IGBT MODULE ( N series ) n Outline Drawing

n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (~3 Times Rated Current)

n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply

n Maximum Ratings and Characteristics n Equivalent Circuit

• Absolute Maximum Ratings ( Tc=25°C)
Items Symbols Ratings Units
Collector-Emitter Voltage VCES 600 V
Gate -Emitter Voltage VGES ± 20 V
Continuous IC 300
Collector 1ms IC PULSE 600
A
Current Continuous -IC 300
1ms -IC PULSE 600
Max. Power Dissipation PC 1100 W
Operating Temperature Tj +150 °C
Storage Temperature Tstg -40 ∼ +125 °C
Isolation Voltage A.C. 1min. Vis 2500 V
Mounting *1 3.5
Screw Torque Nm
Terminals *1 3.5
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)

• Electrical Characteristics ( at Tj=25°C )

Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current ICES VGE=0V VCE=600V 2.0 mA
Gate-Emitter Leackage Current IGES VCE=0V VGE=± 20V 30 µA
Gate-Emitter Threshold Voltage VGE(th) VGE=20V IC=300mA 4.5 7.5 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V IC=300A 2.8 V
Input capacitance Cies VGE=0V 19800
Output capacitance Coes VCE=10V 4400 pF
Reverse Transfer capacitance Cres f=1MHz 2000
tON VCC=300V 0.6 1.2
Turn-on Time
tr IC=300A 0.2 0.6
µs
tOFF VGE=± 15V 0.6 1.0
Turn-off Time
tf RG=6.8Ω 0.2 0.35
Diode Forward On-Voltage VF IF=300A VGE=0V 3.0 V
Reverse Recovery Time trr IF=300A 300 ns

• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
Rth(j-c) IGBT 0.11
Thermal Resistance Rth(j-c) Diode 0.24 °C/W
Rth(c-f) With Thermal Compound 0.025
 Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
T j=25°C T j=125°C

700 700
V GE =20V,15V,12V V GE=20V,15V,12V,
600 600
[A]

500 500
C

[A]
10V 10V
Collector current : I

400 400

C
Collector current : I
300 300

200 200

100 100 8V
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter voltage : V CE [V] Collector-Emitter voltage : V CE [V]

Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage

T j=25°C T j=125°C

10 10
[V]

[V]
CE

CE

8 8
Collector-Emitter voltage :V

Collector-Emitter voltage V

6 6

IC= IC=
4 4
600A
600A
300A 300A
2 2
150A 150A

0 0
0 5 10 15 20 25 0 5 10 15 20 25

Gate-Emitter voltage : V GE [V] Gate-Emitter voltage : V GE [V]

Switching time vs. Collector current Switching time vs. Collector current
V CC =300V, R G =6.8 Ω , V GE =±15V, T j=25°C V CC =300V, R G =6.8 Ω , V GE =±15V, Tj=125°C

1000 1000 t OFF

ton
[nsec]

[nsec]

t ON
toff
tr
ON, t r, t OFF , t f

ON, t r, t OFF , t f

tr tf

tf

100 100
Switching time : t

Switching time : t

10 10
0 100 200 300 400 500 0 100 200 300 400 500
Collector current : I C [A] Collector current : I C [A]
 Switching time vs. R G Dynamic input characteristics
V CC =300V, I C =300A, V GE =±15V, T j=25°C T j=25°C
500
25

t ON V CC =200V

[V]
[nsec]

1000 300V
t OFF 400 20

CE
400V
ON, t r, t OFF , t f

Collector-Emitter voltage : V
tr 300
15
tf
Switching time : t

100 200
10

100
5

10 0
0 500 1000 1500 0
1 10
Gate charge : Q G [nC]
Gate resistance : R G [ Ω ]

Forward current vs. Forward voltage Reverse recovery characteristics

V GE = O V t rr, I rr vs. I F

500
700
T j=125°C 25°C
[nsec]

I rr
600
[A]

125°C
rr

rr
[A]

500 t rr
F

Reverse recovery current : I

:t

125°C
Forward current : I

400 I rr
Reverse recovery time

100
25°C
300
t rr
200 25°C

100

0
0 1 2 3 4 0 100 200 300 400 500

Forward voltage : V F [V] Forward current : I F [A]

Reversed biased safe operating area

Transient thermal resistance +V GE =15V, -V GE <15V, T j<125°C, R G >6.8 Ω
3000

Diode
[°C/W]

2500
[A]
th(j-c)

0,1 2000
IGBT SCSOA
Collector current : I
Thermal resistance : R

(non-repetitive pulse)
1500

1000

0,01 500
RBSOA (Repetitive pulse)

0
0,001 0,01 0,1 1 0 100 200 300 400 500 600

Pulse width : PW [sec] Collector-Emitter voltage : V CE [V]

 Switching loss vs. Collector current Capacitance vs. Collector-Emitter voltage
V CC =300V, R G =6.8 Ω , V GE =±15V T j=25°C
30 100
E OFF 125°C
[mJ/cycle]

25

C oes , C res [nF]

E OFF 25°C
E OFF , E rr

20 C ies
10
E ON 125°C

ies ,
15
ON,

Capacitance : C
E ON 25°C
Switching loss : E

10 C oes

C res
5 1
E rr 125°C

E rr 25°C
0
0 100 200 300 400 500 0 5 10 15 20 25 30 35

Collector Current : I C [A] Collector-Emitter Voltage : V CE [V]

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - (972) 733-1700 - www.fujisemiconductor.com

Fuji Electric GmbH Fuji Electric (UK) Ltd.

Lyoner Straße 26 Commonwealth House
2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0 Tel.: 0181 - 233 11 30
Fax.: 069 - 66 90 29 - 56 Fax.: 0181 - 233 11 60

Specification is subject to change without notice May 97