NUMERICALS

1. Which semiconductor in Table 1-1 has the largest Eg? the smallest? What is the
corresponding ? How is the column III component related to Eg?
2. Calculate densities of Si and GaAs. The atomic weights of Si, Ga, and As are 28.1,
69.7, and 74.9, respectively.

3. In silicon, the lattice constant is 5.43 A. Assume a hard-sphere model (a) Calculate
the radius of a silicon atom, (b) Determine the density of silicon atoms in atoms/cm',
(c) Use the Avogadro constant to find the density of silicon.
4. The seed crystals used in the Czochralski process is usually necked down to a small
diaineter (5.5 mm) as a means to initiate dislocation-free growth. If die critical yield
strength of silicon is 2 x 106. calculate the maximum length of a silicon ingot 200 mm
in diameter that can be supported by such a seed.
 5. How many c hips of area 100 mm" can be placed on a wafer 300 mm in diameter?
Explain your assumptions regarding the chip shape and unused wafer perimeter.
How many chips of area 400 μm2 can be placed on a wafer 300 mm in diameter? Explain your
assumptions on the chip shape and unused wafer perimeter.

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6. For a class 100 clean room, find the number of dust particles per cubic meter with
particle sizes (a) between 0 5 and 1 micrometer b) between 1 and 2 micrometer, and
(c) above 2 micrometre

7. Calculate the average etch rate and etch rate uniformity on a 200-inm diameter
silicon wafer, assuming the etch rates at the centre, left, right, top. and bottom of the
wafer are 750,812, 765, 743 and795nm/min respectively.
Average etch rate=750+812+765+743+795)/5=773.