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TLP131

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP131
Unit in mm
Office Machine
Programmable Controllers
AC / DC−Input Module
Telecommunication

The TOSHIBA mini flat coupler TLP131 is a small outline coupler,


suitable for surface mount assembly.
TLP131 consists of a photo transistor, optically coupled to a gallium
arsenide infrared emitting diode.

· Collector−emitter voltage: 80V (min.)


· Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
· Isolation voltage: 3750Vrms (min.)
· UL recognized: UL1577, file No. E67349
TLP131 base terminal is for the improvement of speed, reduction of dark
current, and enable operation. TOSHIBA 11−4C2

Weight: 0.09 g

Pin Configurations (top view)

1 6

3 4

1 : Anode
3 : Cathode
4 : Emitter
5 : Collector
6 : Base

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TLP131
Current Transfer Ratio
Current Transfer
Ratio (%)
Type Classification (IC / IF) Marking Of Classification
IF = 5mA, VCE = 5V, Ta = 25°C
Min. Max.
(None) 50 600 BLANK, Y, Y■, G, G■, B, B■, GB
Rank Y 50 150 Y, Y■
TLP131
Rank GR 100 300 G, G■
Rank GB 100 600 G, G■, B, B■, GB

Note: Application type name for certiffication test,please use standard product type name,i.e.
TLP131(GB): TLP131
Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Forward current IF 50 mA
Forward current derating (Ta≥53°C) ∆IF / °C -0.7 mA / °C
LED

Peak forward current (100µs pulse,100pps) IFP 1 A


Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 80 V
Collector-base voltage VCBO 80 V
Emitter-collector voltage VECO 7 V
Emitter-base voltage VEBO 7 V
Detector

Collector current IC 50 mA
Peak collector current (10ms pulse,100pps) ICP 100 mA
Power dissipation PC 150 mW
Power dissipation derationg (Ta ≥ 25°C) ∆PC / °C -1.5 mW / °C
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Operating temperature range Topr -55~100 °C
Lead soldering temperature (10s) Tsol 260 °C
Total package power dissipation PT 200 mW
Total package power dissipation derating (Ta ≥ 25°C) ∆PT / °C -2.0 mW / °C
Isolation voltage (AC, 1min., RH≤ 60%) (Note 1) BVS 3750 Vrms

(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted
together.

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TLP131
Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VCC ― 5 48 V


Forward current IF ― 16 25 mA
Collector current IC ― 1 10 mA
Operating temperature Topr -25 ― 85 °C

Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V


LED

Reverse current IR VR = 5 V ― ― 10 µA
Capacitance CT V = 0, f = 1 MHz ― 30 ― pF
Collector-emitter
V(BR)CEO IC = 0.5mA 80 ― ― V
breakdown voltage
Emitter-collector
V(BR)ECO IE = 0.1mA 7 ― ― V
breakdown voltage
Collector-base breakdown voltage V(BR)CBO IC = 0.1mA 80 ― ― V
Emitter-base breakdown voltage V(BR)EBO IE = 0.1mA 7 ― ― V
Detector

VCE = 48V ― 10 100 nA


collector dark current ICEO
VCE = 48V,Ta = 85°C ― 2 50 µA

VCE = 48V,Ta = 85°C


Collector dark current ICER ― 0.5 10 µA
RBE = 1MΩ

Collector dark current ICBO VCB = 10V ― 0.1 ― nA

DC forward current gain hFE VCE = 5V,IC = 0.5mA ― 400 ― ―

Capacitance (collector to emitter) CCE V = 0, f = 1MHz ― 10 ― pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

IF = 5 mA, VCE = 5 V 50 ― 600


Current transfer ratio IC / IF %
Rank GB
100 ― 600

IF = 1 mA, VCE = 0.4 V ― 60 ―


Saturated CTR IC / IF (sat) %
Rank GB 30 ― ―
Base photo-current IPB IF = 5mA,VCB = 5V ― 10 ― µA
IC = 2.4 mA, IF = 8 mA ― ― 0.4
Collector-emitter
VCE (sat) IC = 0.2 mA, IF = 1 mA ― 0.2 ― V
saturation voltage
Rank GB ― ― 0.4
Off-state collector current IC (off) IF = 0.7mA, VCE = 48 V ― 1 10 µA

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TLP131
Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Capacitance (input to output) CS VS = 0, f = 1 MHz ― 0.8 ― pF


10 14
Isolation resistance RS VS = 500 V 5×10 10 ― Ω
AC, 1 minute 3750 ― ―
Vrms
Isolation voltage BVS AC, 1 second, in oil ― 10000 ―
DC, 1 minute, in oil ― 10000 ― Vdc

Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Rise time tr ― 2 ―
Fall time tf VCC = 10 V, IC = 2 mA ― 3 ―
µs
RL = 100Ω
Turn-on time ton ― 3 ―
Turn-off time toff ― 3 ―
Turn-on time tON ― 2 ―
RL = 1.9 kΩ%) (Fig.1)
Storage time ts RBE = OPEN ― 25 ― µs
VCC = 5 V, IF = 16 mA
Turn-off time tOFF ― 40 ―
Turn-on time tON ― 2 ―
RL = 1.9 kΩ%) (Fig.1)
Storage time ts RBE = 220 kΩ ― 20 ― µs
VCC = 5 V, IF = 16 mA
Turn-off time tOFF ― 30 ―

Fig. 1 Switching time test circuit

IF
IF VCC
RL tS
VCC
VCE VCE 4.5V
RBE 0.5V

tON tOFF

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TLP131

IF – Ta PC – Ta
100 200

Allowable collector power


Allowable forward current

dissipation PC (mW)
80 160

120
IF (mA)

60

40 80

20 40

0 0
-20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

IFP – DR IF – VF
3000 100
Pulse width ≦ 100ms Ta = 25°C
Ta = 25°C 50
1000 30
IF (mA)
Pulse forward current

500
10
IFP (mA)

300
5
Forward current

100 3

50
30 1

0.5
10 0.3
-3 -2 -1 0
3 10 3 10 3 10 3 10

Duty cycle ratio DR 0.1


0.6 0.8 1.0 1.2 1.4 1.6 1.8

Forward voltage VF (V)

DVF / DTa – IF IFP – VFP


Forward voltage temperature coefficient

-3.2 1000

500
(mA)

-2.8
300
DVF / DTa (mV / °C)

-2.4
IFP

100
Pulse forward current

-2.0 50
30
-1.6

10
-1.2
Pulse width ≦ 10ms
5
Repetitive
-0.8 3
Frequency = 100Hz
Ta = 25°C
-0.4 1
0.1 0.3 0.5 1 3 5 10 30 50 1.0 1.4 1.8 2.2 2.6 3.0

Forward current IF (mA) Pulse forward voltage VFP (V)

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TLP131

IC – VCE IC – VCE
50 30
Ta = 25°C Ta = 25°C

50mA IF = 50mA

IC (mA)
(mA)

40
30mA 40mA
20mA 30mA
15mA 20
Collector current IC

30 20mA

Collector current
10mA
10mA
PC(MAX.)
20
IF = 5mA 10 5mA

10
2mA

0 0
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0

Collector–emitter voltage VCE (V) Collector–emitter voltage VCE (V)

IC – IF IC / IF – IF
100 1000
Ta = 25°C VCE = 10V Ta = 25°C
(%)

50 VCE = 5V
Collector current IC (mA)

30 500 VCE = 0.4V


Current transfer ratio IC / IF

10 300
SAMPLE A
SAMPLE A
5
3
SAMPLE B

1 100
VCE = 10V
SAMPLE B
0.5 VCE = 5V
0.3 VCE = 0.4V 50

0.1
0.3 0.5 1 3 5 10 30 50 100 0.3 0.5 1 3 5 10 30 50 100

Forward current IF (mA) Forward current IF (mA)

IC – IF at RBE IPB – IF
100 300
Ta = 25°C Ta = 25°C
50 VCE = 5V
(ms)

100 IF VCB
(mA)

30
IPB

30
10 VCB = 0V
Collector current IC

VCB = 5V
A
Base photo current

5 10
3
VCC
3
IF
1 A
1
0.5 50kW
0.3
RBE

RBE = ∞ 500kW 100kW 0.3

0.1 0.1
0.1 0.3 0.5 1 3 5 10 30 50 100 0.1 0.3 0.5 1 3 5 10 30 50 100

Forward current IF (mA) Forward current IF (mA)

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TLP131

ICEO – Ta VCE(sat) – Ta
101 0.24
IF = 5mA
Ic = 1mA
0.20

Collector–emitter saturation
voltage VCE(sat) (V)
0
10
0.16
Collector dark current ICEO (µA)

VCE = 48V 24V 0.12

10V
10-1
5V 0.08

0.04

10-2
0
-40 -20 0 20 40 60 80 100

Ambient temperature Ta (℃)


10-3

10-4
0 20 40 60 80 100 120

Ambient temperature Ta (℃)

IC – Ta Switching Time – RL
100
VCE = 5V Ta = 25℃
300 IF = 16mA
50 IF = 25mA VCC = 5V
RBE = 220kΩ
30
10mA
100

5mA
(mA)

10
50 tOFF
(ms)
IC

5 30 ts
Switching time
Collector current

1mA 10

5
0.5
0.5mA
3
0.3 tON

0.1 1
-20 0 20 40 60 80 100 1 3 5 10 30 50 100

Load resistance RL (k9)


Ambient temperature Ta (℃)

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TLP131

Switching Time – RBE Switching Time – RL


1000 1000
Ta = 25℃ Ta = 25°C
IF = 16mA
IF = 16mA
500 VCC = 5V
500 VCC = 5V
RL = 1.9kΩ

tOFF
300 300

100 100
(ms)

(ms)
tOFF
50 50 ts
Switching time

Switching time
30 ts 30

10 10

5 5

3 3
tON tON

1 1
100k 300k 1M 3M ∞ 1 3 5 10 30 50 100

Base-emitter resistance RBE (9) Load resistance RL (9)

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TLP131

RESTRICTIONS ON PRODUCT USE 000707EBC

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.

· The products described in this document are subject to the foreign exchange and foreign trade laws.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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