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Electronics - I
(108134)
Lecture-18
Field Effect Transistors (FETs)

11/01/2020 Engr Sardar Ahmad 2

 Class Learning Objectives
 Introduction
 Trans-conductance
 JFET input resistance
 JFET Biasing
 Determining Q point
 JFET as variable resistor
 Summary
Recap : Field Effect Transistors (FETs)
JFET SYMBOLS
Recap : Field Effect Transistors (FETs)

Transconductance curve
Field Effect Transistors (FETs)
 Field Effect Transistors (FETs)

Input Capacitance
Field Effect Transistors (FETs)
 Field Effect Transistors (FETs)
JFET Biasing

 Purpose of biasing is to select proper DC Gate-to-Source

Voltage to establish desired value of drain current and proper
Q-point
 Three types of biasing :
 Self-bias
 Voltage-divider bias
 Current-source bias
Field Effect Transistors (FETs)
 Field Effect Transistors (FETs)
N Channel Self Bias

P Channel Self Bias

Field Effect Transistors (FETs)
Field Effect Transistors (FETs)
Field Effect Transistors (FETs)
 Field Effect Transistors (FETs)

The slope of the characteristic curve

Field Effect Transistors (FETs)
 Field Effect Transistors (FETs)
JFET Transconductance
 Slope changes at every point along the curve
 Trans-Conductance not constant & depends on where it is
measured.
I D (mA)
Example:
10 mA

What is the transconductance for 8.0

the JFET at the point shown? 6.0 5.7
Solution: 4.0 3.7
2.0
I D 5.7 mA - 3.7 mA
gm   –VGS
VGS - 0.7 V - (- 1.3 V) -4 -3 -2 -1 0
2.0 mA -1.3 -0.7
  3.33 mS
0.6 V
 Field Effect Transistors (FETs)
Example : JFET Biasing
 Self-bias is simple & effective
 Most common biasing method for JFETs
 With self bias, gate essentially at 0 V +VDD = +12 V

Example: RD
1.5 kW
Assume the resistors as shown and drain
VG = 0 V
current 3.0 mA. What is VGS?
Solution: RG
+
RS
IS
330 W
1.0 MW –
VG = 0 V; VS = (3.0 mA)(330 W) = 0.99 V
VGS = 0 – 0.99 V = - 0.99 V
 Selected Key Terms

JFET Junction field-effect transistor; one of two

major types of field-effect transistors.

Drain One of three terminals of a FET analogous to

the collector of a BJT.

Source One of three terminals of a FET analogous to

the emitter of a BJT.

Gate One of three terminals of a FET analogous to

the base of a BJT.

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Thanks