IKFW40N60DH3E

TRENCHSTOPTMAdvancedIsolation

HighspeedswitchingseriesthirdgenerationIGBTcopackedwithRapid1
fastandsoftantiparalleldiodeinfullyisolatedpackage

Features: C

TRENCHSTOP™technologyoffers:
•Shortcircuitwithstandtime5µsatTvj=175°C
•PositivetemperaturecoefficientinVCE(sat)
•LowEMI
•Verysoft,fastrecoveryanti-paralleldiode G
•Maximumjunctiontemperature175°C E
•2500VRMSelectricalisolation,50/60Hz,t=1min
•100%testedisolatedmountingsurface
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt

PotentialApplications:

•AirConditioningPFC
•GeneralPurposeDrives(GPD) Fully isolated package TO-247

•ServoDrives

ProductValidation:

Qualifiedforindustrialapplicationsaccordingtotherelevanttests
ofJEDEC47/20/22

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IKFW40N60DH3E 600V 30A 2.3V 175°C K40DDH3E PG-TO247-3-AI

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1

www.infineon.com 2017-09-21
IKFW40N60DH3E

TRENCHSTOPTMAdvancedIsolation

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet 2 V2.1
2017-09-21
IKFW40N60DH3E

TRENCHSTOPTMAdvancedIsolation

MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value Unit

Collector-emittervoltage,Tvj≥25°C VCE 600 V
DCcollectorcurrent,limitedbyTvjmax
Th=25°C 34.0
IC A
Th=65°C 28.0
Th=65°C 44.01)
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 90.0 A
Turn off safe operating area
- 90.0 A
VCE≤600V,Tvj≤175°C,tp=1µs
Diodeforwardcurrent,limitedbyTvjmax
Th=25°C IF 35.0 A
Th=65°C 27.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 90.0 A
Gate-emitter voltage ±20
VGE V
TransientGate-emittervoltage(tp≤10µs,D<0.010) ±30
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000 tSC µs
Time between short circuits: ≥ 1.0s
Tvj=150°C 5
PowerdissipationTh=25°C 111.0
Ptot W
PowerdissipationTh=65°C 81.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
°C
wave soldering 1.6mm (0.063in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3
IsolationvoltageRMS,f=50/60Hz,t=1min2) Visol 2500 V

ThermalResistance
Value
Parameter Symbol Conditions Unit
min. typ. max.
RthCharacteristics
IGBT thermal resistance,3)
Rth(j-h) - 1.15 1.35 K/W
junction - heatsink
Diode thermal resistance,3)
Rth(j-h) - 2.43 2.67 K/W
junction - heatsink
Thermal resistance
Rth(j-a) - - 65 K/W
junction - ambient

1)
Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 0.9 W/mK, standard polyimide based reinforced carrier
insulator
2)
For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
3)
At force on body F = 500N, Ta = 25ºC
Datasheet 3 V2.1
2017-09-21
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TRENCHSTOPTMAdvancedIsolation

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 600 - - V
VGE=15.0V,IC=30.0A
Collector-emitter saturation voltage VCEsat Tvj=25°C - 2.30 2.70 V
Tvj=175°C - 2.90 -
VGE=0V,IF=15.0A
Diode forward voltage VF Tvj=25°C - 1.60 1.90 V
Tvj=175°C - 1.55 -
Gate-emitter threshold voltage VGE(th) IC=0.29mA,VCE=VGE 4.1 5.1 5.7 V
VCE=600V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 40 µA
Tvj=175°C - 300 -
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=30.0A - 10.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 1183 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 50 - pF
Reverse transfer capacitance Cres - 32 -
VCC=480V,IC=30.0A,
Gate charge QG - 107.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case
Short circuit collector current VGE=15.0V,VCC≤400V,
Max. 1000 short circuits IC(SC) tSC≤5µs - - A
122
Time between short circuits: ≥ 1.0s Tvj=150°C

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 18 - ns
Rise time tr VCC=400V,IC=30.0A, - 34 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=10.0Ω,RG(off)=10.0Ω, - 144 - ns
Fall time tf Lσ=75nH,Cσ=30pF - 16 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.87 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.36 - mJ
Total switching energy Ets - 1.23 - mJ

Datasheet 4 V2.1
2017-09-21
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TRENCHSTOPTMAdvancedIsolation

Diode reverse recovery time trr Tvj=25°C, - 72 - ns

Diode reverse recovery charge Qrr VR=400V, - 0.40 - µC
IF=15.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs - 9.9 - A
Diode peak rate of fall of reverse
dirr/dt - -414 - A/µs
recoverycurrentduringtb

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) Tvj=175°C, - 18 - ns
Rise time tr VCC=400V,IC=30.0A, - 32 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=10.0Ω,RG(off)=10.0Ω, - 165 - ns
Fall time tf Lσ=75nH,Cσ=30pF - 19 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 1.18 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.51 - mJ
Total switching energy Ets - 1.69 - mJ

Diode reverse recovery time trr Tvj=175°C, - 125 - ns

Diode reverse recovery charge Qrr VR=400V, - 1.01 - µC
IF=15.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs - 14.5 - A
Diode peak rate of fall of reverse
dirr/dt - -255 - A/µs
recoverycurrentduringtb

Datasheet 5 V2.1
2017-09-21
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TRENCHSTOPTMAdvancedIsolation

100 120

100
IC,COLLECTORCURRENT[A]

Ptot,POWERDISSIPATION[W]
not for linear use
10 80

60

1 40

20

0.1 0
1 10 100 1000 25 50 75 100 125 150 175
VCE,COLLECTOR-EMITTERVOLTAGE[V] Th,HEATSINKTEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea Figure 2. Powerdissipationasafunctionofheatsink
(D=0,Th=25°C,Tj≤175°C,VGE=15V,tp≤1µs) temperature
(Tj≤175°C)

40 90
TO247 Advanced Isolation
TO247 with insulator film (using same chip)
35 80 VGE=20V

17V
70
30 15V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]

60 13V
25
11V
50
9V
20
7V
40
5V
15
30

10
20

5 10

0 0
25 50 75 100 125 150 175 0 1 2 3 4 5
Th,HEATSINKTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofheatsink Figure 4. Typicaloutputcharacteristic
temperature (Tj=25°C)
(VGE≥15V,Tj≤175°C,insulatorfilm:152µm,
0.9W/mK)
Datasheet 6 V2.1
2017-09-21
IKFW40N60DH3E

TRENCHSTOPTMAdvancedIsolation

90 90
Tvj = 25°C
Tvj = 175°C
80 VGE=20V 80

17V
70 70
15V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
60 13V 60

11V
50 50
9V

7V
40 40
5V

30 30

20 20

10 10

0 0
0 1 2 3 4 5 6 4 6 8 10 12 14 16
VCE,COLLECTOR-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaltransfercharacteristic
(Tj=175°C) (VCE=20V)

6
IC = 15A td(off)
IC = 30A tf
IC = 60A td(on)
VCE(sat),COLLECTOR-EMITTERSATURATION[V]

tr
5

100
t,SWITCHINGTIMES[ns]

10
2

0 1
25 50 75 100 125 150 175 0 10 20 30 40 50 60
Tj,JUNCTIONTEMPERATURE[°C] IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature collectorcurrent
(VGE=15V) (ind.load,Tj=175°C,VCE=400V,VGE=0/15V,
RG=10Ω,testcircuitinFig.E)
Datasheet 7 V2.1
2017-09-21
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TRENCHSTOPTMAdvancedIsolation

1000 1000
td(off) td(off)
tf tf
td(on) td(on)
tr tr
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
100 100

10 10

1 1
0 10 20 30 40 50 60 25 50 75 100 125 150 175
RG,GATERESISTOR[Ω] Tj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typicalswitchingtimesasafunctionofgate Figure 10. Typicalswitchingtimesasafunctionof
resistor junctiontemperature
(ind.load,Tj=175°C,VCE=400V,VGE=0/15V, (ind.load,VCE=400V,VGE=0/15V,IC=30A,
IC=30A,testcircuitinFig.E) rG=10Ω,testcircuitinFig.E)

6 6
typ. Eoff
min. Eon
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

max. Ets
5
E,SWITCHINGENERGYLOSSES[mJ]

4 3

2 0
25 50 75 100 125 150 0 10 20 30 40 50 60
Tj,JUNCTIONTEMPERATURE[°C] IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature functionofcollectorcurrent
(IC=0.29mA) (ind.load,Tj=175°C,VCE=400V,VGE=0/15V,
RG=10Ω,testcircuitinFig.E)
Datasheet 8 V2.1
2017-09-21
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TRENCHSTOPTMAdvancedIsolation

4.0 2.00
Eoff Eoff
Eon Eon
3.5 Ets 1.75 Ets
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
3.0 1.50

2.5 1.25

2.0 1.00

1.5 0.75

1.0 0.50

0.5 0.25

0.0 0.00
0 10 20 30 40 50 60 25 50 75 100 125 150 175
RG,GATERESISTOR[Ω] Tj,JUNCTIONTEMPERATURE[°C]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor functionofjunctiontemperature
(ind.load,Tj=175°C,VCE=400V,VGE=0/15V, (indload,VCE=400V,VGE=0/15V,IC=30A,
IC=30A,testcircuitinFig.E) RG=10Ω,testcircuitinFig.E)

2.50 16
Eoff VCC=120V
Eon VCC=480V
2.25 Ets 14

2.00
E,SWITCHINGENERGYLOSSES[mJ]

VGE,GATE-EMITTERVOLTAGE[V]

12
1.75

10
1.50

1.25 8

1.00
6

0.75
4
0.50

2
0.25

0.00 0
200 250 300 350 400 450 500 0 20 40 60 80 100 120
VCE,COLLECTOR-EMITTERVOLTAGE[V] QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalgatecharge
functionofcollectoremittervoltage (IC=30A)
(ind.load,Tj=175°C,VGE=0/15V,IC=30A,
RG=10Ω,testcircuitinFig.E)
Datasheet 9 V2.1
2017-09-21
IKFW40N60DH3E

TRENCHSTOPTMAdvancedIsolation

300
Cies
1E+4 Coes

IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
Cres

250
C,CAPACITANCE[pF]

1000 200

150

100

100

10 50
0 10 20 30 10 12 14 16 18 20
VCE,COLLECTOR-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof Figure 18. Typicalshortcircuitcollectorcurrentasa
collector-emittervoltage functionofgate-emittervoltage
(VGE=0V,f=1MHz) (VCE≤400V,startatTj=25°C)

15

1
Zth(j-h),TRANSIENTTHERMALIMPEDANCE[K/W]
tSC,SHORTCIRCUITWITHSTANDTIME[µs]

12
D = 0.5
0.2
0.1
0.05
9 0.1
0.02
0.01
single pulse

0.01

i: 1 2 3 4 5 6 7
ri[K/W]: 0.010384 0.20064 0.29821 0.25718 0.25575 0.32197 0.02376
τi[s]: 1.6E-5 2.6E-4 2.1E-3 0.017161 0.188069 0.84602 14.21666

0 0.001
10 11 12 13 14 15 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10
VGE,GATE-EMITTERVOLTAGE[V] tp,PULSEWIDTH[s]
Figure 19. Shortcircuitwithstandtimeasafunctionof Figure 20. IGBTtransientthermalimpedanceasa
gate-emittervoltage functionofpulsewidth
(VCE≤400V,startatTj≤150°C) (D=tp/T)

Datasheet 10 V2.1
2017-09-21
 IKFW40N60DH3E

TRENCHSTOPTMAdvancedIsolation

250
Tvj = 25°C, IF = 15A
Tvj = 175°C, IF = 15A
Zth(j-h),TRANSIENTTHERMALIMPEDANCE[K/W]

200
D = 0.5

trr,REVERSERECOVERYTIME[ns]
0.2
0.1
0.05
150
0.1 0.02
0.01
single pulse

100

0.01

50

i: 1 2 3 4 5 6
ri[K/W]: 0.5566 1.03543 0.3718 0.31141 0.37719 0.022924
τi[s]: 2.2E-4 1.2E-3 0.010917 0.148514 0.749614 15.94642

0.001 0
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 200 400 600 800 1000 1200
tp,PULSEWIDTH[s] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 21. Diodetransientthermalimpedanceasa Figure 22. Typicalreverserecoverytimeasafunction
functionofpulsewidth ofdiodecurrentslope
(D=tp/T) (VR=400V)

1.2 18
Tvj = 25°C, IF = 15A Tvj = 25°C, IF = 15A
Tvj = 175°C, IF = 15A Tvj = 175°C, IF = 15A
16
1.0
Qrr,REVERSERECOVERYCHARGE[µC]

Irr,REVERSERECOVERYCURRENT[A]

14

0.8 12

10
0.6
8

0.4 6

4
0.2
2

0.0 0
200 400 600 800 1000 1200 200 400 600 800 1000 1200
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverychargeasa Figure 24. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope functionofdiodecurrentslope
(VR=400V) (VR=400V)

Datasheet 11 V2.1
2017-09-21
IKFW40N60DH3E

TRENCHSTOPTMAdvancedIsolation

0 90
Tvj = 25°C, IF = 15A Tvj = 25°C
Tvj = 175°C, IF = 15A Tvj = 175°C
-50 80
dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs]

-100
70

IF,FORWARDCURRENT[A]
-150
60

-200
50
-250
40
-300

30
-350

20
-400

-450 10

-500 0
200 400 600 800 1000 1200 0 1 2 3 4
diF/dt,DIODECURRENTSLOPE[A/µs] VF,FORWARDVOLTAGE[V]
Figure 25. Typicaldiodepeakrateoffallofreverse Figure 26. Typicaldiodeforwardcurrentasafunction
recoverycurrentasafunctionofdiode offorwardvoltage
currentslope
(VR=400V)

2.50
IF = 7.5A
IF = 15A
2.25 IF = 30A

2.00
VF,FORWARDVOLTAGE[V]

1.75

1.50

1.25

1.00

0.75

0.50
25 50 75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C]
Figure 27. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature

Datasheet 12 V2.1
2017-09-21
IKFW40N60DH3E

TRENCHSTOPTMAdvancedIsolation

PG-TO247-3-AI (PG­HSIP247­3)

MILLIMETERS
DIMENSIONS
MIN. MAX.
A - 5.18 DOCUMENT NO.
A1 4.70 4.90 Z8B00186434
A2 2.23 2.59 REVISION
A3 0.20 0.28 02
b 1.10 1.30
c 0.50 0.70 SCALE 3:1
D 22.20 22.40 0 1 2 3 4 5 6 7 8mm
D1 16.96 17.16
E 15.70 15.90
E1 13.68 13.88 EUROPEAN PROJECTION
e 5.44
L 18.31 18.91
L1 2.76 2.96
øP 3.50 3.70
øP1 5.70 5.90 ISSUE DATE
Q 5.96 6.36 05.06.2018

Note: For a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential
penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in International Standard (IEC60068­2­6 and
IEC60068­2­27). The advanced isolation device is intended only to be used assembled on an appropriate heatsink with recommended flatness
of <20µm per 100mm and roughness of <10µm.

Datasheet 13 V2.1
2017-09-21
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TRENCHSTOPTMAdvancedIsolation

Testing Conditions

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

Datasheet 14 V2.1
2017-09-21
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TRENCHSTOPTMAdvancedIsolation

RevisionHistory
IKFW40N60DH3E

Revision:2017-09-21,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2017-09-21 Final data sheet

Datasheet 15 V2.1
2017-09-21
Trademarks

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Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2018.
AllRightsReserved.

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(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
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