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Lanchao Ma, Zhengang Li, Bing Chen, Xiaojian Zheng, Haiying Xie, Chengliang Ji,
Xiaowei Zhan, Yunqi Liu, Xingguo Chen
PII: S1566-1199(23)00165-9
DOI: https://doi.org/10.1016/j.orgel.2023.106909
Reference: ORGELE 106909
Please cite this article as: L. Ma, Z. Li, B. Chen, X. Zheng, H. Xie, C. Ji, X. Zhan, Y. Liu, X. Chen,
Comparative studies on frontier orbitals, molecular packing and optoelectronic properties of ambipolar
polymer semiconductors based on bisthiophene-fused diketopyrrolopyrrole, Organic Electronics (2023),
doi: https://doi.org/10.1016/j.orgel.2023.106909.
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Lanchao Ma*†, Zhengang Li†, Bing Chen‡, Xiaojian Zheng§, Haiying Xie†, Chengliang
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Ji†, Xiaowei Zhan§, Yunqi Liuǁ, Xingguo Chen*‡
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Comparative studies on frontier orbitals, molecular packing and
†
College of New Materials and Chemical Engineering, Beijing Key Laboratory of
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Special Elastomer Composite Materials, Beijing Institute of Petrochemical Technology,
Beijing 102617, China
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Hubei Key Laboratory on Organic and Polymeric Optoelectronic Materials, College
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of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China.
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School of Materials Science and Engineering, Peking University, Beijing 100871,
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China
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Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic
Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
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Abstract
Ambipolar field-effect transistors based on polymer semiconductors facilitate the
convenient fabrication of low-power complementary organic circuits. However, the
species of ambipolar polymer semiconductors are limited; the design and synthesis
strategies are scarce. This work demonstrated that bisthiophene-fused
diketopyrrolopyrrole (DPPFu) was a wonderful building unit for ambipolar polymer
semiconductors. Ambipolar polymer semiconductors could be obtained by
copolymerizing DPPFu with both electron-deficient comonomers and electron-rich
comonomers. P(DPPFu-T), P(DPPFu-TT) and P(DPPFu-BT) were synthesized by
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copolymerizing DPPFu with thiophene, thienothiophene and benzothiadiazole,
respectively. The structural variation of comonomers allowed for a systematic study on
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the relationship between comonomer structure, frontier orbital energy level, orbital
delocalization index, molecular packing, film morphology and the corresponding
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charge transport properties. Thienothiophene endowed P(DPPFu-TT) with maximum
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transport property with hole mobility up to about 0.1 cm2V–1s–1 and electron mobility
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1. Introduction
Ambipolar field-effect transistors (FETs) facilitate the fabrication of
complementary logic circuits, and endow the integrated circuits with low power
dissipation, wide noise margins and high robustness.1-3 As an important component for
ambipolar FETs, the semiconductor layer could conduct both electrons and holes.
Polymer semiconductors are of versatile chemical synthesis and solution processing,
which provides opportunities for low-cost fabrication of large-area flexible devices
such as smart cards, bendable displays, and radiofrequency identification (RFID) tags.4-
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Consequently, ambipolar polymer semiconductors are attracting more and more
research interest.
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Donor-acceptor (D-A) strategy is widely used in the design of high-performance
polymer semiconductors for FETs. D-A copolymers offer significant potential in
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achieving tunable energy levels, robust intramolecular charge transfer (ICT), and
intermolecular interactions between adjacent polymer chains. Among the most
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commonly used donor moieties are thiophene and its derivatives; while lactam, imide
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determined by the relative strength of donor and acceptor components.10 For example,
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structure of polymer semiconductors, thus modulating charge carrier type and transport
property. Bisthiophene-fused DPP (DPPFu), a building block comprising both DPP
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(with electron-withdrawing properties) and thiophenes (with electron-donating
properties),10, 20, 21, 22 has been utilized to construct ambipolar semiconductors. PBDTT-
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DPPFu, consisting of benzo[1,2-b:4,5-b′]dithiophene (BDTT) as the donor and DPPFu
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as the acceptor unit,20 was synthesized and compared to the unfused counterpart,
PBDTT-DPP. The hole mobility of PBDTT-DPPFu was about 1.8×10-3 cm2V–1s–1,
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which was over one order of magnitude higher than that of PBDTT-DPP, while the
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electron mobility of PBDTT-DPPFu was about 1.0×10-2 cm2V–1s–1, which was more
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than two times that of PBDTT-DPP. The results of UV-vis spectroscopy, DFT
calculation, ESP and vdW analyses, as well as XRD implied that ring-fusion methods
provided a robust approach to enhancing interchain interaction between chain segments
in polymer semiconductors.
In the construction of optoelectronic materials, DPPFu is often employed as an
electron acceptor and copolymerized with electron donors to construct D-A
copolymers.21 However, systematic investigation of polymer semiconductors based on
DPPFu remains limited. When utilizing bisthiophene-fused DPP as a building block for
copolymer semiconductors, several issues require analysis: 1. How does the double
bond in the fused ring impact the spatial and electronic structure of the DPPFu? 2. How
does the structure of comonomers affect the spatial configuration, molecular weight of
the copolymers, and chain packing in the thin films? 3. How does the electronic
property of comonomers affect the absorption spectra, frontier orbital energy levels,
charge carrier type and carrier mobility of the copolymer semiconductors?
In this work, DPPFu was synthesized by fusing the two N atoms in the DPP unit
with two flanking thiophenes, yielding a π-expanded, planar fused-ring building
block.21, 23-25
Additionally, 2-octyldodecyl side chains were attached to the fused
benzene rings to ensure good solubility of the building block. P(DPPFu-T), P(DPPFu-
TT) and P(DPPFu-BT) were synthesized by copolymerizing DPPFu with thiophene,
thienothiophene and benzothiadiazole, respectively. The molecular weight, absorption
spectrum, energy levels, and frontier orbital distribution of the copolymer
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semiconductors were compared. The relationship between the structure of copolymer
semiconductors and their molecular packing, film morphology and charge transport
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properties was also systematically investigated.
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2. Results and discussion
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references.24, 26 Thiophene ditin, thienothiophene ditin and benzothiadiazole diboric acid ester were
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featuring DPPFu was often smaller than that of their unfused counterparts.20, 22 The
main reason was that the DPPFu was more rigid than its unfused counterpart and caused
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larger steric hindrance in the coupling reaction. The polymer semiconductors exhibited
high thermal stability, with decomposition temperatures above 370℃.
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To predict how comonomers can impact the spatial and electronic features of
polymer semiconductors, theoretical calculations were performed to evaluate the
dihedral angels, frontier orbital energy and orbital delocalization index (ODI) of these
polymer semiconductors. Density function theory (DFT) was employed in these
calculations, and geometries were optimized at the B3LYP level. For computational
simplicity, models comprising two repeating units (DPPFu-T_×2, DPPFu-TT_×2 and
DPPFu-BT_×2) were used, with branched alkyl chains replaced with methyl groups
(Figure 1). The absence of bulky branched alkyl chains resulted in all backbones
exhibiting good coplanarity. The dihedral angles between DPPFu and comonomers
were roughly 0.02°, 0.008° and 0.443° for DPPFu-T_×2, DPPFu-TT_×2 and DPPFu-
BT_×2, respectively. The dihedral angle in DPPFu-BT_×2 was slightly larger than that
in DPPFu-T_×2 and DPPFu-TT_×2. Additionally, the bond length between DPPFu and
comonomers in DPPFu-BT_×2 was about 0.02 Å longer than that in DPPFu-T_×2 and
DPPFu-TT_×2. The larger dihedral angle and longer bond length in DPPFu-BT_×2
could primarily be attributed to the steric hindrance caused by benzothiadiazole. Upon
the introduction of bulky side chains, the dihedral angle between diketopyrrolopyrrole
and fused thiophenes remained stable, while the dihedral angle between DPPFu and
comonomers likely increased.
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Using geometry optimization, ODI was calculated via the Multiwfn program with
Hirshfeld method as the base.27, 28 A smaller ODI value indicates that the orbitals are
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more spatially delocalized, with the orbitals being distributed across more atoms within
the molecule.20 The ODI versus molecular orbital index of DPPFu-T_×2, DPPFu-
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TT_×2 and DPPFu-BT_×2 (from LUMO +10 down to HOMO-10) was plotted for
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T_×2 and DPPFu-TT_×2, but it was unfavorable for LUMO delocalization in DPPFu-
BT_×2. In terms of changes in the HOMO and LUMO levels, fusion decreased the
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HOMO-LUMO gap by 0.2-0.3 eV. Therefore, fusion is a feasible approach to achieving
narrow-bandgap polymer semiconductors with good planarity.
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Solution Film
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a
λmax λmax λonset Egopt
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Table 1-2 Redox potentials and energy levels of the polymer semiconductors
a b
Polymer Eox(V) Ered(V) HOMO(eV) LUMO(eV) EgCV(eV)
HOMO is short for highest occupied molecular orbital and LUMO is short for lowest unoccupied molecular orbital.
LUMO levels and HOMO levels are estimated from the onset reduction and oxidation potentials, respectively.
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Figure 2 (a) UV-vis-NIR absorption spectra of polymer semiconductors in thin
films; (b) cyclic voltammogram (CV) curves of polymer semiconductors.
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absorption range from 350 nm to 1000 nm. The absorption onset of P(DPPFu-BT)
solution reached 1100 nm, indicating efficient intramolecular charge transfer
originating from D-A structure along the backbone. The extensional absorption of
P(DPPFu-BT) solution was attributed to the introduction of benzothiadiazole with
strong electron-withdrawing ability, which endowed the polymer with strong electron
pull-push characteristics.
Comparing with the absorption of solutions, the absorption peaks of the
corresponding thin films all red-shifted. The shoulder peak was very apparent for the
absorption spectrum of P(DPPFu-TT) thin film; there was a tendency to form a shoulder
peak in the absorption spectrum of P(DPPFu-T) thin film; and the shoulder peak was
absent in the absorption spectrum of P(DPPFu-BT) thin film. The shoulder peak was
greatly related to the chain interactions through π-π stacking induced aggregation.
Among the comonomers of thiophene, thienothiophene and benzothiadiazole,
thienothiophene was the most beneficial for forming strong π-π interactions in
P(DPPFu-TT); and benzothiadiazole hindered the formation of strong π-π interactions
in P(DPPFu-BT).
The structural formula of polymer semiconductors made it clear that the adjacent
branched alkyl chains were in close proximity, causing significant steric hindrance, and
leading to torsion of polymer backbone, which was detrimental to molecular
organization in thin films (Scheme 1). In contrast, reducing steric hindrance could
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enhance molecular organization as exemplified by PDPP7T, where the branched alkyl
chains on DPP were spaced by septetthiophene. The sharp and intense shoulder peak in
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the absorption spectrum of PDPP7T confirmed its excellent molecular organization.16
Cyclic voltammetry (CV) curves were measured to quantitatively investigate the
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effect of different comonomers on the redox potential and frontier orbital energy levels
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for these polymers (Figure 2).12 The frontier orbital energy was calculated according to
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Among the polymers studied, P(DPPFu-BT) exhibited the lowest LUMO and HOMO
energy levels and the smallest electrochemical gap.
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Figure 3 Grazing incidence X-ray diffraction (GIXRD) of polymer semiconductor
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films. 2D GIXRD patterns of (a) P(DPPFu-T), (b) P(DPPFu-TT) and (c) P(DPPFu-BT)
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thin films after thermal annealing at 200℃. Schematic illustrations for stacking
orientations of (d) P(DPPFu-T), (e) P(DPPFu-TT) and (f) P(DPPFu-BT).
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mode; while the thin films of P (DPPFu-TT) and P(DPPFu-BT) primarily showed an
edge-on packing mode. All the thin films exhibited multiple diffraction orders. Based
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on Figures 3 and 4, P(DPPFu-T) displayed anisotropic diffraction along the in-plane
direction up to the (300) diffraction peak; P(DPPFu-TT) displayed anisotropic
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diffraction along the out-of-plane direction up to the (400) diffraction peak; and
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diffraction peak.
A pole figure analysis of the 2D GIXRD patterns was conducted to quantitatively
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investigate the stacking orientation influenced by the comonomer unit structure (Figure
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S7). Pole figures were extracted from the (100) lamellar diffraction peaks in 2D GIXRD
patterns, which were then integrated with polar angles of 0-45° and 135-180° (Axy)
representing face-on crystallites, and 45-135° (Az) representing edge-on crystallites,
respectively. The integrated area of Az and Axy for these thin films were presented in Table
S3.31, 32 The Az/Axy ratios were calculated as 34.4/65.6, 96.0/4.0 and 69.7/30.3 for the
as-prepared films of P(DPPFu-T), P(DPPFu-TT) and P(DPPFu-BT), respectively. After
thermal annealing at 200℃, these ratios changed to 25.3/74.7, 96.5/3.5 and 72.1/27.9.
These data implied that thermal annealing increased the packing orientation in all thin
films, enhancing the face-on content in P(DPPFu-T) and the edge-on content in
P(DPPFu-TT) and P(DPPFu-BT) thin films.33
It is worth noting that the structural changes of comonomers from P(DPPFu-T) to
P(DPPFu-TT) and P(DPPFu-BT) resulted in polymer semiconductors with distinct
backbone orientation.34 This variation in orientation is likely attributed to changes in
the surface energy of polymers and their interactions with the substrate.
d-spacing and π-π stacking distance could also be obtained from 1D GIXRD
patterns (Table S4). The d-spacing values ranged from 2.32 nm to 2.67 nm,
corresponding to diffraction peaks spanning from 3.3° to 3.8°. The d-spacing strongly
depended on the bisthiophene-fused DPP with branched alkyl chains, the fully extended
length of which was 3.68 nm, and the branched alkyl chains were interdigitated in the
thin films.
Among all the d-spacing values, the out-of-plane d-spacing in P(DPPFu-TT) was
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the shortest. This can be attributed to the fact that the horizontal length of
thienothiophene was longer than that of thiophene and benzothiadiazole, resulting in
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reduced spatial hindrance and a higher degree of interdigitation.
d-spacing was also related to the packing direction, which was very obvious for
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P(DPPFu-BT) thin films. In this case, the in-plane d-spacing was larger than the out-
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of-plane d-spacing. The π-π stacking distance for all the polymer semiconductors was
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between 0.34 nm and 0.35 nm, which was comparable with that for high-performance
polymer semiconductors based on DPP.4, 6, 35
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As face-on was the dominant packing mode in P(DPPFu-T) thin film, (100)
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diffraction was mainly along the in-plane direction and crystal size was extracted along
out-of-plane direction; edge-on packing mode was dominant in P(DPPFu-TT) and
P(DPPFu-BT) thin films, (100) was mainly along the out-of-plane direction and crystal
size was extracted along the in-plane direction. Crystalline domain sizes in the
semiconductor films were evaluated using Scherrer equation. Crystalline domain sizes
of all the polymer semiconductors in the as-spun films were only a few nanometers.
Among them, the crystalline domain size of P(DPPFu-TT) was the largest. This could
be attributed to the longer horizontal length of thienothiophene, which reduced steric
hindrance and facilitated better packing of segments. After thermal annealing, the
crystalline domain sizes of all the polymer semiconductors increased to about a dozen
nanometers, which indicated improved microstructural ordering. Therefore, thermal
annealing resulted in improved carrier transport properties of OTFTs.
2.6 Organic field-effect transistors
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Figure 5 Output and transfer curves of OFETs based on P(DPPFu-T) (a, b),
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The parameters were extracted from the devices with performance of medium level among at least 5 devices
Charge transport properties of these polymer semiconductors were evaluated using
bottom-gate/bottom-contact (BGBC) OFETs. All the OFETs exhibited ambipolar
charge transport property in the N2 atmosphere. The charge mobility (μh and μe), on/off
current ratio (Ion/Ioff) and threshold voltage (VT) were measured and compared for
OTFTs based on both as-prepared films and thermally annealed films (Table 2).
OTFTs based on as-prepared films exhibited hole-dominated charge transport
property, with the hole mobility being approximately 3-10 times higher than the
electron mobility. After thermal annealing at 200℃, the electron transport properties of
all the polymer semiconductors were significantly improved. As a result, all the OFETs
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exhibited clear ambipolar charge transport characteristics (Figure 5).
Au was utilized as source and drain electrodes, the Fermi level of which was well-
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matched with the HOMO level of polymer semiconductors. However, there was a
significant energy difference between LUMO level of these polymer semiconductors
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and the Fermi level of Au. Thermal annealing made the contact between
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semiconductors and electrodes more compact, which facilitated the tunneling injection
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Conclusion
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A series of polymer semiconductors, namely P(DPPFu-T), P(DPPFu-TT) and
P(DPPFu-BT), were successfully synthesized. These polymer semiconductors
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displayed remarkable thermal stability, broad absorption in the UV-Vis-NIR range, and
exhibited ambipolar charge transport properties.
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Among the three polymer semiconductors, P(DPPFu-TT) exhibited the highest
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Mn, reaching 56.0 kg/mol. The HOMO and LUMO were the most delocalized in the
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of P(DPPFu-TT) were superior to the other two polymer semiconductors, owing to its
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high molecular weight, delocalized frontier orbitals and the organized arrangement of
polymer chains. The hole and electron mobilities of P(DPPFu-TT) were 9.8×10-2 and
7.5×10-2 cm2V–1s–1, respectively.
In contrast, the Mn value of P(DPPFu-BT) was the lowest. Unlike DPPFu-T_×2
and DPPFu-TT_×2, the LUMO level in DPPFu-BT_×2 was more localized than the
HOMO level. Thin films of P(DPPFu-BT) predominantly exhibited an edge-on
packing mode, with an edge-on/face-on ratio of 72.1/27.9. P(DPPFu-BT)
demonstrated ideally balanced charge transport properties, with hole and electron
mobilities measured at 1.6×10-2 cm2V–1s–1 and 1.7×10-2 cm2V–1s–1, respectively.
Distinctly, thin film of P(DPPFu-T) mainly adopted a face-on packing mode,
with an edge-on/face-on ratio of 25.3/74.7, differing from P(DPPFu-TT) and
P(DPPFu-BT) thin films. P(DPPFu-T) displayed electron-dominated charge transport
properties, with the electron mobility approximately two times higher than hole
mobility. This suggests that the face-on packing mode potentially favors electron
transport.
Acknowledgements
This work was supported by Beijing Municipal Science and Technology Project
(KM201910017003), the Project of Cultivation for young top-notch Talents of Beijing
Municipal Institutions (BPHR202203093), Young Elite Scientists Sponsorship
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Program by BAST (BYESS2023089) and Beijing Natural Science Foundation
(2174074) and URT (2019J00031 and 2023J00074) program.
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The GIXRD data were obtained at BSRF-1W1A. The authors gratefully
acknowledge the cooperation of the beamline scientists at BSRF-1W1A beamline.
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Reference
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1. Wang, H.; Wang, Y.; Ni, Z.; Turetta, N.; Gali, S. M.; Peng, H.; Yao, Y.; Chen, Y.; Janica, I.; Beljonne,
D.; Hu, W.; Ciesielski, A.; Samorì, P., 2D MXene–molecular hybrid additive for high‐performance
ur
ambipolar polymer field‐effect transistors and logic gates. Advanced Materials 2021, 33, 2008215.
Jo
2. Zhang, Y. H.; Wang, Y. S.; Gao, C.; Ni, Z. J.; Zhang, X. T.; Hu, W. P.; Dong, H. L., Recent advances
in n-type and ambipolar organic semiconductors and their multi-functional applications. Chemical
Society Reviews 2023, 52, 1331-1381.
3. Gamez-Valenzuela, S.; Comi, M.; Gonzalez, S. R.; Delgado, M. C. R.; Al-Hashimi, M.; Ortiz, R.
P., The fluorination effect: the importance of backbone planarity in achieving high performance
ambipolar field effect transistors. Journal of Materials Chemistry C 2023, 11, 8027-8036.
4. Liu, Q.; Bottle, S. E.; Sonar, P., Developments of diketopyrrolopyrrole‐dye‐based organic
semiconductors for a wide range of applications in electronics. Advanced Materials 2020, 32,
1903882.
5. Park, K. H.; Go, J.-Y.; Lim, B.; Noh, Y.-Y., Recent progress in lactam-based polymer
semiconductors for organic electronic devices. Journal of Polymer Science 2021, 60, 429-485.
6. Zhou, Y.; Zhang, W.; Yu, G., Recent structural evolution of lactam- and imide-functionalized
polymers applied in organic field-effect transistors and organic solar cells. Chemical Science 2021,
12, 6844-6878.
7. Shen, T.; Li, W. H.; Zhao, Y.; Liu, Y. Q.; Wang, Y., An all-C-H-activation strategy to rapidly
synthesize high-mobility well-balanced ambipolar semiconducting polymers. Matter 2022, 5,
1953-1968.
8. Wang, Z. L.; Shi, Y. B.; Deng, Y. F.; Han, Y.; Geng, Y. H., Toward high mobility green solvent-
processable conjugated polymers: A systematic study on chalcogen effect in
poly(diketopyrrolopyrrole-alt-terchalcogenophene)s. Advanced Functional Materials 2021, 31,
2104881.
9. Ashraf, R. S.; Meager, I.; Nikolka, M.; Kirkus, M.; Planells, M.; Schroeder, B. C.; Holliday, S.;
Hurhangee, M.; Nielsen, C. B.; Sirringhaus, H.; McCulloch, I., Chalcogenophene comonomer
comparison in small band gap diketopyrrolopyrrole-based conjugated polymers for high-
performing field-effect transistors and organic solar cells. Journal of the American Chemical
Society 2015, 137, 1314-1321.
10. Alonso-Navarro, M. J.; Harbuzaru, A.; de Echegaray, P.; Arrechea-Marcos, I.; Harillo-Banos,
A.; de la Pena, A.; Ramos, M. M.; Lopez Navarrete, J. T.; Campoy-Quiles, M.; Ponce Ortiz, R.; Segura,
J. L., Effective interplay of donor and acceptor groups for tuning optoelectronic properties in
oligothiophene-naphthalimide assemblies. Journal of Materials Chemistry C 2020, 8, 15277-15289.
f
11. Zoombelt, A. P.; Mathijssen, S. G. J.; Turbiez, M. G. R.; Wienk, M. M.; Janssen, R. A. J., Small
oo
band gap polymers based on diketopyrrolopyrrole. Journal of Materials Chemistry 2010, 20, 2240-
2246.
r
12. Lee, J. S.; Son, S. K.; Song, S.; Kim, H.; Lee, D. R.; Kim, K.; Ko, M. J.; Choi, D. H.; Kim, B.; Cho, J.
-p
H., Importance of solubilizing group and backbone planarity in low band gap polymers for high
performance ambipolar field-effect transistors. Chemistry of Materials 2012, 24, 1316-1323.
re
13. Bijleveld, J. C.; Zoombelt, A. P.; Mathijssen, S. G. J.; Wienk, M. M.; Turbiez, M.; de Leeuw, D. M.;
lP
14. Li, Y. N.; Sonar, P.; Singh, S. P.; Soh, M. S.; van Meurs, M.; Tan, J., Annealing-free high-mobility
diketopyrrolopyrrole-quaterthiophene copolymer for solution-processed organic thin film
transistors. Journal of the American Chemical Society 2011, 133, 2198-2204.
ur
15. Yi, Z. R.; Sun, X. N.; Zhao, Y.; Guo, Y. L.; Chen, X. G.; Qin, J. G.; Yu, G.; Liu, Y. Q.,
Jo
f
24. Chen, B.; Yang, Y.; Cheng, P.; Chen, X. G.; Zhan, X. W.; Qin, J. G., Designing a thiophene-fused
oo
DPP unit to build an A-D-A molecule for solution-processed solar cells. Journal of Materials
Chemistry A 2015, 3, 6894-6900.
r
25. Skonieczny, K.; Papadopoulos, I.; Thiel, D.; Gutkowski, K.; Haines, P.; McCosker, P. M.; Laurent,
-p
A. D.; Keller, P. A.; Clark, T.; Jacquemin, D.; Guldi, D. M.; Gryko, D. T., How to make nitroaromatic
compounds glow: Next-generation large X-shaped, centrosymmetric diketopyrrolopyrroles.
re
Angewandte Chemie-International Edition 2020, 59, 16104-16113.
26. Ma, L.; Chen, B.; Guo, Y.; Liang, Y.; Zeng, D.; Zhan, X.; Liu, Y.; Chen, X., NIR polymers and
lP
29. Ma, L. C.; Li, Z. G.; Chen, B.; Xue, P. Y.; Wang, Z. M.; Wu, Y. B.; Zhan, X. W.; Liu, Y. Q.; Chen, X.
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P(DPPFu-T), P(DPPFu-TT) and P(DPPFu-BT) were designed and successfully
synthesized by copolymerizing DPPFu with thiophene, thienothiophene and
benzothiadiazole, respectively.
All the polymer semiconductors exhibited prominent ambipolar charge transport
property. P(DPPFu-TT) displayed the best charge transport property with hole mobility
up to about 0.1 cm2V–1s–1 and electron mobility of 7.5×10-2 cm2V–1s–1.
Relationships between comonomer structure, frontier orbital energy level, orbital
delocalization index, molecular packing, film morphology and the corresponding
charge transport properties were investigated systematically.
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Declaration of interests
☒ The authors declare that they have no known competing financial interests or personal relationships
that could have appeared to influence the work reported in this paper.
☐ The authors declare the following financial interests/personal relationships which may be considered
as potential competing interests:
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