon shuttle mass


• Differential capacitance sensing

ADXL05:
• ±5g operating range
• 1000g survivability
• 0.5mg/√Hz noise floor
Analog Devices, Inc.

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Micromachined Vibrating Ring Gyro
• All silicon, single-crystal and polysilicon

First (1998) micro-


gyro to reach tactical
grade performance,
with a resolution of
0.005°/sec. Khalil Najafi, Univ. Michigan &
GM/Delco

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TI Digital Micromirror Projection Display


Mirror Torsion • Electrostatically-steered
Element Hinge aluminum mirrors
Support
Post • Mirror dimensions: 16 µm x
16 µm
• Two-level structure with
hinged bottom plate and
Offset center-yoked top mirror
Silicon Mirror Landing
Address
Electrodes • Array Size: 800 x 600
Substrate Electrode elements or larger
• In Production

Texas Instruments, Inc.

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Objectives

Silicon Microfabrication
• To learn practical microfabrication of silicon devices.
• To understand the fabrication procedures of silicon devices.
• To practice hand-on skills of MEMS fabrication.
• To design, fabricate, and characterize a micro pressure
sensor.

Micro Pressure Sensor


• A typical microsensor which includes significant types of
silicon and MEMS fabrication techniques.
• Has a simple but very fundamental structure.
• Has numerous applications in aerospace, automotive, and
biomedical areas.

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Basic Concepts – 1

Definition of Transducers
• Transducers are elements that convert one form of energy to
another
• (Alternatively, elements that relate a physical quantity to an
electrical quantity, even if the energy required to operate the
transducer is supplied primarily from the measurement system.)
• Transducers can be sensors (for measurement), actuators (for
doing mechanical/thermal/chemical/other work), or displays.

Microsensor
• A sensor that is made using microfabrication techniques with at
least some characteristic features of sizes at the sub-mm scale.

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Basic Concepts – 2
Pressure Sensors
• To convert pressure into motion, and further into electrical
signal

1. Primary energy conversion


• The pressure is the only source of power. The pressure that
is being measured alters the shape or position of a
mechanical element, which causes a pointer to be moved
over a calibrated scale.

A. Bellows

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Basic Concepts – 3
B. Diaphragm

C. Bourdon Tube Motion

Pressure

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Basic Concepts – 4
2. Parametric Pressure Sensor
• Piezoresistive, capacitive, force balance, variable reluctance,
or bonded strain gage.

Vo = f(P)

Vo Pressure (P)

J. Bryzek, et al., “Silicon Sensors and Microstructures,” Lucas NovaSensor, Fremont, CA (1991)

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Pressure Terminology – 1
(1) Absolute pressure
• The pressure is
measured relative to a
perfect vacuum.
• A reference vacuum is
sealed inside the
sensor (vacuum
sensor).

(2) Gauge pressure


• The pressure is
measured relative to
ambient atmospheric
pressure.

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Pressure Terminology – 2
(3) Differential pressure
• Differential pressure sensors measure one input pressure relative
to another. (Gauge pressure: a specific type of differential pressure
in which one pressure is always atmospheric)
• Maximum working pressure: maximum pressure that can be
applied to either port
• Flow measurement

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Pressure Units
• Pressure = Force / Unit area

• Pa (Pascal) = Newton / Square meter = (N/m2)


o 1 bar = 1 x 105 Pa = 100 kPa

• psi = pound / square inch = (lb/in2)


o 1 Pa = 0.000145 psi

• atm (atmospheric pressure)


o 1 atm = 760 mmHg = 760 Torr
= 14.696 psi
= 1.01325 x 105 Pa
= 1.01325 bar

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Photolithography: Brief Intro

• Lithography is the basic technique used to define and


transfer patterns in most micromachining and
integrated circuit fabrication.
• In optical lithography UV light is directed through a
mask to selectively expose a photosensitive organic
material (photoresist).
• For positive-working resist, exposed resist is
removed in developer.
• Exposed regions can be then manipulated (etching,
deposition, etc.) or the resist can be used as a
sacrificial (temporary spacer) layer.

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Lithography

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MEMS Mask Design Procedure

1. Device simulation
2. Determine device geometry
3. Verify fabrication steps
4. Define pattern layers
5. Understand mask generator and aligner (e.g.,
minimum and maximum feature size, mask holder,
or aligning steps)
6. Design masks
7. Add alignment marks
8. Debug designed masks
9. Fabricate masks

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EECE 5141/6041 – Fabrication Sequence for


Pressure Sensor
Mask 0 Mask 1
(No mask, wafer preparation)

Open window for backside etching

(100) Silicon wafer cleaning

Anisotropic Si backside etching

Oxidation for wet etching mask Oxide removal

Re-oxidation

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EECE 5141/6041 – Fabrication Sequence for
Pressure Sensor
Mask 2 Mask 3

Open window for p+ implantation


Open for ohmic contact

Boron p+ implantation

Anneal & drive-in Aluminum deposition

Mask 4
Strip oxide for wafer bonding

Pattern metal lines


Wafer bonding on glass substrate

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Pressure Sensor Mask Design

• Four mask layers


 Layer 1: diaphragm pattern
 Layer 2: piezoresistor pattern
 Layer 3: ohmic contact pattern
 Layer 4: metal pattern

• Steps of mask design


 Decide pattern sizes
 Consider fabrication processing (etching or lift-off?)
 Type of photoresist (positive or negative)?
 Alignment marks

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Layer 1: Membrane – Positive PR, Etching

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(After Layer 1)

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Layer 2: PZR – Positive PR, Etching

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(After Layer 2)

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Layer 3: Ohmic Contact (Via) – Positive PR,
Etching

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(After Layer 3)

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Layer 4: Metal Pattern – Positive PR, Etching

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(After Layer 4)

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Pressure Sensor to be Fabricated in
This Lab Course

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Diaphragm Layer

1500 µm

1500 µm

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Piezoresistor Layer

145 µm
30 µm
80 µm

205 µm

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PZR and Diaphragm Layer

660 µm
225 µm

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Vias

20 µm

20 µm

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Metal Traces

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All Layers

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Fabricated Pressure Sensors


(Prior to Dicing)

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