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Tunable electronic properties of an Sb/InSe van

der Waals heterostructure by electric field effects†
Cite this: DOI: 10.1039/c8cp07407k
Zhihui Zhang,‡a Yan Zhang,‡a Zifeng Xie,a Xing Wei,a Tingting Guo,a Jibin Fan,a
Lei Ni,a Ye Tian,b Jian Liu c and Li Duan *a

Received 3rd December 2018,
Accepted 11th February 2019
DOI: 10.1039/c8cp07407k
rsc.li/pccp
The electronic properties of an Sb/InSe heterostructure are investigated by using the density functional
theory method. A type-II staggered-gap band alignment is achieved from the Sb/InSe vdW
heterostructure with the Sb layer dominates the lowest energy holes as well as the lowest energy
electrons are contributed by the InSe layer, which facilitates the spatial effective separation of
photogenerated electron–hole pairs. Additionally, an indirect–direct band gap transition can be triggered
via varying the interlayer distance. More fascinatingly, the characteristic of type-II band alignment is
robust, while the band gap values are tunable with respect to a moderate external electric field, even
leading to an intriguing semiconductor–metal transition at a strong electric field. These results are
expected to provide meaningful guidelines for the design of novel nanoelectronic and optoelectronic
devices based on the Sb/InSe heterostructure.

1. Introduction and X-ray photoelectron spectroscopy.14 Most importantly, the

Successful fabrication of graphene has triggered a research boom
in exploring diverse types of atomically thin two-dimensional
(2D) materials.1 A multitude of 2D materials, such as black
phosphorene, transition metal dichalcogenides (TMDs), fluorogra-
phene, g-GaN and so on, have displayed fascinating application
in next-generation photovoltaic devices owing to their out-
standing photoelectric properties, which have been extensively
researched.2–7 More recently, a group-VA elemental 2D material
antimonene (Sb monolayer) has attracted tremendous attention
since it exhibits many advantages including high stability,8 fast
carrier mobility (me B 630 and mh B 1737 cm2 V1 s1) and good
thermal conductivity as well as a high electrical conductivity of
104 S m1,9,10 which make it a promising material for designing
field effect transistors (FETs) and thermophotovoltaic cells.11
Besides, both experimental and theoretical studies have reported
that the stable Sb monolayer with a b-phase structure consists of
Sb atoms puckered in a honeycomb lattice and has an indirect
band gap.12,13 Simultaneously, a newly emerging 2D layered
semiconductor, ultrathin indium selenide (InSe), has been
successfully prepared in experiment. Nan et al. have demonstrated
the air-stability of InSe nanosheets via microphotoluminescence
a
School of Materials Science and Engineering, Chang’an University, Xi’an, 710064,
China. E-mail: liduan@chd.edu.cn
b
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
c
School of Physics, Shandong University, Jinan 250100, China
† Electronic supplementary information (ESI) available. See DOI: 10.1039/c8cp07407k
‡ These two authors equally contributed to this work.
electron mobility of InSe can reach 103 cm2 V1 s1 and
104 cm2 V1 s1 at room and liquid-helium temperatures,15
respectively, and an excellent current on/off ratio of 108 in the
InSe-based FET has been achieved as well,16 indicating its great
potential in nanoelectronic applications.
In parallel with the efforts devoted to individual 2D materials,
the van der Waals (vdW) heterostructures manufactured by
vertically stacking different 2D semiconductors have opened
up new avenues for developing new materials and designing
new devices.17 In such heterostructures, the relatively weak vdW
interaction holds the stacking layers together and is expected to
serve as a degree of freedom to produce novel electronic properties,
and strong covalent bonds inside respective monolayers assure
in-plane stability. This practice has been testified in TMD/ZnO,
SiC/MoS2, graphene/CH3NH3PbI3, and g-GaN/blue phosphorene
heterostructures.4,5,18,19 Along with this advance, in sight of the
prominent properties of Sb and InSe semiconductors, recently,
both InSe-based and Sb-based vdW heterostructures such as
InSe/BP,20,21 InSe/MoS2,22 antimonene/graphene and C2N/Sb
have been constructed,23–25 which are considered as potential
candidates for high-performance electronic and optoelectronic
devices. On the one hand, there is an extraordinarily perfect
lattice match between Sb and InSe monolayers, which means it
is extremely feasible to construct an Sb/InSe vdW heterostructure
in the experiment. On the other hand, their combination is
expected to improve the transport properties of carriers in the
Sb/InSe heterostructure because of the high electron mobility
of InSe and high hole mobility of Sb. Hence, the exploration
of the fundamental electronic properties of the Sb/InSe vdW

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heterostructure is especially significant for applications in
electronics and optoelectronics.
Nevertheless, so far few reports have focused on the electro-
nic properties of the Sb/InSe heterostructure with an external
electric field. In this article, electronic structure tuning in a
novel Sb/InSe vdW heterostructure is discussed for the first
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time by stacking single layer Sb vertically on the InSe sheet. It is
demonstrated that the Sb/InSe vdW heterostructure exhibits
type-II band alignment with electrons and holes respectively
localized in the InSe and Sb layers. In addition, an electric field
is applied along the z direction as an effective way to tune the
electronic properties. The band gap of the heterostructure can
be significantly modulated by the electric field. Also, the
number of transferring electrons increases with the enhanced
strength of the applied external electric field, no matter what
the direction of the electric field is. The present study may
inspire much interest in experimental research of the Sb/InSe
vdW heterostructure and would open a new avenue for application
of the heterostructure in future nanoelectronics.
2. Computational methods
In our work, all the structural relaxation and electronic calculations
were accomplished using ultrasoft pseudopotential by first-
principles calculations based on DFT as implemented in the
CASTEP code of Materials Studio.26 The generalized gradient
approximation (GGA) with the Perdew–Burke–Ernzerhof (PBE)
exchange–correlation functional was used to describe the
exchange–correlation interaction.27 A plane wave basis set with
a cutoff energy of 420 eV and a 5  5  1 k-point grid determined
by a good grid of the gamma-centered Monkhorst–Pack method
in the Brillouin zone was found to give great converged results.
Moreover, a vacuum thickness of 18 Å was chosen to prevent
artificial interactions in neighbouring sheets along the z direction.
Additionally, to take the long range vdW interaction into con-
sideration, the correction method of Grimme’s DFT-D was
employed due to the fact that the weak interactions are not well
Fig. 1 The top and side views of the Sb/InSe vdW heterostructure with various stackings: (a) pattern H1, (b) pattern H2, (c) pattern H3, and (d) pattern H4.
The brown, yellow and purple balls represent In, Se and Sb atoms, respectively.
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described by the standard PBE functional.28 For the geometry
optimization, the energy convergence criterion was set at 1 
105 eV per atom. The convergence criterion for the maximal
force between atoms was 0.03 eV Å1. The maximum displace-
ment and the stress on each atom were set at 0.001 Å and
0.05 GPa, respectively. The Heyd–Scuseria–Ernzerhof (HSE06)
hybrid functional was also adopted to check the validity of the
results obtained by the PBE method.29 Besides, spin–orbital-
coupling (SOC) was expected have a significant influence on the
heavy atoms therefore it was considered when calculating band
structures.30
3. Results and discussion
3.1 Geometric structure of the heterostructure
For the free-standing low-buckled InSe and Sb, the optimized
lattice constants are 4.06 Å and 4.09 Å, respectively, in good
agreement with previous results.31,32 A supercell was used to
model the Sb/InSe heterostructure, comprising 2  2 primitive
cells of InSe and 2  2 primitive cells of Sb, which induces a
lattice mismatch of around 0.8%, so that the Sb/InSe hetero-
structure could be easily obtained. To gain equilibrium geometry,
four representative stacking models are considered along the
horizontal direction, as presented in Fig. 1. The stacking composite
structures can transform into one another by horizontal lay sliding.
It is reported that the electronic properties of the InSe monolayer are
very sensitive to other external conditions, such as strain, thus we
keep the lattice parameters of the InSe monolayer fixed and stretch
the lattice parameters of the Sb layer.33 All configurations are under
geometric optimization with convergence criteria in terms of both
energy and force. The corresponding parameters and band gap
values of the four stacking patterns after optimization are listed in
Table 1. The vertical interlayer distances between InSe and Sb layers
vary from 2.88 Å to 3.03 Å. It is noted that there are no significant
changes in the In–In and the In–Se as well as the Sb–Sb bond
length in diverse configurations, suggesting the very small atom
rearrangements in the heterostructures. Interestingly, it is found
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Table 1 Calculated equilibrium interlayer distance d, binding energy
Eb, and bond lengths LIn–In, LIn–Se, and LSb–Sb as well as band gap Eg of
the Sb/InSe vdW heterostructure for four constructed patterns
Stacking d (Å) LIn–In (Å) LIn–Se (Å) LSb–Sb (Å) Eb (meV Å2) Eg (eV)
H1 3.00 2.80 2.66 2.87 21.76 0.636
H2 3.03 2.80 2.67 2.87 10.10 0.584
H3 2.88 2.84 2.67 2.86 23.86 0.650
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H4 2.96 2.84 2.68 2.86 22.66 0.657
that all considered structures exhibit direct band gaps with little
difference in gap values, which demonstrates that the band
structures of four different Sb/InSe stacking types are similar.
Binding energy is a necessary parameter reflecting the thermal
stability of the heterostructure. To quantitatively evaluate the
relative stability between the neighbouring layers, the interface
binding energy (Eb) of the Sb/InSe heterostructure is estimated as:
ESb=InSe  ESb  EInSe
Eb ¼ (1)
A the heterostructure with a distance of 2.7 Å should be noteworthy.
where ESb/InSe, EInSe and ESb are the total energies of the relaxed
Sb/InSe heterostructure, the InSe monolayer, and the Sb mono-
layer, respectively, and A is the interface area. Accordingly, the
more negative Eb value corresponds to the better stability. For
various stacking configurations, the energy differences between
them are less than 0.15 meV Å2, indicating that the stacking
effect has little essential influence on the interaction between
InSe and Sb. Furthermore, The H3 conformation has the lowest
binding energy of only 23.86 meV Å2, which is close to the
typical vdW force of DFT calculation (around 20 meV Å2).34
Other typical vdW crystals have the same order of magnitude:
for instance, 28.52 meV Å2 for the MoS2/AlN heterostructure
and 18.9 meV Å2 for the InSe/MoS2 heterostructure.35,36 There-
fore we only concentrate on the stacking type H3 due to its best
stability among these four stacking patterns. However, the
electronic properties of type H4 are also discussed in the ESI†
(Fig. S1) because it has a slightly higher binding energy than H3.
One effective approach to tune the electronic characteristics
of the heterostructure is applying vertical strain by changing
the interlayer distance. Most recently, Li et al.37 studied the
effect of interlayer coupling for band gaps and band alignment
types of the InSe/MoSe2 (WSe2) heterostructures, which are
beneficial for use in photoelectric sensors. Here, the binding
energy and band gap of the H3 pattern as a function of the
interlayer distances are calculated; the relationship curves are
given in Fig. 2. One can see that the most stable interlayer
distance is about 2.88 Å, which is also in good accordance with
the result of the geometrical optimization. Such a vertical
distance is larger than the sum of the covalent radii of the Sb
and In/Se atoms, with no chemical bonds at the Sb/InSe interface
region. In addition, the band gap can be modulated effectively by
the vertical strain. With the interlayer distance changing from
2.8 Å to 4.5 Å, the band structures always maintain direct gaps,
and the band gaps decrease linearly and monotonically. This
modulation is an interesting feature for optoelectronic devices
with high luminous efficiency. However, when the distances vary
from 2.0 Å to 2.7 Å, the band gaps increase slowly and turn into
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Fig. 2 The calculated binding energies and band gaps of the hetero-
structure vary as a function of the interlayer distances. The blue and red
lines represent the binding energy and band gap, respectively.
indirect, which can be attributed to the strong interlayer inter-
action and orbital overlapping.38 Thus the electric properties of
Similar phenomena have been reported in the InSe/InTe
heterostructure.39 To further gain other properties of the Sb/InSe
heterostructure, the pattern at an equilibrium interlayer distance
of 2.88 Å is discussed in succeeding work.
3.2 Electronic properties of the heterostructure
For comparison, the energy band structures of isolated InSe
and Sb are plotted in Fig. 3(a) and (b), respectively. Monolayer
InSe has an indirect band gap of 1.465 eV, the VBM is located
at the region between the high symmetry points G and K in
the Brillouin zone, whereas the CBM is located at the high
symmetry point G. Meanwhile, monolayer Sb also possesses an
indirect band gap of 1.227 eV, with the CBM located between
the M and G points, and the VBM lying at G. These results are in
line with the reported values for the PBE method.24,40,41 After
constructing an Sb/InSe heterostructure, the band structures of
both Sb and InSe layers are quite well preserved upon binding,
as depicted in Fig. 3(c). It is worthwhile that both the CBM
consisting of InSe and the VBM comprising Sb form a direct
band gap of 0.650 eV at the G point. The band gap of the hetero-
structure is much smaller than those of any of the individual
layers, which means that electron excitation of the heterostructure
from the VBM to the CBM is easier than those of single layers
when applying visible light irradiation. Besides, the CBM and VBM
of the InSe layer are lower than those of the Sb layer in the energy
aspect. As mentioned above, an intrinsic type-II alignment of the
vdW heterostructure is formed at the Sb/InSe interface which
can facilitate the effective spatial separation of photogenerated
electron–hole pairs, offering the opportunities of regarding
them as electron–hole separators. Moreover, the projected
DOS of the Sb/InSe heterostructure reveals that the VBM is
mainly dominated by the states of the Sb layer, while the CBM is
dominated by the states of the InSe layer. Meanwhile, according
to the orbital diagram (see Fig. S2, ESI†), it can be seen that the
LUMO is localized around the Sb atoms whereas the HOMO is
mainly around the Se atoms on the surface of the InSe layer,
consistent with the DOS analysis.
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Fig. 3 (a) Band structure of monolayer InSe. (b) Band structure of the isolated monolayer Sb. (c) The projected band structure of the Sb/InSe
heterostructure and the total density of states of Sb, InSe and Sb/InSe. (d) Band alignment of the Sb/InSe heterostructure at the PBE level. The Fermi level
is represented by a black dashed line. The energy of the vacuum level is set to zero.
It is a well-known fact that the SOC effect is important for
the electronic band structure on heavy elements, so, the band
structure calculations of the Sb monolayer, InSe monolayer,
and Sb/InSe heterostructure have been checked in the presence
of SOC, as shown in Fig. S3 of the ESI.† The results indicate that
the effect of SOC on the electronic band structure is quite weak
and can be neglected. Besides, for comparison, the HSE06
hybrid functional was also employed, giving calculated band
gaps of 2.14 eV for Sb, 2.29 eV for InSe, and 1.34 eV for the
Sb/InSe heterostructure, which are consistent with the results
of previous studies.8,38 The relative band structures and band
alignment are depicted in Fig. S4 (ESI†). It is worth mentioning
that the HSE06 functional greatly enhances the band gap and
hardly changes the shape of the electronic bands. In fact, the
standard PBE functional enables obtaining the general tendency
of band structures, so, considering the computational cost, we
mainly used the PBE method to explore the electronic properties
of the Sb/InSe heterostructure under a series of electric fields.
The work function, a critical parameter of an intrinsic reference
for band alignment, is expressed using the equation:
W = EVAC  EF
where EVAC is the energy level of a stationary electron in the
vacuum, and EF is the Fermi level of the material. The work
functions of the Sb and InSe monolayers are calculated to be
4.69 eV and 5.68 eV, respectively, which are basically consistent
with the reported values.42,43 The energy levels of EVAC and EF
have been shown in the calculated electrostatic potentials in
Fig. S5 (ESI†). Such a difference in work functions between Sb
and InSe at the interface thus boosts the spontaneous flow of
electrons from Sb towards InSe, as seen in Fig. 3(d). With the
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interesting transferred electrons, the Fermi level of InSe (Sb) lifts
upwards (downwards) and reaches the same level. Consequently,
the obtained work function of the heterostructure is 4.74 eV which
is slightly lower than that of Sb and higher than that of InSe. As a
result, the InSe component can gather negative charges whereas
the Sb component accumulates positive charges, which means the
formation of an internal electric field (Eint) with its direction
pointing from the Sb layer to the InSe layer, further resulting in
the drift behaviors of electrons and holes to achieve balance with
the diffusion force.
When the Sb/InSe heterostructure is irradiated with light of
a certain wavelength, some electrons can be photoexcited from
the VB to CB for both Sb and InSe layers to form electron–hole
pairs. Referring to Fig. 3(d), right, due to the band offsets, the
photogenerated electrons in the Sb layer can be transferred to
the CB of the InSe layer spontaneously. In contrast, the photo-
generated holes in InSe can flow to the VB of the Sb layer.
Eventually, the photogenerated electron–hole pairs can be
effectively separated: electrons and holes reside preferably in
the InSe and Sb layers, respectively, enabling the high efficiency
of the photovoltaic effect and photodetection performance. It
(2)
has been reported that MoS2 and PbI2 also form a type-II
heterostructure, which plays a momentous role in optoelectronic
applications.44
In order to investigate the band edge charge transport
properties of the heterostructure, the effective electron (hole)
masses of CB (VB) charge carriers for values are calculated (see
the ESI†), which can estimate the ability of carrier mobility
indirectly. Before exploring the effective mass in heterostructures,
the effective masses of InSe and Sb monolayers were firstly
calculated to be mInSe
e = 0.12m0, mInSe
h = 1.1m0 and mSb e = 0.21m0,
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mSb
h = 0.18m0 (m0 is the free-electron mass), which nearly
coincide with other results.21,45,46 It is noteworthy that both
the electron and hole mobility can be enhanced effectively in the
Sb/InSe heterostructure with me = 0.11m0 and mh = 0.16m0,
respectively. The most significant change is the pronounced
decrease in the electron (hole) effective mass of the heterostructure
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compared with that of monolayer Sb (InSe). Correspondingly, the

electron (hole) mobility of the heterostructure is much greater than
that of monolayer Sb (InSe), which indicates that there is no close
relationship between the two mobilities. This is because the
electron (hole) mobility is determined mainly by the contribution
from the InSe (Sb) layer since the photogenerated electrons
(holes) almost reside in this layer, which also explains why the
electron (hole) mobility of Sb (InSe) is irrelevant to that of the Fig. 5 The evolution of the band gap as a function of the Eext in the Sb/InSe
heterostructure of type H3. The inset shows the direction of positive Eext.
heterostructure.

3.3 Electronic structure modified by the external electric field

It is crucial to modify the electronic properties of 2D materials
for application in FETs, so that an external electric field (Eext)
perpendicular to the Sb/InSe heterostructure is employed. The
direction of Eext from the InSe to the Sb layer is taken as the
positive direction and the Eext ranging from 0.6 to 0.6 V Å1 is
applied. Fig. 4 illustrates how the electronic properties of the
Sb/InSe heterostructure are influenced without and with a
negative or positive Eext. Surprisingly, the heterostructure maintains
the type-II band alignment of direct band gaps at Eext from 0.52 to
0.48 V Å1. Evolution of the band gap as a function of applied Eext is
presented in Fig. 5. It is found that the band gap of the Sb/InSe
heterostructure is sensitive to the Eext strength, eventually achieving
an intriguing semiconductor–metal transition at critical fields. The
band gap varies linearly with Eext indicating a giant Stark effect.
When the system is subjected to a negative Eext, the band
gap firstly increases up to 0.4 V Å1, reaching up to the largest
value of 0.87 eV, and the corresponding band structure and
band alignment are displayed in Fig. 4(a) and (d), respectively.
The smooth enhancement of the band gap in the heterostructure
is attributed to the upward quasi-Fermi level (EF-InSe) for the InSe
layer and the downward quasi-Fermi level (EF-Sb) for the Sb layer.
The divergence between EF-Sb and EF-InSe promotes the transfer of
electrons from the InSe layer to the Sb layer. Then the band gap
reduces sharply with the Eext becoming stronger along the negative
direction and finally turns to be zero at about 0.53 V Å1.
In contrast, application of a positive Eext makes the EF-InSe decrease
and the EF-Sb increase by shifting respective energy bands near
the Fermi level, leading to a descending trend of the band gap
in the heterostructure. In particular, the bandgap diminishes
dramatically from 0.52 eV and finally is closed in the range of
0.4 to 0.49 V Å1, suggesting the transition from a semi-
conductor to metal. However, the charge drift induced in the
case of a positive Eext can facilitate the transfer of electrons
from the Sb layer to InSe layer, and the hole transfer from the
InSe layer to Sb layer, as seen in Fig. 4(f). Therefore, different
responses with a variable Eext revealed that the Sb/InSe hetero-
structure can be developed into a promising candidate for high-
performance sensors, FETs and MEMS devices.
To shed more light on the nature of the charge transfer
between the Sb and InSe layers, the averaged charge density

Fig. 4 (a–c) Projected band structures and (d–f) band alignments of the Sb/InSe heterostructure under an applied external field of 0.4, 0 and 0.4 V Å1,
respectively. EF-InSe (EF-Sb) is the quasi-Fermi level of InSe(Sb) in the Sb/InSe heterostructure.

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Fig. 6 (a) Averaged difference charge density of the Sb/InSe heterostructure along the vertical direction with various Eext. The inset represents the 3D
isosurface of the charge density difference for the pristine heterostructure at equilibrium distance. (b and c) The 3D charge density difference for the
heterostructure at 0.4 V Å1 and 0.4 V Å1, respectively. The blue and green regions represent electron accumulation and depletion, respectively, and
all isosurfaces of this text are set to 0.0035 e Å3. (A colour version of this figure can be viewed online.)
difference of the Sb/InSe heterostructure along the z direction
has been calculated using the following formula:
ð ð
Dr ¼ rT ðx; y; zÞdxdy  rSb ðx; y; zÞdxdy
ð
 rInSe ðx; y; zÞdxdy (3)
where rT(x, y, z), rSb(x, y, z), and rInSe(x, y, z) are the charge
densities of the Sb/InSe heterostructure, Sb monolayer and InSe
nanosheet at the (x, y, z) point, respectively. Accordingly,
positive values indicate charge accumulation at the position,
and negative values represent the charge depletion. The averaged
difference charge density of the Sb/InSe heterostructure at different
Eext strengths is portrayed in Fig. 6(a), and the electron redis-
tribution upon the formation of the interface in the pristine
heterostructure is visually revealed in the inset. It is evident
that the Sb layer donates electrons to the InSe layer, which
leads to p-doping in Sb and n-doping in InSe, in accordance
with the charge transfer induced by the difference of work
functions. The Mulliken population analysis reveals that the
transferred electron is 0.21 e in the pristine heterostructure.
Obviously, compared with the case of Eext = 0, the number
of transferred electrons increases with the enhanced strength of
the applied Eext regardless of its direction, as evidenced typically
by the isosurfaces of charge density difference for Sb/InSe
heterostructure under Eext = 0.4 V Å1 and Eext = 0.4 V Å1,
shown in Fig. 6(b) and (c), respectively. It is interesting to point
out that negative Eext induces more prominent charge transfer
than the positive Eext. What makes a difference is that the
positive charges tend to transfer from the Sb layer to the InSe
layer and negative charges transfer from the InSe layer to the Sb
layer in the case of a reverse Eext and forward Eext leading to the
opposite direction of electron and hole transfers. What’s more,
when it is subjected to a stronger Eext, the heterostructure
becomes a metal as a result of dielectric breakdown and
charge tunneling, which can be found in arsenene/C3N and
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stanene/ZnO heterostructures as well.47,48 These results show
that the Eext can modulate the charge distribution and the carrier
concentration.
4. Conclusions
In summary, the structural and electronic properties of an
Sb/InSe vdW heterostructure are investigated by first-principles
calculations. We demonstrate the stability of the researched
system by calculating the binding energies and comparing them
with those of the typical vdW crystals. In the Sb/InSe vdW
heterostructure, the band structures of InSe and Sb layers are
not destroyed due to the small lattice mismatch and weak vdW
interactions. The typical type-II band alignment indicates that the
heterostructure can facilitate the effective separation of photo-
generated electron and hole pairs. It is found that the carrier
mobility, especially the hole mobility, is enhanced in the hetero-
structure. By applying Eext to the Sb/InSe heterostructure, the
band gap can be tuned effectively while the band alignment
remains unchanged. Overall, the effective charge separation and
relatively high carrier mobility make the Sb/InSe heterostructure
a promising material in the application of photodetectors and
electronics.
Conflicts of interest
There are no conflicts to declare.
Acknowledgements
This work was supported by the National Natural Science
Foundation of China (51501017, 61604016 and 51802025), the China
Postdoctoral Science Foundation Funded Project (2016M590913 and
2017T100719), the International Science and Technology Coopera-
tion Project of Shaanxi (2017KW-031), the Shaanxi Postdoctoral
Science Foundation Funded Project (2016BSHEDZZ204), and the
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Fundamental Research Funds for the Central Universities
(300102318103 and 300102318303).
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