Aluminum is not used as a p-type dopant because it has three important properties that

make it less desirable than boron. The three things to consider are:

 The dopant activation energy - the thermal energy that it takes for the
dopant to trap an electron from the valence band (and thus create a free
hole). The number for boron is 0.045 and for aluminum it is 0.067.
Aluminum is worse, but not so much that it would be unsuitable.
 The solid solubility of the dopant in silicon - This is the maximum
doping that can be achieved before the dopant starts segregating into
clumps that are not electrically active. Boron has a solid solubility of more
than 1E20 while Aluminum is at 1E19 for typical annealing temperatures.
The one order of magnitude makes a significant difference in the formation
of p-type ohmic contacts. The larger this number the lower the contact
resistance.
 The diffusivity of the dopant in silicon - This is the speed with which
dopant moves in the semiconductor at elevated temperature. Lifetime of
semiconductor circuits depends on this number, the lower the better. How
shallow a junction one can make also depends on this number and the
solubility above, again, the lower the better. Boron has a diffusivity that is 5
times lower than aluminum at any given temperature.