SEMICONDUCTOR KTN2222S/AS

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.
E
L B L
FEATURES DIM MILLIMETERS
・Low Leakage Current A 2.93 +_ 0.20
B 1.30+0.20/-0.15
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. C 1.30 MAX

D
2 3 D 0.40+0.15/-0.05
・Low Saturation Voltage

G
E 2.40+0.30/-0.20

H
1 G 1.90
: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.
H 0.95
・Complementary to the KTN2907S/2907AS. J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
・Suffix U : Qualified to AEC-Q101. P P
L 0.55
M 0.20 MIN
ex) KTN2222AS-RTK/HU N 1.00+0.20/-0.10

N
P 7

J
Q 0.1 MAX
M

K
℃)
MAXIMUM RATING (Ta=25℃ 1. EMITTER

RATING 2. BASE
CHARACTERISTIC SYMBOL UNIT 3. COLLECTOR
KTN2222S KTN2222AS
Collector-Base Voltage VCBO 60 75 V
Collector-Emitter Voltage VCEO 30 40 V SOT-23
Emitter-Base Voltage VEBO 5 6 V
Collector Current IC 600 mA
Collector Power Dissipation
PC 350 mW
(Ta=25℃)
Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55～150 ℃
Note : PC* : Package Mounted on 99.5% alumina 10×8×0.6mm.

Marking
Type Name Lot No. Lot No.

ZB Type Name
ZG

MARK SPEC
TYPE MARK
KTN2222S Z B
KTN2222AS Z G

2020. 02. 10 Revision No : 3 1/5

This datasheet has been downloaded from http://www.digchip.com at this page

 KTN2222S/AS

℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current KTN2222AS ICEX VCE=60V, VEB(OFF)=3V - - 10 nA
KTN2222S VCB=50V, IE=0 - - 0.01
Collector Cut-off Current ICBO μA
KTN2222AS VCB=60V, IE=0 - - 0.01
Emitter Cut-off Current KTN2222AS IEBO VEB=3V, IC=0 - - 10 nA

Collector-Base KTN2222S 60 - -
V(BR)CBO IC=10μA, IE=0 V
Breakdown Voltage KTN2222AS 75 - -

Collector-Emitter * KTN2222S 30 - -
V(BR)CEO IE=10mA, IB=0
Breakdown Voltage KTN2222AS V
40 - -

Emitter-Base KTN2222S 5 - -
V(BR)EBO IE=10μA, IC=0
Breakdown Voltage KTN2222AS 6 - - V

hFE(1) IC=0.1mA, VCE=10V 35 - -

KTN2222S hFE(2) IC=1mA, VCE=10V 50 - -

KTN2222AS hFE(3) IC=10mA, VCE=10V 75 - -
DC Current Gain *
hFE(4) IC=150mA, VCE=10V 100 - 300
KTN2222S 30 - -
hFE(5) IC=500mA, VCE=10V
KTN2222AS 40 - -
KTN2222S - - 0.4
VCE(sat)1 IC=150mA, IB=15mA
Collector-Emitter * KTN2222AS - - 0.3
V
Saturation Voltage KTN2222S - - 1.6
VCE(sat)2 IC=500mA, IB=50mA
KTN2222AS - - 1
KTN2222S - - 1.3
VBE(sat)1 IC=150mA, IB=15mA
Base-Emitter * KTN2222AS 0.6 - 1.2
V
Saturation Voltage KTN2222S - - 2.6
VBE(sat)2 IC=500mA, IB=50mA
KTN2222AS - - 2.0
KTN2222S VCE=20V, IC=20mA, 250 - -
Transition Frequency fT MHz
KTN2222AS f=100MHz 300 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz - - 8 pF
KTN2222S - - 30
Input Capacitance Cib VEB=0.5V, IC=0, f=1.0MHz pF
KTN2222AS - - 25
* Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%.

2020. 02. 10 Revision No : 3 2/5

 KTN2222S/AS

℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
IC=1mA, VCE=10V, f=1kHz 2 - 8
Input Impedance KTN2222AS hie kΩ
IC=10mA, VCE=10V, f=1kHz 0.25 - 1.25
IC=1mA, VCE=10V, f=1kHz - - 8
Voltage Feedback Ratio KTN2222AS hre x10-4
IC=10mA, VCE=10V, f=1kHz - - 4
IC=1mA, VCE=10V, f=1kHz 50 - 300
Small-Singal Current Gain KTN2222AS hfe
IC=10mA, VCE=10V, f=1kHz 75 - 375
IC=1mA, VCE=10V, f=1kHz 5 - 35
hoe Ω
Collector Output Admittance KTN2222AS μ
IC=10mA, VCE=10V, f=1kHz 25 - 200
Collector-Base Time Constant KTN2222AS Cc・rbb’ IE=20mA, VCB=20V, f=31.8MHz - - 150 pS
IC=100μA, VCE=10V,
Noise Figure KTN2222AS NF - - 4 dB
Rg=1kΩ, f=1kHz
Delay Time td VCC=30V, VBE(OFF)=0.5V - - 10
Rise Time tr IC=150mA, IB1=15mA - - 25
Switching Time nS
Storage Time tstg VCC=30V, IC=150mA - - 225
Fall Time tf IB1=-IB2=15mA - - 60

2020. 02. 10 Revision No : 3 3/5

 KTN2222S/AS

I C - V CE h FE - I C
1000 1K
COMMON EMITTER VCE =10V
COLLECTOR CURRENT I C (mA)

Ta=25 C
500
800

DC CURRENT GAIN h FE
20mA 16mA 300
18mA 14mA Ta=75 C
12mA Ta=25 C
600 10mA Ta=-25 C
8mA
6mA 100 VCE =1V
4mA VCE =2V
400
I B =2mA 50
30
200

10
0 0.4 0.8 1.2 1.6 1.8 0.5 1 3 10 30 100 300 1K

COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)

VCE(sat) - I C VBE(sat) - I C
1.6
COLLECTOR-EMITTER SATURATION

0.6
COMMON EMITTER COMMON EMITTER
BASE-EMITTER SATURATION

I C /I B =10 I C /I B =10
1.4
Ta=25 C
VOLTAGE VCE(sat) (V)

VOLTAGE VBE(sat) (V)

1.2
VBE(sat)
0.4
1.0
Ta=-25 C
0.8
Ta=25 C
0.6
0.2 Ta=75 C
0.4
VCE(sat) 0.2
0 0
0.5 1 3 10 30 100 300 1k 0.5 1 3 10 30 100 300 1k
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)

I C - V BE fT - IC
500 1000
TRANSITION FREQUENCY f T (MHz)

COMMON EMITTER Ta=25 C

300 VCE =10V VCE =10V
COLLECTOR CURRENT I C (mA)

100 300

30
Ta=75 C 100
10

3
C
25

30
Ta=

Ta=-25 C
1

0.3 10
1 3 10 30 100 300 1k 3k
0.1
0.05 COLLECTOR CURRENT I C (mA)
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

BASE-EMITTER VOLTAGE VBE (V)

2020. 02. 10 Revision No : 3 4/5

 KTN2222S/AS

Cob - V CB Pc - Ta
COLLECTOR OUTPUT CAPACITANCE Cob (pF)

Cib - V EB
COLLECTOR INPUT CAPACITANCE Cib (pF)

100 500

COLLECTOR POWER DISSIPATION

COMMON EMITTER (1) MOUNTED ON
f=1MHz, Ta=25 C 99.5% ALUMINA
400 10x8x0.6mm
30 (1) (2) Ta=25 C

300

PC (mW)
Cib
10
200
(2)
Cob
3.0
100

1.0 0
0.1 1.0 10 100 300 0 25 50 75 100 125 150 175

COLLECTOR-BASE VOLTAGE VCB (V) AMBIENT TEMPERATURE Ta ( C)

EMITTER-BASE VOLTAGE VEB (V)

2020. 02. 10 Revision No : 3 5/5