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Fast Sodium Diffusion in ZnO

Poster · August 2018

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Rafał Jakieła Jarosław Kaszewski

Institute of Physics of the Polish Academy of Sciences Institute of Physics of the Polish Academy of Sciences
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 Fast Sodium Diffusion in ZnO
R. 1
Jakiela , R. Schifano1, J. 1
Kaszewski , A. Barcz 1,2
1Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
2Institute of Electron Technology, Warsaw, Poland
INTRODUCTION
For the p-type doping of zinc oxide the most attention in the literature was devoted to the elements from
the group V, i.e. P, As and Sb. It was shown in many experiments, that these elements act as acceptors only
when substitute Zn atoms and bonded with two Zn vacancies creating a VZn-XZn-VZn complex. For p-type
doping of zinc oxide more and more attention is devoted to 1A-group elements as well. Li, Na and K when
substitute Zn atom act as acceptors with ionization energies of 0.09 eV, 0.17 eV and 0.32 eV, respectively, as
reported in [1]. Unfortunately, when they occupy the interstitial positions act as donors compensating the
acceptor-type conductivity.
High dissociation degree of the NaCl salt in water, produces high concentrations of Na+ ions in the solution.
In order to introduce Na into the ZnO crystal, samples were boiled in NaCl water solution.

EXPERIMENT Na depth profiles in ZnO

Samples:
21 21
•bulk crystals 10 O
10 O
a) 100 C 3h b) 100 C 3h
•1.2 and 3.5 micron ZnO/Al2O3 – grown by O O

Na concentration [ at/cm ]
150 C 1h 150 C 1h
Na concentration [ at/cm ]

3
3

O O
sputter deposition 20 200 C 1h 20 200 C 1h
10 O 10 O
250 C 1h 250 C 1h

Annealing:
19 19
•at 100OC for 3 hours / NaCl water 10 10
solution at maximum saturation level
•at 150, 200 and 250OC for 1 hour (under 10
18
10
18

pressure, microwave heating) / NaCl

water solution at 15% saturation level [2] 17
17
10 10
0.0 0.5 1.0 0 1 2 3 4
SIMS measurement condition: Depth [ µm ] Depth [ µm ]
•Cs+ beam at 5.5keV and 100 nA Figure 1. Na concentration profiles in ZnO layers as measured by SIMS
a) 1.2 micron thick layer, b) 3.5 micron thick layer
•Na+ and OCs+ (as reference) secondary 20 O
ions 10 Temperature ( C )
O
100 C 3h - Zn-face 300 250 200 150
Na concentration [ at/cm ]

O
19 100 C 3h - O-face
•Na diffusion in ZnO 10
3

Na max concentration ( at/cm )

20
have been 10
3

 − EF 
C = CO exp 
experimentally investigated 18  kT 
•diffusion mechanism is pointed as
10
19
combined grain boundary plus interstitial 17 10
10
mechanism for ZnO layers and pure
interstitial for bulk samples 16
10
• the formation energy of Na interstitial 10
18

defect in ZnO was calculated as 0.88 eV 10

15

• activation process for Na dopant is 1.2 micron layer

3.5 micron layer
planed for further research 10
14 17
10
0 1 2 3 4 5 1.8 2.1 2.4
[1] Park C H, Zhang S B and Wei S-H – Phys. Rev. B 66 (2002) 073202 Depth [ µm ] 1/T ( 1000/K )
[2] A. H. Mohammadi, D. Richon – Ind. Eng. Chem. Res. 46 (2007) 5074
Figure 2. Na depth profiles in Fig 3. The Arrhenius plot for Na
bulk ZnO for annealing at 100OC solubility in ZnO layers. EF = 0.88 eV
3h, as measured by SIMS
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