SEMICONDUCTOR KHB2D0N60P/F/F2

N CHANNEL MOS FIELD

TECHNICAL DATA EFFECT TRANSISTOR

General Description
KHB2D0N60P
A
O
This planar stripe MOSFET has better characteristics, such as fast C
F
switching time, low on resistance, low gate charge and excellent
E G DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for switching mode B
A _ 0.2
9.9 +
B 15.95 MAX
power supplies. Q C 1.3+0.1/-0.05
I D _ 0.1
0.8 +
E _ 0.2
3.6 +
K P F 2.8 +_ 0.1
FEATURES M G 3.7
L
H 0.5+0.1/-0.05
VDSS= 600V, ID= 2.0A J I 1.5
D J 13.08 +_ 0.3
Drain-Source ON Resistance : H 1.46
N N K
www.DataSheet4U.com _ 0.1
RDS(ON)=5.0 @VGS = 10V L 1.4 +
M _ 0.1
1.27 +
Qg(typ.) = 10.9nC N _ 0.2
2.54 +
O _ 0.2
4.5 +
1 2 3 P 2.4 +_ 0.2
1. GATE
2. DRAIN Q _ 0.2
9.2 +
MAXIMUM RATING (Tc=25 ) 3. SOURCE

RATING
TO-220AB
CHARACTERISTIC SYMBOL KHB2D0N60F UNIT
KHB2D0N60P
KHB2D0N60F2
KHB2D0N60F
Drain-Source Voltage VDSS 600 V A C

F
Gate-Source Voltage VGSS 30 V

O
E DIM MILLIMETERS
@TC=25 2.0 2.0*

B
A _ 0.2
10.16 +

G
ID B _ 0.2
15.87 +
Drain Current @TC=100 1.2 1.2* A C 2.54 +_ 0.2
D _ 0.1
0.8 +
IDP E _ 0.1
3.18 +
Pulsed (Note1) 8.0 8.0*
K

F _ 0.1
3.3 +
G _ 0.2
12.57 +
Single Pulsed Avalanche Energy EAS L
120 mJ M
R H _ 0.1
0.5 +
(Note 2) J J 13.0 MAX
K _ 0.1
3.23 +
Repetitive Avalanche Energy EAR D
5.4 mJ L 1.47 MAX
(Note 1) M 1.47 MAX
N N H
N 2.54 +_ 0.2
Peak Diode Recovery dv/dt
dv/dt 5.5 V/ns O _ 0.2
6.68 +
(Note 3) Q _ 0.2
4.7 +
R _ 0.2
2.76 +
Q

1 2 3
Drain Power Tc=25 54 23 W
PD 1. GATE
2. DRAIN
Dissipation Derate above25 0.43 0.18 W/ 3. SOURCE

Maximum Junction Temperature Tj 150 TO-220IS (1)

Storage Temperature Range Tstg -55 150
KHB2D0N60F2
Thermal Characteristics
A C
Thermal Resistance, Junction-to-Case RthJC 2.32 5.5 /W
F

S
P

Thermal Resistance, Case-to-Sink RthCS 0.5 - /W E DIM MILLIMETERS

A _ 0.3
10.0 +
B

Thermal Resistance, Junction-to- B _ 0.3

G

15.0 +
RthJA 62.5 62.5 /W C _ 0.3
2.70 +
Ambient D 0.76+0.09/-0.05
E Φ3.2 + _ 0.2
* : Drain current limited by maximum junction temperature. L L F _ 0.3
3.0 +
K

R
G _
12.0 + 0.3
PIN CONNECTION M H 0.5+0.1/-0.05
J

D D J _ 0.5
13.6 +
D K _ 0.2
3.7 +
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N N H N _ 0.1
2.54 +
P _ 0.1
6.8 +
Q _
4.5 + 0.2
R _ 0.2
2.6 +
0.5 Typ
Q

1 2 3 S
G 1. GATE
2. DRAIN
3. SOURCE

S TO-220IS

2007. 5. 10 Revision No : 0 1/7

 KHB2D0N60P/F/F2

ELECTRICAL CHARACTERISTICS (Tc=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.65 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
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Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.0A - 3.8 5.0
Dynamic
Total Gate Charge Qg - 10.9 12
VDS=480V, ID=2.0A
Gate-Source Charge Qgs - 1.7 3 nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 5.0 5.5
Turn-on Delay time td(on) - - 28
VDD=300V
Turn-on Rise time tr - - 60
RL=150 ns
Turn-off Delay time td(off) - - 58
RG=25 (Note4,5)
Turn-off Fall time tf - - 66
Input Capacitance Ciss - 388 504
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1.0MHz - 6.5 8.5 pF
Output Capacitance Coss - 46 59.4
Source-Drain Diode Ratings
Continuous Source Current IS - - 2.0
VGS<Vth A
Pulsed Source Current ISP - - 8.0
Diode Forward Voltage VSD IS=2.0A, VGS=0V - - 1.5 V
Reverse Recovery Time trr IS=2.0A, VGS=0V, - 300 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 1.55 - C

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L = 36.9mH, IS= 2.0A, VDD=50V, RG=25 , Starting Tj = 25 .
Note 3) IS 2.0A, dI/dt 300A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.

2007. 5. 10 Revision No : 0 2/7

 KHB2D0N60P/F/F2

Fig1. ID - VDS Fig2. ID - VGS

1
10 VGS
TOP : 15.0 V
10.0 V
8.0 V
Drain Current ID (A)

Drain Current ID (A)

7.0 V
6.0 V
0 5.5 V
10 5.0 V
Bottom : 4.5V 0
10
150 C
-1
10
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25 C -55 C

-2 -1
10 10
-1 0 1
10 10 10 2 4 6 8 10

Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)

Fig3. BVDSS - Tj Fig4. RDS(ON) - ID

Normalized Breakdown Voltage BVDSS

1.2 12
VGS = 0V
On - Resistance RDS(ON) (Ω)

IDS = 250
10
1.1
8
VGS = 10V

1.0 6 VGS = 20V

4
0.9
2

0.8 0
-100 -50 0 50 100 150 0 1 2 3 4 5

Junction Temperature Tj ( C ) Drain Current ID (A)

Fig5. IS - VSD Fig6. RDS(ON) - Tj

1
10 2.5
VGS = 10V
Reverse Drain Current IS (A)

IDS = 2.0A
Normalized On Resistance

2.0

1.5
0
10
1.0

0.5
150 C 25 C

-1
10 0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -100 -50 0 50 100 150

Source - Drain Voltage VSD (V) Junction Temperture Tj ( C )

2007. 5. 10 Revision No : 0 3/7

 KHB2D0N60P/F/F2

Fig7. C - VDS Fig8. Qg - VGS

700 12
ID=2.0A
Frequency = 1MHz

Gate - Source Voltage VGS (V)

600 VDS = 120V
10
Ciss VDS = 300V
Capacitance (pF)

500
8 VDS = 480V
400 Coss
6
300
4
200
www.DataSheet4U.com Crss
2
100

0 0
10-1 100 101 0 2 4 6 8 10

Drain - Source Voltage VDS (V) Gate - Charge Qg (nC)

Fig9. Safe Operation Area Fig10. Safe Operation Area

(KHB2D0N60P) (KHB2D0N60F,KHB2D0N60F2)
Operation in this Operation in this
area is limited by RDS(ON) area is limited by RDS(ON)
101 101
Drain Current ID (A)
Drain Current ID (A)

100 µs
100µs
1µs
10 µs
0 0
10 1µs 10 100 µs

10µs DC

10-1 DC 10-1
Tc= 25 C Tc= 25 C
Tj = 150 C Tj = 150 C
Single nonrepetitive pulse Single nonrepetitive pulse
10-2 10-2
100 101 102 103 100 101 102 103

Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V)

Fig11. ID - Tj
2.0

1.6
Drain Current ID (A)

1.2

0.8

0.4

0.0
25 50 75 100 125 150

Junction Temperature Tj ( C )

2007. 5. 10 Revision No : 0 4/7

 KHB2D0N60P/F/F2

Fig12. Transient Thermal Response Curve

Normalized Transient Thermal Resistance

100

Duty=0.5

0.2
PDM
10-1 0.1
www.DataSheet4U.com t1
0.05
0.02 t2
0.01
Single Pulse - Duty Factor, D= t1/t2
10-2
10-5 10-4 10-3 10-2 10-1 100 101

TIME (sec)

Fig13. Transient Thermal Response Curve

Normalized Transient Thermal Resistance

100

Duty=0.5

0.2

10-1 0.1
PDM
t1
0.05
t2
0.02

0.01 Single Pulse - Duty Factor, D= t1/t2

10-2
10-5 10-4 10-3 10-2 10-1 100 101

TIME (sec)

2007. 5. 10 Revision No : 0 5/7

 KHB2D0N60P/F/F2

Fig14. Gate Charge

VGS

10 V
Fast
Recovery
ID Diode

0.8 VDSS
ID
www.DataSheet4U.com 1.0 mA
Q
VDS Qgs Qgd
Qg
VGS

Fig15. Single Pulsed Avalanche Energy

1 BVDSS
EAS= LIAS2
2 BVDSS - VDD

BVDSS
L
IAS
0.5 VDSS

25Ω
VDS ID(t)

VGS VDD VDS(t)

10 V

Time
tp
Fig16. Resistive Load Switching

VDS
90%

RL

0.5 VDSS VGS 10%

td(off)
25 Ω td(on) tr
VDS tf

ton toff
VGS
10V

2007. 5. 10 Revision No : 0 6/7

 KHB2D0N60P/F/F2

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

DUT Body Diode Forword Current

VDS
ISD
IF (DUT) di/dt

IRM
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IS
Body Diode Reverse Current

0.8 VDSS
VDS Body Diode Recovery dv/dt
(DUT)
driver VSD
VDD

10V VGS
Body Diode Forword Voltage drop

2007. 5. 10 Revision No : 0 7/7