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NE Tanda peed ah a= oaneh + oe bondveli.! a h theveagn wif, °nra.te hence e no: 9) elechorr ic Bae DO rate — and thd will eléo 5 ehkehon b pay ane bonThe energy gap of silcon is 1.14 eV. What is the maximum waveiense, absorbing energy? mnath at wi ch siicon will bogin s)x3x10°(m/s) 1.141.641 = 10.901 « 10-7 m = 10901 A Try Yourself 1 In semiconductors at room temperature the | | (1) Valence band is partially empty and the conduction band is partially filled p (2) Valence band is completely filled and the conduction band is partiatly empty : (3) Valence band is completely filled | (4) Conduction band is completely empty i | E Carbon, silicon and germanium atoms have four valence electrons each. Th conduction bands are separated by energy band gaps represented by (E,).. respectively. Which of the following relationships is true in their case? 1 Ede? Eds. Q (E)o= Es 8) Ede* (Ey ) E< EsExample 2 Bi Solution : {In an intrinsic (pure) semiconductor, the number of conduction electrons is 7 * 10" per cubic | ‘metre. Find the (otal number of current carriers (electrons & holes) in @ same semiconductor of size 1 om * 1 om « tmm. In intrinsic semiconductor n, Given, n, = 7 x 10"? per m? x 10° m> So, total current carrier density = n, + n,, = 7 * 10" + 7 * 10" = 14 x 10'° per m? Now, total number of current carrier = Number density x volume = (14 * 10" per m’) x (10-2 m x 10 m x 10? m) = 14x 10? ai Try Yourself 3. In a pure semiconductor, the number of conduction electron is 6 x 10" per cubic metre. How many holes are there in a sample of size 1 cm x 1 cm x 2 mm? 4. C, Si and Ge have same lattice structure. Why is C insulator while Si and Ge intrinsic semiconductors?a Example 3: Pure Si at 300 K has equal electron (n,) and hole (n,) concentration of 2 * 10'° perm’. Doping by indium increases n,, to 4 x 10% per m?. Calculate n,, in the doped silicon. Solution: For extrinsic semiconductors, n,n, 2 2 (2x10%* we ) = 1x10" perm? eH (4X10) Try Yourself 5. A semiconductor is known to have an electron concentration of 6 * 10'2 per cubic centimeter and a hole concentration of 8 x 10° per cubic centimeter. Is this semiconductor N-type or P-type? 6. Suppose a pure Si crystal has 5 * 4028 atoms per m°. It is doped by 1 ppm concentration of pentavalent As, Calculate the number of electrons and holes. Given that n, = | 5 x 10'S per m*Zui vay Ziaro1 -h__junchim dock >. e 2A. fs pfu vnchton Wake in» pb dayne] pip os “tale,” ita ned ; Candee Alpe “dhe. -_To__tonehovet _ oe _juntbion a. hasan’ edt tipat Wt di. a don" Irpuvif, _dhel anhive " _ ferpiterductr’ become an od ee ee ra from’ ne ele” fo ashe Vee fick. —_p-Sele ow ee] 2 Condvefion elechon _ hnwnhlee 4. > holy P. Spe . 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P Prhnfinl dentin 2 _ fe : Be ad “ib yp biplhen s site Thin ____alllrvin __ not __ fo 0. tinea sn G, ness — an — “Hlcb then Tea appli lied ps ge hyph Kot = dpa pd ea ay f AE ek a ae enya bien | wt — fn eeatsdane meshed a conne: chel_fo Ve= Example'4: Find the equivalent resistance of the network shown in the figure between the points A and 6 if (Assume diode is ideal) O Vy>Vp (i) Vy < Vg 12Q wi — |» A B 42ample 5 : The diode used in the circuit shown in the figure has @ constant voltage drop of 0.5 V at al. currents and @ maximum power rating of 100 mW. What should be the value of the resistor R connected in series with the diode, for obtaining maximum current put less |? “WWW> Rry Yourself We What is the current through an ideal p-n junction diode shown in figure below? poise] 1V (1) Zero (2) 10 mA 8) 20 mA (4) 50 mA Hint : Join the two grounded points. If in @ p-n junction diode, a sinusoidal input signal is applied as shown Vv. Then, the output signal across R, will be Vo vy (1) @)13. 1. Potential drop across forwai Y % 3) (4) In a reverse biased diode when the applied voltage changes by 1 V, the current is found to change by 0.5 WA. The reverse bias resistance of the diode is (1) 2 108 @ 2x 1082 (3) 2002 4) 22 Hint: R= AV. al rd junction p-n diode is 0.7 V. If a battery of 4 V is applied, calculate the resistance to be put in series, if the maximum current in the circuit is § mA. (1) 660.2 ) 3500 @) 4759 (@) 5000 Hint : R= In a semiconductor diode the barrier potential offers opposition to only (1) Majority carrier in both regions (2) Minority carrier in both regions (3) Free electrons in the n-region (4) Holes in the p-region ._ A forward biased diode is © py yg 1 wy @ 24 Vw wv -2V Hint : P-side should be at high voltage relative to N-side In a p-n junction having depletion layer of thickness 10-* m the Then the electric field is (1) 10-5 Vim (2) 3 * 10° Vim (3) 10° Vim (4) 3 « 107 Vim Potential across it is 0.3 V. Hint : Find the incorrect statement regarding reverse saturation current in p-n junction diode. (1) Reverse saturation current is also known as leakage current (2) Current doubles for every 100°C rise in temperature (3) Current carriers are produced by thermal agitation (4). Current is due to minority carriers 3. The diode used in the circuit shown in the figure has a constant voltage drop of 0.5 Vat all currents and a maximum power rating of 100. mWW. What should be the value of the resistor R, connected in series with the diode, for obtaining maximum current /?R i —— | 15V (1) 200 2 . (2) 6.67 Q @) 52 (@) 159yqmple 14.23 A silicon diode is connected to a load resistance g, as shown in the figure. LetV;,, =10 V and R, =10kQ. (a) If barrier voltage, Vz = 0.7 V then calculate (i) output voltage across R;, (ii) current in diode and (iti) forward resistance. Vp OIf diode is assumed ideal, then what will be (i) output voltage and ‘i) output current in diode? Sol tye er tr LWExample 14.19 Find current passing through 4.Q and 8Q resistance in the circuit shown in figure. Dp. 40 D 82 | 12V Gal Tn tha wee ee -_ bample 14.21 Find the net resistance between two points P and “Uf the value of each resistances shown in the figure is 10 Q.fxample 14.20 Consider the circuit (A) So diagram shown below. Two ammeters A; and Ay are connected across a diode and resistor respectively. Find the amount of current flowing through these two KI ammeters. Neglect the resistances of the @ meters, 5Vframple 14.22 (a) Calculate the value of V, and i if the silicon and germanium diode start conducting at 0.7 V and 0.3 V, respectively. : Ge p> Si = Rypg5kQ oVo ml ’ J ill be the (b) If the Ge diode connection is now reversed, what will ve i? new values of Vo and i7. Calculate the current / in the following circuit, if all the diodes are ideal. All resistances are of 200 & 200 V (1) Zero (2) 1A (3) 2A (4) 4A mow: aannnk Dh 141-47823456ro 10. 7 uit shown in the figure contains two diog echwith 2 forward resistance of 80.9 and with intr dackward resistance. If the battery of 6 connected in the circuit, then the current 8 100 & resistance is Vis t through 502 > L502 + fY 4009 a kKewwan— (i) Zeo (2) 0.02 @) 0.03 (4) 0.0364 A semiconductor X is made by doping a germaniurn crystal with arsenic (Z = 33). A second semiconductor Y is made by doping germanium with indium (Z = 49). X and Y are used to form a junction ‘as shown in figure and connected to a battery as ‘shown. Which of following statement is correct? XT] _ I (1) X is p-type, Y is n-type and the junction is forward biased @) X is n-type, Y is p-type and the junction is forward biased () X is p-type, ¥ is n-type and the junction is reverse biased (@) X's mtype, Y is p-type and the junction is reverse biased Wibich ofthe folowing breakdown of p-n junction is reversible? (4) Avalanche breakdown (2) Zener breakdown (2) Dielectric breakdown (4) All of thesehe danfl, Yb Diode! = f Ula PO tlerte— Klan) : iA pecially _oltaltgnel, font hion. dint. 4 1 Whih Can opera fn oe bth divin ft om tenhinw “os bit houb _ a pee They awe byl dpe St hocks. (hi men! Hoel Sable. Kon be) Pp See 4 Appice abies! — Zenw Zen die a) Volbepe regula tv! > R Corel a Whe boctuahi + Se Me fect jak . ee ar) ce ee a o STN genta Hom "Vz. 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If a small amount of As is added to it, then its electrical conductivity (1) Decreases (2) Increases (3) Remains unchanged (4) Becomes zero ‘The mobility of free electron is greater than that of free holes because they (1) Carry negative charge (2) Are heavy (3) Mutually collide less (4) Require low energy to continue their motion Carbon, silicon and germanium have four valence electrons each. At room temperature which one of th following statements is most appropriate? (1) The number of free conduction electrons is negligibly small in all the three (2) The number of free electrons for conduction is significant in all the three (3) The number of free electrons for conduction is significant only in Si and Ge but small in C (4) The number of free electrons for conduction is significant in C but small in Si and Ge Which circuit will not show current in ammeter? oH, “ @) H—@— 1-—@ } Dt ot | Loyd | 8) 4) ; +O 4 {Aakash Educational Services Limited - Regd. Otfco Aakash Tower, 8, Pusa Rad, New niinivaannw ex~avaceveoAdGElja the energy band diagram of ama Jectrons respect A material shown batow, the open citcles and filed circles denote holes and electrons respectively, The material is Hen clieles and filed clas danota holes a (1) A paype semiconductor 2) An mtype semiconductor (3) An insulator (a) Ametal A p-n photo diode is made of a material with ab: ee a band gap of 2 eV, The roncy © adiati that can be absorbed by the material is nearly ind gap of 2 eV, The minimum frequancy of the radiation 10" Hz wy 1s 10 a @) 20% 10" He @) 10s 104Hz (a) 58 10" He ance of 300 2 is Consider the junction diode is ideal, The value of current through the re: av -1V ——Pii—+ 300.2 (1) 0.001 A . @) 01a @) 001A (4) Zoro ping; on an average, one indium atom per Asilicon specimen is made into a p-type semiconductor by doy en is 5 x 10° atmm’, then the 5 x 107 silicon atoms. If the number density of atoms in the silicon speci number of acceptor atoms in silicon per cubic centimeter will be (1) 25 x 10° (2) 25% 10% @) 1.0 x 10% (4) 1.0» 10 Aull wave rectifier circuit along with the input and output are shown in the diode D, is (are) figure. The contribution from the v laput t 2, —pi— Input | Fo [ouut Lp —. y Output LEVEN, QaAc (4) A.B,C,D ae @) B,D In a p-n junction having depletion electric field is (1) 107 V mrt (3) 10° Vv mrt 1 layer of thickness 10° m, the potontial difference across it is 0.1 V. The 2) 10°Vim (4) 105 Vm416. In a full wave rectifier circuit operating from 50 Hz mains frequency, the fundamental frequency in the ripple would be (1) 25 Hz (2) 50 Hz (3) 70.7 Hz (4) 100 Hz The value of form factor in case of half wave rectifier is (4) 4.11 (2) 1.57 (3) 1.27 (4) 0.48(Special Purpose p-n Junction Diodes) 18. 19. 20. The zener diode is used for (1) Rectification (2) Amplification (3) Stabilization (4) All of these A junction diode, in which one of the p or n-sections is made very thin, can be used to convert light energy into electrical energy, then the diode is called (1) Light emitting diode (2) Zener diode (3) Solar cell (4) All of these The material suitable for making a solar cell is (1) PbS (2) GaAs (3) CdSe (4) Ge| simple Circuits NEET/ AIMS / JIM lu (Application of Junction Diode as a Rectigy " 42, In the circuit shown, the input waveform jg Which of the following correctly gives th mn waveform across R,? 2 Out a Pe oT (4) ch, 43. The maximum efficiency of a full wave rectiferis (y 4x100% © 2) %x100% ® (3) 40% (4) 80% 44. The output across the load resistance Ris (1) Half wave rectified (2) Full wave rectified (3) Quarter wave rectified (a) AC in 45. Inthe circuit shown, the average power dissipat@? the resistor is (assume diode to be idea!) R ane Esinwt a 4) <2 2) a) OR -) 7 @ & (4) Zeco i a a a baie Oth 10005 Pi gay apaanaeelgiggram shown below, the input is across inh eipals A and C and the output is across we ‘shen the output is an A (i) Zer0 (a) Same as input @) Full wave rectified (4) Half wave rectified 2 (geeial Purpose p-n Junction Diodes) 47. Inazener diode, break down occurs in reverse bias due to (1) Impactionisation (2) Internal field emission w (8) High doping concentration AN (4) Allof these 18. A psn photodiode is manufactured from a semiconductor with band gap of 3.1 eV. Which of the following wavelengths can be detected by it? (1) 4000 A (2) 3900 A 8) 42004 2 (4) Both (1) & (2) Zener breakdown takes place if (1) Doped impurity is low 2) Doped impurity is high (8) Less impurity in N-part 7 (4) Less impurity in p-type 'n a pan junction solar cell, the value of photo- ®lectromotive force produced by monochromatic ‘ght is proportional to the 2 ) Voltage applied at the p-n junction {2) Barrier voltage at the p-n junction (8) Intensity of light falling on the cell (4) Frequency of light falling on the call “Stash Edudational Services ited“ Regd Office: Aakash 121. What is the value of output voltage V, in the circuit shown in the figure? 2kQ + 6kQ Ms 20V 2 6V (1) 6V (2) 14V (3) 20V (4) 26V 22. Which of the following pn junction is not used in reverse bias? 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Reo 7 PR 88g en Rig py Ac _ forte fie five tees (ar [ * an i ere | sein] ss saosin e259)- (Ww) _ Tremntonde fonts : m= “te - Op ayeTeen bide an Swe LF —— El Pp lpg Kivehhepy's fos © = Lo R i 7 Ry PK ihe VouL | ___ — ane Moc ~ In ip fide Vip I Ven = Sp kp bn ofp wie Vn = Ven = fe Re ancel ii ii i Pe ass. | a> Whe Vip in voy tel, yp = ancl Aasrte, f =o > tanwi will b— fa ad =) region and | Vy=_V, Ves J — Whe, Vip b In ovbence] Dn fsus Lo L. flows — > few rind will be Ochs opto. _ Vp“ cleewtases = forthe preveane jin output derrcant Ord heresy joo ag jon. =| Nop > wk He ) ' y Betive | Sehrehio. — ce TP her bifor ae aD pitch. cul -Yf —> Stith oH : T UD v | Saturahin >with oy | Fron tritel Wek ay om ny | T 1 7 ; ; | 7 tr cH ty 4 ond Sabrradien “giea | fa. ahve AD On© Example 10 A change of 8.0 mA in the emitter current brings a change of 7.9 mA in the collector current. How much change in the base current is required to have the same change 7.9 mA in the collector current ? Find the values of « and B.® Example 11 A transistor is used in common-emitter mode i ope circuit, When a signal of 20 mV is added to the base-emitter See fer current changes by 20 uA and the collector current changes by 2 A. pe ase resistance is 5 kQ. Calculate (a) the factor B (b) the noni mA. The load transconductance and (d) the voltage gain. esistance R,,, (c) the© Example 12 An n-p-n transistor is connected in common-emitter configuration in which collector supply is 8V and the voltage drop across the load resistance of 800 Q connected in the collector circuit is 0.8 V. If current amplification factor is 25, determine collector-emitter voltage and base current. If the internal resistance of the transistor is 200 Q, calculate the voltage gain and the power gain. Solution The corresponding circuit is shown in figure. ic R O8v le© Example 13 An n-p-n transistor in a common-emitter mode is used as a simple voltage amplifier with a collector current of 4 mA. The positive terminal of a8 V. batiery is connected to the collector through a load resistance R, and to the base through a resistance Rp. The collector-emitter voltage Voz =4V, the base-emitter voltage Vg = 0.6 V and the current amplification factor B = 100. Calculate the values of Ry, and Rp. Solution Given, i, = 4 mA—Gytuy't fps bi ony SAUDE LDP.Some useful postulates and laws of boolean algebra (i) Boolean postulates (a) O+A=A (b)1+A=1 (c) 0-A=0 ()14=A (ec) A+A =1 (ii) Identity law (a) A+A=A (b) A-A=A (iii) Negation law A=A (iv) De-Morgan’s theorem It states that t of the whole sum is equal to the prod: individual complements he complement uct of and vice-versa, i.e.,(a) A+ B=A- De-Morgan’s theorem also states that, A +B=A-B=A-B (b) A-B=A+B=A+B (v) Commutative laws (a) A+B=B+A (b) A-B=B-A (vi) Associative laws (a) A+(B+C)=(A+B)+C (b) A-(B-C) =(A-B)-C (vii) Distributive laws (a A-B+C)=A-B+A-C (b) (A+B)-(A+C)=A+BC viii) Absorption laws (a) A+A-B=A (b) A-(4 +B) = ()A-(A+A)=A ()A-(A+B)= (ix) Boolean identities (a)A+AB=A+B (b) A(A + B) = AB (c) A + BC =(A + BYA+C) (d) (A+B)-(A+C) = AG + AB B (bl) A-B=A+B €0: A A-Bi Brample 11 + ‘Show the output waveform of OR gate for the following input waveforms of A and B Ae >t ea LI LU +t Selution: For OR gate Y= A + B, Hence the output waveform will be as follows. (0+0=0,0+1=1,140=1,141=1) ye >t BSS Try Yourself th bt t f, Act 23. Show the output waveform of OR gate for the following input waveforms of A and 8. Bea : ———-3 | Combinehin = feo ns ee a 7 NAM — fale - tg +4 =i 5 = pes oe ng | - 2 Dt Ba _ a | \emal | 4 ° BI \ | o\) \ | | Le \ VA o W_ | Nog fal a oF aS Bea | 8 lyme o|o | a, |) GO \ . \ Dd 0 \ \ { oO| Bote ft ising. NBND. foe ie AND Gade : 5 s SE sci» tal ep POE, Boose 1elin USING NoR gah iF x a OS— | ther gate. — - — —— > XOR gale belgie OR fa SD vee = Bhs AB = (Asa) > (RB)Example 14.49 Draw the truth table for the function Y of A and B for the following logic gate. a5Example 14.55 Write the truth table for the circuit given in figure. Ahime 2 UY, lc Linear or analog IC's : The linear IC's have analog input and and continuously over a range of Values between @ maximum at Output signals whi AMP) is one of Very useful near IC. ich change smoothly nd minimum, Oper rational amplifies (OP, tegration di (less than 10 logic gates) meqj ital, IC's are (LSI) (less than 1000 logic ium scale integration Gates). Very large sca divided into Scale integration (Ssi (MSI) (less than 100 logic gates) Large scale integration fe integration (VLSi) (Mo re than 1000 logic gates) Hl ly ae the lengths of the emitter, base ang col (hehe lector of a transistor then 5 Q@hh ks, ves an output of 3 \y for an input of 0.01 Vif 'S 1kQ, then the collec 12, Acommon emitter amplifier g 100 and the input resistance Current gain of the transistor is ctor resistance is (1) 30 ka Q) 3ka (3) 1kQ (4) 6kQ 13. Ina common emitter amplifier the phase difference bet ween the input signal voltage and output voltage is : ws @ 20 x @; @ 14. The minimum potential difference between the base and emitter required to ‘switch a silicon transistor ‘ON’ is approximately Qaiv (2) 3v @) 5V (4) 42V 15, Which of. the following represents NAND- gate? oP ape oe ®) Do 6. The circuit is equivalent to sD (1) NOR gate (2) OR gate (3) AND gate (4) NAND gate Feeprerer20. c——__] s—D-p,, The output y, when all three inputs are first high and then low, will respectively be (i) 4,4 (2) 0,1 &) 0.0 (4) 1,0 To which logic gate does the truth table given in the figure correspond? A B y 0 0 0 1 0 0 0 1 0 1 4 1 (1) OR gate (2) AND gate (3) NAND gate (4) NOR gate Which of the following is not equal to 1 in Boolean algebra? Ca 2) Ara @) aa 4) aa An n-p-n transistor circuit is arranged as shown in the figure. It is a common (1) Base amplifier circuit 1 (2) Emitter amplifier circuit N RV (3) Collector amplifier circuit y . L (4) None of these 4 LL,Objective Type Questions (Classification of Metals, Conductors and Semiconductors) 1. The resistivity of a semiconductor depends upon (1) Size of the atom (2) The nature of atoms (3) Type of bonds (4) Size and types of motion (Classification of Solids on the Basis of Energy Bands) 2. A solid having uppermost energy band partially filed with electrons is called (1) An insulator 2) Aconductor @) A semiconductor (4) None of these 3. The energy gap for an insulator may be (1) 112 (2) 0.02 ev (3) 6ev (4) 0.7 ev (Intrinsic Semiconductor) 4, The semiconductors are generally (1) Monovalent (2) Divalent (3) Trivalent (4) Tetravalent 5. A pure semiconductor has (1) An infinite resistance at 0°C (2) A finite resistance which does not depend upon temperature (3) A finite resistance which increases with temperature (4) A finite resistance which decreases with temperature 6. The rate of recombination or generation are governed by the law(s) of (1) Mass conservation 2) Electrical neutrality (3) Thermodynamics (4) Chromodynamios {Extrinsic Semiconductor) 7. The impurity atoms with which pure silicon should be doped to make a p-type semiconductor are those of (1) Phosphorus (2) Antimony (3) Boron (4) Copper 8. In semiconductors, which of the following relations is correct at thermal equilibrium? (1) =n, =, (2) n? = n,n, @) m= 22 Dy Me * My ‘iakxah Educational Services Limited - Regd. Office : Aakash Tower Al Bucs Band aie re13, d & Competitive Exams (Level) ‘An mtype semiconductor is electrically (1) Positive (2) Negative (3) May be positive or negative (4) Neutral In an intrinsic semiconductor, the density of conduction electrons is 7.07 * 10'S m3. When it is doped with indium, the density of holes becomes 5 « 10? m-. Find the density of conduction electrons in doped semiconductor (1) Ze @) 1% 109 mr? (8) 7% 10° mr? (8) 5 «102 ms IFN, is number density of acceptor atoms added and Np is number density of donor atoms added to a semiconductor, n, and n, are the number density of electrons and holes in it, then (1) 1, = Np ny = Ny 2) n= Ny, = Np @) n+ Ny Junction) 'n an unbiased p-n junction which of the following is correct? (1) p-side is at higher potential than n-side (2) n-side is at higher potential than p-side (2) Both p-side and n-side are at the same potential (4) Any of the above is possible depending upon the carrier density in the two sides (Semiconductor Diode) In a semiconductor diode, the reverse biased Current is due to drift of free electrons and holes caused by (1) Thermal excitations only (2) Impurity atoms only (3) Both (1) & (2) (4) Neither (1) nor (2) Semiconductor Electronics : Materials, Devices and Sim 14, 15. ple Circuits /499” 'n a semiconductor diode, 'N-side is put at potential of (1) Conduct P-side is earthed and ~2V, the diode shalt (2) Not conduct (3) Conduct partially (4) Break down ‘Two identical p-n junctions may be connected in Series with a battery in three ways as showm in the adjoining figure, The potential drop across the p-n junctions are equal in PI ‘Second circuit ta Third Grout (1) First and second circuits (2) Second and third circuits (3) Third and first circuits (4) All of these (Application of Junction Diode as a Rectifier) 16. 7. Ina full wave rectifier circuit operating from 50 Hz mains frequency, the fundamental frequency in the Fipple would be (1) 25 Hz (2) 50 Hz 8) 70.7 Hz (4) 100 Hz Tho value of form factor in case of half wave reotitior is (1) tat (2) 1.57 (3) 127 wo pga 10005 PHL OTTATEZIESS110) Semiconductor Electronics : Materials, Devices and Simple Circuits (Special Purpose p-n Junction Diodes) 18. The zener diode is used for (1) Rectification (2) Amplification (3) Stabilization (4) Allof these 19. A junction diode, in which one of the p or n-sections is made very thin, can be used to convert light energy into electrical energy, then the diode is called (1) Light emitting diode (2) Zener diode () Solar cell (4) Allof these 20. The material suitable for making a solar call is (1) Pos 2) Gars (3) CdSe (4) Ge (Junetion Transistor) 21. In which of the configurations of a transistor, the power gain is highest? (1) Common base (2) Common emitter (3) Common collector (4) Same in al the three 22. In.acommon base amplifier, the phase difference between the input signal voltage and the output voltage (across collector and base) is (1) Zero Wap Ta ate enn teens sare Board & Competitive Exams (Ley 1p {evel 23, The current gain f of a transistor is 50. The ings resistance of the transistor, when Used in the common emitter configuration, is 1 K2. The pea, value of the collector a.c. current for an alternating peak input voltage 0.01V is (1) 100 pa (2) 250 pA (3) 500 WA (4) 800 pA 24, In a common emitter transistor circuit, the base — current is 40 pA, then Veg is Veo = 10V * 2kQ 245 kQ c () 2v @) 02v (3) 08V 4) Zero 25. Ina transistor the base is very lightly doped as compared to the emitter because by doing so (1) The flow across the base region is mainly because of electrons (2) The flow across the base region is mainly because of holes (8) Recombination is decreased in the base region (4) Base current is high 26, A transistor is operated in CE configuration at Vig = 2 V such that a change in base current from 100 WA to 200 WA produces a change in the Collector current from 9 mA to 16,5 mA. The value of current gain, p is (1) 45 (2) 50 (3) 60 (4) 75“sg gompoutive Exams (Level) au ~~ input resistance of a silicon transistoris 1 KO. If a7, Teg current is changed by 100 1A, it causes the spange in collector current by 2 mA, This transistor teased as a CE amplifier with a load resistance of fast. Whats the ac voltage gain of ampliior? q) 10 @ 10 {@) 500 () 200 23, The relationship between «and is given by (1) a= @ =a B a @ *T48 pete “ YT 22. Input signal to a common emitter amplifier having a voltage gain of 1000 is given by v, = (0.004 V) sin (ot + 122). The corresponding output signal is (1) (OV) sin (at * 1/2) (2) (0.004V) cos (wt + 772) (3) (4V) cos (wt - 2) (4) (4V) sin (ot - 2) Din a common base transistor circuit, the current gain is 0.98, On changing emitter current by 5.00 mA, the change in collector current is (1) 0.196 mA (2) 2.45 mA (3) 4.9 mA (4) 5.4 mA 31, For a transistor amplifier power gain and voltage gain are 7.5 and 2.5 respectively: The value of the current gain will be (1) 0.33 2) 0.66 (3) 0.99 Semiconductor Electronics : Materials, Devices and Simple Circuits | 141 32, The input resistance of a common-emitter amplifier is2kQand a.c. current gainis 20. If the load resistor used is 5 kQ, calculate the transconductance of the (ransistor used (1) 0.01 2 (2) 0.03 2" @) 0.04. 2 (4) 0.07 a+ In a silicon transistor, a change of 7.89 mA in the emitter current produces a change of 7.8 mA in the collector current. What change in the base current is necessary to produce an equivalent change in the collector current? (1) 9mA (2) 0.9 mA (8) 0.09 mA (4) Ze (Digital Electronics and Logic Gates) 34, The adjoining logic symbol is equivalent to A B (1) OR gate (2) AND gate (@) NOT gate (4) NAND gate 35. Which of the following gates corresponds to the truth table given below? Al ely] a[i[o t[o[4 0 aid ofolt (1) NAND (2) NOR (3) XOR (4) OR anise Rand orice = Aak=Sh Tove 3) Pusa Road) New Deti-110005 Phi 011-4762345° ices S: o 236, 37, The combination of gates shown in the circuit is equivalent to —D4 8 ) > (1) OR (2) AND (3) NAND (4) NOR Write down the boolean expression for output ¥ of a system shown in figure a bor} tp. ts Qa (1) AB+AB (2) (A+B)(A+B) (3) AB+AB (4) AB+(A+B) (Integrated Circuits) 38. Operational amplifier is a (1) Digital 1c (2) Linear Ic (3) OR gate (4) AND gatea SECTION -A (Somlconductor Diodo) Objective Type Questions 5. In tho figura given, voltage of point A In (consider fie ; diode Is ideal) tessiication of Solids on the Basis of Enorgy - ands) i —pHom— 4, The olectrical conductivity of a semiconductor wv ee increases when electromagnetic radiation of wy -Vavelength shorter than 2480 nm is incident on it, e | ‘The band gap of the semiconductor is () ov @) -3v (1) 03eV 2) 05ev @ 23V ) -27V @) 07 ev (4) 1.1ev 6. Four equal resistors, each of resistance 10 2, are (intrinsic Semiconductor) connected as shown in the circuit diagram. The 7 equivalent resistance between A and Bis 2. Apotential difference of 2.5 V is applied across the faces of a germanium crystal plate. The face area of, 102 109 the crystal is 1 cm? and its thickness is 1.0 mm. The free electron concentration in germanium is A L_.B 2x 10"? m® and the electron and holes mobilities are 0.33 mV s and 0.17 m#lV s respectively. The current across the plate will be 102 109 (t) 028 2) 044 (yrsa: (2) 102 @) 068A (4) 08A a @) 20.9 (Extrinsic Semiconductor) ® 7 @ 40 3. Pure Si at 300 K has hole and electron densities are 1.5 x 10° m-3. Doping it by an impurity 7. Calculate the current / in the following circuit, if all increases the hole density n,, to 4.5 » 10% mr’. the diodes are ideal. All resistances are of 200 2 Electron density in the doped silicon is (1) 1.5 x 10° m3 eh (2) 3.0 x 10% m2 Lp wi f @) 5x 109m (4) 3x 408 me (0-2 Junction) L+— et 4. The depletion region of p-n junction has a thickness ' s00v Of the e order of (1) Zero (1) 10-% m 2) 105m @ 48 @) 10m @) 2A (4) 102 (4) 4A Tee al a ww Bsin-t10008 PHO kash Fah. nt Cansinae | imitad « Read, Office : Aakash Tower, 8, Puse Road,orlals, Dovicos The circuit shown i n tho figuro contains two ho diodes ba with a forward resistance of: 50.Q and with infinite ackwatd Peale: If the battery of 6 V is 'ecled in the circuit, then the cu the 100 & resistance is i deed pp f98 kw i 1002 (1) Zero, (2) 0.02 @) 0.03.4 (4) 0.036 A ‘A semiconductor X is made by doping a germanium crystal with arsenic (Z = 33). A second semiconductor Y is made by doping germanium with indium (2 = 49), X and Y are used to form a junction as shown in figure and connected to a battery as shown. Which of following statement is correct? XY] Ly (1) X is p-type, Y is n-type and the junction is forward biased (2) X is n-type, Y.is p-type and the junction is forward biased (3) X is p-type, Y is n-type and the junction is reverse biased (4) X is n-type, Y Is p-type and the junction is reverse biased Which of the following breakdown of p-n junction is reversible? (1) Avalanche breakdown (2) Zenerbreakdown @) Dielectric breakdown (4) Allofthese All the. diodes are, ideal. The current flowing in 2 9 resistor connected between the diodes D, and D, is 49, ey 29 & 12. Dy) 72 Py 52 and Simple Circt s NEET/ AIMS /JIPMER (g (Application of Junction Diode as a Rectitiey 42. In tho circuit shown, the input waveform ig Which of the following correctly gives the ov a waveform across R,? utp, Input Do o LY a LV \ 8) V/ () 43, The maximum efficiency of a full wave rectifier is (1) 4x100% ® @ &x100% © (3) 40% (4) 80% 14, The output across the load resistance Ris (1) Half wave rectified (2) Full wave rectified 8) Quarter wave rectified (4) AC 16. Inthe circuit shown, the average power dissipated? the resistor is (assume diode to be ideal) R<< ————— inthe diagram shown below, the input is across ihe terminals A and C and the Output is across B and D. Then the output is B (1) Ze 2) Same as input @) Full wave rectified (4) Half wave rectified Geecial Purpose p-n Junction Diodes) (1) Impactionisation (2) Internal field emission 8) High doping concentration (4) Allofthese 18 A po Semiconductor with band gap {he following wavelengths can (1) 40004. (2) 39004, @) 4200 (4) Both (1) & (2) of 3.1 eV. Which of be detected by itz "8. Zener breakdown takes place if (1) Doped impurity is low (2) Doped impurity is high (3) Less impurity in N-part (4) Less impurity in p-type %. \n a pom junction solar cel, the value of photo- Clectromotive force produced by monochromatic light is proportional to the (1) Voltage applied at the p-n Junction (2) Barrier voltage at the p-n junction (3) Intensity of tight falling on the cell (4) Frequency of light falling on the cell - % Tower, 8, Pusa Road, New Dein Aakash Educational Services Limited - Regd. Office : Aakash To Semiconductor Electronics : Materials, Devices and Simple Circuits 131 21. What is the value of output voltage V, in the circuit shown in the figure? 2a ‘| K Foka \, “4 ev | () 6v (2) 14V @) 20v (4) 26v 22. Which of the folowing pn junction is not used in reverse bias? (1) LED @ Solar cen @) Zener diode 4) Both (1) & (2) (unetion Transistor) 3B In an pen transistor working in active mode, the depletion region (1) Isnotformed @) At emitter-base junction is wider Collector-base junction ) At omiter-base junction is thinner than that at collector-base junction than that at (4) tthe two junctions have e quals width transistor has a current amplification factor of 60, 'naCE ample, inputresistanceie + kQand output voltage is 0.01 V. The ransconductance is (ing units) (1) 105 (2) 6x 192 8) 6x10" @ 10 ‘A common emitter amplifier is designed with pry transistor (a =.0.99), inputimpedence is 1 ke and load is 10 k2. The vottage gain willbe (1) 99 @) 99 (3) 990 (4) 9809 Acommon emitter tran sistor amplifier gain of 50. If the load Fesistance is 9 Input resistance is 600 the Voltage XG ang the amplifier will be Sain of the () 90 300 Oe ) 100 10005 Bh G; —— N1-4765-132 Semiconductor Electronics : Materials, Devices and Simpl TNENNS. 27. Ina transistor the collector current is always less than the emitter current because (1) Collector side is reverse biased and the emitter side is forward biased (2) Collector being reverse biased, attracts less electrons (3) A few electrons are lost in the base and only remaining one’s reach the collector (4) Collector side is forward biased and emitter side is reverse biased 28, In an n-p-n transistor, the collector current is 10 mA. If 90% of the electrons emitted reach the collector, then the emitter current will be (1) 9mA (2) 11 mA (@) 1 mA (4) 0.1 mA 29, A transistor cannot be used as an (1) Amplifier Q) Oscillator @) Modulator (4) Restiier Whats the power gain in a CE amplifier, where input resistance is 3 k®@ and load resistance 24 ko given 6? (2) 288 (4) 480 9c = 0.99 is used in a common ‘ifthe load resistance is 4.5 kQ and Junction is — a 38, Thegiventransisoramplfier connections 7 #20V 10k2 250 kQ (1) Common base connection (2) Common emitter connection (8) Common collector connection (4) Allof these 34, Three amplifiers each having voltage gain 10, ae connected in series. The resultant gain would be (1) 10 (2) 3% 40 (3) 1000 as 35. Ina transistor (fp = 50), the voltage across 5 ko istance in collector circuit is 5 V. The base load resi current is (1) 0.02 mA (2) 0.03 mA (8) 0.08 mA (4) 0.09 mA (Digital Electronics and Logic Gates) 36. Forinputs (A, B) and output (Y) of the following gate ‘can be expressed as A B Y (i) A@B Q) AB (@) A+B @) A+B 37. Logic gate realised from pn junctions shown in figure is A Y B (1) OR gate (2) AND gate (3) NOT gate (4) NOR gate + Aakash Tower, 8, Pusa Road, New Delhi-110005 Ph. 011476204564 oR gate (2) AND gate a) XNOR gate (4) NOR gate igure shows the practical realisation of a logic ae Wdentiy the logic gate (1) NANO (2) NOR @) YOR (4) XNOR SECTION - B Previous Years Questions 1 An LED (s constructed from a p-n junction dode using GaAsP. The energy gap is 19 eV. The wavelength of the ight emited wil be equal to [NEET-2019 (Odisha)} (1) 654 * 10-1 m @ 104% 10% m G) 654nm (4) 654A 2 The circuit diagram shown here corresponds t0 the bogie gate {NEET-2019 (Odisha)} +6V R A 0 1 3 2 4 1 LeDy) R (1) NAND (2) NOR 3) AND ials, Devices and Simply Circuits 1449) For a p-type semiconductor, which of the following statements is true 7 [NEET-2019} (1) Electrons are the majority carriers and trivalent atoms are the dopants (2) Holes are the majority carriers and trivalent atoms are the dopants. (3) Holes are the majority carriers and pentavalent atoms are the dopants. (4) Electrons are the majority carriers and pentavalent atoms are the dopants. sv R oo LED (Y) R 0 Ly 47 The correct Boolean operation represented by the circuit diagram drawn is [NEET-2019] (1) AND (2) OR (3) NAND (4) NOR In the combination of the following gates the output Y can be written in terms of inputs A and B as (NEET-2018] A Tee () AB Q) A-B+AB (3) AVB (a) +AB {n the circuit shown in the figure, the input voltage V,Is 20 V, Vgc = 0 and Veg = 0. The values of Ip, |, and fare given by INEET-2018] 20v Resa ko ic v Ry SOK BI fe 2) 1p =25 pA, |p = 5 mA, B= 200 8) Ip = 40 pA, |p = 5 mA, B= 125 (4) Ig = 20 WA, Ip = 5 mA, = 250 ‘Aakash Tower, 8, Pusa Road, New Delhi-410008 Ph 011-47028456