MDU5692S - Dual N-Channel Trench MOSFET 30V

MDU5692S
Dual Asymmetric N-channel Trench MOSFET 30V

General Description Features

The MDU5692S uses advanced MagnaChip’s MOSFET FET1 FET2
Technology, which provides high performance in on-state  VDS = 30V VDS = 30V
resistance, fast switching performance and excellent  ID = 52A ID = 100A @VGS = 10V
quality. MDU5692S is suitable for DC/DC converter and  RDS(ON)
general purpose applications. < 5.4mΩ < 2.0mΩ @VGS = 10V
< 8.5mΩ < 2.5mΩ @VGS = 4.5V
 100% UIL Tested
 100% Rg Tested

S2
5 S2
6 S2
7
S1/D2 8 G2

1 4
2 D1 3
3 D1 2
4 1
D1
G1

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol FET1 FET2 Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 ±12 V
o
TC=25 C (Silicon Limited) 70 160
o
TC=25 C (Package Limited) 52 100
Continuous Drain Current (1) TC=70oC ID 57 129 A
o
TA=25 C 15.3 27.9
o
TA=70 C 12.4 22.4
Pulsed Drain Current IDM 208 400 A
TC=25oC 46.3 83.3
Power Dissipation PD W
TA=25oC 2.2 2.5
Single Pulse Avalanche Energy (2) EAS 43 100 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics
FET1 FET2
Characteristics Symbol Unit
Typ. Max Typ. Max
(1)
Thermal Resistance, Junction-to-Ambient RθJA 47.5 57 41.7 50 o
C/W
Thermal Resistance, Junction-to-Case RθJC 2.2 2.7 1.1 1.5

Aug. 2015 Ver. 1.1 1 MagnaChip Semiconductor Ltd.

 MDU5692S - Dual N-Channel Trench MOSFET 30V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
MDU5692SVRH -55~150oC Dual PDFN56 Tape & Reel Halogen Free

FET1 Electrical Characteristics (Ta =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 1.8 3.0
Drain Cut-Off Current IDSS VDS = 30V, VGS = 0V - - 1
μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
VGS = 10V, ID = 20A - 4.4 5.4
o
Drain-Source ON Resistance RDS(ON) TJ=125 C - 6.8 8.3 mΩ
VGS = 4.5V, ID = 20A - 6.7 8.5
Forward Transconductance gfs VDS = 5V, ID = 20A - 91 - S
Dynamic Characteristics
Total Gate Charge Qg(10V) 14 20 27
Total Gate Charge Qg(4.5V) VDS = 15.0V, ID = 20A, 6.2 9 12
nC
Gate-Source Charge Qgs VGS = 10V - 6 -
Gate-Drain Charge Qgd - 1.9 -
Input Capacitance Ciss 1040 1500 1950
VDS = 15.0V, VGS = 0V,
Output Capacitance Coss 418 610 790 pF
f = 1.0MHz
Reverse Transfer Capacitance Crss 28 42 55
Turn-On Delay Time td(on) - 10.5 -
Rise Time tr VGS = 10V, VDS=15V, - 11.3 -
ns
Turn-Off Delay Time td(off) ID=20A, Rg=3.0Ω - 28.5 -
Fall Time tf - 5.1 -
Gate Resistance Rg f=1 MHz 0.5 1.0 2.0 Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - 0.7 1.0 V
Body Diode Reverse Recovery Time trr - 30.5 - ns
IF = 20A, dl/dt = 200A/μs
Body Diode Reverse Recovery Charge Qrr - 42.9 - nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 20 A, VDD = 27V, VGS = 10V.
.

Aug. 2015 Ver. 1.1 2 MagnaChip Semiconductor Ltd.

 MDU5692S - Dual N-Channel Trench MOSFET 30V
50 10

Drain-Source On-Resistance [mΩ]

40 8
VGS = 10V VGS = 4.5V
ID, Drain Current [A]

8.0V
6.0V 4.0V
30 6
4.5V
VGS = 10V

20 4

3.0V
10 2

2.5V

0 0
0.0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 50

VDS, Drain-Source Voltage [V] ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.8
※ Notes : 100
1. VGS = 10 V
2. ID = 20 A ※ Notes :
1.6
ID = 20A
Drain-Source On-Resistance

Drain-Source On-Resistance

80
RDS(ON), (Normalized)

1.4
RDS(ON) [mΩ ],

60
1.2

1.0
40

0.8
20

0.6
-50 -25 0 25 50 75 100 125 150
o 0
TJ, Junction Temperature [ C] 2 3 4 5 6 7 8 9 10

VGS, Gate to Source Volatge [V]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage
30
Temperature ※ Notes :
Area※ Notes
V = 5V
:
DS
VGS = 0V

25
IDR, Reverse Drain Current [A]

1
10
ID, Drain Current [A]

20

15

0
10
10

-1
0 10
0 2 4 6 8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VSD, Source-Drain voltage [V]

VGS, Gate-Source Voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Aug. 2015 Ver. 1.1 3 MagnaChip Semiconductor Ltd.

 MDU5692S - Dual N-Channel Trench MOSFET 30V
10 2000
Ciss = Cgs + Cgd (Cds = shorted)
※ Note : ID = 20A Coss = Cds + Cgd
VDS = 15V Crss = Cgd
8
VGS, Gate-Source Voltage [V]

1500
Ciss

Capacitance [F]
6

1000
※ Notes ;
4 1. VGS = 0 V
2. f = 1 MHz

500
Coss
2

Crss
0 0
0 5 10 15 20 0 5 10 15 20 25 30
QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

3
10
80

2
1 ms
10
60
ID, Drain Current [A]

ID, Drain Current [A]

10 ms Limited by Package

10
1 Operation in This Area
is Limited by R DS(on) 100 ms 40

1s
10s
DC
0
10 20

Single Pulse
TJ=Max Rated
TC=25 ℃

-1
10 0
-1 0 1 2
10 10 10 10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [ ] ℃

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
Temperature

1
10
(t), Thermal Response

0
10 D=0.5

0.2
0.1
10
-1 0.05

0.02
0.01
JC
Zθ

-2
10 ※ Notes :
Duty Factor, D=t 1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
single pulse

-3
10
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response Curve

Aug. 2015 Ver. 1.1 4 MagnaChip Semiconductor Ltd.

 MDU5692S - Dual N-Channel Trench MOSFET 30V
FET2 Electrical Characteristics (Ta =25oC)
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 10mA, VGS = 0V 30 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.1 1.4 2.2
Drain Cut-Off Current IDSS VDS = 30V, VGS = 0V - - 500
μA
Gate Leakage Current IGSS VGS = ±12V, VDS = 0V - - ±0.1
VGS = 10V, ID = 20A - 1.5 2.0
o
Drain-Source ON Resistance RDS(ON) TJ=125 C - 1.9 2.7 mΩ
VGS = 4.5V, ID = 20A - 1.9 2.5
Forward Transconductance gfs VDS = 5V, ID = 20A - 100 - S
Dynamic Characteristics
Total Gate Charge Qg(10V) 49 70 92
Total Gate Charge Qg(4.5V) VDS = 15.0V, ID = 20A, 20 29 39
nC
Gate-Source Charge Qgs VGS = 10V - 10.8 -
Gate-Drain Charge Qgd - 6.6 -
Input Capacitance Ciss 3573 5140 6679
VDS = 15.0V, VGS = 0V,
Output Capacitance Coss 820 1200 1560 pF
f = 1.0MHz
Reverse Transfer Capacitance Crss 64 94 122
Turn-On Delay Time td(on) - 15.7 -
Rise Time tr VGS = 10V, VDD=15V, - 12.7 -
ns
Turn-Off Delay Time td(off) ID=20A, Rg=3Ω - 77 -
Fall Time tf - 9.6 -
Gate Resistance Rg f=1 MHz 0.5 1.0 2.0 Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1.0A, VGS = 0V - 0.4 1.0 V
Body Diode Reverse Recovery Time trr - 42 - ns
IF = 20A, dl/dt = 200A/μs
Body Diode Reverse Recovery Charge Qrr - 70 - nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 25 A, VDD = 27V, VGS = 10V..

Aug. 2015 Ver. 1.1 5 MagnaChip Semiconductor Ltd.

 MDU5692S - Dual N-Channel Trench MOSFET 30V
20
VGS = 10V 3.0

6.0V
3.0V 2.8

Drain-Source On-Resistance [mΩ]

4.5V
4.0V 2.6
15
ID, Drain Current [A]

2.5V
2.4

2.2

10 2.0 VGS = 4.5V

1.8

1.6 VGS = 10V

5
1.4

1.2

0 1.0
0.00 0.02 0.04 0.06 0.08 0.10 0 10 20 30 40 50

VDS, Drain-Source Voltage [V] ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.8 50
※ Notes :
1. VGS = 10 V ※ Notes :
2. ID = 20 A ID = 20.0A
1.6
Drain-Source On-Resistance

40
Drain-Source On-Resistance
RDS(ON), (Normalized)

1.4
RDS(ON) [mΩ ],

30

1.2

20
1.0

10
0.8

0.6 0
-50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10

o VGS, Gate to Source Volatge [V]

TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

30
※ Notes : ※ Notes :
VDS = 5V VGS = 0V
25
IDR, Reverse Drain Current [A]
ID, Drain Current [A]

10
20

15

1
10

0 0.1
0 2 4 6 8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VGS, Gate-Source Voltage [V] VSD, Source-Drain voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Aug. 2015 Ver. 1.1 6 MagnaChip Semiconductor Ltd.

 MDU5692S - Dual N-Channel Trench MOSFET 30V
10
8000
※ Note : ID = 20A Ciss = Cgs + Cgd (Cds = shorted)
VDS = 15V Coss = Cds + Cgd
7000
Crss = Cgd
8
VGS, Gate-Source Voltage [V]

6000

Capacitance [pF]
6 5000
Ciss
4000

4
3000 ※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
2000
2 Coss
1000
Crss
0 0
0 10 20 30 40 50 60 70 0 5 10 15 20 25 30

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

3
10 180

160
1 ms

10
2 140
ID, Drain Current [A]

ID, Drain Current [A]

10 ms 120
Operation in This Area
is Limited by R DS(on)
1
100 ms 100
10 Limited by Package
1s 80
10 s
DC
60
0
10
40
Single Pulse
TJ=Max Rated
20
TC=25 ℃

-1
10 0
-1 0 1 2
10 10 10 10 25 50 75 100 125 150
VDS, Drain-Source Voltage [V] TC, Case Temperature [ ] ℃

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.
Case Temperature

1
10
(t), Thermal Response

0
10
D=0.5

0.2

10
-1 0.1
0.05
0.02
JC

0.01
Zθ

-2
10 ※ Notes :
Duty Factor, D=t 1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC

single pulse
-3
10
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response

Curve

Aug. 2015 Ver. 1.1 7 MagnaChip Semiconductor Ltd.

 MDU5692S - Dual N-Channel Trench MOSFET 30V
Package Dimension

Dual PDFN56 (5x6mm)

Dimensions are in millimeters, unless otherwise specified

Aug. 2015 Ver. 1.1 8 MagnaChip Semiconductor Ltd.

 MDU5692S - Dual N-Channel Trench MOSFET 30V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Aug. 2015 Ver. 1.1 9 MagnaChip Semiconductor Ltd.