SEMICONDUCTOR KN2222S/AS

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Low Leakage Current A _ 0.20
2.93 +
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. B 1.30+0.20/-0.15
C 1.30 MAX

D
Low Saturation Voltage 2 3 D 0.45+0.15/-0.05

G
E 2.40+0.30/-0.20
: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.

H
1 G 1.90
Complementary to the KN2907S/2907AS. H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
L 0.55
P P
M 0.20 MIN
N 1.00+0.20/-0.10

N
C
P 7

J
MAXIMUM RATING (Ta=25 )
M

K
RATING
CHARACTERISTIC SYMBOL UNIT
KN2222S KN2222AS 1. EMITTER
2. BASE
Collector-Base Voltage VCBO 60 75 V
3. COLLECTOR

Collector-Emitter Voltage VCEO 30 40 V

Emitter-Base Voltage VEBO 5 6 V
Collector Current IC 600 mA
SOT-23

Collector Power Dissipation PC 150

mW
(Ta=25 ) PC * 350
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )

Marking
Type Name Lot No. Lot No.

ZBA Type Name

ZGA

MARK SPEC
TYPE MARK
KN2222S ZBA
KN2222AS ZGA

1999. 9. 30 Revision No : 2 1/3

 KN2222S/AS

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current KN2222AS ICEX VCE=60V, VEB(OFF)=3V - - 10 nA
KN2222S VCB=50V, IE=0 - - 10
Collector Cut-off Current ICBO nA
KN2222AS VCB=60V, IE=0 - - 10
Emitter Cut-off Current KN2222AS/S IEBO VEB=3V, IC=0 - - 10 nA

Collector-Base KN2222S 60 - -
V(BR)CBO IC=10 A, IE=0 V
Breakdown Voltage KN2222AS 75 - -

Collector-Emitter * KN2222S 30 - -
V(BR)CEO IE=10mA, IB=0 V
Breakdown Voltage KN2222AS 40 - -

Emitter-Base KN2222S 5 - -
V(BR)EBO IE=10 A, IC=0 V
Breakdown Voltage KN2222AS 6 - -
hFE(1) IC=0.1mA, VCE=10V 35 - -

KN2222S hFE(2) IC=1mA, VCE=10V 50 - -

KN2222AS hFE(3) VCE=10mA, VCE=10V 75 - -
DC Current Gain *
hFE(4) IC=150mA, VCE=10V 100 - 300
KN2222S 30 - -
hFE(5) IC=150mA, VCE=10V
KN2222AS 40 - -
KN2222S - - 0.4
VCE(sat)1 IC=150mA, IB=15mA
Collector-Emitter * KN2222AS - - 0.3
V
Saturation Voltage KN2222S - - 1.6
VCE(sat)2 IC=500mA, IB=50mA
KN2222AS - - 1.0
KN2222S - - 1.3
VBE(sat)1 IC=150mA, IB=15mA
Base-Emitter * KN2222AS 0.6 - 1.2
V
Saturation Voltage KN2222S - - 2.6
VBE(sat)2 IC=500mA, IB=50mA
KN2222AS - - 2.0
KN2222S IC=20mA, VCE=20V, 250 - -
Transition Frequency fT MHz
KN2222AS f=100MHz 300 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz - - 8 pF

* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.

1999. 9. 30 Revision No : 2 2/3

 KN2222S/AS

h FE - I C C ob - V CB
1k 12
VCE =10V I E =0
f=1MHz
500 10

CAPACITANCE C ob (pF)
DC CURRENT GAIN h FE

300
8

100 6

50 4
30
2

10 0
1 3 10 30 100 300 1k 1 3 10 30 100 200

COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE VCB (V)

V BE(sat) , V CE(sat) - I C Pc - Ta
10 500
COLLECTOR POWER DISSIPATION

I C /I B =10 1 MOUNTED ON 99.5%

5
AIUMINA 10x8x0.6mm
SATURATION VOLTAGE

3 400 2 Ta=25 C
VBE(sat) ,VCE(sat) (V)

1
VBE(sat)
1
PC (mW)

300
0.5
0.3
200
2
0.1
VCE(sat)
0.05 100
0.03

0.01 0
1 3 10 30 100 300 1k 0 25 50 75 100 125 150 175

COLLECTOR CURRENT I C (mA) AMBIENT TEMPERATURE Ta ( C)

1999. 9. 30 Revision No : 2 3/3