IGBT

HighspeedDuoPackIGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery
anti-paralleldiode

IKW40N60H3
600VDuoPackIGBTandDiode
Highspeedswitchingseriesthirdgeneration

Datasheet

IndustrialPowerControl http://www.Datasheet4U.com
 IKW40N60H3
Highspeedswitchingseriesthirdgeneration

HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast
recoveryanti-paralleldiode

Features: C

TRENCHSTOPTMtechnologyoffering
•verylowVCEsat
•lowEMI
•Verysoft,fastrecoveryanti-paralleldiode
•maximumjunctiontemperature175°C G
•qualifiedaccordingtoJEDECfortargetapplications E
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:

•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
G
C
E

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IKW40N60H3 600V 40A 1.95V 175°C K40H603 PG-TO247-3

2 Rev.2.4,2014-03-12
 IKW40N60H3
Highspeedswitchingseriesthirdgeneration

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

3 Rev.2.4,2014-03-12
 IKW40N60H3
Highspeedswitchingseriesthirdgeneration

Maximumratings
Parameter Symbol Value Unit
Collector-emittervoltage,Tvj≥25°C VCE 600 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C IC 80.0 A
TC=100°C 40.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 160.0 A
Turn off safe operating area
- 160.0 A
VCE≤600V,Tvj≤175°C,tp=1µs
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C IF 40.0 A
TC=100°C 20.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 160.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000 tSC µs
Time between short circuits: ≥ 1.0s
Tvj=150°C 5
PowerdissipationTC=25°C 306.0
Ptot W
PowerdissipationTC=100°C 153.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
°C
wave soldering 1.6 mm (0.063 in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
Rth(j-c) 0.49 K/W
junction - case
Diode thermal resistance,
Rth(j-c) 1.50 K/W
junction - case
Thermal resistance
Rth(j-a) 40 K/W
junction - ambient

4 Rev.2.4,2014-03-12
 IKW40N60H3
Highspeedswitchingseriesthirdgeneration

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA 600 - - V
VGE=15.0V,IC=40.0A
Tvj=25°C - 1.95 2.40
Collector-emitter saturation voltage VCEsat V
Tvj=125°C - 2.30 -
Tvj=175°C - 2.50 -
VGE=0V,IF=20.0A
Tvj=25°C - 1.65 2.05
Diode forward voltage VF V
Tvj=125°C - 1.67 -
Tvj=175°C - 1.65 -
Gate-emitter threshold voltage VGE(th) IC=0.58mA,VCE=VGE 4.1 5.1 5.7 V
VCE=600V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 40.0 µA
Tvj=175°C - - 3000.0
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=40.0A - 24.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 2190 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 112 - pF
Reverse transfer capacitance Cres - 64 -
VCC=480V,IC=40.0A,
Gate charge QG - 223.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case
Short circuit collector current VGE=15.0V,VCC≤400V,
Max. 1000 short circuits IC(SC) tSC≤5µs - - A
Time between short circuits: ≥ 1.0s Tvj=150°C 235

5 Rev.2.4,2014-03-12
 IKW40N60H3
Highspeedswitchingseriesthirdgeneration

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 19 - ns
Rise time tr VCC=400V,IC=40.0A, - 33 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=7.9Ω,Lσ=90nH, - 197 - ns
Fall time tf Cσ=60pF - 21 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 1.10 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.58 - mJ
Total switching energy Ets - 1.68 - mJ

Diode reverse recovery time trr Tvj=25°C, - 124 - ns

Diode reverse recovery charge Qrr VR=400V, - 0.81 - µC
IF=20.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs - 13.6 - A
Diode peak rate of fall of reverse
dirr/dt - -332 - A/µs
recoverycurrentduringtb

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) Tvj=175°C, - 19 - ns
Rise time tr VCC=400V,IC=40.0A, - 29 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=7.9Ω,Lσ=90nH, - 227 - ns
Fall time tf Cσ=60pF - 22 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 1.33 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.79 - mJ
Total switching energy Ets - 2.12 - mJ

Diode reverse recovery time trr Tvj=175°C, - 190 - ns

Diode reverse recovery charge Qrr VR=400V, - 1.70 - µC
IF=20.0A,
Diode peak reverse recovery current Irrm diF/dt=1000A/µs - 18.5 - A
Diode peak rate of fall of reverse
dirr/dt - -290 - A/µs
recoverycurrentduringtb

6 Rev.2.4,2014-03-12
 IKW40N60H3
Highspeedswitchingseriesthirdgeneration

120

100

100
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
80
tp=1µs
10
10µs
60 50µs

100µs

40 200µs
1
TC=80° 500µs
TC=110° DC
20
TC=80°

TC=110°

0 0.1
1 10 100 1000 1 10 100 1000
f,SWITCHINGFREQUENCY[kHz] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching Figure 2. Forwardbiassafeoperatingarea
frequency (D=0,TC=25°C,Tj≤175°C;VGE=15V)
(Tj≤175°C,D=0.5,VCE=400V,VGE=15/0V,
rG=7,9Ω)

325 80

300
70
275

250
60
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]

225

200 50

175
40
150

125 30

100
20
75

50
10
25

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase Figure 4. Collectorcurrentasafunctionofcase
temperature temperature
(Tj≤175°C) (VGE≥15V,Tj≤175°C)

7 Rev.2.4,2014-03-12
 IKW40N60H3
Highspeedswitchingseriesthirdgeneration

160 120

140 VGE=21V VGE=21V

100
19V 19V
120
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
17V 17V

15V 80 15V
100
13V 13V

11V 11V
80 60
9V 9V

60 7V 7V
40
5V 5V
40

20
20

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaloutputcharacteristic
(Tj=25°C) (Tj=175°C)

140 4.0
Tj=25°C IC=20A
Tj=175°C IC=40A
VCE(sat),COLLECTOR-EMITTERSATURATION[V]

IC=80A
120
3.5
IC,COLLECTORCURRENT[A]

100
3.0

80

2.5

60

2.0
40

1.5
20

0 1.0
5 6 7 8 9 10 11 12 0 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic Figure 8. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)

8 Rev.2.4,2014-03-12
 IKW40N60H3
Highspeedswitchingseriesthirdgeneration

td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
100

100

10 10
10 20 30 40 50 60 70 80 0 5 10 15 20 25
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V, (ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=7,9Ω,testcircuitinFig.E) IC=40A,testcircuitinFig.E)

6.0
typ.
min.
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

5.5 max.

td(off)
tf 5.0
td(on)
t,SWITCHINGTIMES[ns]

100 tr
4.5

4.0

3.5

3.0

2.5

10 2.0
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C] Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof Figure 12. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(ind.load,VCE=400V,VGE=15/0V,IC=40A, (IC=0.58mA)
rG=7,9Ω,testcircuitinFig.E)
9 Rev.2.4,2014-03-12
 IKW40N60H3
Highspeedswitchingseriesthirdgeneration

6 4.0
Eoff Eoff
Eon Eon
Ets 3.5 Ets
5
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
3.0

4
2.5

3 2.0

1.5
2

1.0

1
0.5

0 0.0
10 20 30 40 50 60 70 80 0 5 10 15 20 25
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V, (ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=7,9Ω,testcircuitinFig.E) IC=40A,testcircuitinFig.E)

2.5 3.0
Eoff Eoff
Eon Eon
Ets Ets
2.5
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

2.0

2.0

1.5

1.5

1.0

1.0

0.5
0.5

0.0 0.0
25 50 75 100 125 150 175 200 250 300 350 400 450
Tj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(indload,VCE=400V,VGE=15/0V,IC=40A, (ind.load,Tj=175°C,VGE=15/0V,IC=40A,
rG=7,9Ω,testcircuitinFig.E) rG=7,9Ω,testcircuitinFig.E)
10 Rev.2.4,2014-03-12
 IKW40N60H3
Highspeedswitchingseriesthirdgeneration

16
120V
480V
14
VGE,GATE-EMITTERVOLTAGE[V]

1000
12
Cies
Coes

C,CAPACITANCE[pF]
Cres
10

6 100

0 10
0 50 100 150 200 250 0 10 20 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge Figure 18. Typicalcapacitanceasafunctionof
(IC=40A) collector-emittervoltage
(VGE=0V,f=1MHz)

560 15

520
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]

tSC,SHORTCIRCUITWITHSTANDTIME[µs]

480
12
440

400

9
360

320

280
6

240

200
3
160

120

80 0
10 12 14 16 18 20 10 11 12 13 14 15
VGE,GATE-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa Figure 20. Shortcircuitwithstandtimeasafunctionof
functionofgate-emittervoltage gate-emittervoltage
(VCE≤400V,startatTj=25°C) (VCE≤400V,startatTj≤150°C)

11 Rev.2.4,2014-03-12
 IKW40N60H3
Highspeedswitchingseriesthirdgeneration

1
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
D=0.5 D=0.5
0.1 0.2 0.2
0.1 0.1
0.05 0.1 0.05
0.02 0.02
0.01 0.01
single pulse single pulse

0.01
0.01

i: 1 2 3 4 5 i: 1 2 3 4
ri[K/W]: 0.02540725 0.09179841 0.1302573 0.1893012 0.0532358 ri[K/W]: 0.3399738 0.4445632 0.5814618 0.1348257
τi[s]: 1.3E-5 1.3E-4 1.4E-3 0.01830399 0.1308576 τi[s]: 1.3E-4 1.5E-3 0.01821425 0.09207449

0.001 0.001
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 21. IGBTtransientthermalimpedance Figure 22. Diodetransientthermalimpedanceasa
(D=tp/T) functionofpulsewidth
(D=tp/T)

250 2.5
Tj=25°C, IF = 40A Tj=25°C, IF = 40A
Tj=175°C, IF = 40A Tj=175°C, IF = 40A
225
Qrr,REVERSERECOVERYCHARGE[µC]

2.0
trr,REVERSERECOVERYTIME[ns]

200

175
1.5

150

1.0
125

100
0.5

75

50 0.0
800 1000 1200 1400 1600 800 1000 1200 1400 1600
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverytimeasafunction Figure 24. Typicalreverserecoverychargeasa
ofdiodecurrentslope functionofdiodecurrentslope
(VR=400V) (VR=400V)

12 Rev.2.4,2014-03-12
 IKW40N60H3
Highspeedswitchingseriesthirdgeneration

24 0
Tj=25°C, IF = 40A Tj=25°C, IF = 40A
Tj=175°C, IF = 40A Tj=175°C, IF = 40A
22
Irr,REVERSERECOVERYCURRENT[A]

dIrr/dt,diodepeakrateoffallofIrr[A/µs]
20 -200

18

16 -400

14

12 -600

10

8 -800
800 1000 1200 1400 1600 800 1000 1200 1400 1600
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 25. Typicalreverserecoverycurrentasa Figure 26. Typicaldiodepeakrateoffallofreverse
functionofdiodecurrentslope recoverycurrentasafunctionofdiode
(VR=400V) currentslope
(VR=400V)

60 2.50
Tj=25°C IF=10A
Tj=175°C IF=20A
IF=40A
50 2.25
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]

40 2.00

30 1.75

20 1.50

10 1.25

0 1.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 27. Typicaldiodeforwardcurrentasafunction Figure 28. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature

13 Rev.2.4,2014-03-12
 IKW40N60H3
Highspeedswitchingseriesthirdgeneration

PG-TO247-3

14 Rev.2.4,2014-03-12
 IKW40N60H3
Highspeedswitchingseriesthirdgeneration

vGE(t)
90% VGE
a b

a b

t
iC(t)

90% IC
90% IC

10% IC 10% IC
t

vCE(t)

td(off) tf td(on) tr
t

vGE(t)
90% VGE

10% VGE
t
iC(t)

2% IC
t

vCE(t)

2% VCE
t1 t2 t3 t4
t

15 Rev.2.4,2014-03-12
 IKW40N60H3
Highspeedswitchingseriesthirdgeneration

RevisionHistory
IKW40N60H3

Revision:2014-03-12,Rev.2.4
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2010-06-14 Release of final datasheet
2.2 2010-10-14 Updated IGBT switching conditions
2.3 2013-12-10 New value ICES max limit at 175°C
2.4 2014-03-12 Max ratings Vce, Tvj ≥ 25°C

WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?
Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument.
Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com

Publishedby
InfineonTechnologiesAG
81726Munich,Germany
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.

LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.
Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,
includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

Information
Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon
TechnologiesOffice(www.infineon.com).

Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin
question,pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon
Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain
and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.

16 Rev.2.4,2014-03-12