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FDTD analysis of shielding in high-tc microstrip resonators on anisotropic

substrates

Conference Paper · July 2012

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 European Electromagnetics Symposium, 2 6 July 2012. Touloue. France.

FDTD Analysis of Shielding in High-Tc Microstrip

Resonators on Anisotropic Substrates
Mohamed Lamine Tounsi
Faculty of Elec. and Inform. USTHB
P.O. 32, El-Alia, Bab Ezzouar, 16111.
Algiers, Algeria
Othmane Madani, Messaoud Bensebti Mustapha C.E. Yagoub
Laboratoire des radiocommunications EECS, University of Ottawa
mobiles, University Saad-Dahlab 800 King Edward, Ottawa, Ontario,
P.O. 270, Blida, Algeria K1N 6N5, Canada

Abstract— In this paper, we present a hybrid-mode analysis of
shielded high temperature Tc superconducting (HTS) microstrip
resonators using the finite difference time domain method. The
temperature dependence on resonant frequency and bandwidth
are investigated assuming an anisotropic dielectric substrate.
Variations of resonant frequency with high Tc superconducting
thickness are also presented.
also investigated in Figure 2(a), showing more effect for small
values of t. Finally, in Figure 2(b), the shielding effect shows a
decrease in resonant frequencies when b (height of top cover)
increases. This decrease is more important for small values of
b (b=2h and b=3h). When b exceeds ‘10h’ no variation in the
resonant frequencies was observed.
9.5 4.0

Resonant Frequency (GHz)

Keywords – shielding, microstrip resonator, superconductor,
9.4 3.5
anisotropy, UWB, FDTD method.
3.0

Bandwidth (%)
9.3 a
2.5
I. INTRODUCTION >L
H t b
9.2 G 2.0
Because of their low-loss characteristics, high temperature h
ǁ 1.5
9.1
Our results (εxx=εzz=9.4, εyy=11.6)
Tc superconducting (HTS) passive microwave devices have [2] Modelled (anisotropic sapphire)
1.0
9.0
shown significant preeminence over related devices fabricated [2] Measured
Our results (isotropic case ε =9.4)
0.5
with normal conductors. Especially, superconducting filters 8.9 r

0.0
40 50 60 70 80 90 40 50 60 70 80 90
are thought to be one of the most effective applications for Temperature (K) T em perature (K )
HTS circuits [1]. To the best of our knowledge, no work has (a) (b)
been carried out on the study of the resonance characteristics Figure 1. Resonant frequency and bandwith versus temperature
of HTS resonators and filters on anisotropic substrates using a (W=0.5mm, G=0.352mm, L=5.78mm, h= 5mm, a=5.1 mm, b=10 h , Tc=88K,
time domain method. Shielding effect is an important task for λL(0) =0.16 μm, σn= 3.106 S/um, t=0.2 μm)
electromagnetic compatibility (EMC) design, the presence of 9.50
Resonant Frequency (GHz)

Resonant frequency (GHz) 1 0 ,2 b=2h

conducting top and side walls can significantly change the 9.25 1 0 ,0
resonance characteristics. In this paper, a finite difference time 9.00 9 ,8
b=3h
domain (FDTD) analysis of shielded HTS microstrip resonator 8.75
9 ,6 b=4h
9 ,4
on anisotropic substrate yields good agreement with published 8.50
9 ,2 b=5h
data [2]. The resonator is of arbitrary thickness and can 8.25 9 ,0
b=10h

operate within the UWB band by adjusting its dimensions. 8.00 8 ,8

0 100 200 300 400 40 50 60 70 80 90
II. THEORY Thickness t (nm ) T e m p e r a tu r e ( K )
(a) (b)
To simulate HTS resonators, Maxwell's equations were
solved by FDTD method [3]. The two-fluid model was used to Figure 2. Resonant frequency versus the thickness of the HTS film (T=50K)
describe the superconductor with a complex conductivity. An and top cover effect
arbitrary thickness was introduced [4] without meshing the REFERENCES
superconductor including anisotropic media. Perfect electric
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involving maxwell’s equations in isotropic media”, IEEE Trans.
isotropic and anisotropic sapphire substrates is presented in Antennas Propagat., vol. 14, pp. 302–307, May 1966.
figure 1(a), showing good agreement with [2]. Figure 1(b) [4] S. Protat, C. Delabie, O. Picon, and M. Villegas, “Improved FDTD Tool
shows that the effect of temperature on the bandwidth of the for the Analysis of Arbitrarily Thick HTC Superconducting Planar
YBCO superconducting resonator is significant near the Lines”, Electronics Letters, vol. 36, pp. 17-19 no. 1, 2000.
critical temperature Tc. The thickness effect of the HTS film is

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