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TLP598GA
Telecommunication Unit: mm
Data Acquisition
Measurement Instrumentation
1: ANODE
2: CATHODE
3: N.C.
N.C.
4: DRAIN D1
5: SOURCE
6: DRAIN D2
Schematic
6
1
2 5
Forward current IF 30 mA
Forward current derating (Ta ≥ 25°C) ΔIF / °C -0.3 mA / °C
Peak forward current (100 μs pulse, 100 pps) IFP 1 A
LED
Reverse voltage VR 5 V
Diode power dissipation PD 50 mW
Diode power dissipation derating (Ta >25°C) △PD /°C -0.5 mW/°C
Junction temperature Tj 125 °C
Off-state output terminal voltage VOFF 400 V
A connection 150
On-state RMS current B connection ION 200 mA
C connection 300
A connection -1.5
On-state current derating (Ta ≥ 25°C) B connection ΔION / °C -2.0 mA / °C
C connection -3.0
Detector
A connection 270
Output power dissipation B connection PO 240 mW
C connection 270
A connection -2.7
Output power dissipation derating (Ta ≥ 25°C) B connection ΔPO / °C -2.4 mW / °C
C connection -2.7
Junction temperature Tj 125 °C
Storage temperature range Tstg -55 to 125 °C
Operating temperature range Topr -40 to 85 °C
Lead soldering temperature (10 s) Tsol 260 °C
Isolation voltage (AC, 60 s, R.H. ≤ 60%) (Note 1) BVS 2500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two-terminal device: Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted
together.
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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Circuit Connections
AC
2 5 or DC 2 5 DC 2 5 DC
3 4 3 4 3 4
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Electrical Characteristics (Ta = 25°C)
Reverse current IR VR = 5 V — — 10 μA
Capacitance CT V = 0 V, f = 1 MHz — 30 — pF
VDD IF
IF
1 6 RL
VOUT 90%
2 10%
4 VOUT
tON tOFF
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I F – Ta P C – Ta
100
280 A, C connection
240
200
60
IF (mA)
PC (mW)
160
40
120
20 80
40
0
-20 0 20 40 60 80 100
0
Ambient temperature Ta (°C) -20 0 20 40 60 80 100 120
I F – VF ION (RMS) – Ta
100 350
50 Ta = 25°C
C connection
On-state current ION (RMS) (mA)
300
30
IF (mA)
250
10
B connection
5 200
Forward current
3 A connection
150
1
100
0.5
0.3 50
0.1 0
-20 0 20 40 60 80 100 120
0.6 0.8 1.0 1.2 1.4 1.6 1.8
IFP – DR
5000
Pulse width≤100μs
3000
Ta = 25°C
(mA)
1000
IFP
500
300
Pulse forward current
100
50
30
10
10-3 10-2 10-1 100
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