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4.5 MICROWAVE AMPLIFIER DESIGN

An amplifier can be designed so, that is realizes as high gain as possible, some specific gain
or as small noise figure as possible.
Also a transistor, unilateral or bilateral, has effect on the design.

4.5.1. UNILATERAL AMPLIFIER DESIGN

• Measure the S-parameters of the transistor and study, if the transistor is stable (stabilizing /
stability circles).
• If the parameter S12 ≈ 0 => calculate the unilateral quality factor and ensure, that it is small
enough.

Calculate the relation GT/GTU of the ”ordinary” transducer power gain GT and the transducer
power gain GTU based on unilaterality assumption.

The gain relation is

The unilateral quality factor U is defined

U is small => unilateral assumption is valid.

• If we want maximum gain, select the reflection coefficients at the input and at the output

Calculate the maximum gain

• Design the matching corresponding the reflection coefficients ΓS and ΓL.

• The gain can be reduced as we intentionally cause mismatching either at the input or at the
output or in both. The expression for GS and GL are similar in form and can be written in
general form
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where i=S with ii=11 or i=L with ii=22. Gi varies between

The values of reflection coefficient Γi that produce a constant gain Gi will be shown to lie in
a circle in the Smith chart. These circles are called constant Gi circles.

Define the normalized gain factor gi (i = s or l)

Reflection coefficients corresponding a specific normalized gain factor gi can be read from
the circle circumference. Circle equation can be calculated, as we know the s-parameters.

The center point of the constant gain circle is calculated from the formula

and the radius is

Each constant gi generates a new constant Gi circle. Equations (4-43) and (4-44) can be used
to generate the constant Gs circles and the constant GL circles.
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Example

Transistor S-parameters

a) Calculate the reflection coefficients that give maximum gain.

b) Calculate GS max, GL max and GTU max.
c) Draw constant gain circles at the input.
d) Design a matching circuit at the input, when GS = 2 dB.

Solution:

a) Reflection coefficients

Impedances correponding ΓS and ΓL

b) With formula (4-39)

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c) GS max = 3.31 dB and the constant gain circles GS = 2 dB, GS =1 dB, GS = 0 dB and GS = -1
dB are presented in the next figure.

Fig. 4.9. The constant gain circles at the input.

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d) Select ΓS from 2 decibel constant gain circle from point A (ΓS = 0,413|166° ;
ZS =0.42 +j0.1). The details of the input matching are presented in the next figure.

Fig. 4.10.Input matching (GS = 2 dB)

At the output ΓL = 0.21|80° is matched to 50 Ω.

The unilateral transducer power gain GTU (dB) = 2+12+0,195 = 14,195 dB.
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4.5.2 Simultaneous conjugate match: bilateral case

• Measure the S-parameters of the transistor and study, if the transistor is stable (stabilizing /
stability circles).
• S12 ≈ 0 => the unilateral assumption cannot be made.
• The maximum transducer power gain can be calculated from the formula

As K = 1 the maximum stable gain is

The maximum gain is given by the reflection coefficients

and

• Design the matching networks (complex conjugate matching).

• If the maximum gain is not required, draw the constant gain circles.

Operating power gain:

The center of the constant gain circle corresponding g p is

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and the radius of the constant gain circle is

- Select the output reflection coefficient ΓL from the constant gain circle corresponding to a
specific gain.
- Calculate the input reflection coefficient

Complex conjugate matching =>

- Design the matching circuits.

4.5.3 MATCHING TO A MINIMUM NOISE FIGURE

The noise factor of a two port amplifier is given by

where rn is the equivalent normalized resistance (rn=Rn/Z0) of the two-port and ys =gs+jbs is
the normalized admittance of the source.
yopt= gopt+jbopt is the normalized admittance of the source, with which the noise factor gets
the minimum value Fmin. In the formula (4-54) the admittances ys and yopt can be presented
with help of the reflection coefficients, then

The noise factor of a transistor is described with so called noise parameters Fmin, Γopt and rn.
These parameters are given by the manufacture of the transistor or can be measured. The
minimum noise factor is a function of the operating point and frequency. The minimum
noise factor and the maximum gain are not usually realized simultaneously with a same
reflection coefficient.

For a given noise figure parameter Ni, the center of the circle is located at
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and the radius is

The noise figure parameter Ni can be calculated from the formula

Example

The S-parameters of a transistor at 4 GHz are

The noise parameters are

Design an amplifier, with noise figure as small as possible.

Solution:

Stability K = 1,012 and |Δ| = 0,419|111,04°

=> This transistor is unconditionally stable.

By placing the S-parameter values into formulas (4-45), (4-46) and (4-47)

The minimum noise figure 2,5 dB is achieved with the reflection coefficient value Γ opt =
0,475|166°.
There are circles presented in the figure, with noise figures (2.6 dB, 2.7 dB, 2.8 dB, 2.9 dB
and 3.0 dB) on the circumference.
The center points and radiuses of the circles are calculated from the formulas (4-56), (4-57)
and (4-58).

For example the constant noise figure circles for Γi = 2.8 dB:
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and

Fig. 4.11. Constant noise figure circles (continuous line)

constant available power gain circles (dashed line).

Reflection coefficients:
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Voltage standing wave ratio:

At the output ΓL = Γ*out => VSWR.

At the input

with the formulas at the input VSWR = 4,26.

Design the matching circuits:

• The input matching network was designed with a parallel short circuited stub and a
quarter-wave transformer with Z0 = 31.1 Ω.
• The output matching network
* Microstrip line (l = 0.61 cm) (to provide soldering area).
* λ / 8 short-circuited stub to tune out most of susceptance component
(l = 0.94 cm).
* Then another series line (l = 1.35) followed by an open stub that
provides some tuning.
* The final microstrip line was used to obtain the match to 50 Ω.
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The complete amplifier schematic is shown in Fig. The substrate material is Duroid.

The microstrip lengths are presented in the figure, as εff = 1 and f = 4 GHz.
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Measurement results:
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4.5.4 BROADBAND AMPLIFIER DESIGN

The following must be noticed when designing a broadband amplifier:

• The variations of parameter |s21| and |s12| values as a function of frequency

• The parameter |s11| and |s22| values also change as a function of frequency.

=> Noise figure and VSWR change as function of frequency. The effect of frequency change
can be diminished by changing the matching (compensated matching networks) =>
mismatching.

Broadband amplifier, with constant gain and good input and output VSWR => balanced
amplifier, with structure presented in Figure 4.12.

Fig. 4.12.