IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 54, NO.
5, OCTOBER 2018
752-MHz Modulation Bandwidth of High-Speed
Blue Micro Light-Emitting Diodes
Hao-Yu Lan, I-Chen Tseng, Hsuan-Yun Kao, Yung-Hsiang Lin, Gong-Ru Lin , Senior Member, IEEE,
and Chao-Hsin Wu , Member, IEEE
Abstract— In this paper, the optical frequency response of
gallium nitride-based blue micro-LEDs with different quantum
well numbers in the active region is presented. Single quantum
well (SQW) blue micro-LEDs have about 1.6 times higher mod-
ulation bandwidth ( f−3 dB ) by comparison with triple quantum
well blue micro-LEDs. The larger bandwidth enhancement of
the SQW micro-LEDs can be attributed to more carriers stored
in a quantum well leading to higher recombination rate and
lower recombination lifetime. The high f−3 dB up to 752 MHz
is demonstrated in the SQW micro-LED with a light-emitting
area of 10 µm × 10 µm. It suggests that micro-LEDs designed
with fewer quantum well numbers may have the potential for
the application of visible light communication (VLC) technology.
Index Terms— Light-emitting diodes, quantum well devices,
visible light communication, high speed electronics, spontaneous
emission.
I. I NTRODUCTION
T HE invention of gallium nitride (GaN)-based blue LEDs
won the 2014 Nobel Prize in Physics due to white
light synthesis and high efficiency. Solid-state lighting (SSL)
based on blue LEDs is one of the most rapidly developing
green technologies and has been already commercialized in
the market [1], [2]. As Internet of Things (IoT) and big
data technology quickly develop, mobile phones and wearable
devices such as the smart watch will be equipped with Wi-Fi
and Bluetooth interfaces. The exponentially growing demand
for data transmission causes data traffic. Thus, there will be
a shortage of available radio frequency (RF) communication
spectrum in the near future. A potential solution to the spec-
trum crisis is to extend current wireless communication spec-
trum to visible light region [3]–[6]. VLC have advantages such
as license-free spectrum range, high security, and immunity to
Manuscript received May 24, 2018; revised July 25, 2018; accepted
August 16, 2018. Date of publication August 24, 2018; date of current version
September 24, 2018. This work was supported by the Ministry of Science and
Technology (MOST) of Taiwan under Grants MOST 105-2628-E-002-007-
MY3, MOST 106-2923-E-002-006-MY3, MOST 104-2622-E-002-024-CC3,
MOST 104-2622-E-002-032-CC2, and MOST 106-2622-E-002-023-CC2.
(Corresponding author: Chao-Hsin Wu.)
H.-Y. Lan, I.-C. Tseng, and H.-Y. Kao are with the Graduate Institute of
Photonics and Optoelectronics, National Taiwan University, Taipei 106-17,
Taiwan.
Y.-H. Lin is with the Research and Development Center, Epistar Corpora-
tion, Hsinchu 300, Taiwan.
G.-R. Lin and C.-H. Wu are with the Department of Electrical Engineering,
Graduate Institute of Photonics and Optoelectronics, National Taiwan Univer-
sity, Taipei 106-17, Taiwan (e-mail: chaohsinwu@ntu.edu.tw).
Color versions of one or more of the figures in this paper are available
online at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/JQE.2018.2867087
0018-9197 © 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.
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3300106
electromagnetic interference (EMI) [3]–[6]. Given that the dra-
matic growth in the use of LEDs as lighting sources, this trend
can create the opportunity to incorporate VLC technology into
SSL systems in our daily life. Most important of all, the energy
used for lighting can also be used for VLC, achieving energy-
efficient technology. However, there are still some challenges
blocking the development of commercial VLC systems, such
as the upload link, the extra cost for high-speed circuits, and
the insufficient modulation speeds of traditional LEDs [7].
The modulation bandwidth of commercial LEDs is limited to
the range of 10-20 MHz owing to a large RC delay and a long
carrier recombination lifetime (∼ns). Although GaN-based
laser diode has been demonstrated a modulation bandwidth
exceeding GHz and a data rate of ∼2 Gbps for white light
communication [8], [9], there are some problems such as
limited etendue, speckle noise, and eye-safety issue to be
solved in laser-based light sources [10], [11]. Many groups
that have been tried to improve the modulation bandwidth
from epitaxial or geometrical efforts [12]–[15]. The common
approach in these reported LEDs is to reduce the area of LEDs,
i.e., micro-LEDs, leading to higher current density operation
and also lower junction temperature operation [16]. Practically,
although the modulation bandwidth enhances in smaller-size
micro-LEDs, the optical power decreases. By operating micro-
LEDs in an array fashion, it is possible to solve optical power
issue. Flip-chip configurations are used for better thermal dis-
sipation to lower the current crowding effect but also increase
fabrication costs [12], [13]. By using semi/non-polar substrate,
quantum-confined Stark effect (QCSE) can be minimized to
enhance the recombination rate resulting in shorter carrier
lifetime [14]. Reduction of the barrier thickness in the active
region can improve carrier uniformity in the active region and
thus enhance the modulation bandwidth [15]. To summarize,
the most important feature to study for high speed performance
is the carrier recombination mechanism in the active region in
order to reduce carrier lifetime and decrease device size to
sustain higher current density operation.
However, different design parameters of the active region to
enable high frequency modulation of GaN-based micro-LEDs
such as quantum well numbers have not been discussed in
detail. In this work, the two GaN-based micro-LEDs (single-
quantum well, SQW and triple-quantum well, TQW) were
based on the same epitaxial structure except for the quantum
well numbers in the active region. The effects of quantum well
numbers on the modulation bandwidth and data transmission
3300106
rate of high-speed blue micro-LEDs are presented. Nearly
1.6 times bandwidth and 2 times data rate enhancement can be
achieved in SQW micro-LEDs in comparison to TQW micro-
LEDs. We successfully demonstrated 752 MHz modulation
bandwidth of SQW blue micro-LEDs with a light-emitting
area of 10 μm × 10 μm. Although a trade-off between light
power and bandwidth might be an issue, this study discusses
the relationship between QW number and modulation speed
in detail and suggests that micro-LEDs with fewer quantum
well numbers can deliver higher modulation bandwidth.
II. E XPERIMENT
The SQW and TQW LED epitaxial layers are implemented
on sapphire substrates. From bottom to top, the LED epitaxial
layers consist of a 4000 nm GaN buffer layer, a 2000 nm
heavily doped n-type GaN contact layer for ohmic contact,
and a 2600 nm n-type GaN cladding layer. The active region
includes a thicker 40 nm strain modulation layer and MQW
layers. The thickness of a well is 3 nm and the thickness
of a barrier is 12 nm respectively. The total thickness of the
SQW LEDs is 60 nm and that of the TQW LEDs is 90 nm
respectively. The LED epitaxial layers are completed with a
10 nm p-type electron blocking layer and a 560 nm p-type GaN
layer. The device fabrication process starts with Ni/Au trans-
parent contact layer (TCL) deposition followed by a chlorine-
based mesa etching in an inductively coupled plasma (ICP)
etching system using standard photolithography process. Ti/Au
metal stacks are patterned for the n-contact formation. All
contacts are annealed with RTA at 500◦C in air atmosphere.
A polyimide layer and a SiNx layer (∼200 nm) are deposited
for passivation and insulation. Reactive-ion etching (RIE) was
used for via hole formation. Ti/Au metal stacks are deposited
as the contact pad for ground-signal-ground (GSG) probing to
measure the high speed characteristics. Figure 1(a) shows the
device layout of high-speed micro-LEDs. The light-emitting
area is defined by the square shape with three different
lengths L (10, 30, and 50-μm). The right inset is the optical
microscope (OM) image of the device with the light-emitting
area of 50 μm × 50 μm at injected current of 0.5 mA.
The SQW micro-LEDs were named according to the value
of L as S10, S30, and S50, respectively. The TQW micro-
LEDs were also named T10, T30, and T50. The 3D schematic
device cross section is shown in Fig. 1(b).The variation on the
two high-speed micro-LEDs (SQW and TQW) is the quantum
well numbers in the active region.
The light-current voltage (L-I-V) measurement was carried
out using an Agilent E5270B DC power meter and plastic
optical fiber (POF). For the electroluminescence (EL) emission
spectrum measurement, a fiber is used to couple the photons
from device to the spectrometer, an Ocean Optics spectrometer
(Model: QE65000). The frequency response measurement was
carried out using an Agilent N5225A PNA network analyzer
(10 MHz to 50 GHz), a bias tee, and a New Focus 1601 FC-AC
high-speed photodetector (30 kHz to 1 GHz).
III. DC C HARACTERISTIC
The L-I and I-V curves of the two micro-LEDs (SQW
and TQW) with different light-emitting areas are shown
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IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 54, NO. 5, OCTOBER 2018
Fig. 1. (a) Schematic device layout of the two high-speed LEDs (SQW and
TQW). The light-emitting area is defined by the square shape with three
different lengths L (10, 30, and 50-μm). The right inset is the optical micro-
scope (OM) image of the device with the light-emitting area of 50 μm×50 μm
under injected current of 0.5 mA. (b) 3D schematic device cross section of
the two high-speed LEDs. The GSG contact pitch size is 100 μm. The LEDs
have InGaN/GaN single quantum well (SQW) or triple quantum well (TQW)
in active region.
in Fig. 2(a) and Fig. 2(b). It can be seen that, because of
more quantum well numbers in the active region, the optical
power of the TQW micro-LEDs (T10, T30, T50) is higher
than the SQW micro-LEDs (S10, S30, S50). On the other
hand, the I-V curves tend to shift to higher forward voltage
from SQW micro-LEDs to TQW micro-LEDs, which is due
to the increase of junction resistance induced by the increase
of quantum well numbers, i.e., more resistive layers in active
region. Although the TQW micro-LEDs exhibit higher light
output power, i.e., better optical performance, they also have
higher resistance and turn-on voltage, i.e., poor electrical
performance.
Figure 3(a) and 3(b) show the Electroluminescence (EL)
spectrum of the SQW and TQW micro-LED (S10, T10), which
is measured with current injected from 2 mA to 20 mA.
The peak wavelength is located around 430-440 nm in the
two micro-LEDs which is corresponding to the blue light
emission. A slight blue shift is observed with increasing
injection current in the two LEDs due to quantum-confined
Stark effect (QCSE), which is similar to those observed in
commercial GaN-based LEDs. The same peak wavelength can
prove that the quantum well material in the active region is
identical in the two LEDs, which represents that the only
difference in the active region is the quantum well numbers.
IV. M ICROWAVE C HARACTERISTICS
The frequency responses for the SQW and TQW micro-
LEDs with the light-emitting area of 10 μm × 10 μm
(S10, T10) operating at different injected current are shown
LAN et al.: 752-MHz MODULATION BANDWIDTH OF HIGH-SPEED BLUE MICRO LEDs
Fig. 2. (a) L-I curves and (b) I-V curves of the SQW and TQW micro-LEDs
with three different light-emitting areas (L = 10, 30, and 50 μm).
Fig. 3. (a) Electroluminescence (EL) spectra of the SQW micro-LED (S10),
and (b) EL of the TQW micro-LED (T10).
in Fig. 4(a) and (b). The optical modulation bandwidth (f−3dB )
in S10 is measured to be 381 MHz, 609 MHz, and 752 MHz
with injected current from 10 mA, 30 mA, and 50 mA,
respectively. The optical modulation bandwidth (f−3dB ) in
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3300106
Fig. 4. (a) Modulation response of the SQW micro-LED with the light-
emitting area of 10 μm × 10 μm (S10), and (b) Modulation response f the
TQW micro-LED with the light-emitting area of 10 μm × 10 μm (T10).
T10 is measured to be 204 MHz, 362 MHz, and 469 MHz with
the same bias currents. Surprisingly, S10 has nearly 1.6 times
higher modulation bandwidth than T10. Through constructing
the small-signal model, the junction resistance and the junction
capacitance of S10 with an injected current of 50 mA can be
extracted and is around 15.5 ohm and 701 fF, respectively.
Hence, it can be inferred that when the device is in the micro-
scale, the modulation bandwidth is not limited by RC but by
recombination lifetime.
The bandwidth at −3 dB, f−3dB , can be expressed as:
1
f−3d B = (1)
2πτrec
where τrec is effective recombination lifetime which can be
expressed as follows:
1
τrec = (2)
A + 2B N + 3C N 2
where N is carrier concentration in the active region, A is
the coefficient of the defect (SRH) recombination, and B is
the coefficient of spontaneous recombination, and C is the
coefficient of Auger recombination. According to Eq. (1),
the smallest carrier recombination lifetime (τrec ) of S10 is
expected to be ∼0.21 ns under injection current of 50 mA
which is smaller than ∼0.34 ns in T10. It may be inferred
that since SQW micro-LEDs have only one quantum well
to store carriers, this quantum well has more carriers (N)
within, leading to higher recombination rate and shorter carrier
3300106
Fig. 5. Modulation bandwidth versus current density relation for the
SQW micro-LEDs and the TQW micro-LEDs with different length (L=10,
30, 50 μm).
Fig. 6. Benchmark of the high-speed blue GaN-based micro-LEDs.
lifetime as seen in Eq. (2). Although SQW micro-LEDs may
sacrifice light output power, the speed can increase dramati-
cally (1.6 times).
The modulation bandwidth (f−3dB ) versus current density
relation of the two micro-LEDs (SQW, TQW) with three
different lengths (L=10, 30, 50 μm) is shown in Fig. 5. The
modulation bandwidth of the SQW and TQW micro-LEDs
has strong dependency on the current density. As the device
size decreases, the bias current density can be applied more
to achieve higher modulation bandwidth which is attributed
to lower junction temperature and less current crowding
effect in smaller size devices [16]. The modulation bandwidth
(f−3dB ) of three different size in SQW micro-LEDs is much
higher than that of the TQW micro-LEDs due to the smaller
carrier lifetime.
In comparison to other reported high-speed blue GaN-based
micro-LEDs [11]–[14], [16]–[21] shown in Fig. 6, the SQW
blue micro-LEDs of this work exhibit almost the same output
power (∼1 mW) but higher modulation bandwidth. The LEDs
designed with SQW (vs. TQW) facilitate more carriers and
higher recombination rate in a quantum well and thus higher
optical modulation bandwidth.
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IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 54, NO. 5, OCTOBER 2018
Fig. 7. The large signal on-off keying (OOK) modulation measurement
set-up.
V. DATA T RANSMISSION P ERFORMANCE : O N -O FF
K EYING (OOK)
To demonstrate the data transmission of the SQW and
TQW micro-LEDs, large signal on-off keying (OOK) mod-
ulation was performed by using a non-return-to-zero (NRZ)
27 − 1 pseudo-random bit sequence (PRBS7) with a peak-to-
peak voltage Vpp = 2 V from a pattern generator (Anritsu
MP1652A). The input signal amplified by a 20 dB ampli-
fier (AMP ZX60-Z63+) was superimposed on a 45 mA dc bias
and a bias tee. The optical signal was coupled by a 1 m plastic
fiber and connected to a high-speed 1 GHz photodetector (New
Focus 1601) with a 20 dB amplifier (AMP ZX60-Z63+).
The large signal on-off keying (OOK) modulation measure-
ment set-up is shown in Fig. 7. Although smaller area devices
exhibit higher modulation bandwidth, weaker light output
power will lead to poor signal-to-noise ratio (SNR). The
noise after passing through amplifiers can easily affect the
large-signal modulation. Therefore, poor signal-to-noise ratio
in smaller size devices can limit large signal modulation.
To compare the data rate enhancement of the SQW than TQW
micro-LEDs, large area devices (S50, T50) were chosen to
perform the large-signal modulation. Figure 8(a) shows the eye
diagrams of S50 at 600 and 800 Mbps respectively. Figure 8(b)
shows the eye diagrams of T50 at 300 and 400 Mbps respec-
tively. The eye diagram at 400 Mbps of T50 begins to close
due to the patterning effect, and S50 shows an open-eye
up to data rates of 800 Mbps. Roughly 200% enhancement
of the data transmission rate by utilizing fewer quantum
well numbers (SQW vs. TQW) is demonstrated, which is in
accordance with the modulation bandwidth enhancement (1.6
times). Due to the higher carrier concentration in a quantum
well which cause shorter carrier lifetime, S50 demonstrates
better data transmission quality. Moreover, because of our
high-speed photodetector bandwidth limit (1 GHz), we used
a Keysight M9502 arbitrary waveform generator (AWG) to
trigger S50. The eye diagrams of S50 at 1 Gbps and 1.5 Gbps
are shown in Fig. 8(c). Open-eye is achieved at data rates up
to 1.5 Gbps. Due to the limit of the detector’s bandwidth and
insufficient optical power received, we couldn’t demonstrate
the bit-error-rate test of the micro-LED in the current form.
In the future, by fabricating the micro-LED into the array
structure may help enhance the light output and perform a
better data transmission quality.
LAN et al.: 752-MHz MODULATION BANDWIDTH OF HIGH-SPEED BLUE MICRO LEDs
Fig. 8. (a) The eye diagrams of S50 at 600 and 800 Mbps triggered by pattern
generator, (b) The eye diagrams of T50 at 300 and 400 Mbps triggered by
pattern generator, and (c) The eye diagrams of S50 at 1 and 1.5 Gbps triggered
by arbitrary waveform generator (AWG).
VI. C ONCLUSION
We discuss the effect of quantum well numbers in the
active region on the modulation bandwidth and data rate of
GaN-based blue micro-LEDs. The designed micro-LEDs with
single-quantum well (SQW) facilitate higher recombination
rate and thus higher modulation bandwidth of about 752 MHz
(1.6 times) and data rates up to 1.5 Gbps (2 times) in
comparison with triple-quantum well (TQW) micro-LEDs.
According to the results of this work, it indicates that high-
speed blue micro-LEDs with fewer quantum well numbers are
more suitable for use in visible light communications because
of their higher modulation speed.
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Hao-Yu Lan was born in Taiwan in 1993. He
received the B.S. degree in photonics from National
Cheng Kung University, Tainan, Taiwan, in 2015,
and the M.S. degree from the Integrated Opto-
electronic Device Laboratory, Graduate Institute of
Photonics and Optoelectronics, National Taiwan
University, Taipei, Taiwan, in 2017. He is cur-
rently an R&D Engineer with the EUV Lithography
Department, Taiwan Semiconductor Manufacturing
Company, Hsinchu, Taiwan. His research interests
focus on compound semiconductor optoelectronics
devices, including ZnO-based micro-rod photo detector, GaAs-based inplane
gate transistors, InGaN/GaN-based blue lightemitting transistors, and blue
light-emitting diodes.
3300106
I-Chen Tseng was born in Taiwan in 1993. She
received the B.S. degree from the Department of
Physics National Sun Yatsen University, Taiwan, in
2016, the M.S. degree from the Integrated Optoelec-
tronic Device Laboratory, Graduate Institute of Pho-
tonics and Optoelectronics, National Taiwan Univer-
sity, Taipei, Taiwan. Her research interests include
GaN-based micro-LEDs array for the application of
visible light communication and InGaN/GaN light-
emitting transistors.
Hsuan-Yun Kao received the B.S. degree from the Department of Photonics,
National Cheng Kung University, Tainan, Taiwan, in 2015. He is currently
pursuing the M.S. degree with the Laboratory of Fiber Laser Communication
and Si Nano-Photonics, Graduate Institute of Photonics and Optoelectronics,
National Taiwan University, Taipei, Taiwan. His researching interests include
fiber-optic communication systems, digital signal processing, optical data
formats, and laser devices.
Yung-Hsiang Lin was born in Taipei, Taiwan, in 1978. He received the Ph.D.
degree in electronic engineering from Chung-Gung University, Taiwan, in
2011. Since 2007, he has been a member of the Research and Development
Center, Epistar Corporation, where he is currently a Manager. His research
interests lie in the area of nitride-based compound semiconductor materials
(AlN, GaN, AlGaN, and InGaN) and devices (LED, Laser diode, and HEMT).
In recent years, he has focused on developing ultraviolet LEDs (UVA to UVC)
and high-power blue laser diode.
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IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 54, NO. 5, OCTOBER 2018
Gong-Ru Lin (S’93–M’96–SM’04) received the
B.S. degree in physics from Soochow University,
Taipei, Taiwan, in 1988, and the M.S. and Ph.D.
degree in electro-optical engineering from National
Chiao Tung University, Hsinchu, Taiwan, in 1990
and 1996, respectively. He was a faculty member of
several universities in Taiwan from 1997 to 2006.
He has been a Full Professor with the Graduate
Institute of Photonics and Optoelectronics (GIPO)
and the Department of Electrical Engineering at
National Taiwan University (NTU) since 2006. He
is currently the Director of the GIPO, NTU. In the Laboratory of Fiber Laser
Communications and Si Nano-Photonics, his research interests include the
visible-light, millimeter-wave-over-fiber, and fiber optic communications, the
all-optical data processing, the femtosecond fiber lasers, the Si quantum-dot
photonics, the ultrafast photoconductors, and the optoelectronic phase-locked
loops. He is a fellow of SPIE, IET, IOP, and OSA. He used to serve as the
Chair of IEEE/Photonics Taipei Chapter. He has co-authored over 300 SCI-
ranked journal papers, 500 international conference papers, 10 book chapters,
and 30 invited talks during his research career. He has been the Distinguished
Professor of NTU since 2015, the Traveling Lecturer of the OSA since 2012,
the Visiting Lecturer of the SPIE since 2012, the Steering Committee of the
CLEO-PR Conference since 2018, and the President of the Taiwan Photonics
Society since 2017.
Chao-Hsin (Wayne) Wu (S’03–M’04) received the
B.S. and M.S. degree in electrical engineering from
National Taiwan University, Taipei, Taiwan, in 2002
and 2004, respectively, and the Ph.D. degree in
electrical and computer engineering from the Uni-
versity of Illinois at Urbana–Champaign, USA, in
2010. He is currently an Associate Professor with
the Department of Electrical Engineering, Gradu-
ate Institute of Photonics and Optoelectronics, and
the Graduate Institute of Electronics Engineering,
National Taiwan University, Taipei.
Before joining Prof. M. Feng and Prof. N. Holonyak, Jr., at UIUC, he
was a full-time Teaching Assistant in charge of the Automatic Control
Laboratory, Department of Electrical Engineering, National Taiwan University,
from 2005 to 2006. After receiving the Ph.D. degree in 2010, he was a Post-
Doctoral Research Fellow. He joined as a Faculty Member with National
Taiwan University in 2011. In Illinois, he pioneered the development of novel
III–V high-speed microelectronics and optoelectronics devices, including
InGaN/GaN heterojunction bipolar transistors, InGaP/GaAs power amplifiers,
and microcavity lasers. His research mainly focuses on the three-terminal
light-emitting transistors, and transistor lasers. He has demonstrated the world
record optical spontaneous modulation bandwidth of 7 GHz (corresponding to
a recombination lifetime of 23 ps), which is a breakthrough in semiconductor
device technology history for the past 47 years. He has published over 40
journal papers and 60 conference papers. His current research at National
Taiwan University includes high speed VCSELs for optical interconnects,
GaN-on-Si power and RF electronics, 2-D material field-effect transistors, Si
photonics, transistor lasers for optical logic gates, GaN LED for visible-light
communications.