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  • Lab P09 - Aluminum Deposition and Sintering

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    Anh Luu
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    This document provides instructions for a microfabrication lab involving aluminum deposition and sintering. It outlines steps to remove native oxide from silicon through HF dipping, deposit 0.5 micrometers of aluminum through e-beam evaporation at 10 angstroms per second and 200 milliamps emission current, and sinter the aluminum at 500 degrees Celsius for 5 minutes to relieve stress between the aluminum and silicon near their eutectic temperature.

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    This document provides instructions for a microfabrication lab involving aluminum deposition and sintering. It outlines steps to remove native oxide from silicon through HF dipping, deposit 0.5 micrometers of aluminum through e-beam evaporation at 10 angstroms per second and 200 milliamps emission current, and sinter the aluminum at 500 degrees Celsius for 5 minutes to relieve stress between the aluminum and silicon near their eutectic temperature.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    17 views1 page

    Lab P09 - Aluminum Deposition and Sintering

    Uploaded by

    Anh Luu
    This document provides instructions for a microfabrication lab involving aluminum deposition and sintering. It outlines steps to remove native oxide from silicon through HF dipping, deposit 0.5 micrometers of aluminum through e-beam evaporation at 10 angstroms per second and 200 milliamps emission current, and sinter the aluminum at 500 degrees Celsius for 5 minutes to relieve stress between the aluminum and silicon near their eutectic temperature.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    UNIVERSITY OF CINCINNATI

    EECE 5141/6041: Microfabrication Lab for Semiconductor Devices and MEMS

    Lab P09: Aluminum Deposition and Sintering

    Procedures
    1. Remove the native oxide by 2% HF dipping for 1 min just before Al metallization.
    2. Aluminum deposition by E-beam Evaporation.
    • Deposition rate: 10 Å/s
    • Emission current: 200 mA
    • Thickness: 0.5 µm
    3. Sintering of Al at 500°C for 5 minutes to form a good ohmic contact and bond (remove stress
    concentration between Al and Si) near to Al-Si eutectic temperature.

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