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63-135
VARIABLE RELUCTANCE
PRESSURE TRANSDUCER DEVELOPMENT
By
W. E. Smotherman and W. V. Maddox
yon KcJrman Gas Dynamics Facility
ARO, Inc.
July 1963
AFSC Program Area 750A ,Project 8952, Task 895201
When Government drawings, specifications or other data are used for any purpose
other than in connection with a definitely related Government procurement operation,
the United States Government thereby incurs no responsibility nor any obligation
whatqoever; and the fact that the Government may have formulated, furnished, or in
any way supplied the said drawings, specifications,. or other data, is not to be
regarded by implication or otherwise as in any manner licensing the holder or any
other person or corporation, or conveying any rights or permission to manufacture,
use, or sell any patented invention that may in any way be related thereto.
AEDC.TDR.63-135
VARIABLE RELUCTANCE
PRESSURE TRANSDUCER DEVELOPMENT
By
W. E. Smotherman and W. V. Maddox
von Karman Gas Dynamics Facility
ARO, Inc.
a subsidiary of Sverdrup and Parcel, Inc.
July' 1963
ARO Project'No. VW2920
A? - A1
AT A. T
AEDC.TDR-63-135
ABSTRACT
PUBLICATION REVIEW
iii
AEDC.TDR-63-135
CONTENTS
Page
ABSTRACT ........ ...................... ... iii
1.0 INTRODUCTION ...... ..................... 1
2.0 THE LOW PRESSURE WAFER GAGE
2. 1 Description and Theory of Operation ... ...... 1
2. 2 Performance Characteristics .... ......... 2
2. 3 Iristrumentation System ...... ............ 4
2.4 Calibration ........ ................... 5
3.0 THE LOW PRESSURE, ACCELERATION COM-
PENSATED TRANSDUCER
3. 1 Description and Theory of Operation ... ...... 5
3. 2 Performance Characteristics .... ......... 6
3. 3 Instrumentation System ...... ............ 8
3.4 Calibration ......... .................. 8
4.0 TUNNEL EVALUATION ........ ................ 9
5.0 CONCLUSIONS .......... .................... 10
ILLUSTRATIONS
Figure
I. The Low Pressure Wafer Gage ... ........... . I.11
2. Assembly Section of the Low Pressure Wafer Gage . 11
v
AEDC-TDR-63-135
Figure Page
13. Low Pressure Wafer Gage Response Time ....... .. 19
14. Wafer Gage Half with Meniscus Potting ... ....... 20
15. Wafer Gage with Machined Potting .......... ... 20
16. Low Pressure Wafer Gage Response Traces ........ 21
17. Low Pressure Wafer Gage "in Tunnel" Calibration . 22
vi
AEDC.TDR-63-135
1.0 INTRODUCTION
The low pressure wafer gage, (Fig. 1), is in the shape of a thin
wafer. An assembly section of this unit showing the arrangement of the
outer shell halves, diaphragm, and coils is given in Fig. 2. The outer
shell halves and the diaphragm are fabricated from a low expansion
1
AEDC-TDR-63-135
The internal volume for each side of this gage (excluding pressure
port) is approximately 1. 65 x 10- 4 in. 3 for the machined potting unit
and approximately 4. 5 x 10-4 in. 3 for the meniscus potted one. The
natural frequency of the 0. 0015-in. -thick diaphragm is approximately
3500 cps.
2.2.1 Sensitivity
The output from the low pressure wafer gage transducer is approxi-
mately 100 mv for the full-range (0. 10-psid) pressure. This sensitivity
and the flexibility of the associated readout system allow calibration of
this particular range transducer fo:- full-scale output at 0. 001 psid
(50t Hg). With a typical low pressure wafer gage and its associated in-
strumentation (Fig. 6) calibrated for full-scale output at 0. 001 psid, the
signal to noise ratio is approximately 50 to 1.
2
AEDC-TDR.63-135
The low pressure wafer gage was evaluated with the apparatus
shown in Fig. 9 to determine the effect of environmental density level
changes upon the transducers' output characteristics. From the cali-
bration curve shown in Fig. 10, it can be seen that the sensitivity change
caused by a density level change from i0fj Hg to atmospheric pressure
(and its associated temperature change) is 2 percent or less. This value
is typical of all low pressure wafer gages built to date.
3
AEDC.TDR-63-135
4
AEDC-TDR-63-135
2.4 CALIBRATION
5
AEDC.TDR.63-135
3.2.1 Sensitivity
6
AEDC-TDR-63- 135
Since this transducer was designed for hotshot type tunnel instru-
mentation, only self-induced temperature changes produced by the
transducer's excitation are of serious concern. At an environmental
pressure level of approximately I0tL Hg (absolute) the self-induced tem-
perature rise is approximately 5°F, and at an atmospheric environ-
mental pressure level this temperature rise is approximately 3°F.
7
AEDC-TDR-63-135
Limitations on the system rise time are imposed by the filter which
is employed to attenuate the 3500-cps signal (transducer diaphragm
resonant frequency) from the transducer. Measurements in the pres-
sure range from 0. 001 to 0. 2 psia have shown that with this filter the
minimum possible rise time is 0. 5 msec. This value is approximately
constant throughout the entire pressure range since the filter is the
limiting factor.
3.4 CALIBRATION
8
A EDC-TDR.63.135
During these tunnel tests, it was found that although the low pres-
sure wafer gage is not acceleration compensated, it can be mounted in
such a manner as to virtually eliminate the acceleration effect. With
the, transducer installed so that the plane of the diaphragm is parallel
with the plane of the vibrations, these vibrations have a negligible
effect upon the pressure data traces (Fig. 7). Although the rise time
of this transducer and its mounting configuration is longer than that of
the acceleration compensated unit (Figs. 13 and 8), it is adequate for
most hotshot tunnel applications.
9
AEDC-TDR.63-135
5.0 CONCLUSIONS
10
A ED C-TDR .63.135
Electrical Connector
Transducer
31578-U
0.0015-in..
iaham300
Turna
No . 44 Magnet p~
Wire Co il
iX
__________________0.575 dian
0 Coils
Diaphragm II Electrical Pin
jp Connectors
A EDOC
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Fig. 3 Wafer Gage Components
ABDCA
31577-wU,_t
12
AEDC.TDR.63.135
Excitation
Transducer
5-v,
20-kOscillograph
0-kc
GalvanometerI
13
AEDC.TD R-63.135
101 nsec
2
0
-0.10 -0.08 -0.06 -0.04 -0,02 0 0.02 0.04 0.06 0.08 0.10
Pressure, psid
14
AEDC.TDR.63.135
Recorder
Bell Jar
Micromanometer
15
A ED C-TDR.63-135
• 0.003 __ __ _
C4
0.002
0.001
16
AEDC.TDR-63-135
CA RR IERO
S I L C PE
AMPLIFIER PRESUROCHMBE
VACUUM TUBING-' I
CONNECTION
VACUUM PUMP
CONNECTION'-
17
AEDC.TDR-63-135
.5 in.
18
AEDC.TDR.63-135
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AEDC-TDR-63-135
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AEDC.TDR.63.135
--- Time
a. Low Pressure Wafer Gage 0.003 POia,
2 mse;/Horizontal Division
-- a- T ime,
21
A E DC.TDR-63-135
0.004
Low Pressure Wafer Gage
Serial No. 1-003
6
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22
A EDC.TDR.63.135
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24
AEDC.TDR.63-135
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AEDC.TDR.63.135
Transducer
Accelerometer Signal
Pressure Signal I
Excitation
Pressure Sensor
Accelerometer
11
Fig. 22 Low Pressure, Acceleration Compensated Transducer Schematic
26
AEDC.TDR.63.135
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AEDC.TDR-63.135
Time -
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AEDC-TDR-63-135
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Diagonal Grooves
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AEDC.TDR.63.135
Q)
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a. Acceleration Compensated Transducer, 0.002 psia,
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b. Acceleration Compensated Transducer, 0.10 psia,
500 p.secIHorizontal Division
35
P
AE DC.TDR.63.1 35
0.004- ________
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-36
AEDC.TDR-63.135
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o 10 Msec, typ
37