Microelectronic Engineering 220 (2020) 111155

Contents lists available at ScienceDirect

Microelectronic Engineering
journal homepage: www.elsevier.com/locate/mee

Research paper

Near-field coupling derived plasmon-induced transparency and Fano dip in T

symmetry-broken terahertz metamaterials by the “sketch and peel”
lithography process
Xupeng Zhua,1, Shi Zhangb,1, Yiqin Chenb, Huimin Shic, Junhu Zhoud, Peiren Tange, Yasi Wangb,
Dongsheng Yangd, Liguo Zhue, Tian Jiangd, Jun Quana, Jun Zhanga, , Huigao Duanb,
⁎ ⁎

a
School of Physics Science and Technology, Lingnan Normal University, Zhanjiang 524048, China
b
College of Mechanical and Vehicle Engineering, State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha 410082,
China
c
Center for Research on Leading Technology of Special Equipment, School of Mechanical and Electric Engineering, Guangzhou University, Guangzhou 510006, China
d
College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
e
Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China

ARTICLE INFO ABSTRACT

Keywords: Terahertz (THz) metamaterials and their assemblies with strong Fano resonance are of fundamental interest and
Plasmon-induced transparency have potential applications in modulators, slow-light devices and THz sensing. Here, we demonstrate that near-
Fano resonance field coupling dominated Fano-dip and plasmon-induced transparency can be simultaneously generated in a THz
Near field coupling metamaterial by introducing a symmetry-breaking nanogap. We fabricated the designed metamaterials THz
Terahertz range
structures using our lately developed “sketch and peel” lithography process, which can obtain the multi-scale
“Sketch and peel” lithography
micro/nano-structures with small gap size and high fabricating efficiency. Both experimental and numerically
simulated spectra show that the physical origin of Fano dip and plasmon-induced transparency are the near-field
coupling derived destructive interference between two overlap plasmon resonance modes, and their specific
manifestation depends on the coupling intensity between two overlapped plasmon modes. Enabled by the strong
near field in the THz nanogaps, the numerical results show that the refractive index sensitivity of Fano dip and
plasmon-induced transparency can be as high as 153 GHz/RIU and 236 GHz/RIU with a 500 nm small feature
size, respectively. Our study not only provides an insight to understand the different spectral manifestation of
Fano resonance in THz metamaterials, but also a possible straightforward path to achieve ultra-sensitive micro/
nano-scale THz refractive index sensing.

1. Introduction
Artificial periodic structures, known as metamaterials, enable an
unprecedented control and precise manipulation to the electromagnetic
wave propagation, and realizing some emergent and interesting phe-
nomena which are far beyond the ability of naturally occurring mate-
rials. The exotic properties of metamaterials can be perfectly demon-
strated by super-resolution imaging [1,2], flat optics metasurfaces [3,4],
negative refractive index [5,6], slow-light effect [7,8], electromagnetic
cloaking [9] and sensing [10–12]. Besides, using some properties of
metamaterials to realize the effective terahertz (THz) wave manipulation
also have a specific significance due to the lack of effective electronic
response and quantum photonic response of naturally occurring
materials in the THz frequency range [13–18]. One of the prime ex-
amples is the mimicking quantum phenomena of two Fano-resonance
manifestations in classical metamaterial systems, asymmetric spectral
profile (e.g. asymmetric Fano-dip) and plasmon-induced transparency
(PIT) phenomenon, which play vital role in THz applications such as
biosensors [19–22], slow light effect [23,24], modulators [25,26] and
plasmonic switch [13,27] due to their narrow bandwidth.
In essences, the symmetric maximum electromagnetic response of
the metamaterials gives it some resonance properties, which can be
identified as different plasmon modes. In coherent interference of two
different modes, the energy overlap of one mode to another could be
engineered to generate special transmission features with narrow and
asymmetric line shape [28–30]. Such asymmetric transmission profile

⁎
Corresponding authors.
E-mail addresses: zhangjun@lingnan.edu.cn (J. Zhang), duanhg@hnu.edu.cn (H. Duan).
1
These authors contributed equally to this work.

https://doi.org/10.1016/j.mee.2019.111155
Received 16 May 2019; Received in revised form 23 September 2019; Accepted 7 October 2019
Available online 02 November 2019
0167-9317/ © 2019 Published by Elsevier B.V.
X. Zhu, et al. Microelectronic Engineering 220 (2020) 111155

Fig. 1. (a) Schematics of the unit cell. The geometrical parameters are: L = 85 μm, l = 29 μm, S1 = 7 μm, w = g = 5 μm, Px = 120 μm, Py = 80 μm, h = 150 nm and
hs = 2 mm, respectively. Px and Py is the array structural period in x- and y-axis, respectively. S2 is a symmetry-breaking variable parameter. (b) Schematic illus-
tration of the fabrication flow of gold DCSR metamaterials with the SPL patterning method. (c) The optical image of asymmetry DCSR array. Inset: the enlarged
optical image of a randomly selected DCSR. h = 50 nm and S2 = 500 nm. (d) The SEM image of asymmetry DCSR array. Inset: the enlarged SEM image of a feature
gap for a specific DCSR. h = 150 nm and S2 = 330 nm. (For interpretation of the references to color in this figure legend, the reader is referred to the web version of
this article.)

of classical metamaterial was classified to a manifestation of Fano-type
resonance by analogizing the Fano resonance, which was first dis-
covered in quantum mechanics involving the constructive and de-
structive interference of a broad spectral line with a narrow discrete
resonance [31]. Another specific manifestation of Fano-type resonance
in classical metamaterial systems is plasmon-induced transparency
phenomenon, in which a sharp transparency window was induced in a
broad transmission dip by Fano-type linear destructive interference
[32–34]. Recently, both the asymmetric line shape and PIT effect have
been theoretically and experimentally studied in different THz meta-
material structures. Although investigating and understanding the
above two quantum analogy effects in one single THz metamaterial are
of great importance in promoting the application of metamaterials in
THz wave manipulation, slow-light and THz biosensors, the related
research is scarce.
In this work, we performed a systematic and in-depth study on the
formation and origin of two manifestations (asymmetric Fano dip and
PIT effect) of Fano-type resonance in double cut-wires and split-rings
resonator (DCSR, as shown in Fig. 1a) THz metamaterials' transmission
spectra. When a structure symmetry-breaking(S1 ≠ S2) was introduced
into the DCSR THz metamaterials, generating an asymmetric trans-
mission profile Fano dip and PIT effect simultaneously in transmission
spectrum. With the increase of the symmetry breaking, the Fano dip
and PIT feature of THz transmission spectrum become more pro-
nounced. Besides, because of the intensity difference of near-field
coupling derived destructive interference between two overlap plasmon
modes, the Fano dip and PIT feature of THz transmission spectra exhibit
opposite shift direction and various shift rate. Numerically calculated
THz response spectra and the experiment results of DCSR THz meta-
materials (fabricated by the “sketch and peel” lithography process, SPL)
are well correlated, which both can be qualitatively described by
plasmon hybridization model [35]. In addition, the numerical calcu-
lated refractive index sensitivity of Fano dip and PIT feature was as high
as 153 GHz/RIU and 236 GHz/RIU, respectively. Our study provides an
insight to understand the spectral manifestation of Fano resonance in
metamaterials, as well as a possibility to manipulate THz wave and an
ultra-sensitive THz refractive index sensor with small feature size in a
more flexible way.
2. Results and discussion
Fig. 1(a) is the schematic illustration of the designed unit cell of
DCSR THz metamaterials, which consists of two gold cut wires (CWs)
and two gold split-ring resonators (SRRs) on a quartz (SiO2) substrate.
Specifically, the two gold SRRs with several fixed parameters of l, g and
w were caught in the two gold CWs with the length and width identi-
cally equal to that of L and w respectively. The structure parameters, h,
hs, Px and Py is the thickness of DCSR metamaterials, the thickness of
SiO2 substrate, the array structural period in x- and y-axis, respectively.
The spaces between CWs and SRRs and were labeled as S1 and S2, in
which S1 is a fixed parameter while S2 is a variable parameter for in-
troducing the symmetry-breaking into the whole structure. As S1]S2,
the DCSR unit cell is a symmetry configuration. To enlarge the plasmon
near-field coupling strength in DCSR THz metamaterials, the symmetry-
breaking variable parameter S2 should be as small as possible and keep
the uniformity along the whole feature gap. This is extremely challen-
ging, even unrealistic, for conventional photolithography patterning
due to the limit of classical optical diffraction limit and the great
challenge in fabricating high-quality mask.
As a prime technology for ultra-high-precision fabrication, con-
ventional electron-beam lithography (EBL) patterning process always
suffers from the unavoidable proximity effect and low yield due to the

2
X. Zhu, et al.
Fig. 2. The plane sketch and corresponding experimental and simulated transmission results of DCSR THz metamaterials under different polarization. (a1–a3) The
polarization of incident THz wave is parallel to feature gap(x-polarization). (b1–b3) The polarization of incident THz wave is perpendicular to feature gap(y-
polarization).
limit area exposure speed which greatly hinders its application in the
mass production of array structures with relatively large size (generally
ups to hundreds of micrometers). Specific to our DCSR, a typical multi-
scale array structure with the feature size ranging from about 330 nm to
85 μm, which is time and cost-consuming for conventional EBL process.
To address above problem, we take our recently developed “sketch and
peel” lithography (SPL) approach [36,37], which well mitigates the
proximity effect and decreases the exposure time, achieving better re-
solution over large areas at the same time. Different from the conven-
tional EBL process need to expose the whole area of designed structures,
the SPL approach only needs to expose the outlines of designed struc-
tures, resulting in improved fabricating efficiency and resolution, so
larger traditional EBL patterning area corresponds to higher efficiency
of the SPL process. The SPL process is able to fabricate multiscale
hierarchical metallic structures with arbitrary shapes and minimal
feature size of ~15 nm, which enables its huge potential and prospect in
nanoelectronic and nano-optical applications [37]. Fig. 1b shows the
SPL fabrication process of the DCSR metamaterials. Briefly, a hydrogen
silsesquioxane (HSQ) resist layer was spin-coated on a SiO2 substrate,
and then the outline of the designed DCSR was sketched on the HSQ
layer by a focused electron beam, followed with the development in a
3
Microelectronic Engineering 220 (2020) 111155
sodium hydroxide (NaOH) solution to obtain an HSQ template (Step I).
Subsequently, a gold film was conformally evaporated on the template
(Step II), on which an adhesive polymer layer was poured to selectively
peel off the gold at the top and outside of the template (Steps III and
IV). Finally, the HSQ template can be selectively removed by hydro-
fluoric acid etching or not according to the specific application (Steps
V). Note that in this work, the HSQ template was kept since it almost
has no influence on our study due to its transparency in the spectral
range of interest. Fig. 1c shows the optical image of a 150 nm-thick
DCSR array structure with good uniformity over the whole visible re-
gion, indicating the excellent reliability and high yield of the SPL
process. The enlarged optical image of a randomly selected DCSR in the
inset in Fig. 1c shows a smooth surface, uniform width and high-quality
edges of designed structure in a clearer way. Fig. 1d shows the scanning
electron microscopy (SEM) image of a large area DCSR array with the
thickness h of 150 nm, which also exhibits high uniformity over the
whole area. As shown in the inset in Fig. 1d, the enlarged SEM image of
a specific DCSR reveals a feature gap of ~330 nm, further confirming
the excellent capability of the SPL process for direct and reliable defi-
nition of DCSR metamaterials.
To better understand the influence of structure symmetry-breaking
X. Zhu, et al.
Fig. 3. (a) The simulated THz transmission spectra of the DCSR array as the feature gap size S2 decreased from 7000 nm to 50 nm. (b) and (c) The corresponding
electric field distribution and charge distribution at different feature position. I: S2 = 7000 nm, II, III: S2 = 500 nm. (d) and (e) The hybridization schemes of plasmon
modes in symmetry and asymmetry DCSR THz metamaterials, respectively.
on the transmission behavior of the designed system, we first in-
vestigate the spectral behavior of symmetry (S1 = S2) DCSR THz me-
tamaterials (x-polarization). As shown in Fig. S1, the transmission
spectra of the symmetry DCSR structure in x polarization only displays
a broad transmission dip at different parameters. The response of DCSR
THz metamaterials to the change of structural parameter is un-
diversified, meaning the low degrees of freedom in controlling the
corresponding THz wave behavior. When a structure symmetry-
breaking (perpendicular to the incident polarization, S1 ≠ S2) was in-
troduced, the spectral behavior of the system was present in a more
complex way, in which two complex transmission spectral features are
simultaneously generated (shown in Fig. 2). In order to fully understand
the effect of symmetry-breaking on the spectral behavior of the de-
signed system, we systematically carried out the numerical simulation
and experimental study on the THz transmission response features both
in symmetric (S1 = S2 = 7000 nm) and symmetry-broken
(S1 = 7000 nm, S2 = 330 nm) DCSR metamaterials at different polar-
ization direction. Fig. 2a1 shows the plane sketch of DCSR THz meta-
materials with x-polarized incidence. For the symmetric configuration
(S1 = S2 = 7000 nm), only a broad dip was appeared in the THz
transmission spectrum when the incident polarization is parallel to
feature gap (x-polarization) as shown by the simulated and experi-
mental results in Fig. 2a2 and a3, respectively. While the symmetry-
broken configuration (S2 = 330 nm) demonstrates a quite different
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Microelectronic Engineering 220 (2020) 111155
transmission feature. An asymmetric transmission profile (Fano dip)
and PIT effect is simultaneously appeared in the simulated result of the
symmetry-broken configuration in Fig. 2a2. Also, the corresponding
experimental intrinsic THz transmission spectrum provides the solid
support for the simulated result that the same Fano dip and PIT effect
are observed in the experimental result in Fig. 2a3. The experimental
and simulated results well verified the feasibility and flexibility of our
designed symmetry-broken system in controlling THz wave. The dif-
ference between the simulated and experimental results may originates
from the rudimental HSQ template (dominate the low-frequency shift of
spectrum), the mismatch between feature gap size and THz wavelength
(dominate the smoothness of spectrum) in simulation process, the slight
materials properties difference between gold and PEC, and the intrinsic
parameters of terahertz time domain spectroscopy (dominate the in-
tensity and width of spectrum). As shown by the plane sketch in
Fig. 2b1, for the polarization of incident THz wave is perpendicular to
the feature gap (y-polarization) of DCSR THz metamaterials, the si-
mulated (Fig. 2b2) and experimental (Fig. 2b3) transmission results only
demonstrate a single transmission dip at the frequency of around 1 THz,
no matter the designed structure is symmetric (black solid line) or
symmetry-broken (red solid line). The low-frequency shift, as the S2
decreased from 7000 nm to 330 nm, attributes to the increase equiva-
lent capacitance with the decrease of feature gap size [3], meaning that
the designed DCSR THz metamaterials are insensitive to the x-polarized
X. Zhu, et al.
Fig. 4. (a) and (b) The changes of asymmetric Fano dip and PIT window properties as the refractive index of dielectric environment increase from 1 to 1.8.
S2 = 500 nm. (c) and (d) The corresponding feature position of the asymmetric Fano dip and PIT window in (a) and (b).
incidence. Therefore, we focus our study on the effect of structural
symmetry-breaking on its THz transmission behavior of the designed
structure under x-polarized incidence.
To understand the formation process and origins of an asymmetric
transmission Fano dip and PIT phenomenon in DCSR THz metamater-
ials transmission spectrum with x-polarized incidence, we first carried
out the simulated THz transmission spectra of the DCSR array with the
feature gap size decreased from 7000 nm to 50 nm, as shown in
Fig. 3(a). For the symmetric structure configuration
(S1 = S2 = 7000 nm), a broad dip at 1.191 THz appears in the THz
transmission spectrum, (labeled as I). The weak Fano dip with an
asymmetric transmission profile and ultra-narrow PIT phenomenon si-
multaneously appears in its transmission spectrum when the symmetry-
breaking was introduced into the DCSR THz metamaterials
(S2 = 5000 nm). With the decrease of S2, on the one hand, the trans-
mission spectra depicted a more obvious asymmetric transmission Fano
dip and a larger low-frequency shift speed (indicated by the red dashed
line, the position of asymmetric dip with S2 = 500 nm was labeled as II,
0.733 THz). On the other hand, the ultra-narrow PIT peak become
wider and stronger, as well as a fewer high-frequency shift rate (in-
dicated by the black dashed line, the position of PIT peak with
S2 = 500 nm was labeled as III, 1.224 THz). Fig. 3b and c show the
corresponding electric field distribution and charge distribution at
different feature position of the DCSR THz metamaterials with the
S2 = 7000 nm (I) and S2 = 500 nm (II, III). From Fig. 3b and c, the
oscillation mode of position I can be regarded as bonding (Fig. 3d, DB
mode) hybridized resonances formed by the interaction of the CWs
electric dipole plasmon(Fig. 3d, DCWs mode) with the SRRs electric
dipole plasmon(Fig. 3d, DSRRs mode), while the oscillation mode of
position II and III can be regarded as bonding (Fig. 3e, IMQB mode) and
antibonding (Fig. 3e, IMQAB mode) hybridized resonances caused by
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Microelectronic Engineering 220 (2020) 111155
the interaction of the induced CWs electric quadrupole plasmon
(Fig. 3e, IQCWs mode) with the induced SRRs magnetic dipole plasmon
(Fig. 3e, IMSRRs mode). Besides, according to the charge distribution at
1.316, 0.904, 0.840 and 0.637 THz in Fig. S2, a new bonding (Fig. 3e,
IMDB mode) and antibonding (Fig. 3e, IMDAB mode) hybridized re-
sonances formed due to the interaction between the CWs electric dipole
plasmon (Fig. 3e, DCWs mode) and the induced SRRs magnetic dipole
plasmon (Fig. 3e, IMSRRs mode). It should be noted that the original
plasmon modes (DCWs, DSRRs) were defined and explained in Fig. S3 to
avoid the analytic complexity. Both the IQCWs (electric quadrupole
mode in CWs) and IMSRRs (magnetic dipole mode in SRRs) are dark
plasmon modes which can be indirectly excited by the near-field cou-
pling with these bright modes rather than be directly excited by in-
cident light. Thus, the original dark plasmon modes (IQCWs, IMSRRs) can
be separated from the charge distribution in Fig. S2. As shown in Fig. 3e
and d, the coupling between these original plasmon modes (DCWs,
DSRRs, IQCWs, IMSRRs) forms the new hybridized resonances (IMDB,
IMDAB, IMQB, IMQAB), in which the red color represents the positive
charge and the blue color represents the negative charge, respectively.
Ultimately, the destructive interference between the IMDAB and IMQB
leads to an asymmetric transmission Fano dip in low-frequency range,
and the destructive interference between the IMDAB and IMQAB induces
a PIT peak in high-frequency range. According to the classification
method of coupled plasmon radiance [38], the asymmetric transmission
Fano dip here demonstrates the typical features belonging to the weak
and intermediate interactions owning to the large low-frequency shift
speed (Fig. 3a, red dashed line) and large electric field enhancements
(Fig. 3b II, a huge electric field enhancement in the feature gap). At the
same time, the PIT effect presents the classical features belonging to
strong interaction because of the powerful tunable and exchangeable
energies between two overlapped oscillation modes (a transparency
X. Zhu, et al.
window in THz transmission dip and a small electric field enhancement
in the feature gap, as shown in Fig. 3a and b III).
To investigate the response of the asymmetric Fano dip and PIT
window properties of the DCSR THz metamaterials to the change of its
dielectric environment surrounded, we simulated the transmission
spectral of the DCSR THz metamaterials that covered by various di-
electric layers. The refractive index, n, is ranging from 1 to 1.8 with a
step size of 0.2 during the simulation. Fig. 4a and b show the feature
position shift of the asymmetric Fano dip and PIT window in the DCSR
THz metamaterials (S2 = 500 nm), respectively. With increasing the
refractive index, both the feature position of the asymmetric Fano dip
and the PIT window exhibit a behavior of quasi-linear low-frequency
shift (Fig. 4c and d). Benefiting from the small feature size, the re-
fractive index sensitivity (RIS, RIS = △(feature position shift)/△(re-
fractive index change)) of Fano dip and PIT window can be as high as
153 GHz/RIU and 236 GHz/RIU, respectively. The excellent perfor-
mances of the refractive index sensitivity here is much higher than the
latest work reported result of 96.2 GHz/RIU(the highest refractive
index sensitivity to date) [39]. Therefore, our study provides a potential
structure configuration and strategy to obtain an ultra-sensitive THz
refractive index sensor with a small feature size.
3. Conclusions
In conclusion, we design a new DCSR THz metamaterials config-
uration and systematically investigated the formation process and ori-
gins of the asymmetric transmission Fano dip and PIT effect of the
designed structure when a symmetry-breaking was introduced.
Combining the simulation and experiment, we confirm the two mani-
festations of Fano-type resonance in our structure, asymmetric line
shape (Fano dip) and PIT, which determined by the intensity of near-
field coupling derived destructive interference between two overlap
plasmon modes. Besides, our system also presents a high Fano dip and
PIT feature sensitivity, respectively ups to 153 GHz/RIU and 236 GHz/
RIU, to its surrounding refractive index. The designed DCSR THz me-
tamaterials provides a potential effective configuration for ultra-sensi-
tive THz refractive index sensor, as well as a platform to inspire the
insight to explore and understand the spectral manifestation of Fano-
type resonance in practical metamaterials.
Declaration of Competing Interest
All authors declare that they have no conflict in financial interests
or personal relationships that could have appeared to influence the
work reported in this paper. All authors have seen and approved the
final version of the manuscript being submitted and agree to submit this
manuscript to Microelectronic Engineering.
Acknowledgments
We gratefully acknowledge financial support from the National
Natural Science Foundation of China (Grant nos.11274107, 11574078
and 61674073), the Foundation for the authors of National Excellent
Doctoral Dissertation of China (201318), the Natural Science
Foundation of Hunan Province (2015JJ1008, 2015RS4024), the
Science and Technology Planning Project of Guangdong Province
(No.2017A050506056), the Key Basic and Applied Research Project of
Guangdong Province (No.2016KZDXM021), and the Scientific Research
Project of Lingnan Normal University (ZL1937). We additionally would
like to thank Feng Xiong, Professor Ken Liu, Huan Zhao, Professor Yan
Zhang for their stimulating discussions and comments.
Appendix A. Supplementary data
Supplementary data to this article can be found online at https://
doi.org/10.1016/j.mee.2019.111155.
6
Microelectronic Engineering 220 (2020) 111155
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